CN101523559B - 具有成形浮动栅极的非易失性存储器 - Google Patents
具有成形浮动栅极的非易失性存储器 Download PDFInfo
- Publication number
- CN101523559B CN101523559B CN2007800303197A CN200780030319A CN101523559B CN 101523559 B CN101523559 B CN 101523559B CN 2007800303197 A CN2007800303197 A CN 2007800303197A CN 200780030319 A CN200780030319 A CN 200780030319A CN 101523559 B CN101523559 B CN 101523559B
- Authority
- CN
- China
- Prior art keywords
- floating grid
- current
- along
- orientation
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007667 floating Methods 0.000 title claims abstract description 203
- 230000015654 memory Effects 0.000 title claims abstract description 96
- 238000005530 etching Methods 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 75
- 230000000873 masking effect Effects 0.000 description 18
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 230000006870 function Effects 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000012940 design transfer Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/465,038 US7494860B2 (en) | 2006-08-16 | 2006-08-16 | Methods of forming nonvolatile memories with L-shaped floating gates |
US11/465,025 US7755132B2 (en) | 2006-08-16 | 2006-08-16 | Nonvolatile memories with shaped floating gates |
US11/465,038 | 2006-08-16 | ||
US11/465,025 | 2006-08-16 | ||
PCT/US2007/075041 WO2008021736A2 (en) | 2006-08-16 | 2007-08-02 | Nonvolatile memories with shaped floating gates |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101523559A CN101523559A (zh) | 2009-09-02 |
CN101523559B true CN101523559B (zh) | 2013-05-01 |
Family
ID=39100568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800303197A Expired - Fee Related CN101523559B (zh) | 2006-08-16 | 2007-08-02 | 具有成形浮动栅极的非易失性存储器 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7755132B2 (zh) |
CN (1) | CN101523559B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547945B2 (en) * | 2004-09-01 | 2009-06-16 | Micron Technology, Inc. | Transistor devices, transistor structures and semiconductor constructions |
US7282401B2 (en) | 2005-07-08 | 2007-10-16 | Micron Technology, Inc. | Method and apparatus for a self-aligned recessed access device (RAD) transistor gate |
US7867851B2 (en) | 2005-08-30 | 2011-01-11 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
US7700441B2 (en) | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
US7602001B2 (en) * | 2006-07-17 | 2009-10-13 | Micron Technology, Inc. | Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells |
US7772632B2 (en) | 2006-08-21 | 2010-08-10 | Micron Technology, Inc. | Memory arrays and methods of fabricating memory arrays |
US7589995B2 (en) | 2006-09-07 | 2009-09-15 | Micron Technology, Inc. | One-transistor memory cell with bias gate |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
JP5161560B2 (ja) * | 2007-12-28 | 2013-03-13 | 株式会社東芝 | 半導体記憶装置 |
US7960267B2 (en) * | 2009-03-31 | 2011-06-14 | Freescale Semiconductor, Inc. | Method for making a stressed non-volatile memory device |
US7821055B2 (en) * | 2009-03-31 | 2010-10-26 | Freescale Semiconductor, Inc. | Stressed semiconductor device and method for making |
CN102969346B (zh) * | 2011-08-31 | 2016-08-10 | 硅存储技术公司 | 具有带改进耦合比的浮栅和耦合栅的非易失性存储器单元 |
US9224746B2 (en) | 2013-05-21 | 2015-12-29 | Sandisk Technologies Inc. | Inverted-T word line and formation for non-volatile storage |
US9691883B2 (en) * | 2014-06-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Asymmetric formation approach for a floating gate of a split gate flash memory structure |
TWI742299B (zh) | 2017-09-15 | 2021-10-11 | 美商綠芯智慧財產有限責任公司 | 電可抹除可程式化非揮發性記憶體單元及操作記憶體單元之方法 |
TWI741204B (zh) * | 2017-09-15 | 2021-10-01 | 美商綠芯智慧財產有限責任公司 | 電可抹除可程式化記憶體單元、電可程式化及可抹除非揮發性記憶體單元及操作記憶體單元之方法 |
CN111430351B (zh) * | 2019-01-10 | 2023-02-07 | 合肥晶合集成电路股份有限公司 | 一种非易失性存储单元、阵列及其制作方法 |
CN114122138A (zh) * | 2021-11-09 | 2022-03-01 | 上海集成电路制造创新中心有限公司 | 薄膜晶体管存储器及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459091A (en) * | 1993-10-12 | 1995-10-17 | Goldstar Electron Co., Ltd. | Method for fabricating a non-volatile memory device |
US6746920B1 (en) * | 2003-01-07 | 2004-06-08 | Megawin Technology Co., Ltd. | Fabrication method of flash memory device with L-shaped floating gate |
CN1790678A (zh) * | 2004-12-16 | 2006-06-21 | 旺宏电子股份有限公司 | 闪存存储元件及其制造方法 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5043940A (en) | 1988-06-08 | 1991-08-27 | Eliyahou Harari | Flash EEPROM memory systems having multistate storage cells |
US5095344A (en) | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5070032A (en) | 1989-03-15 | 1991-12-03 | Sundisk Corporation | Method of making dense flash eeprom semiconductor memory structures |
EP1031992B1 (en) | 1989-04-13 | 2006-06-21 | SanDisk Corporation | Flash EEPROM system |
US5172338B1 (en) | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5343063A (en) | 1990-12-18 | 1994-08-30 | Sundisk Corporation | Dense vertical programmable read only memory cell structure and processes for making them |
US5712180A (en) | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5313421A (en) | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US5315541A (en) | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
JP2908163B2 (ja) | 1993-02-25 | 1999-06-21 | 株式会社東芝 | 半導体装置の製造方法 |
US5661053A (en) | 1994-05-25 | 1997-08-26 | Sandisk Corporation | Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
US5903495A (en) | 1996-03-18 | 1999-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
KR100223927B1 (ko) * | 1996-07-31 | 1999-10-15 | 구본준 | 전계 효과 트랜지스터 및 그 제조방법 |
US6040220A (en) * | 1997-10-14 | 2000-03-21 | Advanced Micro Devices, Inc. | Asymmetrical transistor formed from a gate conductor of unequal thickness |
US6281075B1 (en) | 1999-01-27 | 2001-08-28 | Sandisk Corporation | Method of controlling of floating gate oxide growth by use of an oxygen barrier |
US6151248A (en) | 1999-06-30 | 2000-11-21 | Sandisk Corporation | Dual floating gate EEPROM cell array with steering gates shared by adjacent cells |
US6103573A (en) | 1999-06-30 | 2000-08-15 | Sandisk Corporation | Processing techniques for making a dual floating gate EEPROM cell array |
EP1300888B1 (en) | 2001-10-08 | 2013-03-13 | STMicroelectronics Srl | Process for manufacturing a dual charge storage location memory cell |
US6541815B1 (en) * | 2001-10-11 | 2003-04-01 | International Business Machines Corporation | High-density dual-cell flash memory structure |
US20040084713A1 (en) * | 2002-10-30 | 2004-05-06 | Taiwan Semiconductor Manufacturing Company | Structure with composite floating gate by poly spacer in flash |
JP4472934B2 (ja) | 2002-03-27 | 2010-06-02 | イノテック株式会社 | 半導体装置および半導体メモリ |
US7411246B2 (en) * | 2002-04-01 | 2008-08-12 | Silicon Storage Technology, Inc. | Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and raised source line, and a memory array made thereby |
US6908817B2 (en) | 2002-10-09 | 2005-06-21 | Sandisk Corporation | Flash memory array with increased coupling between floating and control gates |
TW569435B (en) * | 2002-12-17 | 2004-01-01 | Nanya Technology Corp | A stacked gate flash memory and the method of fabricating the same |
US6875660B2 (en) * | 2003-02-26 | 2005-04-05 | Powerchip Semiconductor Corp. | Method of manufacturing high coupling ratio flash memory having sidewall spacer floating gate electrode |
US6822287B1 (en) * | 2003-05-30 | 2004-11-23 | Silicon Storage Technology, Inc. | Array of integrated circuit units with strapping lines to prevent punch through |
US7105406B2 (en) * | 2003-06-20 | 2006-09-12 | Sandisk Corporation | Self aligned non-volatile memory cell and process for fabrication |
JP4005962B2 (ja) * | 2003-09-22 | 2007-11-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100511598B1 (ko) * | 2003-09-24 | 2005-08-31 | 동부아남반도체 주식회사 | 플래시 메모리 제조방법 |
JP4557678B2 (ja) * | 2004-02-13 | 2010-10-06 | イノテック株式会社 | 半導体記憶装置 |
US7183153B2 (en) * | 2004-03-12 | 2007-02-27 | Sandisk Corporation | Method of manufacturing self aligned non-volatile memory cells |
US7020018B2 (en) | 2004-04-22 | 2006-03-28 | Solid State System Co., Ltd. | Nonvolatile memory device and method for fabricating the same |
KR101144218B1 (ko) * | 2004-05-06 | 2012-05-10 | 싸이던스 코포레이션 | 분리 채널 안티퓨즈 어레이 구조 |
US7312490B2 (en) * | 2005-03-31 | 2007-12-25 | Intel Corporation | Vertical memory device and method |
US7242051B2 (en) * | 2005-05-20 | 2007-07-10 | Silicon Storage Technology, Inc. | Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing |
US7247907B2 (en) * | 2005-05-20 | 2007-07-24 | Silicon Storage Technology, Inc. | Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing |
KR101094840B1 (ko) * | 2005-07-12 | 2011-12-16 | 삼성전자주식회사 | 낸드형 플래시 메모리 장치 및 그 제조 방법 |
KR100781563B1 (ko) * | 2005-08-31 | 2007-12-03 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법. |
KR101088061B1 (ko) * | 2005-10-24 | 2011-11-30 | 삼성전자주식회사 | 플로팅 게이트를 갖는 비휘발성 기억 소자 및 그 형성 방법 |
KR100745609B1 (ko) * | 2005-09-02 | 2007-08-02 | 삼성전자주식회사 | 비휘발성 메모리 및 그 형성 방법 |
JP4435095B2 (ja) * | 2006-01-04 | 2010-03-17 | 株式会社東芝 | 半導体システム |
KR100740612B1 (ko) * | 2006-02-15 | 2007-07-18 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
US7446370B2 (en) * | 2006-04-20 | 2008-11-04 | Powerchip Semiconductor Corp. | Non-volatile memory |
US7494860B2 (en) * | 2006-08-16 | 2009-02-24 | Sandisk Corporation | Methods of forming nonvolatile memories with L-shaped floating gates |
US7615445B2 (en) * | 2006-09-21 | 2009-11-10 | Sandisk Corporation | Methods of reducing coupling between floating gates in nonvolatile memory |
US20080074920A1 (en) * | 2006-09-21 | 2008-03-27 | Henry Chien | Nonvolatile Memory with Reduced Coupling Between Floating Gates |
-
2006
- 2006-08-16 US US11/465,025 patent/US7755132B2/en not_active Expired - Fee Related
-
2007
- 2007-08-02 CN CN2007800303197A patent/CN101523559B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459091A (en) * | 1993-10-12 | 1995-10-17 | Goldstar Electron Co., Ltd. | Method for fabricating a non-volatile memory device |
US6746920B1 (en) * | 2003-01-07 | 2004-06-08 | Megawin Technology Co., Ltd. | Fabrication method of flash memory device with L-shaped floating gate |
CN1790678A (zh) * | 2004-12-16 | 2006-06-21 | 旺宏电子股份有限公司 | 闪存存储元件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101523559A (zh) | 2009-09-02 |
US7755132B2 (en) | 2010-07-13 |
US20080042183A1 (en) | 2008-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101523559B (zh) | 具有成形浮动栅极的非易失性存储器 | |
KR100965112B1 (ko) | 스케일링가능 자체정렬 듀얼 플로팅 게이트 메모리 셀어레이 및 이 어레이를 형성하기 위한 방법 | |
CN102034828B (zh) | 具有垂直凸出物的浮栅结构 | |
US7183153B2 (en) | Method of manufacturing self aligned non-volatile memory cells | |
US7342272B2 (en) | Flash memory with recessed floating gate | |
US7517756B2 (en) | Flash memory array with increased coupling between floating and control gates | |
US7936003B2 (en) | Semiconductor device having transistor with vertical gate electrode and method of fabricating the same | |
JP2004510331A (ja) | 連続するビットライン導体が接触する不連続なソース拡散部とドレイン拡散部とを備えた不揮発性メモリセルアレイおよび形成方法 | |
US20070053223A1 (en) | Non-Volatile Memory Devices Having L-Shaped Floating Gate Electrodes and Methods of Forming Same | |
US7494860B2 (en) | Methods of forming nonvolatile memories with L-shaped floating gates | |
KR101166563B1 (ko) | 형상화된 플로팅 게이트를 갖는 비휘발성 메모리 | |
US7307296B2 (en) | Flash memory and fabrication method thereof | |
CN104934432A (zh) | 具有单层浮栅的非易失性存储器件 | |
US7157333B1 (en) | Non-volatile memory and fabricating method thereof | |
KR100648287B1 (ko) | 플래시 메모리 장치 및 그 제조 방법 | |
KR20060069030A (ko) | 낸드형 비휘발성 메모리 소자의 형성 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORPORATION Effective date: 20121101 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121101 Address after: Texas, USA Applicant after: Sandy Technology Corp. Address before: California, USA Applicant before: Sandisk Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Texas, USA Patentee after: SANDISK TECHNOLOGIES LLC Address before: Texas, USA Patentee before: Sandy Technology Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220302 Address after: Delaware Patentee after: Walden Technology Co.,Ltd. Address before: Texas, USA Patentee before: SANDISK TECHNOLOGIES LLC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130501 |