CN104867897A - 一种二极管功率模块 - Google Patents

一种二极管功率模块 Download PDF

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CN104867897A
CN104867897A CN201510225934.XA CN201510225934A CN104867897A CN 104867897 A CN104867897 A CN 104867897A CN 201510225934 A CN201510225934 A CN 201510225934A CN 104867897 A CN104867897 A CN 104867897A
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ceramic substrate
power module
diode
welded
anode
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季霖夏
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JIAXING STARPOWER MICROELECTRONICS CO Ltd
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H01L2224/411—Disposition
    • H01L2224/4111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/41113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging straps
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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Abstract

一种二极管功率模块，它主要包括：半导体芯片，金属化陶瓷衬底，铝带，散热基板和外壳，所述的二极管芯片通过焊料焊接到金属化陶瓷衬底的阳极上；使用超声波键合将金属化陶瓷衬底的阳极铜层通过铝带和二极管芯片的阳极相连；所述金属化陶瓷衬底的背面铜层通过焊料焊接到散热基板上；所述的金属化陶瓷衬底由第一铜表面、中间陶瓷层和第二铜表面通过金属化陶瓷工艺制成，所述的铝带为用连续铸轧工艺或其它合适工艺制成的软态铝带；散热基板通过密封胶与外壳粘合；所述的软态铝带使用超声波键合方法焊接在半导体芯片的表面；它具有结构简单，封装质量好，能保障封装与工艺和要求，大大提高了可靠性和过电流能力等特点。

Description

一种二极管功率模块
技术领域
本发明涉及的是一种二极管功率模块，属于半导体功率器件封装技术领域。
背景技术
传统功率器件封装工艺中，一般使用引线键合(Wire bonding)或铜带键合(Clip Bonding 或称为Copper Strap Attachment )技术, 但是为了进一步减小功率器件的封装尺寸以及获得更低的导通电阻, 有些公司开始尝试在功率器件封装工艺中使用铝带键合技术，特别是在小封装尺寸的功率器件中, 例如SO-8、PQFN 等。
功率模块是在功率电子电路上使用的半导体封装体，比如，封装了绝缘栅双极晶体管(IGBT)芯片，或金属氧化物半导体场效应晶体管(MOSFET)芯片的模块。一些模块也封装有半导体二极管(DIODE)芯片以提供过压保护。以上功率半导体芯片具有一系列电压和电流等级，以适应不同的场合或行业应用。
由于功率半导体芯片的热膨胀系数和键合线的热膨胀系数相差较大，功率模块在长期使用过程中最容易产生的失效是键合点与芯片表面脱离；同时半导体功率芯片电流密度的不断增加，传统的铝线已经不能满足电气连接的要求。
超声键合是实现集成电路封装中芯片互连的关键技术之一。现在集成电路(IC)封装中有三种方法可以实现芯片的电气互连：倒装芯片、载带自动焊及引线键合。
发明内容
本发明的目的在于克服现有技术存在的不足，而提供一种结构简单，封装质量好，能保障封装与工艺和要求，大大提高了可靠性和过电流能力的二极管功率模块。
本发明的目的是通过如下技术方案来完成的，一种二极管功率模块，它主要包括：半导体芯片，金属化陶瓷衬底，铝带，散热基板和外壳，所述的二极管芯片通过焊料焊接到金属化陶瓷衬底的阳极上；使用超声波键合将金属化陶瓷衬底的阳极铜层通过铝带和二极管芯片的阳极相连；所述金属化陶瓷衬底的背面铜层通过焊料焊接到散热基板上。
所述的金属化陶瓷衬底由第一铜表面、中间陶瓷层和第二铜表面通过金属化陶瓷工艺制成，所述的铝带为用连续铸轧工艺或其它合适工艺制成的软态铝带；散热基板通过密封胶与外壳粘合。
所述的软态铝带使用超声波键合方法焊接在半导体芯片的表面。
随着半导体封装尺寸的日益变小，普遍应用于大功率器件上的粗铝线键合技术不再是唯一的选择。铝带键合突破了封装尺寸的限制，实现了小功率器件封装中键合工艺的强度和性能优势。铝带键合提供了一个近乎完美的技术替代，且比现有技术更具吸引力。在键合质量、工艺能力以及设计要求等方面，键合铝带均优于传统键合铝线。
由于使用了超声波焊接技术及键合铝带，大大提高了可靠性和过电流能力；一个宽长比为10 :1 的铝条带可以代替12 根与它厚度相当线径的铝线或8 根铜线。
本发明为一种基于铝带超声波键合的二极管功率模块，具有结构简单，封装质量好，能保障封装与工艺和要求，大大提高了可靠性和过电流能力等特点。
附图说明
图1是本发明所述模块的俯视结构示意图。
图2是本发明所述模块的剖视结构示意图。
具体实施方式
下面将结合附图对本发明作详细的介绍：涂1、2所示，本发明所述的一种二极管功率模块，它主要包括：半导体芯片2，金属化陶瓷衬底，铝带1，散热基板5和外壳9，所述的二极管芯片2通过焊料4焊接到金属化陶瓷衬底的阳极3上；使用超声波键合将金属化陶瓷衬底的阳极铜层6通过铝带1和二极管芯片2的阳极相连；所述金属化陶瓷衬底的背面铜层10通过焊料）焊接到散热基板5上。
本发明所述的金属化陶瓷衬底由第一铜表面、中间陶瓷层和第二铜表面通过金属化陶瓷工艺制成，所述的铝带1为用连续铸轧工艺或其它合适工艺制成的软态铝带；散热基板5通过密封胶7与外壳9粘合。
所述的软态铝带使用超声波键合方法焊接在半导体芯片的表面。
实施例：本发明所述的二极管芯片2通过焊料4焊接到DBC的阳极3上，使用超声波键合将DBC的阳极铜层6通过铝带1和二极管芯片阳极相连。DBC的背面铜层10通过焊料8焊接到散热基板5上。塑料外壳9与散热基板5通过密封胶7粘合。所述的DBC为用直接键合铜工艺制成的覆铜陶瓷基板。

Claims (3)

1.一种二极管功率模块，它主要包括：半导体芯片，金属化陶瓷衬底，铝带，散热基板和外壳，其特征在于所述的二极管芯片（2）通过焊料（4）焊接到金属化陶瓷衬底的阳极（3）上；使用超声波键合将金属化陶瓷衬底的阳极铜层（6）通过铝带（1）和二极管芯片的阳极相连；所述金属化陶瓷衬底的背面铜层（10）通过焊料（8）焊接到散热基板（5）上。
2.根据权利要求1所述的二极管功率模块，其特征在于所述的金属化陶瓷衬底由第一铜表面、中间陶瓷层和第二铜表面通过金属化陶瓷工艺制成，所述的铝带为用连续铸轧工艺或其它合适工艺制成的软态铝带；散热基板（5）通过密封胶（7）与外壳（9）粘合。
3.根据权利要求2所述的二极管功率模块，其特征在于所述的软态铝带使用超声波键合方法焊接在半导体芯片的表面。
CN201510225934.XA 2015-05-06 2015-05-06 一种二极管功率模块 Pending CN104867897A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783773A (zh) * 2016-12-13 2017-05-31 中航（重庆）微电子有限公司 一种非绝缘双塔型二极管模块
CN108110459A (zh) * 2017-12-22 2018-06-01 江苏宏微科技股份有限公司 一种大功率ipm模块端子连接结构

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CN102446864A (zh) * 2010-10-01 2012-05-09 三菱电机株式会社 功率模块及其制造方法
CN102064158B (zh) * 2010-11-04 2012-08-15 嘉兴斯达微电子有限公司 一种紧凑型功率模块
CN103779282A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种便于安装的功率半导体模块
CN203882995U (zh) * 2013-03-13 2014-10-15 半导体元件工业有限责任公司 半导体组件
CN204792767U (zh) * 2015-05-06 2015-11-18 嘉兴斯达微电子有限公司 二极管功率模块

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
CN102446864A (zh) * 2010-10-01 2012-05-09 三菱电机株式会社 功率模块及其制造方法
CN102064158B (zh) * 2010-11-04 2012-08-15 嘉兴斯达微电子有限公司 一种紧凑型功率模块
CN203882995U (zh) * 2013-03-13 2014-10-15 半导体元件工业有限责任公司 半导体组件
CN103779282A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种便于安装的功率半导体模块
CN204792767U (zh) * 2015-05-06 2015-11-18 嘉兴斯达微电子有限公司 二极管功率模块

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783773A (zh) * 2016-12-13 2017-05-31 中航（重庆）微电子有限公司 一种非绝缘双塔型二极管模块
CN108110459A (zh) * 2017-12-22 2018-06-01 江苏宏微科技股份有限公司 一种大功率ipm模块端子连接结构
CN108110459B (zh) * 2017-12-22 2024-04-30 江苏宏微科技股份有限公司 一种大功率ipm模块端子连接结构

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Application publication date: 20150826