CN203336367U - Low-light-failure and high-power LED street lamp - Google Patents
Low-light-failure and high-power LED street lamp Download PDFInfo
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- CN203336367U CN203336367U CN2013203695060U CN201320369506U CN203336367U CN 203336367 U CN203336367 U CN 203336367U CN 2013203695060 U CN2013203695060 U CN 2013203695060U CN 201320369506 U CN201320369506 U CN 201320369506U CN 203336367 U CN203336367 U CN 203336367U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/72—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps in street lighting
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Abstract
The utility model discloses a low-light-failure and high-power LED street lamp. The back face of a circuit board is at least connected with one lower beryllia ceramic sheet through a grapheme heat conduction grease layer, the lower beryllia ceramic sheet is provided with an upper beryllia ceramic sheet, N-type semiconductor elements and P-type semiconductor elements all of which are arranged in a matrix mode are connected between the lower beryllia ceramic sheet and the upper beryllia ceramic sheet. One end face of each N-type semiconductor element and one end face of each P-type semiconductor element are provided with electric colorized marks, the head ends of the N-type semiconductor elements connected in series in each row and the tail ends of the P-type semiconductor elements connected in series in each row are connected, or the tail ends of the N-type semiconductor elements connected in series in each row and the head ends of the P-type semiconductor elements in each row are connected, a beryllium copper plate pressing block is attached to the upper surface of the upper beryllia ceramic sheet, and a radiator is arranged on the beryllium copper plate pressing block. The low-light-failure and high-power LED street lamp has the advantages of being good in heat dissipating effect, free of light-failure when an LED light source works, long in service life, low in cost, obvious in energy-saving effect and the like.
Description
Technical field
The utility model relates to a kind of low light attenuation high-power LED street lamp, belongs to high-powered LED lamp street lamp technical field.
Background technology
At present, due to the LED Light-Emitting Diode as light source have advantages of energy-conservation, brightness is high, volume is little, be widely used in as the illumination light source.But the radiator structure mode of LED light source of the prior art generally adopts the fin of aluminium alloy structure or adopt the heavy notes aluminum component of effect to be dispelled the heat, although surface sees to have characteristics simple in structure, but owing to there is, radiating effect is poor, manufacturing cost is high, can not be effectively LED lamp during to the work shortcoming such as lowered the temperature, its result of use is very undesirable, very inapplicablely on 150 watts of high-powered LED lamps more than power, uses; In addition, because the heat radiation of section bar aluminium can produce larger step temperature, usually make to work under hot conditions as the LED Light-Emitting Diode of light emitting source, sometimes the LED Light-Emitting Diode even can be worked at the temperature higher than 70 ℃, thereby makes LED Light-Emitting Diode premature aging, significantly light decay phenomenon occurs, its luminous efficiency reduces greatly, this has not only increased the energy consumption of LED Light-Emitting Diode, but also has greatly shortened its service life, has increased use cost; And existing high-power LED street lamp is due to the needs of heat radiation, its fin must be made very greatly, so it also exists problems such as volume is large, Heavy Weight.So existing employing LED Light-Emitting Diode, as the frame mode of the LED street lamp of light source or not ideal enough, still can not be given full play to the power savings advantages that has LED light source now.
Summary of the invention
The purpose of this utility model is: provide a kind of simple in structure, volume is little, lightweight and luminous efficiency is high, long service life, low light attenuation high-power LED street lamp that energy consumption is lower, to overcome the deficiencies in the prior art.
The utility model is to form like this: a kind of low light attenuation high-power LED street lamp of the present utility model, comprise street lamp case and circuit board and continuous-current plant that the LED bulb is installed, circuit board is connected with continuous-current plant by wire, and circuit board and continuous-current plant are arranged in the street lamp case, bottom at the street lamp case is provided with transparent cover, the back side at circuit board at least is connected with beryllium oxide ceramics sheet under a slice by Graphene thermal grease conduction layer, be provided with the beryllium oxide ceramics sheet on lower beryllium oxide ceramics sheet, be connected with N-type semiconductor element and the P-type semiconductor element arranged by matrix shape between lower beryllium oxide ceramics sheet and upper beryllium oxide ceramics sheet, all be provided with the color marker of doing of conduction on an end face of N-type semiconductor element and P-type semiconductor element, this is provided with the tail end that the end face of making color marker is N-type semiconductor element or P-type semiconductor element, the other end of not making color marker of N-type semiconductor element or P-type semiconductor element is head end, the N-type semiconductor element of each row is connected by the lower conducting strip that is arranged on the upper conducting strip on upper beryllium oxide ceramics sheet and be arranged on lower beryllium oxide ceramics sheet respectively mutually with the P-type semiconductor element, and the head end of the N-type semiconductor element of each row of series connection is connected with the tail end of P-type semiconductor element or the tail end of each row N-type semiconductor element is connected with the head end of P-type semiconductor element, the N-type semiconductor element of each row be cascaded and P-type semiconductor element by the upper conducting strip that is arranged on these row two outermost end or the wire on the lower conducting strip of two outermost end with continuous-current plant, be connected, be fitted with beryllium copper plate briquetting on the upper surface of upper beryllium oxide ceramics sheet, on beryllium copper plate briquetting, be provided with radiator.
Above-mentioned radiator is comprised of radiation aluminium pedestal, heat pipe and fin, the radiation aluminium pedestal is pressed on beryllium copper plate briquetting, the hypomere of heat pipe is partly flat pattern and is mounted in the hole of radiation aluminium pedestal bottom, and the flat horizontal surface of heat pipe hypomere is fitted on beryllium copper plate briquetting, fin is connected to the epimere part of heat pipe and is arranged on the top of radiation aluminium pedestal, and the radiation aluminium pedestal is fixed by screws on circuit board.
Be filled with heat-conducting liquid in the heat pipe of above-mentioned radiator.
Side at above-mentioned street lamp case is provided with louvre.
Owing to having adopted technique scheme, the utility model is on the basis of traditional making N-type semiconductor element and P-type semiconductor element, when carrying out the section of semiconductor crystal bar, it is carried out to the coloured marking processing, thereby can identify easily head end or the tail end of N-type semiconductor element or P-type semiconductor element, and the orientation of this head end or tail end is consistent with the orientation on crystal bar when not cutting into slices.Like this, when adopting N-type semiconductor element and P-type semiconductor element to form semiconductor cold reactor galvanic couple element, just can pick out easily tail end and head end, thereby avoided in prior art when N-type is connected with the P-type semiconductor element, because distinguishing head end and tail end, thereby and the phenomenon that chaotic connection causes the semiconductor cold reactor galvanic couple element operating efficiency of made to reduce mutually end to end caused occurs.Adopt N-type of the present utility model or P-type semiconductor element when making refrigeration device, can carry out easily head end is connected with the orderly of tail end, can effectively improve the operating efficiency of each N-type and P-type semiconductor element like this, and effectively improve the refrigeration of whole refrigeration cool-down device.The semiconductor cold reactor galvanic couple element that adopts N-type semiconductor element of the present utility model and P-type semiconductor element to connect and compose is when work, the temperature difference in its cold junction and hot junction reaches 73~78 degree left and right after tested, and its refrigeration is better than semiconductor cooling device of the prior art greatly.In addition, the utility model directly carries out by force cooling refrigeration or carries out thermo-neutrality, the temperature in the time of therefore greatly reducing the work of LED light source circuit board the circuit board of LED light source by N-type and P-type semiconductor element.The utility model is when work, only mains supply need be connected on continuous-current plant and can work, at this moment the LED Light-Emitting Diode bulb be equipped with on the circuit board of LED bulb will be normally luminous, and the semiconductor cold reactor galvanic couple element be comprised of N-type and P-type semiconductor element can start to carry out refrigeration work, during this semiconductor cold reactor galvanic couple element work, the cold junction of semiconductor cold reactor galvanic couple element carries out refrigeration cool-down to the LED light source circuit board, and the heat pipe of the heat that send in the hot junction of semiconductor cold reactor galvanic couple element by radiator passes to fin, fin by dissipation of heat in air.After tested, when the circuit board of LED light source is 200 watts of power, carry out cooling heat dissipation in the situation that adopt mode of the present utility model, in continuous operation after 9000 hours, the temperature of the LED Light-Emitting Diode on the circuit board of its LED light source can not surpass 60 degree, and the light decay phenomenon does not appear in its LED Light-Emitting Diode.The weight of the low light attenuation high-power LED street lamp of 200 watts of the present utility model, less than 5 kilograms, is about 1/3 of traditional equal-wattage LED street lamp weight, and its volume is about 1/2 of traditional equal-wattage LED street lamp volume.Therefore, the utility model compared with prior art, the utility model not only has advantages of good heat dissipation effect, can greatly reduce operating temperature, the bad light of LED light source, but also has that long service life, use cost are low, good operating stability, and can improve the advantages such as operating efficiency of LED light emitting diode bulb.
The accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
The A-A sectional structure schematic diagram after street lamp case and transparent cover that removes that Fig. 2 is Fig. 1.
Description of reference numerals: 1-street lamp case, 1.1-louvre, 2-circuit board, 3-LED bulb, 4-Graphene thermal grease conduction layer, 5-transparent cover, 6-N type semiconductor element, 7-P type semiconductor element, the upper beryllium oxide ceramics sheet of 8-, beryllium oxide ceramics sheet under 9-, the upper conducting strip of 10-, conducting strip under 11-, the 12-wire, 13-continuous-current plant, 14-beryllium copper plate briquetting, the 15-radiator, 15.1-radiation aluminium pedestal, 15.2-heat pipe, 15.3-fin, 15.4-heat-conducting liquid, 16-screw.
The specific embodiment
Below in conjunction with drawings and Examples, the utility model is done further to say in detail.
Embodiment of the present utility model: the utility model is constructed according to the preparation method of following a kind of low light attenuation high-power LED street lamp, the method comprises that the existing N-type semiconductor element of employing and P-type semiconductor element carry out radiating and cooling as cooling module to the circuit board that the LED light emitting diode bulb is installed, when adopting existing N-type semiconductor element and P-type semiconductor element as cooling module, it is large that the semiconductor crystal bar that will make in advance N-type semiconductor element or P-type semiconductor element is made as a diameter, the cone shape crystal bar that the other end diameter is little (determined according to the needs that use by the large I of the smaller diameter end diameter of this cone shape crystal bar, its tapering can be controlled between 2~5 degree), then the semiconductor crystal bar of this cone shape is cut into slices and made the wafer that thickness is identical, using the smaller diameter end of every wafer as head end, larger diameter end is as tail end, and make color marker number on the breech face of every wafer, then the taper seat of every wafer cut to granulation, every wafer is all cut and is granulation into identical polygon cylinder body shape, the semiconductor of this polygon cylinder body shape is N-type semiconductor element or the P-type semiconductor element that is provided with head end and tail end, the mode of then this N-type semiconductor element and P-type semiconductor element being arranged by matrix is arranged between the upper beryllium oxide ceramics sheet and lower beryllium oxide ceramics sheet that is provided with conducting channel, the N-type semiconductor element of each row is connected mutually with the P-type semiconductor element, during series connection, make the head end of the N-type semiconductor element of each row be connected with the tail end of P-type semiconductor element or the tail end of N-type semiconductor element is connected with the head end of P-type semiconductor element, then lower beryllium oxide ceramics sheet is combined on the back side of the circuit board that the LED bulb is installed by Graphene thermal grease conduction laminating, and install radiator on upper beryllium oxide ceramics sheet, then circuit board all is arranged in the street lamp case together with radiator.
The structural representation of the of the present utility model a kind of low light attenuation high-power LED street lamp built according to said method as depicted in figs. 1 and 2, this low light attenuation high-power LED street lamp comprises street lamp case 1 and circuit board 2 and the continuous-current plant 13 of LED bulb 3 is installed, its street lamp case 1 all can adopt finished product of the prior art with circuit board 2 and continuous-current plant 13 that LED bulb 3 is installed, its street lamp case 1 should adopt that plastics or metal material are made and be provided with the street lamp case finished product that is connected tailstock with the electric pole support, circuit board 2 is connected with continuous-current plant 13 by wire in a traditional way, and circuit board 2 and continuous-current plant 13 are arranged in street lamp case 1, at least connecting by Graphene thermal grease conduction layer 4 quantity that beryllium oxide ceramics sheet 9(under a slice is connected to the lower beryllium oxide ceramics sheet 9 at circuit board 2 back sides at the back side of circuit board 2 can be according to the area definition of used circuit board 2, during making, lower beryllium oxide ceramics sheet 9 is sticked at the back side that is preferably in circuit board 2), then on lower beryllium oxide ceramics sheet 9, beryllium oxide ceramics sheet 8 is set, simultaneously between lower beryllium oxide ceramics sheet 9 and upper beryllium oxide ceramics sheet 8, is connected N-type semiconductor element 6 and the P-type semiconductor element 7 of pressing traditional matrix shape arrangement mode arrangement, during installation, should on an end face of N-type semiconductor element 6 and P-type semiconductor element 7, all produce the color marker of doing of conduction, this is provided with to the end face of the making color marker tail end as N-type semiconductor element 6 or P-type semiconductor element 7, using the other end of not making color marker of N-type semiconductor element 6 or P-type semiconductor element 7 as head end, then the N-type semiconductor element 6 of each row is connected by being arranged on the upper conducting strip 10 on upper beryllium oxide ceramics sheet 8 and the lower conducting strip 11 be arranged on lower beryllium oxide ceramics sheet 9 respectively mutually with P-type semiconductor element 7, make the head end of N-type semiconductor element 6 of each row of series connection be connected with the tail end of P-type semiconductor element 7 or the tail end of each row N-type semiconductor element 6 is connected with the head end of P-type semiconductor element 7, the N-type semiconductor element 6 of each row of being cascaded and P-type semiconductor element 7 are connected with continuous-current plant 13 by the wire 12 on the upper conducting strip 10 that is arranged on these row two outermost end or the wire 12 that is arranged on the lower conducting strip 11 of two outermost end, the mechanical strength of all fitting on the upper surface of beryllium oxide ceramics sheet 8 on every is higher and have the beryllium copper plate briquetting 14 of heat transfer property, on beryllium copper plate briquetting 14, installs radiator 15, this radiator 15 is by radiation aluminium pedestal 15.1, heat pipe 15.2 and fin 15.3 form (as shown in figure and Fig. 2), radiation aluminium pedestal 15.1 is pressed on beryllium copper plate briquetting 14, the hypomere of heat pipe 15.2 partly is made into to flat pattern and is mounted in the hole of radiation aluminium pedestal 15.1 bottoms, make the flat horizontal surface of heat pipe 15.2 hypomeres be fitted on beryllium copper plate briquetting 14 simultaneously, then fin 15.3 is connected on the epimere part of heat pipe 15.2, and fin 15.3 is arranged on to the top of radiation aluminium pedestal 15.1, then radiation aluminium pedestal 15.1 is fixed on circuit board 2 and (will notes making mutually insulated between screw 16 and circuit board 2 during connection) by screw 16, in order to reach better heat transfer and radiating effect, can be at the interior filling heat-conducting liquid 15.4 of the heat pipe 15.2 of radiator 15, while filling heat-conducting liquid 15.4, note not filling up the space in heat pipe 15.2, allow in it and leave certain clearance space, be convenient to like this heat-conducting liquid 15.4 and flow within it, heat-conducting liquid 15.4 can adopt common water, distilled water or transformer oil, in order to reach better radiating effect, can on the two sides of the symmetry of street lamp case 1, produce louvre 1.1, the last transparent cover 5 of installing in the bottom of street lamp case 1.Transparent cover 5 can adopt by traditional mode glass or lucite to make.
Claims (4)
1. a low light attenuation high-power LED street lamp, comprise street lamp case (1) and circuit board (2) and the continuous-current plant (13) of LED bulb (3) are installed, circuit board (2) is connected with continuous-current plant (13) by wire, and circuit board (2) and continuous-current plant (13) are arranged in street lamp case (1), be provided with transparent cover (5) in the bottom of street lamp case (1), it is characterized in that: the back side at circuit board (2) at least is connected with beryllium oxide ceramics sheet (9) under a slice by Graphene thermal grease conduction layer (4), be provided with upper beryllium oxide ceramics sheet (8) on lower beryllium oxide ceramics sheet (9), be connected with N-type semiconductor element (6) and the P-type semiconductor element (7) arranged by matrix shape between lower beryllium oxide ceramics sheet (9) and upper beryllium oxide ceramics sheet (8), all be provided with the color marker of doing of conduction on an end face of N-type semiconductor element (6) and P-type semiconductor element (7), this is provided with the tail end that the end face of making color marker is N-type semiconductor element (6) or P-type semiconductor element (7), the other end of not making color marker of N-type semiconductor element (6) or P-type semiconductor element (7) is head end, the N-type semiconductor element (6) of each row is connected by the lower conducting strip (11) that is arranged on the upper conducting strip (10) on upper beryllium oxide ceramics sheet (8) and be arranged on lower beryllium oxide ceramics sheet (9) respectively mutually with P-type semiconductor element (7), and the head end of the N-type semiconductor element (6) of each row of series connection is connected with the tail end of P-type semiconductor element (7) or the tail end of each row N-type semiconductor element (6) is connected with the head end of P-type semiconductor element (7), wire (12) on the lower conducting strip (11) of the N-type semiconductor element (6) of each row be cascaded and P-type semiconductor element (7) or two outermost end upper by the upper conducting strip (10) that is arranged on these row two outermost end is connected with continuous-current plant (13), be fitted with beryllium copper plate briquetting (14) on the upper surface of upper beryllium oxide ceramics sheet (8), be provided with radiator (15) on beryllium copper plate briquetting (14).
2. low light attenuation high-power LED street lamp according to claim 1, it is characterized in that: radiator (15) is by radiation aluminium pedestal (15.1), heat pipe (15.2) and fin (15.3) form, radiation aluminium pedestal (15.1) is pressed on beryllium copper plate briquetting (14), the hypomere of heat pipe (15.2) is partly flat pattern and is mounted in the hole of radiation aluminium pedestal (15.1) bottom, and the flat horizontal surface of heat pipe (15.2) hypomere is fitted on beryllium copper plate briquetting (14), fin (15.3) is connected to the epimere part of heat pipe (15.2) and is arranged on the top of radiation aluminium pedestal (15.1), radiation aluminium pedestal (15.1) is fixed on circuit board (2) by screw (16).
3. low light attenuation high-power LED street lamp according to claim 2, is characterized in that: in the heat pipe (15.2) of radiator (15), be filled with heat-conducting liquid (15.4).
4. low light attenuation high-power LED street lamp according to claim 1, is characterized in that: in the side of street lamp case (1), be provided with louvre (1.1).
Priority Applications (1)
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CN2013203695060U CN203336367U (en) | 2013-06-25 | 2013-06-25 | Low-light-failure and high-power LED street lamp |
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CN2013203695060U CN203336367U (en) | 2013-06-25 | 2013-06-25 | Low-light-failure and high-power LED street lamp |
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CN2013203695060U Withdrawn - After Issue CN203336367U (en) | 2013-06-25 | 2013-06-25 | Low-light-failure and high-power LED street lamp |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103398358A (en) * | 2013-06-25 | 2013-11-20 | 陈志明 | Low-light-degradation and high-power LED street lamp and manufacturing method thereof |
WO2014206166A1 (en) * | 2013-06-25 | 2014-12-31 | 苏州伟源新材料科技有限公司 | High-power led lamp cooling device and manufacturing method therefor |
CN104896380A (en) * | 2015-06-15 | 2015-09-09 | 遵义市义阳光电有限公司 | Powerful-cooling LED (light-emitting diode) lamp |
CN110349862A (en) * | 2019-06-28 | 2019-10-18 | 天津荣事顺发电子有限公司 | A kind of IC chip temp auto-controlled mechanism and preparation method thereof |
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2013
- 2013-06-25 CN CN2013203695060U patent/CN203336367U/en not_active Withdrawn - After Issue
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103398358A (en) * | 2013-06-25 | 2013-11-20 | 陈志明 | Low-light-degradation and high-power LED street lamp and manufacturing method thereof |
WO2014206165A1 (en) * | 2013-06-25 | 2014-12-31 | 苏州伟源新材料科技有限公司 | Low-light-failure high-power led road lamp and manufacturing method therefor |
WO2014206166A1 (en) * | 2013-06-25 | 2014-12-31 | 苏州伟源新材料科技有限公司 | High-power led lamp cooling device and manufacturing method therefor |
CN103398358B (en) * | 2013-06-25 | 2015-10-21 | 陈志明 | A kind of low light attenuation high-power LED street lamp and preparation method thereof |
US9412925B2 (en) | 2013-06-25 | 2016-08-09 | Zhiming Chen | High-power LED lamp cooling device and method for manufacturing the same |
US9989238B2 (en) | 2013-06-25 | 2018-06-05 | Zhiming Chen | Low light failure, high power led street lamp and method for manufacturing the same |
CN104896380A (en) * | 2015-06-15 | 2015-09-09 | 遵义市义阳光电有限公司 | Powerful-cooling LED (light-emitting diode) lamp |
CN110349862A (en) * | 2019-06-28 | 2019-10-18 | 天津荣事顺发电子有限公司 | A kind of IC chip temp auto-controlled mechanism and preparation method thereof |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
AV01 | Patent right actively abandoned |
Granted publication date: 20131211 Effective date of abandoning: 20151021 |
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C25 | Abandonment of patent right or utility model to avoid double patenting |