CN102376622A - 避免介质层中出现空洞的方法 - Google Patents
避免介质层中出现空洞的方法 Download PDFInfo
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CN201010253793XA CN102376622A (zh) | 2010-08-12 | 2010-08-12 | 避免介质层中出现空洞的方法 |
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CN201010253793XA CN102376622A (zh) | 2010-08-12 | 2010-08-12 | 避免介质层中出现空洞的方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1684262A (zh) * | 2003-09-05 | 2005-10-19 | 台湾积体电路制造股份有限公司 | 静态随机存储单元及半导体元件 |
US20070048907A1 (en) * | 2005-08-24 | 2007-03-01 | Ho Lee | Methods of forming NMOS/PMOS transistors with source/drains including strained materials and devices so formed |
CN101740471A (zh) * | 2008-11-17 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | 填充空隙沟槽和形成半导体器件的方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1684262A (zh) * | 2003-09-05 | 2005-10-19 | 台湾积体电路制造股份有限公司 | 静态随机存储单元及半导体元件 |
US20070048907A1 (en) * | 2005-08-24 | 2007-03-01 | Ho Lee | Methods of forming NMOS/PMOS transistors with source/drains including strained materials and devices so formed |
CN101740471A (zh) * | 2008-11-17 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | 填充空隙沟槽和形成半导体器件的方法 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121116 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C12 | Rejection of a patent application after its publication | ||
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Application publication date: 20120314 |