CN114770228A - Polishing treatment method for side edge of LCD (liquid crystal display) target - Google Patents
Polishing treatment method for side edge of LCD (liquid crystal display) target Download PDFInfo
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- CN114770228A CN114770228A CN202210398682.0A CN202210398682A CN114770228A CN 114770228 A CN114770228 A CN 114770228A CN 202210398682 A CN202210398682 A CN 202210398682A CN 114770228 A CN114770228 A CN 114770228A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a polishing treatment method for an LCD target side edge, which comprises the following steps: polishing the side edge of the LCD target by using flocked abrasive paper to form a polished surface; the working surface of flocking emery paper piece scribbles IPA liquid. According to the polishing treatment method for the side edge of the LCD target, provided by the invention, the IPA liquid is coated on the flocked abrasive paper sheet, the periphery of the LCD target is polished, foreign matters and non-target integrated substances on the side edge of the LCD target can be removed, the roughness after polishing is 0.01-0.6 mu m, the polishing treatment for the side edge of the LCD target can be completed within 10-100min, the turnover rate of the target is improved, the manual operation time is reduced, the defective products are reduced, the roughness after polishing is stable, and the one-time passing rate is improved to 96%.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, relates to a polishing method, and particularly relates to a polishing treatment method for an LCD target side edge.
Background
The sputtering target is one of important raw materials in the preparation process of semiconductor integrated circuits, and is mainly used for preparing physical vapor deposition films of contacts, through holes, interconnecting wires, barrier layers, packaging and the like in the integrated circuits. In the magnetron sputtering process, target atoms are deposited on the surface of a substrate by bombarding the surface of the target with accelerated ions, so that a deposited film is formed.
The quality of the target material used in the magnetron sputtering process is one of the key factors influencing the quality of the magnetron sputtering coating. The quality requirements for the sputtering target are higher than those of the traditional material industry. The general quality requirements of the sputtering target mainly include the requirements on the aspects of size, flatness, purity, component content, density, grain size, defect control and the like; in addition, the sputtering target has higher quality requirements or special quality requirements in terms of surface roughness, resistance value, uniformity of crystal grain size, uniformity of composition and structure, content and size of foreign matter (oxide), magnetic permeability, ultra-high density, ultra-fine crystal grain, and the like. Therefore, further polishing is required after turning to meet the use requirements.
At present, impurities and foreign matters on the main surface of the LCD target are mainly removed by polishing through a polishing machine, however, the removal of the foreign matters, oxides and non-target integrated substances on the side surface of the LCD target is generally realized through a manual abrasive paper or a pneumatic polishing machine in the conventional polishing method, the rust generated by abrasive paper polishing is difficult to remove, the efficiency is low, the polishing is directly performed through the abrasive paper or the pneumatic polishing machine, the online processing time of each product is about 3 hours, the roughness is unstable, the volatility is high, the quality is unstable, and the current total production quantity and quality requirements are difficult to meet.
CN 113021125a provides a method for treating a sputtering surface of a titanium target, which comprises sequentially performing sand paper treatment, scouring pad treatment and wool wheel treatment; the sanding treatment comprises 320# sanding treatment and 600# sanding treatment which are sequentially carried out; the scouring pad treatment comprises 1200# scouring pad treatment and 2000# scouring pad treatment which are sequentially carried out; the wool wheel treatment comprises the steps of sequentially performing wool wheel and diamond grinding paste W10 treatment, wool wheel and diamond grinding paste W3.5 treatment and wool wheel and diamond grinding paste W1.5 treatment; the sand paper treatment time is 8-10 min; the time for treating the scouring pad is 2-4 min; the wool wheel treatment time is 8-11 min.
CN 112828541A discloses a processing method of a tantalum target material and a sputtering surface thereof, which comprises turning and polishing in sequence; the turning is to feed a cutter blade from the edge to the center along the diameter direction of the tantalum target material; the turning comprises rough turning and finish turning which are carried out in sequence, and the tool depth is kept constant in the process of the rough turning and the finish turning; the finish turning comprises 8-12 cutter turning, and the allowance of the finish turning is 0.3-0.6 mm; and the polishing step is to polish the turning surface of the tantalum target material by using sand paper and scouring pad.
CN 112809455a discloses a polishing method for tungsten silicon target and its sputtering surface, which includes a first water grinding polishing, a second water grinding polishing and a third water grinding polishing which are performed back and forth; the number of round trips is 15-25; the running speeds of the target materials of the first water mill polishing, the second water mill polishing and the third water mill polishing are respectively and independently 0.1-0.3m/s and are respectively and independently carried out by adopting water mill abrasive belts; the rotating speed of the water grinding abrasive belt is 10-30r/min, and the specification comprises a No. 600 white corundum abrasive belt or a No. 800 white corundum abrasive belt; the first water mill polishing, the second water mill polishing and the third water mill polishing are respectively and independently accompanied with cooling water to flush the sputtering surface of the target; the flushing rate of the cooling water is 600-800mL/min, and the temperature is 5-25 ℃.
Although the roughness of the sputtering surface can meet the use requirement by the polishing method, the side edge of the target material is not polished, and the polishing process is only suitable for the target material made of a specific material.
CN 113400104a discloses a polishing method for a side edge of a copper target, which comprises the following steps: carrying out semi-automatic polishing treatment on the side edge of the copper target by adopting handheld polishing equipment; the semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence; the feeding speed of each polishing procedure is decreased gradually. Although the polishing method discloses the polishing treatment of the side edge, the treatment of the side edge residual glue in the sputtering process of the target material is not solved, and the polishing process is only suitable for the copper target material.
Therefore, how to provide a method for polishing the side edge of the LCD target, which can thoroughly and simply remove the residual glue formed by sputtering the target, thereby avoiding the adverse effect of the target quality and becoming a problem to be solved by technical personnel in the field at present.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a polishing treatment method for the side edge of the LCD target, which can remove foreign matters and non-target integrated substances on the side edge of the LCD target by polishing the side edge of the LCD target, thereby improving the turnover rate of the target, reducing the manual operation time, reducing the defective products, and improving the one-time passing rate due to stable roughness after polishing.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a polishing treatment method for an LCD target side edge, which comprises the following steps:
polishing the side edge of the LCD target by using flocked abrasive paper to form a polished surface;
the working surface of the flocking sandpaper sheet is coated with IPA liquid.
The side edge of the LCD target further comprises a side edge chamfer.
According to the invention, the IPA liquid is coated on the flocked abrasive paper sheet, and the periphery of the LCD target is polished, so that foreign matters on the side edge of the LCD target and non-target integrated substances can be removed, the turnover rate of the target is improved, the manual operation time is reduced, defective products are reduced, the roughness is stable after polishing, and the one-time passing rate is improved to 96%.
Preferably, the polishing process further comprises a welding process of the LCD target and the back plate.
Preferably, the backplate comprises a stainless steel backplate.
Preferably, the temperature of the soldering process is 275 ℃ and 285 ℃, and may be 275 ℃, 276 ℃, 277 ℃, 278 ℃, 279 ℃, 280 ℃, 281 ℃, 282 ℃, 283 ℃, 284 ℃ or 285 ℃, but is not limited to the recited values, and other values not recited in the numerical range are also applicable.
Preferably, the welding time is 25-35min, for example 25min, 26min, 27min, 28min, 29min, 30min, 31min, 32min, 33min, 34min or 35min, but is not limited to the values listed, and other values not listed in the range of values are equally applicable.
Preferably, the amount of the IPA solution is 50-70mL, for example, 50mL, 52mL, 54mL, 56mL, 58mL, 60mL62 mL, 64mL, 66mL, 68mL, or 70mL, but not limited to the values listed, and other values not listed in the range of values are also applicable.
Preferably, the area of the flocked abrasive paper sheet is 10-20cm2For example, it may be 10cm2、12cm2、14cm2、16cm2、18cm2Or 20cm2But are not limited to the recited values, and other values within the numerical range not recited are equally applicable.
Preferably, the IPA liquid is applied to the working surface of the flocked abrasive paper sheet in batches.
Preferably, the IPA liquid is coated on the working surface of the flocked abrasive paper sheet for 2-5 times.
The invention coats IPA liquid on the flocked abrasive paper in batches for use, so that the polishing effect is better.
Preferably, the wear-resistant material of the working surface of the flocked abrasive paper sheet comprises brown corundum.
Preferably, the specification of the flocking sandpaper sheet is 120-.
Preferably, the pressure between the flocked sandpaper sheet and the side edge of the LCD target is 10-100N, for example, 10N, 20N, 30N, 40N, 50N, 60N, 70N, 80N, 90N or 100N, but not limited to the values listed, and other values not listed in the range of values are also applicable.
Preferably, the polishing time is 10-100min, such as 10min, 20min, 30min, 40min, 50min, 60min, 70min, 80min, 90min or 100min, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the temperature of the polishing treatment is 20 to 35 ℃, for example, 20 ℃, 22 ℃, 24 ℃, 26 ℃, 28 ℃, 30 ℃, 32 ℃, 34 ℃ or 35 ℃, but not limited to the recited values, and other values not recited in the numerical range are also applicable.
Preferably, the material of the LCD target includes any one of copper, aluminum, molybdenum, titanium, tungsten silicon, nickel silicon or tantalum.
Preferably, the polishing process further comprises sequentially cleaning and drying the side edge of the LCD target.
As a preferred technical scheme of the invention, the method for polishing the side edge of the LCD target comprises the following steps:
(1) welding the LCD target material and the stainless steel back plate; the temperature of the welding treatment is 275-285 ℃, and the time is 25-35 min;
(2) coating IPA liquid at 20-35 deg.C in batches with specification of 120-2Polishing the side edges of the LCD target for 10-100min respectively under the pressure of 10-100N on the working surface of the flocked abrasive paper sheet; the dosage of the IPA liquid is 50-70 mL;
(3) sequentially cleaning and drying the side edge of the LCD target material;
the LCD target material is made of any one of copper, aluminum, molybdenum, titanium, tungsten silicon, nickel silicon or tantalum.
The numerical ranges set forth herein include not only the recited values but also any values between the recited numerical ranges not enumerated herein, and are not intended to be exhaustive or otherwise clear from the intended disclosure of the invention in view of brevity and clarity.
Compared with the prior art, the invention has the beneficial effects that:
according to the polishing treatment method for the side edge of the LCD target, provided by the invention, the IPA liquid is coated on the flocked abrasive paper sheet, the periphery of the LCD target is polished, foreign matters and non-target integrated substances on the side edge of the LCD target can be removed, the roughness after polishing is 0.01-0.6 mu m, the polishing treatment for the side edge of the LCD target can be completed within 10-100min, the turnover rate of the target is improved, the manual operation time is reduced, the defective products are reduced, the roughness after polishing is stable, and the one-time passing rate is improved to 96%.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitation of the present invention.
Example 1
The embodiment provides a method for polishing the side edge of an LCD target, which comprises the following steps:
(1) welding the LCD target material and the stainless steel back plate; the temperature of the welding treatment is 280 ℃ and the time is 30 min;
(2) at 30 deg.C, IPA liquid is applied to 1200# with 15cm area2The side edges of the LCD target are respectively polished for 80min under the pressure of 50N on the working surface of the flocking abrasive paper sheet; the dosage of the IPA liquid is 60 mL; the wear-resistant material of the working surface of the flocking abrasive paper sheet is brown corundum;
(3) sequentially cleaning and drying the side edge of the LCD target material;
the LCD target is made of copper.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 80min, the roughness after polishing is 0.2-0.4 μm, and the product yield is 98%.
Example 2
The embodiment provides a method for polishing the side edge of an LCD target, which comprises the following steps:
(1) welding the LCD target material and the stainless steel back plate; the temperature of the welding treatment is 275 ℃ and the time is 35 min;
(2) at 20 deg.C, IPA solution is applied to specification of 500# and area of 10cm in 5 times2The side edges of the LCD target are respectively polished for 50min under the pressure of 60N on the working surface of the flocking abrasive paper sheet; the dosage of the IPA liquid is 50 mL; the wear-resistant material of the working surface of the flocking abrasive paper sheet comprises brown corundum;
(3) sequentially cleaning and drying the side edge of the LCD target material;
the LCD target is made of aluminum.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 50min, the roughness after polishing is 0.05-0.4 μm, and the product yield is 96%.
Example 3
The embodiment provides a method for polishing the side edge of an LCD target, which comprises the following steps:
(1) welding the LCD target material and the stainless steel back plate; the temperature of the welding treatment is 285 ℃, and the time is 25 min;
(2) at 35 deg.C, IPA liquid is applied to 1500# specification and 20cm area for 4 times2The side edges of the LCD target are respectively polished for 100min under the pressure of 100N on the working surface of the flocking abrasive paper sheet; the dosage of the IPA liquid is 70 mL; the wear-resistant material of the working surface of the flocking abrasive paper sheet comprises brown corundum;
(3) sequentially cleaning and drying the side edge of the LCD target material;
the LCD target is made of aluminum.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 100min, the roughness after polishing is 0.1-0.5 μm, and the product yield is 96.2%.
Example 4
The embodiment provides a method for polishing the side edge of an LCD target, which comprises the following steps:
(1) welding the LCD target material and the stainless steel back plate; the temperature of the welding treatment is 280 ℃ and the time is 30 min;
(2) applying IPA solution at 20-35 deg.C for 3 times to specification of 120# and area of 16cm2Polishing the side edges of the LCD target for 70min respectively under the pressure of 60N on the working surface of the flocked abrasive paper sheet; the dosage of the IPA liquid is 65 mL; the wear-resistant material of the working surface of the flocking abrasive paper sheet comprises brown corundum;
(3) sequentially cleaning and drying the side edge of the LCD target material;
the LCD target is made of aluminum.
By adopting the polishing treatment method provided by the test, the polishing time is 70min, the roughness after polishing is 0.15-0.4 μm, and the product yield is 96.2%.
Example 5
The present embodiment provides a method for polishing a side edge of an LCD target, which only differs from embodiment 1 in that: in this example, the number of times 3 described in step (2) was changed to 1, and the total amount of IPA solution was not changed.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 80min, the roughness after polishing is 0.2-0.4 μm, and the product yield is 92%.
From this, it can be seen that the polishing effect does not reach the effect of example 1 if the IPA liquid is used once.
Example 6
The present embodiment provides a method for polishing a side edge of an LCD target, which is different from that in embodiment 1 only in that: in this example, the total amount of the IPA solution in step (2) was changed to 20mL, and the polishing time was changed to 100 min.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 100min, the roughness after polishing is 0.2-0.4 μm, and the product yield is 92%.
It can be seen that the use of IPA liquid is too small, and the roughness and product yield after polishing do not achieve the effect of example 1 even if the polishing time is increased.
Example 7
The embodiment provides a method for polishing the side edge of an LCD target, which is different from the method in embodiment 1 only in that: in the embodiment, the specification of the flocked abrasive paper sheet in the step (2) is changed to 2000#, and the polishing time is changed to 120 min.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 120min, the roughness after polishing is 0.2-0.6 μm, and the product yield is 89%.
From this, it can be seen that if the specification of the flocked abrasive paper sheet is changed to 2000#, the polishing effect does not reach the effect of embodiment 1 even if the polishing time is increased.
Example 8
The present embodiment provides a method for polishing a side edge of an LCD target, which is different from that in embodiment 1 only in that: in the embodiment, the area of the flocked abrasive paper sheet in the step (2) is changed into 5cm2The polishing time was changed to 150 min.
By adopting the polishing treatment method provided by the embodiment, the polishing time is 150min, the roughness after polishing is 0.2-0.4 μm, and the product yield is 98%.
It can be seen that the area of the flocked sandpaper sheet was changed to 5cm2In order to achieve the polishing effect of example 1, the polishing time needs to be increased, and more time is wasted.
Comparative example 1
The present comparative example provides a method for polishing a side edge of an LCD target, which differs from example 1 only in that: the comparative example omits the step (2) of coating IPA liquid on the flocked abrasive paper sheet in batches, and the polishing time is changed to 150 min.
The polishing time is 150min, the roughness after polishing is 0.2-0.6 μm, and the product yield is 89%
Therefore, only the flocked abrasive paper sheet is adopted, and the IPA liquid is not used, so that the polishing effect is poor.
Comparative example 2
The present comparative example provides a method for polishing a side edge of an LCD target, which differs from example 1 only in that: in the step (2) of the comparative example, the side is polished by using IPA liquid only, the polishing time is 150min, the roughness after polishing is 1.2-2.4 mu m, and the product yield is 89%.
Therefore, the polishing effect is poor because only IPA liquid is used for polishing and flocking abrasive paper sheets are not used.
Comparative example 3
The present comparative example provides a method for polishing a side edge of an LCD target, which differs from example 1 only in that: in the step (2) of the comparative example, the side edge is polished by using alcohol, the using amount of the alcohol is the same as that of the IPA solution in the example 1, the polishing time is 4h, the roughness after polishing is 2-4 μm, and the product yield is 82%.
It can be seen that the roughness after polishing is much reduced and the product yield is also poor by polishing the side edge with alcohol only.
Comparative example 4
The present comparative example provides a method for polishing a side edge of an LCD target, which differs from example 1 only in that: in the step (2) of the comparative example, the alcohol is matched with the flocked sandpaper sheet for use, the use amount is the same as that of the IPA liquid in the example 1, the side edge is polished for 4h, the roughness after polishing is 1-2, and the product yield is 83%.
Even if the polishing time is prolonged after replacing the IPA liquid with alcohol, the roughness and the product yield after polishing do not achieve the effect of example 1.
Comparative example 5
The present comparative example provides a method for polishing a side edge of an LCD target, which differs from example 1 only in that: comparative example (2) flocked abrasive paper was replaced with scouring pad, and the side was polished for 100min at a roughness of 1-2 after polishing and a product yield of 92%.
Even if the polishing time is prolonged after replacing the flocked abrasive paper sheet with the scouring pad, the roughness and the product yield after polishing do not achieve the effect of example 1.
In conclusion, the polishing treatment method for the side edge of the LCD target material, provided by the invention, has the advantages that foreign matters and non-target material integrated substances on the side edge of the LCD target material can be removed by coating the IPA liquid on the flocked abrasive paper and polishing the periphery of the LCD target material, the roughness after polishing is 0.01-0.6 mu m, the polishing treatment for the side edge of the LCD target material can be completed within 10-100min, the turnover rate of the target material is improved, the manual operation time is reduced, the defective products are reduced, the roughness after polishing is stable, and the one-time passing rate is improved to 96%.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A polishing treatment method for the side edge of an LCD target is characterized by comprising the following steps:
polishing the side edge of the LCD target by using flocked abrasive paper sheets to form a polished surface;
the working surface of flocking emery paper piece scribbles IPA liquid.
2. The method according to claim 1, further comprising welding the LCD target to the backing plate before the polishing;
preferably, the backplate comprises a stainless steel backplate.
3. The method as claimed in claim 2, wherein the temperature of the welding process is 275-285 ℃;
preferably, the welding time is 25-35 min.
4. The method according to any one of claims 1 to 3, wherein the amount of the IPA solution is 50-70 mL;
preferably, the area of the flocked abrasive paper sheet is 10-20cm2；
Preferably, the IPA liquid is coated on the working surface of the flocked sandpaper sheet in batches for use;
preferably, the IPA liquid is coated on the working surface of the flocked abrasive paper sheet for 2-5 times.
5. The method for polishing the sides of the LCD target according to any one of claims 1 to 4, wherein the wear-resistant material of the working surface of the flocked sandpaper sheet comprises brown corundum;
preferably, the specification of the flocking sand paper sheet is 120-.
6. The method for polishing the lateral side of the LCD target according to any one of claims 1 to 5, wherein the pressure between the flocked sandpaper sheet and the lateral side of the LCD target is 10-100N.
7. The method for polishing the side edge of the LCD target according to any one of claims 1-6, wherein the polishing time is 10-100 min;
preferably, the temperature of the polishing process is 20 to 35 ℃.
8. The method for polishing the lateral side of the LCD target according to any one of claims 1 to 7, wherein the material of the LCD target comprises any one of copper, aluminum, molybdenum, titanium, tungsten-silicon, nickel-silicon or tantalum.
9. The method according to any of claims 1 to 8, further comprising cleaning and drying the side of the LCD target in sequence after the polishing process.
10. The method for polishing the side of an LCD target according to any of claims 1 to 9, wherein the method for polishing the side of an LCD target comprises the steps of:
(1) welding the LCD target material and the stainless steel back plate; the temperature of the welding treatment is 275-285 ℃, and the time is 25-35 min;
(2) coating IPA liquid at 20-35 deg.C in batches with specification of 120-2Polishing the side edges of the LCD target for 10-100min respectively under the pressure of 10-100N on the working surface of the flocked abrasive paper sheet; the dosage of the IPA liquid is 50-70 mL;
(3) sequentially cleaning and drying the side edge of the LCD target material;
the LCD target material is made of any one of copper, aluminum, molybdenum, titanium, tungsten silicon, nickel silicon or tantalum.
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| CN202210398682.0A CN114770228A (en) | 2022-04-15 | 2022-04-15 | Polishing treatment method for side edge of LCD (liquid crystal display) target |
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| CN202210398682.0A CN114770228A (en) | 2022-04-15 | 2022-04-15 | Polishing treatment method for side edge of LCD (liquid crystal display) target |
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101705501A (en) * | 2009-12-04 | 2010-05-12 | 北京科技大学 | Method for metalizing back of ITO target |
| CN102059519A (en) * | 2010-12-03 | 2011-05-18 | 宁波江丰电子材料有限公司 | Method for preparing back plate and back plate structure |
| CN102500908A (en) * | 2011-10-20 | 2012-06-20 | 宁波江丰电子材料有限公司 | Welding method of tungsten target assembly |
| CN103785911A (en) * | 2012-10-30 | 2014-05-14 | 宁波江丰电子材料有限公司 | Welding process of target assembly |
| CN107662083A (en) * | 2016-07-27 | 2018-02-06 | 宁波江丰电子材料股份有限公司 | The processing method in target as sputter face |
| US20200013948A1 (en) * | 2017-10-16 | 2020-01-09 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via sputtering |
| CN111421393A (en) * | 2020-03-31 | 2020-07-17 | 合肥江丰电子材料有限公司 | L CD target side polishing process |
| CN111775030A (en) * | 2020-07-01 | 2020-10-16 | 合肥江丰电子材料有限公司 | LCD plane target material side polishing process |
| CN112877665A (en) * | 2021-03-16 | 2021-06-01 | 宁波江丰电子材料股份有限公司 | Target material assembly with sectional type pattern structure and knurling method thereof |
| CN112959010A (en) * | 2021-02-18 | 2021-06-15 | 宁波江丰电子材料股份有限公司 | Method for assembling target and copper back plate |
| CN113021166A (en) * | 2021-03-31 | 2021-06-25 | 合肥江丰电子材料有限公司 | Automatic polishing device for side edge of target and using method thereof |
| CN113770901A (en) * | 2021-09-17 | 2021-12-10 | 宁波江丰电子材料股份有限公司 | Polishing method for sputtering surface of target |
-
2022
- 2022-04-15 CN CN202210398682.0A patent/CN114770228A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101705501A (en) * | 2009-12-04 | 2010-05-12 | 北京科技大学 | Method for metalizing back of ITO target |
| CN102059519A (en) * | 2010-12-03 | 2011-05-18 | 宁波江丰电子材料有限公司 | Method for preparing back plate and back plate structure |
| CN102500908A (en) * | 2011-10-20 | 2012-06-20 | 宁波江丰电子材料有限公司 | Welding method of tungsten target assembly |
| CN103785911A (en) * | 2012-10-30 | 2014-05-14 | 宁波江丰电子材料有限公司 | Welding process of target assembly |
| CN107662083A (en) * | 2016-07-27 | 2018-02-06 | 宁波江丰电子材料股份有限公司 | The processing method in target as sputter face |
| US20200013948A1 (en) * | 2017-10-16 | 2020-01-09 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via sputtering |
| CN111421393A (en) * | 2020-03-31 | 2020-07-17 | 合肥江丰电子材料有限公司 | L CD target side polishing process |
| CN111775030A (en) * | 2020-07-01 | 2020-10-16 | 合肥江丰电子材料有限公司 | LCD plane target material side polishing process |
| CN112959010A (en) * | 2021-02-18 | 2021-06-15 | 宁波江丰电子材料股份有限公司 | Method for assembling target and copper back plate |
| CN112877665A (en) * | 2021-03-16 | 2021-06-01 | 宁波江丰电子材料股份有限公司 | Target material assembly with sectional type pattern structure and knurling method thereof |
| CN113021166A (en) * | 2021-03-31 | 2021-06-25 | 合肥江丰电子材料有限公司 | Automatic polishing device for side edge of target and using method thereof |
| CN113770901A (en) * | 2021-09-17 | 2021-12-10 | 宁波江丰电子材料股份有限公司 | Polishing method for sputtering surface of target |
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