CN102297544A - Semiconductor refrigerating or heating module and production method thereof - Google Patents
Semiconductor refrigerating or heating module and production method thereof Download PDFInfo
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- CN102297544A CN102297544A CN 201110248441 CN201110248441A CN102297544A CN 102297544 A CN102297544 A CN 102297544A CN 201110248441 CN201110248441 CN 201110248441 CN 201110248441 A CN201110248441 A CN 201110248441A CN 102297544 A CN102297544 A CN 102297544A
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Abstract
The invention discloses a semiconductor refrigerating or heating module and a production method thereof. The production method of the semiconductor refrigerating or heating module comprises the following steps of: respectively arranging each N-type semiconductor and each P-type semiconductor between a first insulating ceramic chip and a second insulating ceramic chip in an alternated and non-contact manner; fixing at least one conducting metal sheet on the first insulating ceramic chip; fixing at least two conducting metal sheets on the second insulating ceramic chip, wherein the number of the conducting metal sheets fixed on the second insulating ceramic chip is one more than that of the conducting metal sheets on the first insulating ceramic chip; respectively fixing one N-type semiconductor and one P-type semiconductor on each conducting metal sheet on the first insulating ceramic chip; and respectively fixing the other ends of the N-type semiconductor and the P-type semiconductor on the same conducting metal sheet fixed on the first insulating ceramic chip on different conductive metal sheets on the second insulating ceramic chip. The semiconductor refrigerating or heating module and the production method thereof have the advantages of high refrigerating or heating efficiency, energy saving, simple structure, easiness for production, stable work, long service life and the like.
Description
Technical field
The present invention relates to a kind of semiconductor refrigerating or heat module and preparation method thereof, belong to semiconductor refrigerating or heat technical field.
Background technology
Utilize the characteristic of P-type semiconductor and N-type semiconductor to switch on refrigeration or the technology that heats has been widely used in refrigeration or has heated the field.At present, in the prior art, generally P-type semiconductor and N-type semiconductor are made as one and are used as the semiconductor element that freezes or heat, as application number is 200920112725.4, denomination of invention is the disclosed a kind of semiconductor refrigerating of Chinese patent literature of " semiconductor refrigerating element and semiconductor refrigeration system " or the technical scheme that heats, to be made as cylindricality to the semiconductor cooling module by the galvanic couple that P-type semiconductor and N-type semiconductor are formed exactly, and have through hole in the centre of cylinder, the end that galvanic couple is right is arranged on through hole inside, and the other end that galvanic couple is right is arranged on the outer surface of cylinder.Thisly P-type semiconductor and N-type semiconductor are made as one are used as the semiconductor element that freezes or heat, mainly exist refrigeration or the low shortcoming of electric energy conversion efficiency when heating, and owing to the radiating effect of P-type semiconductor that is made as one and N-type semiconductor is bad, be not suitable for very much high-power use, and the P-type semiconductor and the N-type semiconductor that are made as one in use be easy to wear out, thus the operating efficiency that has reduced refrigeration more or heated.Therefore, existing employing P-type semiconductor and N-type semiconductor are made as the refrigeration of one or the result of use of the semiconductor element that heats still is not ideal enough.
Summary of the invention
The objective of the invention is: provide a kind of when freezing or heating operating efficiency higher, energy-conservation and be suitable for high power work and simple in structure, make and be easy to semiconductor refrigerating or heat module and preparation method thereof, to overcome the deficiencies in the prior art.
The present invention is achieved in that a kind of semiconductor refrigerating of the present invention or heats the preparation method of module, comprise and adopt N-type semiconductor and P-type semiconductor as freezing or heating element, when adopting N-type semiconductor and P-type semiconductor to make refrigeration or heating element, with each N-type semiconductor and P-type semiconductor difference compartment of terrain, be not arranged between first insulating ceramic film and second insulating ceramic film with not being in contact with one another, fixing at least 1 conductive metal sheet on first insulating ceramic film, fixing at least 2 conductive metal sheets on second insulating ceramic film, the conductive metal sheet that promptly is fixed on second insulating ceramic film is Duoed 1 than the conductive metal sheet that is fixed on first insulating ceramic film, all fixing 1 N-type semiconductor and 1 P-type semiconductor on the every conductive metal sheet on first insulating ceramic film, and the other end that will be fixed on first insulating ceramic film N-type semiconductor on the same conductive metal sheet and P-type semiconductor is separately fixed on the different conductive metal sheet on second insulating ceramic film, and makes the N-type semiconductor that is fixed on the conductive metal sheet can be connected energising by conductive metal sheet with P-type semiconductor; To be separately positioned on the link that the both positive and negative polarity of dc source is connected on the conductive metal sheet on second insulating ceramic film.
Of the present invention a kind of semiconductor refrigerating of making according to said method or heat module and be: this module comprises N-type semiconductor and P-type semiconductor, each N-type semiconductor and P-type semiconductor are all distinguished the compartment of terrain, be not arranged in contact between first insulating ceramic film and second insulating ceramic film, on first insulating ceramic film, be fixed with at least 1 conductive metal sheet, on second insulating ceramic film, be fixed with at least 2 conductive metal sheets, and the conductive metal sheet that is fixed on second insulating ceramic film is Duoed 1 than the conductive metal sheet that is fixed on first insulating ceramic film, on every conductive metal sheet on first insulating ceramic film, all be fixedly connected with 1 N-type semiconductor and 1 P-type semiconductor, and the other end that is fixed on first insulating ceramic film N-type semiconductor on the same conductive metal sheet and P-type semiconductor is separately fixed on the different conductive metal sheet on second insulating ceramic film; The link that is connected with the both positive and negative polarity of dc source is separately positioned on the conductive metal sheet on second insulating ceramic film.
Above-mentioned with conductive metal sheet that the both positive and negative polarity of dc source is connected between be arranged with the semiconductor array that 1～1000 row is made up of N-type semiconductor and P-type semiconductor, every row's the N-type semiconductor or the quantity of P-type semiconductor are no more than 1000, and the quantity of every row's N-type semiconductor and P-type semiconductor is identical; Every row's each N-type semiconductor and P-type semiconductor are connected between the conductive metal sheet that is connected with the both positive and negative polarity of dc source end to end mutually by the conductive metal sheet on first insulating ceramic film and second insulating ceramic film respectively.
The quantity of the conductive metal sheet of said fixing on first insulating ceramic film or second insulating ceramic film is more than or equal to 2 o'clock, every conductive metal sheet all mutually insulated, do not contact mutually.
The above-mentioned semiconductor that is connected on the conductive metal sheet that connects with the positive pole of dc source is different with the semiconductor on being connected the conductive metal sheet that is connected with the negative pole of dc source, when promptly the semiconductor on being connected the conductive metal sheet that is connected with the positive pole of dc source was N-type semiconductor, the semiconductor that is connected on the conductive metal sheet that is connected with the negative pole of dc source was a P-type semiconductor; When the semiconductor on being connected the conductive metal sheet that is connected with the positive pole of dc source was P-type semiconductor, the semiconductor that is connected on the conductive metal sheet that is connected with the negative pole of dc source was a N-type semiconductor.
Being shaped as rectangle column structure, cylindrical column structure or interconnecting the column structure of forming (the device contour structures of promptly using a sand filter for marking the hours) by double cone body top of N-type semiconductor or P-type semiconductor.
Owing to adopted technique scheme, the present invention with N-type semiconductor and P-type semiconductor as independently freezing or heating element, and with each N-type semiconductor and P-type semiconductor difference compartment of terrain, be not arranged between first insulating ceramic film and second insulating ceramic film with not being in contact with one another, because each N-type semiconductor or P-type semiconductor are not in contact with one another, and all N-type semiconductors and P-type semiconductor all are that the syndeton by matrix form is arranged between first insulating ceramic film and second insulating ceramic film, therefore improved the radiating condition of each semiconductor element widely, each N-type semiconductor or P-type semiconductor can not produced to influence each other, and heat or cold all concentrating on respectively on first insulating ceramic film or second insulating ceramic film that each N-type semiconductor or P-type semiconductor are changed, thereby the refrigeration or the heating efficiency of each semiconductor element have been improved effectively, reduced power consumption, and can produce the large-power semiconductor refrigeration easily and reliably or heat module according to the needs that use.Use when of the present invention, when power supply being connected to semiconductor refrigerating of the present invention or heating on the power connector end on the module, refrigeration end will appear on first insulating ceramic film, end will appear heating on second insulating ceramic film, if polarity exchange with the power supply on the link, end then on first insulating ceramic film, will occur heating, on second insulating ceramic film, refrigeration end will occur.So, the present invention compared with prior art, the present invention not only has refrigeration or heating efficiency height, energy-saving advantages, but also have be suitable for making high power module and simple in structure, make easily, advantages such as stable work in work, long service life.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 for N-type semiconductor of the present invention or P-type semiconductor be shaped as the rectangle column structure time schematic diagram;
The schematic diagram of Fig. 3 during for the cylindrical column structure of being shaped as of N-type semiconductor of the present invention or P-type semiconductor;
Schematic diagram when Fig. 4 interconnects the column structure of forming (the device contour structures of promptly using a sand filter for marking the hours) for being shaped as of N-type semiconductor of the present invention or P-type semiconductor by double cone body top.
Description of reference numerals: 1-first insulating ceramic film, 2-second insulating ceramic film, 3-conductive metal sheet, 4-N type semiconductor, 5-P type semiconductor, E-dc source.
The specific embodiment
Below in conjunction with drawings and Examples the present invention is done further to say in detail.
Embodiments of the invention: adopting existing N-type semiconductor and P-type semiconductor as refrigeration or when heating element, the preparation method that adopts a kind of semiconductor refrigerating of the present invention or heat module is made, this method is with each N-type semiconductor and P-type semiconductor difference compartment of terrain, be not arranged between first insulating ceramic film and second insulating ceramic film with not being in contact with one another, fixing at least 1 conductive metal sheet on first insulating ceramic film, fixing at least 2 conductive metal sheets on second insulating ceramic film, the conductive metal sheet that promptly is fixed on second insulating ceramic film is Duoed 1 than the conductive metal sheet that is fixed on first insulating ceramic film, conductive metal sheet can adopt copper sheet, aluminium flake, iron plate or any sheet metal with electric conductivity can adopt traditional adhering method that conductive metal sheet is bonded on first insulating ceramic film and second insulating ceramic film; All fixing 1 N-type semiconductor and 1 P-type semiconductor on the every conductive metal sheet on first insulating ceramic film, and the other end that will be fixed on first insulating ceramic film N-type semiconductor on the same conductive metal sheet and P-type semiconductor is separately fixed on the different conductive metal sheet on second insulating ceramic film, and make the N-type semiconductor that is fixed on the conductive metal sheet can be connected energising by conductive metal sheet with P-type semiconductor, when being separately fixed at N-type semiconductor and P-type semiconductor on the conductive metal sheet, can adopt traditional sintering process or adopt traditional electrically conducting adhesive that N-type semiconductor or P-type semiconductor are separately fixed on the conductive metal sheet, will be separately positioned on the link that the both positive and negative polarity of dc source is connected on the conductive metal sheet on second insulating ceramic film.
Of the present invention a kind of semiconductor refrigerating of Zhi Zuoing or heat module and be according to the method described above, the structural representation of this module as shown in Figure 1, this module comprises existing N-type semiconductor 4 of employing and P-type semiconductor 5, the shape of N-type semiconductor 4 or P-type semiconductor 5 can be made into rectangle column structure, cylindrical column structure or be made into by double cone body top and interconnect the column structure of forming (being the common device contour structures of using a sand filter for marking the hours), the shape of these 3 kinds of structures is respectively as Fig. 2～shown in Figure 4.During making, each N-type semiconductor 4 and P-type semiconductor 5 are all distinguished the compartment of terrain, be not arranged in contact between first insulating ceramic film 1 and second insulating ceramic film 2, fixing at least 1 conductive metal sheet 3 on first insulating ceramic film 1, on second insulating ceramic film 2, be fixed with at least 2 conductive metal sheets 3, make the conductive metal sheet 3 that is fixed on second insulating ceramic film 2 than more than 31 of conductive metal sheets that are fixed on first insulating ceramic film 1, on the every conductive metal sheet 3 on first insulating ceramic film 1, all be connected and fixed 1 N-type semiconductor 4 and 1 P-type semiconductor 5, and the other end that will be fixed on first insulating ceramic film 1 N-type semiconductor 4 on the same conductive metal sheet 3 and P-type semiconductor 5 is separately fixed on the different conductive metal sheet 3 on second insulating ceramic film 2; The link that will be connected with the both positive and negative polarity of dc source E is separately positioned on the conductive metal sheet 3 on second insulating ceramic film 2 simultaneously; During making, under normal conditions, arrange the semiconductor array that 1～1000 row is made up of N-type semiconductor 4 and P-type semiconductor 5 between the conductive metal sheet 3 that can be connected at both positive and negative polarity with dc source E, the quantity of every row's N-type semiconductor 4 or P-type semiconductor 5 is controlled at is no more than 1000 scope, and make every row's N-type semiconductor 4 identical with the quantity of P-type semiconductor 5; Each N-type semiconductor 4 and P-type semiconductor 5 with every row is connected between the conductive metal sheet 3 that is connected with the both positive and negative polarity of dc source E by the conductive metal sheet 3 on first insulating ceramic film 1 and second insulating ceramic film 2 respectively mutually by end to end mode simultaneously; During making, the quantity of the conductive metal sheet 3 on being fixed on first insulating ceramic film 1 or second insulating ceramic film 2 more than or equal to 2 the time, should make every conductive metal sheet 3 all mutually insulated, do not contact mutually; During making, should the semiconductor that be connected on the conductive metal sheet 3 that connects with the positive pole of dc source E is different with the semiconductor on being connected the conductive metal sheet 3 that is connected with the negative pole of dc source E, when promptly the semiconductor on being connected the conductive metal sheet 3 that is connected with the positive pole of dc source E was N-type semiconductor 4, should make the semiconductor that is connected on the conductive metal sheet 3 that is connected with the negative pole of dc source E was P-type semiconductor 5; And the semiconductor on being connected the conductive metal sheet 3 that is connected with the positive pole of dc source E is when being P-type semiconductor 5, is N-type semiconductor 4 and will be connected semiconductor on the conductive metal sheet 3 that is connected with the negative pole of dc source E.
Claims (6)
1. a semiconductor refrigerating or heat the preparation method of module, comprise and adopt N-type semiconductor and P-type semiconductor as freezing or heating element, it is characterized in that: with each N-type semiconductor and P-type semiconductor difference compartment of terrain, be not arranged between first insulating ceramic film and second insulating ceramic film with not being in contact with one another, fixing at least 1 conductive metal sheet on first insulating ceramic film, fixing at least 2 conductive metal sheets on second insulating ceramic film, the conductive metal sheet that promptly is fixed on second insulating ceramic film is Duoed 1 than the conductive metal sheet that is fixed on first insulating ceramic film, all fixing 1 N-type semiconductor and 1 P-type semiconductor on the every conductive metal sheet on first insulating ceramic film, and the other end that will be fixed on first insulating ceramic film N-type semiconductor on the same conductive metal sheet and P-type semiconductor is separately fixed on the different conductive metal sheet on second insulating ceramic film, and makes the N-type semiconductor that is fixed on the conductive metal sheet can be connected energising by conductive metal sheet with P-type semiconductor; To be separately positioned on the link that the both positive and negative polarity of dc source is connected on the conductive metal sheet on second insulating ceramic film.
2. a semiconductor refrigerating or heat module, comprise N-type semiconductor (4) and P-type semiconductor (5), it is characterized in that: each N-type semiconductor (4) and P-type semiconductor (5) are all distinguished the compartment of terrain, be not arranged in contact between first insulating ceramic film (1) and second insulating ceramic film (2), on first insulating ceramic film (1), be fixed with at least 1 conductive metal sheet (3), on second insulating ceramic film (2), be fixed with at least 2 conductive metal sheets (3), and the conductive metal sheet (3) that is fixed on second insulating ceramic film (2) is Duoed 1 than the conductive metal sheet (3) that is fixed on first insulating ceramic film (1), on the every conductive metal sheet (3) on first insulating ceramic film (1), all be fixedly connected with 1 N-type semiconductor (4) and 1 P-type semiconductor (5), and the other end that is fixed on N-type semiconductor (4) on the last same conductive metal sheet of first insulating ceramic film (1) (3) and P-type semiconductor (5) is separately fixed on the different conductive metal sheet (3) on second insulating ceramic film (2); The link that is connected with the both positive and negative polarity of dc source (E) is separately positioned on the conductive metal sheet (3) on second insulating ceramic film (2).
3. semiconductor refrigerating according to claim 2 or heat module, it is characterized in that: between the conductive metal sheet (3) that the both positive and negative polarity with dc source (E) is connected, be arranged with the semiconductor array that 1～1000 row is made up of N-type semiconductor (4) and P-type semiconductor (5), the quantity of every row's N-type semiconductor (4) or P-type semiconductor (5) is no more than 1000, and every row's N-type semiconductor (4) is identical with the quantity of P-type semiconductor (5); Every row's each N-type semiconductor (4) and P-type semiconductor (5) are connected between the conductive metal sheet (3) that is connected with the both positive and negative polarity of dc source (E) end to end mutually by the conductive metal sheet (3) on first insulating ceramic film (1) and second insulating ceramic film (2) respectively.
4. according to claim 2 or 3 described semiconductor refrigeratings or heat module, it is characterized in that: the quantity that is fixed on the conductive metal sheet (3) on first insulating ceramic film (1) or second insulating ceramic film (2) is more than or equal to 2 o'clock, every conductive metal sheet (3) all mutually insulated, do not contact mutually.
5. according to claim 2 or 3 described semiconductor refrigeratings or heat the preparation method of module, it is characterized in that: the semiconductor that is connected on the conductive metal sheet (3) that connects with the positive pole of dc source (E) is different with the semiconductor on being connected the conductive metal sheet (3) that is connected with the negative pole of dc source (E), when promptly the semiconductor on being connected the conductive metal sheet (3) that is connected with the positive pole of dc source (E) was N-type semiconductor (4), the semiconductor that is connected on the conductive metal sheet (3) that is connected with the negative pole of dc source (E) was P-type semiconductor (5); When the semiconductor on being connected the conductive metal sheet (3) that is connected with the positive pole of dc source (E) was P-type semiconductor (5), the semiconductor that is connected on the conductive metal sheet (3) that is connected with the negative pole of dc source (E) was N-type semiconductor (4).
6. according to claim 2 or 3 described semiconductor refrigeratings or heat module, it is characterized in that: being shaped as rectangle column structure, cylindrical column structure or interconnecting the column structure of forming (the device contour structures of promptly using a sand filter for marking the hours) by double cone body top of N-type semiconductor (4) or P-type semiconductor (5).
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| CN 201110248441 CN102297544A (en) | 2011-08-26 | 2011-08-26 | Semiconductor refrigerating or heating module and production method thereof |
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| CN102628577A (en) * | 2012-03-29 | 2012-08-08 | 陈志明 | High-efficiency automobile light-emitting diode (LED) fog-proof lamp |
| CN103745960A (en) * | 2013-12-31 | 2014-04-23 | 吴江亿泰真空设备科技有限公司 | Miniature semiconductor heat radiation device |
| CN104175849A (en) * | 2014-08-04 | 2014-12-03 | 河南科技大学 | Solar thermoelectric cooling automobile cover |
| WO2014206165A1 (en) * | 2013-06-25 | 2014-12-31 | 苏州伟源新材料科技有限公司 | Low-light-failure high-power led road lamp and manufacturing method therefor |
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| CN201819471U (en) * | 2010-10-15 | 2011-05-04 | 常山县万谷电子科技有限公司 | High power refrigeration piece |
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| CN101639299A (en) * | 2008-07-31 | 2010-02-03 | 美固电子(深圳)有限公司 | Refrigeration device |
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| CN102628577B (en) * | 2012-03-29 | 2015-12-09 | 陈志明 | A kind of high efficiency automotive LED Fog-proof light |
| CN102628577A (en) * | 2012-03-29 | 2012-08-08 | 陈志明 | High-efficiency automobile light-emitting diode (LED) fog-proof lamp |
| US9989238B2 (en) | 2013-06-25 | 2018-06-05 | Zhiming Chen | Low light failure, high power led street lamp and method for manufacturing the same |
| WO2014206165A1 (en) * | 2013-06-25 | 2014-12-31 | 苏州伟源新材料科技有限公司 | Low-light-failure high-power led road lamp and manufacturing method therefor |
| WO2014206166A1 (en) * | 2013-06-25 | 2014-12-31 | 苏州伟源新材料科技有限公司 | High-power led lamp cooling device and manufacturing method therefor |
| US9412925B2 (en) | 2013-06-25 | 2016-08-09 | Zhiming Chen | High-power LED lamp cooling device and method for manufacturing the same |
| CN103745960A (en) * | 2013-12-31 | 2014-04-23 | 吴江亿泰真空设备科技有限公司 | Miniature semiconductor heat radiation device |
| CN104175849A (en) * | 2014-08-04 | 2014-12-03 | 河南科技大学 | Solar thermoelectric cooling automobile cover |
| CN106136388A (en) * | 2015-03-24 | 2016-11-23 | 华北理工大学 | A kind of self-powered positioning belt |
| CN105091400A (en) * | 2015-09-16 | 2015-11-25 | 广东富信科技股份有限公司 | Thermoelectric cooling integrated system |
| CN105913867A (en) * | 2016-03-31 | 2016-08-31 | 联想(北京)有限公司 | Adjustment device and electronic equipment |
| CN105913867B (en) * | 2016-03-31 | 2019-06-25 | 联想(北京)有限公司 | A kind of adjustment device and electronic equipment |
| CN106389181A (en) * | 2016-11-30 | 2017-02-15 | 福州品行科技发展有限公司 | Facial mask machine and use method thereof |
| CN106389181B (en) * | 2016-11-30 | 2021-02-23 | 福州品行科技发展有限公司 | Mask machine and using method thereof |
| CN106726098A (en) * | 2016-12-20 | 2017-05-31 | 商学军 | A kind of sperm health-care pants |
| CN107990589A (en) * | 2017-12-11 | 2018-05-04 | 西华大学 | A kind of unconventional thermoelectric unit |
| CN109041526A (en) * | 2018-08-14 | 2018-12-18 | 合肥超必达网络技术服务有限公司 | A kind of optical transmitter and receiver convenient for radiating dustproof |
| CN109068476A (en) * | 2018-09-10 | 2018-12-21 | 广州高雅电器有限公司 | A kind of V-CUT excision forming circuit board |
| CN109068476B (en) * | 2018-09-10 | 2020-10-13 | 江西鸿宇电路科技有限公司 | V-CUT cutting and forming circuit board |
| CN114497342A (en) * | 2022-01-25 | 2022-05-13 | 龙蔚电子技术有限公司 | Implementation method based on semiconductor refrigeration sheet |
| CN114497342B (en) * | 2022-01-25 | 2022-10-21 | 龙蔚电子技术有限公司 | Implementation method based on semiconductor refrigeration sheet |
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Application publication date: 20111228 |