CN102299175A - InAlN/GaN异质结有源区的埋层结构和激活方法 - Google Patents
InAlN/GaN异质结有源区的埋层结构和激活方法 Download PDFInfo
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- CN102299175A CN102299175A CN2011102501580A CN201110250158A CN102299175A CN 102299175 A CN102299175 A CN 102299175A CN 2011102501580 A CN2011102501580 A CN 2011102501580A CN 201110250158 A CN201110250158 A CN 201110250158A CN 102299175 A CN102299175 A CN 102299175A
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- 238000000034 method Methods 0.000 title claims abstract description 38
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- 238000005530 etching Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 9
- 229910052738 indium Inorganic materials 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 15
- 238000003631 wet chemical etching Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000004615 ingredient Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 description 6
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
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- 238000005260 corrosion Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
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- 230000012010 growth Effects 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
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- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
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- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
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CN 201110250158 CN102299175B (zh) | 2011-08-29 | 2011-08-29 | InAlN/GaN异质结有源区的埋层结构和激活方法 |
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CN 201110250158 CN102299175B (zh) | 2011-08-29 | 2011-08-29 | InAlN/GaN异质结有源区的埋层结构和激活方法 |
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CN102299175A true CN102299175A (zh) | 2011-12-28 |
CN102299175B CN102299175B (zh) | 2013-07-17 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62165317A (ja) * | 1986-01-17 | 1987-07-21 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
JPS62176133A (ja) * | 1986-01-29 | 1987-08-01 | Sumitomo Electric Ind Ltd | 化合物半導体の選択エツチング方法 |
US20020177261A1 (en) * | 2000-10-13 | 2002-11-28 | Jong-In Song | Monolithically integrated e/d mode hemt and method for fabricating the same |
WO2003015174A2 (en) * | 2001-08-07 | 2003-02-20 | Jan Kuzmik | High electron mobility devices |
US20070018199A1 (en) * | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
CN101027776A (zh) * | 2004-09-24 | 2007-08-29 | 皇家飞利浦电子股份有限公司 | 增强-耗尽场效应晶体管结构及其制造方法 |
CN101246902A (zh) * | 2008-03-24 | 2008-08-20 | 西安电子科技大学 | InA1N/GaN异质结增强型高电子迁移率晶体管结构及制作方法 |
CN202221763U (zh) * | 2011-08-29 | 2012-05-16 | 中国电子科技集团公司第十三研究所 | InAlN/GaN 异质结有源区的埋层结构 |
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- 2011-08-29 CN CN 201110250158 patent/CN102299175B/zh not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62165317A (ja) * | 1986-01-17 | 1987-07-21 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
JPS62176133A (ja) * | 1986-01-29 | 1987-08-01 | Sumitomo Electric Ind Ltd | 化合物半導体の選択エツチング方法 |
US20020177261A1 (en) * | 2000-10-13 | 2002-11-28 | Jong-In Song | Monolithically integrated e/d mode hemt and method for fabricating the same |
WO2003015174A2 (en) * | 2001-08-07 | 2003-02-20 | Jan Kuzmik | High electron mobility devices |
CN101027776A (zh) * | 2004-09-24 | 2007-08-29 | 皇家飞利浦电子股份有限公司 | 增强-耗尽场效应晶体管结构及其制造方法 |
US20070018199A1 (en) * | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
CN101246902A (zh) * | 2008-03-24 | 2008-08-20 | 西安电子科技大学 | InA1N/GaN异质结增强型高电子迁移率晶体管结构及制作方法 |
CN202221763U (zh) * | 2011-08-29 | 2012-05-16 | 中国电子科技集团公司第十三研究所 | InAlN/GaN 异质结有源区的埋层结构 |
Non-Patent Citations (3)
Title |
---|
《Physica status solidi(c)》 20090420 Tomás Palacios等 GaN and digital electronics:A way out of Moore's law? 第6卷, * |
O.AMBACHER等: "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures", 《JOURNAL OF APPLIED PHYSICS》, vol. 87, 19 September 1999 (1999-09-19) * |
TOMÁS PALACIOS等: "GaN and digital electronics:A way out of Moore’s law?", 《PHYSICA STATUS SOLIDI(C)》, vol. 6, 20 April 2009 (2009-04-20) * |
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Inventor after: Xing Dong Inventor after: Feng Zhihong Inventor after: Fang Yulong Inventor after: Liu Bo Inventor after: Zhang Xiongwen Inventor after: Dun Shaobo Inventor after: Cai Shujun Inventor before: Xing Dong |
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Free format text: CORRECT: INVENTOR; FROM: XING DONG TO: XING DONG FENG ZHIHONG FANG YULONG LIU BO ZHANG XIONGWEN GUO SHAOBO CAI SHUJUN |
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