CN102376719A - Mtp器件的单元结构 - Google Patents
Mtp器件的单元结构 Download PDFInfo
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- CN102376719A CN102376719A CN2010102515625A CN201010251562A CN102376719A CN 102376719 A CN102376719 A CN 102376719A CN 2010102515625 A CN2010102515625 A CN 2010102515625A CN 201010251562 A CN201010251562 A CN 201010251562A CN 102376719 A CN102376719 A CN 102376719A
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CN201010251562.5A CN102376719B (zh) | 2010-08-12 | 2010-08-12 | Mtp器件的单元结构 |
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CN201010251562.5A CN102376719B (zh) | 2010-08-12 | 2010-08-12 | Mtp器件的单元结构 |
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CN102376719A true CN102376719A (zh) | 2012-03-14 |
CN102376719B CN102376719B (zh) | 2014-04-16 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103794246A (zh) * | 2012-10-30 | 2014-05-14 | 上海华虹宏力半导体制造有限公司 | Mtp存储单元 |
CN104112474A (zh) * | 2014-07-21 | 2014-10-22 | 中国人民解放军国防科学技术大学 | 一种单多晶非易失存储器的存储单元 |
US8942034B2 (en) | 2013-02-05 | 2015-01-27 | Qualcomm Incorporated | System and method of programming a memory cell |
CN105047222A (zh) * | 2015-08-26 | 2015-11-11 | 苏州锋驰微电子有限公司 | 具有单层多晶的nvdram |
CN105810685A (zh) * | 2015-01-21 | 2016-07-27 | 爱思开海力士有限公司 | 具有单层栅极的非易失性存储器件及其制造方法 |
CN110649029A (zh) * | 2018-06-27 | 2020-01-03 | 力旺电子股份有限公司 | 多次编程的非挥发性存储器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101075619A (zh) * | 2005-09-13 | 2007-11-21 | 株式会社瑞萨科技 | 半导体器件 |
US20080137437A1 (en) * | 2006-01-26 | 2008-06-12 | Mosys, Inc. | Non-Volatile Memory Embedded In A Conventional Logic Process And Methods For Operating Same |
CN101373634A (zh) * | 2007-08-20 | 2009-02-25 | 隆智半导体公司 | Cmos兼容非易失性存储器单元结构、操作和阵列配置 |
JP2009088090A (ja) * | 2007-09-28 | 2009-04-23 | Renesas Technology Corp | 半導体装置 |
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2010
- 2010-08-12 CN CN201010251562.5A patent/CN102376719B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101075619A (zh) * | 2005-09-13 | 2007-11-21 | 株式会社瑞萨科技 | 半导体器件 |
US20080137437A1 (en) * | 2006-01-26 | 2008-06-12 | Mosys, Inc. | Non-Volatile Memory Embedded In A Conventional Logic Process And Methods For Operating Same |
CN101373634A (zh) * | 2007-08-20 | 2009-02-25 | 隆智半导体公司 | Cmos兼容非易失性存储器单元结构、操作和阵列配置 |
JP2009088090A (ja) * | 2007-09-28 | 2009-04-23 | Renesas Technology Corp | 半導体装置 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103794246A (zh) * | 2012-10-30 | 2014-05-14 | 上海华虹宏力半导体制造有限公司 | Mtp存储单元 |
US8942034B2 (en) | 2013-02-05 | 2015-01-27 | Qualcomm Incorporated | System and method of programming a memory cell |
US9373412B2 (en) | 2013-02-05 | 2016-06-21 | Qualcomm Incorporated | System and method of programming a memory cell |
CN104112474A (zh) * | 2014-07-21 | 2014-10-22 | 中国人民解放军国防科学技术大学 | 一种单多晶非易失存储器的存储单元 |
CN104112474B (zh) * | 2014-07-21 | 2017-12-22 | 中国人民解放军国防科学技术大学 | 一种单多晶非易失存储器的存储单元 |
US10741570B2 (en) | 2015-01-21 | 2020-08-11 | SK Hynix Inc. | Nonvolatile memory devices having single-layered gates and methods of fabricating the same |
CN105810685A (zh) * | 2015-01-21 | 2016-07-27 | 爱思开海力士有限公司 | 具有单层栅极的非易失性存储器件及其制造方法 |
CN105810685B (zh) * | 2015-01-21 | 2020-08-18 | 爱思开海力士有限公司 | 具有单层栅极的非易失性存储器件及其制造方法 |
CN105047222A (zh) * | 2015-08-26 | 2015-11-11 | 苏州锋驰微电子有限公司 | 具有单层多晶的nvdram |
CN105047222B (zh) * | 2015-08-26 | 2017-10-27 | 苏州锋驰微电子有限公司 | 具有单层多晶的nvdram |
CN110649029A (zh) * | 2018-06-27 | 2020-01-03 | 力旺电子股份有限公司 | 多次编程的非挥发性存储器 |
US11164880B2 (en) | 2018-06-27 | 2021-11-02 | Ememory Technology Inc. | Multi-time programming non-volatile memory |
CN110649029B (zh) * | 2018-06-27 | 2022-01-25 | 力旺电子股份有限公司 | 多次编程的非挥发性存储器 |
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CN102376719B (zh) | 2014-04-16 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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