CN102403327B - 成像器件和成像装置 - Google Patents

成像器件和成像装置 Download PDF

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Publication number
CN102403327B
CN102403327B CN201110272171.6A CN201110272171A CN102403327B CN 102403327 B CN102403327 B CN 102403327B CN 201110272171 A CN201110272171 A CN 201110272171A CN 102403327 B CN102403327 B CN 102403327B
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China
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layer
conductor
conductor structure
solid
wavelength
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Expired - Fee Related
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CN201110272171.6A
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Chinese (zh)
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CN102403327A (zh
Inventor
横川创造
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Sony Semiconductor Solutions Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201110272171.6A 2010-09-15 2011-09-15 成像器件和成像装置 Expired - Fee Related CN102403327B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-206850 2010-09-15
JP2010206850A JP2012064703A (ja) 2010-09-15 2010-09-15 撮像素子および撮像装置

Publications (2)

Publication Number Publication Date
CN102403327A CN102403327A (zh) 2012-04-04
CN102403327B true CN102403327B (zh) 2016-01-27

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CN201110272171.6A Expired - Fee Related CN102403327B (zh) 2010-09-15 2011-09-15 成像器件和成像装置

Country Status (6)

Country Link
US (1) US20120061553A1 (enExample)
EP (1) EP2432019B1 (enExample)
JP (1) JP2012064703A (enExample)
KR (1) KR101891342B1 (enExample)
CN (1) CN102403327B (enExample)
TW (1) TWI472023B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5682312B2 (ja) 2011-01-05 2015-03-11 ソニー株式会社 固体撮像装置の製造方法
TWI595219B (zh) * 2012-05-08 2017-08-11 Sony Corp Infrared conversion element, imaging device and imaging method
CN102664185A (zh) * 2012-06-01 2012-09-12 上海中科高等研究院 Cmos图像传感器及其制作方法
KR101416552B1 (ko) * 2013-04-30 2014-08-13 클레어픽셀 주식회사 표면 플라즈몬 필터와 폴리머 필터를 이용한 이미지 센서
JP2015037102A (ja) * 2013-08-12 2015-02-23 株式会社東芝 固体撮像装置
US9520439B2 (en) 2013-09-23 2016-12-13 Omnivision Technologies, Inc. X-ray and optical image sensor
FR3014245A1 (fr) * 2013-12-04 2015-06-05 St Microelectronics Sa Procede de formation d'un dispositif integre a illumination face arriere comprenant un filtre optique metallique, et dispositif correspondant
JP2015232599A (ja) 2014-06-09 2015-12-24 ソニー株式会社 光学フィルタ、固体撮像装置、および電子機器
JP2016082133A (ja) * 2014-10-20 2016-05-16 ソニー株式会社 固体撮像素子及び電子機器
KR102360074B1 (ko) 2014-11-28 2022-02-08 삼성전자주식회사 나노 구조 컬러 필터를 채용한 이미지 센서
US9958582B2 (en) 2014-11-28 2018-05-01 Samsung Electronics Co., Ltd. Image sensor including nanostructure color filter
WO2017038542A1 (ja) * 2015-09-03 2017-03-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および電子装置
US10535701B2 (en) 2016-01-12 2020-01-14 Omnivision Technologies, Inc. Plasmonic-nanostructure sensor pixel
JP2017152511A (ja) 2016-02-24 2017-08-31 ソニー株式会社 撮像装置
CN107154428B (zh) * 2016-03-03 2019-12-24 上海新昇半导体科技有限公司 互补纳米线半导体器件及其制备方法
KR102294845B1 (ko) * 2016-08-02 2021-08-30 삼성전자주식회사 광학필터, 광학 디바이스, 및 광학필터의 제조방법
CN108615737A (zh) * 2016-12-11 2018-10-02 南京理工大学 制作在透明基材上的可提高光传感器灵敏度的结构及应用
JP7154736B2 (ja) * 2016-12-13 2022-10-18 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP6910704B2 (ja) 2016-12-13 2021-07-28 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、プラズモンフィルタ、及び、電子機器
WO2019124562A1 (ja) * 2017-12-22 2019-06-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
CN110166698A (zh) * 2019-06-28 2019-08-23 Oppo广东移动通信有限公司 对焦方法、互补金属氧化物图像传感器、终端及存储介质
WO2021015070A1 (ja) * 2019-07-22 2021-01-28 国立大学法人静岡大学 画素、固体撮像装置及び画素の製造方法
CN110346313A (zh) * 2019-07-31 2019-10-18 清华大学 一种光调制微纳结构、微集成光谱仪及光谱调制方法
EP3933461B1 (en) * 2020-07-02 2025-03-19 Samsung Electronics Co., Ltd. Spectral filter, and image sensor and electronic device including the spectral filter
US20230378211A1 (en) * 2020-10-12 2023-11-23 Nippon Telegraph And Telephone Corporation Optical element, image sensor and imaging device
JP2022138852A (ja) * 2021-03-11 2022-09-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
CN117751453A (zh) * 2021-07-16 2024-03-22 华为技术有限公司 一种图像传感器以及电子设备
WO2023021632A1 (ja) * 2021-08-18 2023-02-23 日本電信電話株式会社 光学素子、撮像素子及び撮像装置
KR102680239B1 (ko) * 2021-11-29 2024-07-01 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
US20240120360A1 (en) * 2022-10-05 2024-04-11 Samsung Electronics Co., Ltd. Method and system for light absorption enhancement in photodiodes using on-chip phase modulating thin-film optics, resonant structures and metasurfaces
JP2024095544A (ja) * 2022-12-28 2024-07-10 住友化学株式会社 固体撮像素子及び電子機器
CN119364874B (zh) * 2024-12-23 2025-07-29 国科大杭州高等研究院 一种基于微结构调控的钽镍硒中红外探测器及其应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009011439A1 (en) * 2007-07-13 2009-01-22 Canon Kabushiki Kaisha Optical filter
WO2009106316A2 (de) * 2008-02-29 2009-09-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Multispektralsensor
WO2009112174A1 (de) * 2008-03-14 2009-09-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrierter polarisationssensor
WO2010073543A1 (en) * 2008-12-26 2010-07-01 Canon Kabushiki Kaisha Optical element, image sensor including the optical element, and image pickup apparatus including the image sensor
WO2008085385A3 (en) * 2006-12-29 2011-06-23 Nanolambda, Inc. Plasmonic fabry-perot filter

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4195169B2 (ja) * 2000-03-14 2008-12-10 富士フイルム株式会社 固体撮像装置および信号処理方法
WO2005017570A2 (en) * 2003-08-06 2005-02-24 University Of Pittsburgh Surface plasmon-enhanced nano-optic devices and methods of making same
US7223960B2 (en) * 2003-12-03 2007-05-29 Micron Technology, Inc. Image sensor, an image sensor pixel, and methods of forming the same
JP2005268738A (ja) 2004-02-17 2005-09-29 Sony Corp 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
JP2005353631A (ja) 2004-06-08 2005-12-22 Sony Corp 固体撮像装置の製造方法
JP4779320B2 (ja) 2004-08-10 2011-09-28 ソニー株式会社 固体撮像装置およびその製造方法
JP4765285B2 (ja) 2004-09-13 2011-09-07 ソニー株式会社 固体撮像素子及びその製造方法
JP4982729B2 (ja) 2005-01-27 2012-07-25 国立大学法人北海道大学 超高感度画像検出装置およびその製造方法、検出方法
JP5934459B2 (ja) * 2006-04-17 2016-06-15 オムニビジョン テクノロジーズ， インコーポレイテッド アレイ化撮像システムおよび関連方法
US20090323060A1 (en) * 2006-08-02 2009-12-31 Dietmar Knipp Spectral optical sensor and method for producing an optical spectral sensor
JP2008082569A (ja) 2006-09-26 2008-04-10 Kojiro Okawa 水切り乾燥装置及び水切り乾燥方法
US20100046077A1 (en) * 2006-12-29 2010-02-25 Nanolambda Inc. Wavelength selective metallic embossing nanostructure
JP2008177191A (ja) * 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP5300344B2 (ja) 2007-07-06 2013-09-25 キヤノン株式会社 光検出素子及び撮像素子、光検出方法及び撮像方法
JP4751865B2 (ja) 2007-09-10 2011-08-17 富士フイルム株式会社 裏面照射型固体撮像素子及びその製造方法
JP5294600B2 (ja) * 2007-09-28 2013-09-18 キヤノン株式会社 標的物質検出装置、及び標的物質検出方法
TWI349123B (en) * 2007-10-19 2011-09-21 Hon Hai Prec Ind Co Ltd Imaging device and assembling method thereof
KR101385250B1 (ko) * 2007-12-11 2014-04-16 삼성전자주식회사 Ｃｍｏｓ 이미지 센서
JP5422914B2 (ja) * 2008-05-12 2014-02-19 ソニー株式会社 固体撮像装置の製造方法
JP5198150B2 (ja) * 2008-05-29 2013-05-15 株式会社東芝 固体撮像装置
JP4995231B2 (ja) * 2008-05-30 2012-08-08 キヤノン株式会社 光学フィルタ
WO2010044943A2 (en) * 2008-07-25 2010-04-22 Cornell University Light field image sensor, method and applications
JP5396809B2 (ja) * 2008-10-17 2014-01-22 ソニー株式会社 固体撮像装置、カメラ、および、固体撮像装置の製造方法
JP4770928B2 (ja) * 2009-01-13 2011-09-14 ソニー株式会社 光学素子および固体撮像素子
JP2010271049A (ja) * 2009-05-19 2010-12-02 Sony Corp ２次元固体撮像装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008085385A3 (en) * 2006-12-29 2011-06-23 Nanolambda, Inc. Plasmonic fabry-perot filter
WO2009011439A1 (en) * 2007-07-13 2009-01-22 Canon Kabushiki Kaisha Optical filter
WO2009106316A2 (de) * 2008-02-29 2009-09-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Multispektralsensor
WO2009112174A1 (de) * 2008-03-14 2009-09-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrierter polarisationssensor
WO2010073543A1 (en) * 2008-12-26 2010-07-01 Canon Kabushiki Kaisha Optical element, image sensor including the optical element, and image pickup apparatus including the image sensor

Also Published As

Publication number Publication date
KR20120029324A (ko) 2012-03-26
EP2432019B1 (en) 2015-04-15
TWI472023B (zh) 2015-02-01
CN102403327A (zh) 2012-04-04
TW201222796A (en) 2012-06-01
EP2432019A1 (en) 2012-03-21
KR101891342B1 (ko) 2018-08-24
US20120061553A1 (en) 2012-03-15
JP2012064703A (ja) 2012-03-29

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