CN102446864A - 功率模块及其制造方法 - Google Patents

功率模块及其制造方法 Download PDF

Info

Publication number
CN102446864A
CN102446864A CN201110206287XA CN201110206287A CN102446864A CN 102446864 A CN102446864 A CN 102446864A CN 201110206287X A CN201110206287X A CN 201110206287XA CN 201110206287 A CN201110206287 A CN 201110206287A CN 102446864 A CN102446864 A CN 102446864A
Authority
CN
China
Prior art keywords
wiring member
encapsulant
wiring
power
dielectric substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201110206287XA
Other languages
English (en)
Inventor
筱原利彰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN102446864A publication Critical patent/CN102446864A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48491—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

本发明涉及功率模块及其制造方法，其目的在于提供一种能防止铝线接合部的可靠性的劣化，能实现Si、SiC器件的高温工作的功率模块。本发明的功率元件具备：绝缘衬底（5），被配置在盒体（8）内；功率元件（1），被接合在绝缘衬底（5）上；作为第一布线构件的布线构件（9），是第一侧面被接合于功率元件（1）的表面电极的、矩形筒状的金属；作为布线的铝线（3），在布线构件（9）的与第一侧面相向的第二侧面连接；以及密封材料（2），被填充在盒体（8）内，覆盖绝缘衬底（5）、功率元件（1）、布线构件（9）、铝线（3）。

Description

功率模块及其制造方法
技术领域
本发明涉及功率模块及其制造方法，特别涉及在高温度工作的功率模块及其制造方法。
背景技术
在现有的功率模块中，通常，绝缘衬底以氮化铝（以下AlN）、氧化铝（Al2O3）、氮化硅（Si3N4）等陶瓷形成，在其表面背面上形成有铜或铝的金属图案。配置在绝缘衬底上的功率元件通过焊锡被接合在该绝缘衬底的金属图案上，从功率元件的电极向端子部以铝线进行布线，整体以硅凝胶（silicone gel）等密封材料进行密封。这是在专利文献1中示出的情况。
专利文献
专利文献1：日本特开平6-5742号公报。
当功率模块工作时，在功率元件的电阻部分中流过电流，元件发热，该热经由绝缘衬底、焊锡、底板向外部的冷却器（未图示）传递，进行散热。
可是，在与功率元件接合的铝线的接合部中存在被传递功率元件的热而导致温度上升，接合的可靠性降低的问题。此外，功率元件的热膨胀系数（线膨胀系数）和铝线的热膨胀系数（线膨胀系数）之差导致热应力被反复施加，存在有可能在界面附近发生疲劳损坏直至断裂的问题。特别如果是SiC器件那样的能高温工作的器件的话，工作温度进一步变高，该接合部的可靠性显著降低。
发明内容
本发明正是为了解决上述那样的问题而完成的，其目的在于提供一种能防止铝线接合部的可靠性的劣化，实现Si、SiC器件的高温工作的功率模块及其制造方法。
本发明的功率模块具备：绝缘衬底，配置在盒体内；功率元件，接合在所述绝缘衬底上；第一布线构件，其为矩形筒状的金属，第一侧面被接合于所述功率元件的表面电极；布线，连接于所述第一布线构件的与所述第一侧面相向的第二侧面；以及密封材料，被填充在所述盒体内，覆盖所述绝缘衬底、所述功率元件、所述第一布线构件、所述布线。
此外，本发明的功率模块的制造方法具备：（a）以所述第一布线构件的至少所述第二侧面露出的方式，在所述盒体内填充所述第一密封材料，覆盖所述绝缘衬底、所述功率元件、所述第一布线构件的工序；（b）在填充所述第一密封材料并露出的所述第一布线构件的所述第二侧面连接所述布线的工序；以及（c）在所述第一密封材料上进一步填充所述第二密封材料，覆盖所述第一布线构件的至少所述第二侧面、所述布线的工序。
根据本发明的功率模块，通过具备：绝缘衬底，配置在盒体内；功率元件，接合在所述绝缘衬底上；第一布线构件，其为矩形筒状的金属，第一侧面被接合于所述功率元件的表面电极；布线，连接于所述第一布线构件的与所述第一侧面相向的第二侧面；以及密封材料，被填充在所述盒体内，覆盖所述绝缘衬底、所述功率元件、所述第一布线构件、所述布线，从而功率元件表面和布线的接合部之间的距离变大，能抑制热直接传递，能防止其可靠性的劣化。此外，能抑制功率元件的热膨胀系数和布线的热膨胀系数之差导致的热应力，能抑制接合的断裂可能性。
此外，根据本发明的功率模块的制造方法，具备：（a）以所述第一布线构件的至少所述第二侧面露出的方式，在所述盒体内填充所述第一密封材料，覆盖所述绝缘衬底、所述功率元件、所述第一布线构件的工序；（b）在填充所述第一密封材料并露出的所述第一布线构件的所述第二侧面，连接所述布线的工序；以及（c）在所述第一密封材料上进一步填充所述第二密封材料，覆盖所述第一布线构件的至少所述第二侧面、所述布线的工序，由此成为能耐受在布线的接合时施加的加重、超声波的振动的构造，得到更稳定的接合性，品质提高。
附图说明
图1是实施方式1的功率模块的剖面图。
图2是实施方式1的布线构件的剖面图。
图3是实施方式1的布线构件的剖面图。
图4是实施方式2的功率模块的剖面图。
图5是实施方式3的功率模块的剖面图。
图6是前提技术的功率模块的剖面图。
具体实施方式
首先，针对本发明背景技术的功率模块，在以下进行说明。
如图6所示，功率模块在盒体8内具备：底板7；绝缘衬底5，隔着焊锡6分别配置在底板7上；功率元件1，隔着焊锡6配置在绝缘衬底5上；端子4，经由铝线3连接于功率元件1的表面电极；以及密封材料2，在盒体8内填充并覆盖绝缘衬底5、功率元件1、铝线3。
当功率模块工作时，在功率元件1的电阻部分（resistor component）中流过电流，功率元件1发热，该热经由绝缘衬底5、焊锡6、底板7向外部的冷却器（未图示）传递，进行散热。
可是，在与功率元件1接合的铝线3的接合部中，存在被传递功率元件1的热而导致温度上升，接合的可靠性降低的问题。此外，功率元件1的热膨胀系数（线膨胀系数）和铝线3的热膨胀系数（线膨胀系数）之差导致热应力被反复施加，存在有可能在界面附近发生疲劳损坏直至断裂的问题。特别如果是SiC器件那样的能高温工作的器件的话，工作温度进一步变高，该接合部的可靠性显著降低。
在以下的实施方式中，针对解决上述那样的问题的功率模块进行说明。
<A. 实施方式1>
<A—1. 结构>
针对本发明的实施方式1的功率模块使用附图进行说明。如图1所示，本发明的功率模块在盒体8内具备：底板7；绝缘衬底5，隔着焊锡6分别配置在底板7上；功率元件1，隔着焊锡6配置在绝缘衬底5上；作为第一布线构件的布线构件9，经由接合材料10接合于功率元件1的表面电极；端子4，经由作为布线的铝线3与布线构件9连接；以及密封材料2，在盒体8内填充并覆盖绝缘衬底5、功率元件1、布线构件9、铝线3。作为功率元件1通过使用作为宽带隙（wideband gap）半导体的SiC等，从而能实现可进行更高温工作的器件。
布线构件9由导电性好的例如铜材料、铜合金材料构成，形状为矩形筒状。一个主面（第一侧面）通过例如焊锡或银、铜等的低温烧结材料的接合材料10接合在功率元件1的表面电极部。在相向的主面（第二侧面）接合有铝线3。作为布线构件9的材料，选择热膨胀系数（线膨胀系数）比功率元件1的热膨胀系数（线膨胀系数）大的材料。该布线构件9具有如下效果，即，不需要采用在筒内通过有冷却介质的冷却介质电极所需要的那样的绝缘构造，吸收在功率元件1产生的热。
铝线3是薄板的铝带、铜线、铜带布线也可。
在实施方式1中，通过提高密封材料2的导热系数，从而能提高从布线构件9的散热性，能进一步降低铝线3接合部的温度。作为提高密封材料2的导热系数的方法，能在密封材料2中混入二氧化硅、氧化铝、氮化硅、氮化铝、氮化硼等的粉末。
图2表示在实施方式1的功率元件1上搭载的布线构件9的构造。构成矩形的布线构件9的金属材料102以具有良好的导电性的铜或铜合金构成，接合于功率元件1的侧面（第一侧面）构成为合并（combine）与作为功率元件1的材料的SiC的线膨胀系数（6.6×10-6/K）接近的低膨胀材料103，从而能使通过功率元件1和布线构件9之间的热膨胀系数的差异产生的接合材料10中的热应力减轻，能延长接合材料10的疲劳寿命。
对这样的低膨胀材料103，优选线膨胀系数为4×10-6/K~10×10-6/K左右的材料，例如在厚度比为3的因瓦合金（invar）两侧接合有厚度比为1的铜的包覆材料（线膨胀系数：7×10-6/K）是适合的。在这样的包覆材料中，通过调整因瓦合金和铜的厚度比，能得到期望的热膨胀系数（线膨胀系数）。低膨胀材料103和布线构件9的接合可以是硬钎焊、焊接等。
图3与图2中示出的布线构件9类似，但布线构件9的与功率元件1接合的侧面（第一侧面）仅以低膨胀材料103构成，以从第一侧面的端部形成矩形筒状的方式接合铜等的具有与铝接近的热膨胀系数的金属材料104而形成。通过以上述方式构成，能进一步提高接合材料10的可靠性。
<A—2. 效果>
根据本发明的实施方式1，通过在功率模块中具备：绝缘衬底5，配置在盒体8内；功率元件1，被接合在绝缘衬底5上；作为第一布线构件的布线构件9，是矩形筒状金属，第一侧面被接合在功率元件1的表面电极；作为布线的铝线3，连接于布线构件9的与第一侧面相向的第二侧面；以及密封材料2，被填充在盒体8内，覆盖绝缘衬底5、功率元件1、布线构件9、铝线3，从而功率元件1表面和铝线3的接合部之间的距离变大，能抑制热直接传递，能防止其可靠性的劣化。此外，能抑制功率元件1的热膨胀系数和铝线3的热膨胀系数之差导致的热应力，能抑制接合的断裂可能性。
此外，根据本发明的实施方式1，在功率模块中，通过使作为第一布线构件的布线构件9的热膨胀系数大于功率元件1的热膨胀系数，从而能抑制功率元件1的热膨胀系数和铝线3的热膨胀系数之差导致的热应力，能抑制接合的断裂可能性。
此外，根据本发明的实施方式1，在功率模块中，通过作为第一布线构件的布线构件9，是作为对应于第一侧面的构件的低膨胀材料103是比作为对应于其它侧面的构件的金属材料102、金属材料104热膨胀系数低的构件，从而能使通过功率元件1和布线构件9之间的热膨胀系数的差异而产生的接合材料10中的应力减轻，延长接合材料10的疲劳寿命。
此外，根据本发明的实施方式1，在功率模块中，功率元件1是宽带隙半导体元件，由此能成为可进行更高温工作的器件。
<B. 实施方式2>
<B—1. 结构>
图4表示实施方式2的功率模块。如图所示，功率模块在实施方式1中示出的功率模块的结构之外，还具备作为第二布线构件的布线构件91，该布线构件91是第一侧面被接合在绝缘衬底5的表面图案上的、矩形筒状的金属，经由铝线3连接布线构件91和端子4。
在此，和实施方式1同样地，也能在盒体8内填充密封材料2，但在本实施方式2中，在以铝线3与布线构件9、布线构件91接合的侧面（第二侧面）至少露出的方式用环氧树脂等密封材料100（第一密封材料）填充并使其硬化后，在露出的布线构件9、布线构件91的表面接合铝线3。之后，用于确保绝缘性的密封材料101（第二密封材料）被填充在剩余的露出部分。再有，将密封材料100填充到什么高度，能通过后面叙述的强度设定来调节。
通过采用该构造，从而成为能耐受在铝线3的接合时施加的加重、超声波的振动的构造，得到更稳定的接合性，品质提高。此外，由于能以密封材料100固定布线构件9、布线构件91，所以能将布线构件9、布线构件91的高度维持得较高，能进一步降低铝线3的接合部的温度。
填充密封材料100、密封材料101的方法在绝缘衬底5上不具备布线构件91的构造（实施方式1的构造）的情况下也能应用。
<B—2. 效果>
根据本发明的实施方式2，在功率模块中，密封材料2具备：作为第一密封材料的密封材料100，以作为第一布线构件的布线构件9的至少第二侧面露出的方式被填充在盒体8内，覆盖绝缘衬底5、功率元件1、布线构件9；以及作为第二密封材料的密封材料101，进一步被填充在密封材料100上，覆盖布线构件9的至少第二侧面、作为布线的铝线3，由此成为能耐受在铝线3的接合时施加的加重、超声波的振动的构造，得到更稳定的接合性，品质提高。此外，由于能以密封材料100固定布线构件9、布线构件91，所以能将布线构件9、布线构件91的高度维持得较高，能进一步降低铝线3的接合部的温度。
此外，根据本发明的实施方式2，在功率模块中，还具备作为第二布线构件的布线构件91，该布线构件91是第一侧面被接合于绝缘衬底5的表面图案的、矩形筒状的金属，作为第一密封材料的密封材料100以至少作为第二布线构件的布线构件91的与第一侧面相向的第二侧面露出的方式被填充，覆盖布线构件91，作为第二密封材料的密封材料101以至少覆盖布线构件91的第二侧面的方式被填充，由此功率元件1和铝线3的接合部的距离变大，由此能提高散热效果，能提高接合部的可靠性。此外，成为能耐受在铝线3的接合时施加的加重、超声波的振动的构造，得到更稳定的接合性，品质提高。
此外，根据本发明的实施方式2，在功率模块中，密封材料2是环氧树脂，由此能提高密封材料的导热系数，能提高散热效果。
此外，根据本发明的实施方式2，在功率模块的制造方法中，具备：（a）以作为第一布线构件的布线构件9的至少第二侧面露出的方式，在盒体8内填充作为第一密封材料的密封材料100，覆盖绝缘衬底5、功率元件1、布线构件9的工序；（b）在填充密封材料100并露出的布线构件9的第二侧面，连接作为布线的铝线3的工序；以及（c）在密封材料100上进一步填充作为第二密封材料的密封材料101，覆盖布线构件9的至少第二侧面、铝线3的工序，由此成为能耐受在铝线3的接合时施加的加重、超声波的振动的构造，得到更稳定的接合性，品质提高。
<C. 实施方式3>
<C—1. 结构>
图5表示实施方式3的、以并联连接来使用多个功率元件的情况下的功率模块。如图所示，本实施方式3的功率模块在实施方式2中示出的功率模块的结构以外，还具备：布线构件90，与各功率元件1对应地具备的布线构件彼此在第二侧面侧相互被接合。
布线构件90是横跨多个功率元件1的整体构造。通过该结构，作为用于耐受在铝线3的接合时施加的加重、超声波的振动的强度比实施方式2的情况进一步增大，此外，由于形成连接部分，所以散热的表面积也增大，因此能期待进一步的散热效果。
<C—2. 效果>
根据本发明的实施方式3，在功率模块中，多个功率元件1被配置在绝缘衬底5上，作为第一布线构件的布线构件90对应于多个功率元件1而被设置，各第一侧面与多个功率元件1的各表面电极对应地被接合，各布线构件90的各第二侧面相互被接合，由此用于耐受在铝线3的接合时施加的加重、超声波的振动的强度进一步增大，此外，由于形成连接部分，所以散热的表面积也增大，因此能期待进一步的散热效果。
在本发明的实施方式中，针对各结构要素的材质、材料、实施的条件等都进行了记载，但这些为例示，并不仅限于记载的内容。
附图标记的说明
1 功率元件；2、100、101 密封材料；3 铝线；4 端子；5 绝缘衬底；6 焊锡；7 底板；8 盒体；9、90、91 布线构件；10 接合材料；102、104 金属材料；103 低膨胀材料。

Claims (9)

1.一种功率模块，其中，具备：
绝缘衬底，配置在盒体内；
功率元件，接合在所述绝缘衬底上；
第一布线构件，其为矩形筒状的金属，第一侧面被接合于所述功率元件的表面电极；
布线，连接于所述第一布线构件的与所述第一侧面相向的第二侧面；以及
密封材料，被填充在所述盒体内，覆盖所述绝缘衬底、所述功率元件、所述第一布线构件、所述布线。
2.根据权利要求1所述的功率模块，其中，
所述第一布线构件的热膨胀系数比所述功率元件的热膨胀系数大。
3.根据权利要求1或2所述的功率模块，其中，
所述第一布线构件是对应于所述第一侧面的构件的热膨胀系数比对应于其它侧面的构件的热膨胀系数低的构件。
4.根据权利要求1或2所述的功率模块，其中，
所述密封材料具备：
第一密封材料，以所述第一布线构件的至少所述第二侧面露出的方式，被填充在所述盒体内，覆盖所述绝缘衬底、所述功率元件、所述第一布线构件；以及
第二密封材料，进一步被填充在所述第一密封材料上，覆盖所述第一布线构件的至少所述第二侧面、所述布线。
5.根据权利要求4所述的功率模块，其中，还具备：
第二布线构件，其为矩形筒状的金属，第一侧面被接合于所述绝缘衬底的表面图案；
所述第一密封材料以至少所述第二布线构件的与所述第一侧面相向的第二侧面露出的方式被填充，覆盖所述第二布线构件，
所述第二密封材料至少覆盖所述第二布线构件的所述第二侧面而被填充。
6.根据权利要求1或2所述的功率模块，其中，
所述密封材料为环氧树脂。
7.根据权利要求1或2所述的功率模块，其中，
在所述绝缘衬底上配置有多个所述功率元件，
所述第一布线构件以与多个所述功率元件对应的方式被设置，各所述第一侧面与多个所述功率元件的各表面电极对应地被接合，
所述各第一布线构件的各所述第二侧面被相互接合。
8.根据权利要求1或2所述的功率模块，其中，
所述功率元件是宽带隙半导体元件。
9.一种功率模块的制造方法，所述功率模块具备：
绝缘衬底，配置在盒体内；
功率元件，接合在所述绝缘衬底上；
第一布线构件，其为矩形筒状的金属，第一侧面被接合于所述功率元件的表面电极；
布线，连接于所述第一布线构件的与所述第一侧面相向的第二侧面；以及
密封材料，被填充在所述盒体内，覆盖所述绝缘衬底、所述功率元件、所述第一布线构件、所述布线，
所述密封材料具备：
第一密封材料，以所述第一布线构件的至少所述第二侧面露出的方式，被填充在所述盒体内，覆盖所述绝缘衬底、所述功率元件、所述第一布线构件；以及
第二密封材料，进一步被填充在所述第一密封材料上，覆盖所述第一布线构件的至少所述第二侧面、所述布线，
其中，所述功率模块的制造方法具备：
（a）以所述第一布线构件的至少所述第二侧面露出的方式，在所述盒体内填充所述第一密封材料，覆盖所述绝缘衬底、所述功率元件、所述第一布线构件的工序；
（b）在填充所述第一密封材料并露出的所述第一布线构件的所述第二侧面连接所述布线的工序；以及
（c）在所述第一密封材料上进一步填充所述第二密封材料，覆盖所述第一布线构件的至少所述第二侧面、所述布线的工序。
CN201110206287XA 2010-10-01 2011-07-22 功率模块及其制造方法 Pending CN102446864A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-223505 2010-10-01
JP2010223505A JP2012079914A (ja) 2010-10-01 2010-10-01 パワーモジュールおよびその製造方法

Publications (1)

Publication Number Publication Date
CN102446864A true CN102446864A (zh) 2012-05-09

Family

ID=45889097

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110206287XA Pending CN102446864A (zh) 2010-10-01 2011-07-22 功率模块及其制造方法

Country Status (5)

Country Link
US (1) US20120080800A1 (zh)
JP (1) JP2012079914A (zh)
KR (1) KR20120034560A (zh)
CN (1) CN102446864A (zh)
DE (1) DE102011083927A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104867897A (zh) * 2015-05-06 2015-08-26 嘉兴斯达微电子有限公司 一种二极管功率模块
CN105990277A (zh) * 2015-03-16 2016-10-05 三菱电机株式会社 电力用半导体装置
CN106026692A (zh) * 2015-03-24 2016-10-12 三菱电机株式会社 半导体模块、电力变换装置以及半导体模块的制造方法
CN112635410A (zh) * 2019-09-24 2021-04-09 株式会社东芝 功率模块
CN116053254A (zh) * 2023-01-31 2023-05-02 海信家电集团股份有限公司 功率模块和具有其的电子设备

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5656907B2 (ja) * 2012-04-11 2015-01-21 三菱電機株式会社 パワーモジュール
US9087833B2 (en) 2012-11-30 2015-07-21 Samsung Electronics Co., Ltd. Power semiconductor devices
CN109390308B (zh) 2014-11-26 2023-02-10 意法半导体股份有限公司 具有引线键合和烧结区域的半导体器件及其制造工艺
JP6540324B2 (ja) * 2015-07-23 2019-07-10 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
CN105655306A (zh) * 2016-03-10 2016-06-08 嘉兴斯达半导体股份有限公司 一种集成在散热基板上的双面焊接单面散热功率模块
US10833474B2 (en) * 2017-08-02 2020-11-10 Nlight, Inc. CTE-matched silicon-carbide submount with high thermal conductivity contacts
JP7005373B2 (ja) * 2018-02-09 2022-01-21 三菱電機株式会社 パワーモジュールおよび電力変換装置
JP7209615B2 (ja) * 2019-11-13 2023-01-20 三菱電機株式会社 半導体装置
JP7390995B2 (ja) 2020-08-28 2023-12-04 信越化学工業株式会社 パワーモジュールの製造方法
JP2022125612A (ja) * 2021-02-17 2022-08-29 株式会社東芝 パワーモジュール

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020050397A1 (en) * 2000-10-26 2002-05-02 Noriaki Sakamoto Semiconductor module and method of manufacturing the same
US20030141506A1 (en) * 2002-01-28 2003-07-31 Masahiko Sano Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
CN1838422A (zh) * 2005-03-25 2006-09-27 住友化学株式会社 固体摄像装置及其制造方法
CN101399260A (zh) * 2007-09-27 2009-04-01 三洋电机株式会社 电路模块
US7576431B2 (en) * 2003-12-25 2009-08-18 Oki Semiconductor Co., Ltd. Semiconductor chip package and multichip package

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065742A (ja) 1992-06-22 1994-01-14 Mitsubishi Electric Corp 半導体装置、その封止に用いられる樹脂および半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020050397A1 (en) * 2000-10-26 2002-05-02 Noriaki Sakamoto Semiconductor module and method of manufacturing the same
US20030141506A1 (en) * 2002-01-28 2003-07-31 Masahiko Sano Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
US7576431B2 (en) * 2003-12-25 2009-08-18 Oki Semiconductor Co., Ltd. Semiconductor chip package and multichip package
CN1838422A (zh) * 2005-03-25 2006-09-27 住友化学株式会社 固体摄像装置及其制造方法
CN101399260A (zh) * 2007-09-27 2009-04-01 三洋电机株式会社 电路模块

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105990277A (zh) * 2015-03-16 2016-10-05 三菱电机株式会社 电力用半导体装置
CN105990277B (zh) * 2015-03-16 2018-09-28 三菱电机株式会社 电力用半导体装置
CN106026692A (zh) * 2015-03-24 2016-10-12 三菱电机株式会社 半导体模块、电力变换装置以及半导体模块的制造方法
CN106026692B (zh) * 2015-03-24 2018-11-16 三菱电机株式会社 半导体模块、电力变换装置以及半导体模块的制造方法
CN104867897A (zh) * 2015-05-06 2015-08-26 嘉兴斯达微电子有限公司 一种二极管功率模块
CN112635410A (zh) * 2019-09-24 2021-04-09 株式会社东芝 功率模块
CN116053254A (zh) * 2023-01-31 2023-05-02 海信家电集团股份有限公司 功率模块和具有其的电子设备
CN116053254B (zh) * 2023-01-31 2024-04-19 海信家电集团股份有限公司 功率模块和具有其的电子设备

Also Published As

Publication number Publication date
JP2012079914A (ja) 2012-04-19
KR20120034560A (ko) 2012-04-12
DE102011083927A1 (de) 2012-07-05
US20120080800A1 (en) 2012-04-05

Similar Documents

Publication Publication Date Title
CN102446864A (zh) 功率模块及其制造方法
JP6234630B2 (ja) パワーモジュール
CN108231709B (zh) 具有双面冷却的功率模块
US9899345B2 (en) Electrode terminal, semiconductor device for electrical power, and method for manufacturing semiconductor device for electrical power
EP1768243B1 (en) Inverter device
EP3276661B1 (en) Semiconductor device
US20170309544A1 (en) Semiconductor device and method for manufacturing semiconductor device
JP2007251076A (ja) パワー半導体モジュール
US9433075B2 (en) Electric power semiconductor device
CN104620373A (zh) 半导体装置
JP2005094842A (ja) インバータ装置及びその製造方法
JP2015126168A (ja) パワーモジュール
JP2017034152A (ja) 電力用半導体装置
CN115547967A (zh) 半导体封装件用夹片结构体及包括其的半导体封装件
US20220051960A1 (en) Power Semiconductor Module Arrangement and Method for Producing the Same
KR102588854B1 (ko) 파워모듈 및 그 제조방법
JP2019079905A (ja) 半導体装置および半導体装置の製造方法
EP3584834A1 (en) Semiconductor device
JP2020174156A (ja) 半導体装置および半導体装置の製造方法
JP6895307B2 (ja) 半導体装置
JP2015023226A (ja) ワイドギャップ半導体装置
CN111834307A (zh) 半导体模块
JP5724415B2 (ja) 半導体モジュール
TW548807B (en) Hermetically sealing enclosure for housing photo-semiconductor devices and photo-semiconductor module incorporating the enclosure
TWI778499B (zh) 具有導角金屬間隔單元的電源模組

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120509