CN110349862A - A kind of IC chip temp auto-controlled mechanism and preparation method thereof - Google Patents
A kind of IC chip temp auto-controlled mechanism and preparation method thereof Download PDFInfo
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- CN110349862A CN110349862A CN201910571984.1A CN201910571984A CN110349862A CN 110349862 A CN110349862 A CN 110349862A CN 201910571984 A CN201910571984 A CN 201910571984A CN 110349862 A CN110349862 A CN 110349862A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000919 ceramic Substances 0.000 claims abstract description 97
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000002245 particle Substances 0.000 claims abstract description 38
- 238000005057 refrigeration Methods 0.000 claims description 63
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 230000017525 heat dissipation Effects 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- 239000011224 oxide ceramic Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 6
- 239000006071 cream Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract description 4
- 230000008018 melting Effects 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of IC chip temp auto-controlled mechanism and preparation method thereof, the method includes the following steps: that S1, design IC chip have outside design function, while including the function of itself temperature sensing function and output DC voltage and electric current；S2, main circuit board and semiconductor refrigerating potsherd surface metal are melted into corresponding circuit board；S3, P particle and N particle are welded between main circuit board ceramic wafer and semiconductor refrigerating potsherd with melting temperature high tin cream；S4, IC chip is welded on main circuit board potsherd with melting temperature lower tin cream, this method by temp auto-controlled IC chip, semiconductor refrigerating, ceramic substrate are organically encapsulated in conjunction with may be implemented circuit board it is highly integrated and miniaturization.
Description
Technical field
The present invention relates to IC chip technical field of heat dissipation, and in particular to a kind of IC chip temp auto-controlled mechanism and its preparation side
Method.
Background technique
When electronic product works, some makees useful work output to input power, is converted to heat there are also many electric energy
Can, make increasing without device temperature for electronic product.And the operating temperature that component allows all is limited, if actual temperature is super
The permission temperature of component is crossed, then the performance of component can degenerate, or even burn.Transistor, resistance, capacitor, transformer, print
Circuit board processed is not always the case.Especially transistor, maximum weakness are very sensitive to temperature.
Temperature change has an impact to the work dress state of electronic circuit, circuit performance.For transistor, junction temperature is higher, puts
Several superelevation are sold greatly.Furthermore temperature also has an impact to the service life of transistor.The excessively high service life that will reduce transistor of junction temperature.It is anti-
Only the thermal failure of electronic component is the main purpose of thermal control.Thermal failure refers to that electronic component has been caused due to hot factor
A kind of failure mode of its electric function is lost entirely.The basic task of electronic product Control System Design is in heat source to the external space
The channel of one low thermal resistance is provided, guarantees that heat passes rapidly, to meet the requirement of reliability.
In the prior art to heat radiation of electrical apparatus use space heat elimination, there are the drawbacks of: 1, energy loss is big；
2, radiator fan mechanical rotation for a long time, abrasion, restricted lifetime；3, radiator fan motor heat dissipation itself and friction life
Heat；4, the component of heat dissipation, the higher temperature environment in radiating element are not needed in space；Will increase in design design difficulty and
Cost；5, as components minimize, existing radiator add the space heat elimination mode of fan be difficult to accomplish it is same as IC small-sized
Change, is not available even in a smaller space；6, existing device power is increasing, the side of standby dynamic heat dissipation and space heat elimination
Formula tends not to meet higher radiating rate；Piece temperature can not be lower than 30 DEG C, for wanting retainer member temperature lower than 20 DEG C
Requirement, space refrigeration can not reach.8, the function that will affect device when in special circumstances, environment temperature is too low is made, and space dissipates
Hot device can not provide heating environment function in the short time.
Summary of the invention
For technical problem of the existing technology, the present invention provides a kind of IC chip temp auto-controlled mechanism and its preparation side
Method, the mechanism are in close contact using ceramic circuit board and IC chip, using the insulation and high thermal conductivity of ceramics, make IC chip with
The heat dissipation channel of thermal resistance very little is established in outside；Using semiconductor refrigerating mode, active heat removal is used to IC chip；Pass through IC chip
The sensor of itself experiences junction temperature, and according to the height of temperature, IC chip by output electric current and stops semiconductor refrigeration section part
Only output electric current carries out starting and stopping movement, and then improves the electronic product service life.
In order to solve technical problem of the existing technology, the present invention, which adopts the following technical scheme that, to be practiced:
A kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism, includes the following steps:
S1, ceramic substrate is chosen, the circuit figure layer comprising IC chip position is printed in ceramic substrate surface, the ceramics
There is substrate surface the first refrigeration circuit figure layer Jing Guo metalized main circuit board potsherd is made；
S2, ceramic substrate is chosen, the ceramic substrate surface has the second refrigeration circuit figure layer Jing Guo metalized
Semiconductor refrigerating potsherd is made；
S3, it is welded between main circuit board potsherd and semiconductor refrigerating potsherd by P particle and N particle；
S4, IC chip is welded in main circuit board potsherd circuit figure layer on corresponding position.
The present invention can also adopt the following technical scheme that implementation:
A kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism, includes the following steps:
S1, ceramic substrate is chosen, the circuit figure layer comprising IC chip position is printed in ceramic substrate surface, the ceramics
There is substrate surface the first refrigeration circuit figure layer Jing Guo metalized main circuit board potsherd is made；
S2, ceramic substrate is chosen, the ceramic substrate surface has the second refrigeration circuit figure layer Jing Guo metalized
Semiconductor refrigerating potsherd is made；
S3, it is welded between main circuit board ceramic wafer and semiconductor refrigerating potsherd by P particle and N particle；
S4, IC chip is welded in main circuit board potsherd circuit figure layer on corresponding position；
S5, main circuit board potsherd and semiconductor refrigerating potsherd are packaged.
In order to solve the problems in the prior art, the present invention can also adopt the following technical scheme that
A kind of IC chip self-controlled-temperature ceramic circuit mechanism, is made of mechanism body；The mechanism body includes main circuit board
Potsherd and semiconductor refrigerating potsherd；The circuit figure layer with IC chip is provided on one side surface of main circuit potsherd；
Another side surface of main circuit potsherd is provided with the first refrigeration circuit figure layer；The semiconductor refrigerating potsherd is set on surface
It is equipped with the second refrigeration circuit figure layer；The first refrigeration circuit figure layer by by P particle and N molecular articulamentums with it is described
The connection of second refrigeration circuit figure layer.
A kind of IC chip self-controlled-temperature ceramic circuit mechanism, is made of mechanism body；The mechanism body includes main circuit board
Potsherd and semiconductor refrigerating potsherd；The mechanism body includes main circuit board potsherd and semiconductor refrigerating potsherd；Institute
It states and is provided with the circuit figure layer with IC chip and the first refrigeration circuit figure layer on one side surface of main circuit potsherd；The semiconductor
The second refrigeration circuit figure layer is provided on refrigerating ceramic wafer surface；The first refrigeration circuit figure layer passes through by P particle and N particle
The articulamentum of composition is connect with the second refrigeration circuit figure layer.
Sensor is provided in the IC chip, the IC chip passes through the circuit diagram on pin and main circuit board potsherd
Layer corresponding portion connection.
Cooling mechanism is also connected on the semiconductor refrigerating potsherd.
The ceramic substrate is aluminium nitride ceramics, aluminium oxide ceramics, silicon nitride ceramics and beryllium oxide ceramics.
The main circuit board potsherd and the semiconductor refrigerating potsherd and overall package, the controllable temperature IC chip
Pin stretches out the main circuit board potsherd and other circuit connections, is connected with heat dissipation machine on the semiconductor refrigerating potsherd
Structure.
Beneficial effect
1, IC chip of the present invention experiences junction temperature by the sensor of itself, and according to the height of temperature, IC chip is half-and-half led
Body refrigerating part carries out starting and stopping movement by output electric current and stopping output electric current, can accurate temperature control；IC chip section
After temperature drop is low, it can and greatly extend the service life of IC chip.
2, the present invention is in close contact using ceramic circuit board and IC chip, using the insulation and high thermal conductivity of ceramics, is made
IC chip and the external heat dissipation channel for establishing thermal resistance very little；Using semiconductor refrigerating mode, active heat removal is used to IC chip；It mentions
Stability when high IC chip work.
3, the present invention is by by organic knot of IC chip, the first refrigeration circuit figure layer and second circuit refrigeration circuit figure layer
Close, ceramic substrate overall package may be implemented that circuit board is highly integrated and miniaturization, while reach IC chip automatic control temp effect
Most preferably.
Detailed description of the invention
Fig. 1 is a kind of one of IC chip self-controlled-temperature ceramic circuit mechanism schematic diagram of the present invention.
Fig. 2 is the two of a kind of IC chip self-controlled-temperature ceramic circuit mechanism schematic diagram of the present invention.
Fig. 3 is the three of a kind of IC chip self-controlled-temperature ceramic circuit mechanism schematic diagram of the present invention.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples.
As shown in FIG. 1 to 3, a kind of IC chip self-controlled-temperature ceramic circuit mechanism of the present invention, is made of mechanism body 101；
The mechanism body 101 includes main circuit board potsherd 102 and semiconductor refrigerating potsherd 103；The main circuit board potsherd
It is connected between 102 and the semiconductor refrigerating potsherd 103 by the articulamentum 104 being made of P particle and N particle；The main electricity
The circuit figure layer 105 with IC chip 106 and the first refrigeration circuit figure layer 107a are provided on road potsherd 102；The semiconductor
Refrigerating ceramic wafer 103 is provided with the second refrigeration circuit figure layer 107b.Heat dissipation is also connected on the semiconductor refrigerating potsherd 103
Mechanism 108.The cooling mechanism is cooling fin or radiator.The ceramic substrate (102,103) is aluminium nitride ceramics, aluminium oxide
Ceramics, silicon nitride ceramics and beryllium oxide ceramics.
A kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism, includes the following steps:
S1, ceramic substrate is chosen, the circuit figure layer comprising IC chip position is printed in ceramic substrate surface, the ceramics
There is substrate surface the first refrigeration circuit figure layer Jing Guo metalized main circuit board potsherd is made；
S2, ceramic substrate is chosen, the ceramic substrate surface has the second refrigeration circuit figure layer Jing Guo metalized
Semiconductor refrigerating potsherd is made；
S3, it is welded between main circuit board potsherd and semiconductor refrigerating potsherd by P particle and N particle；
S4, controllable temperature IC chip is welded in main circuit board potsherd circuit figure layer on corresponding position.
The present invention can also adopt the following technical scheme that implementation:
A kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism, includes the following steps:
S1, ceramic substrate is chosen, the circuit figure layer comprising IC chip position is printed in ceramic substrate surface, the ceramics
There is substrate surface the first refrigeration circuit figure layer Jing Guo metalized main circuit board potsherd is made；
S2, ceramic substrate is chosen, the ceramic substrate surface has the second refrigeration circuit figure layer Jing Guo metalized
Semiconductor refrigerating potsherd is made；
S3, it is welded between main circuit board potsherd and semiconductor refrigerating potsherd by P particle and N particle；
S4, controllable temperature IC chip is welded in main circuit board potsherd circuit figure layer on corresponding position；
S5, main circuit board potsherd and semiconductor refrigerating potsherd are packaged.
As shown in Figure 1, being provided with the circuit figure layer with IC chip 106 on 102 1 side surface of main circuit board potsherd
105；Its another side surface is arranged with the first refrigeration circuit figure layer 107a, is provided on the semiconductor refrigerating potsherd 103
Lead between second refrigeration circuit figure layer 107b, the first refrigeration circuit figure layer 107a and the second refrigeration circuit figure layer 107b
It crosses and is connected by the articulamentum 104 that P particle and N particle are constituted；The first refrigeration circuit figure layer 107a and the second refrigeration electricity
Road figure layer 107b, which mutually coincide, constitutes refrigeration current loop, good refrigeration effect.It is circumscribed with sensor 109 in the IC chip 106,
The IC chip 106 is connect by pin 110 thereon with 105 corresponding portion of circuit figure layer on main circuit board ceramic wafer 102, institute
State the through-hole 112 that main circuit board potsherd 102 is provided with signal transmission.
As shown in Fig. 2, being provided with the circuit figure layer 105 of IC chip 106 on 102 1 side surface of main circuit board potsherd
With the first refrigeration circuit figure layer 107a；The second refrigeration circuit figure layer 107b is provided on the semiconductor refrigerating potsherd 103, the
Connected between one refrigeration circuit figure layer 107a and the second refrigeration circuit figure layer 107b by constituting articulamentum 104 by P particle and N particle
It connects；Sensor 109 is embedded in the IC chip 106, sensor 109 regulates and controls the temperature of the PN junction of chip interior, institute
IC chip 106 is stated to connect by pin 110 thereon with 105 corresponding portion of circuit figure layer on main circuit board potsherd 102.
As shown in figure 3, being provided with the circuit figure layer with IC chip 106 on 102 1 side surface of main circuit board potsherd
105；It is provided with the first refrigeration circuit figure layer 107a on its another side surface, is provided on the semiconductor refrigerating potsherd 103
Second refrigeration circuit figure layer 107b, the first refrigeration circuit figure layer 107a passes through the articulamentum that is made of P particle and N particle
104 connections, the semiconductor refrigerating potsherd 103 and the 102 overall package structure 113 of main circuit board potsherd, reach collection
At circuit minimized.Encapsulating structure 113 is using frame, injection molding or plastic packaging mode in the present invention.It is embedded in the IC chip 106
There is sensor 109, sensor 109 regulates and controls the temperature of the PN junction of chip interior, and the pin 110 of the IC chip 106 is stretched
The main circuit board potsherd 102 and other circuit connections out.
A kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism includes the following steps: that is, as shown in FIG. 1 to FIG. 2
A kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism, includes the following steps:
S1, ceramic substrate is chosen, the circuit figure layer comprising IC chip position is printed in ceramic substrate surface, the ceramics
There is substrate surface the first refrigeration circuit figure layer Jing Guo metalized main circuit board potsherd is made；
S2, ceramic substrate is chosen, the ceramic substrate surface has the second refrigeration circuit figure layer Jing Guo metalized
Semiconductor refrigerating potsherd is made；
S3, it is welded between main circuit board potsherd and semiconductor refrigerating potsherd by P particle and N particle；
S4, IC chip is welded in main circuit board potsherd circuit figure layer on corresponding position.
A kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism, includes the following steps:
S1, ceramic substrate is chosen, the circuit figure layer comprising IC chip position is printed in ceramic substrate surface, the ceramics
There is substrate surface the first refrigeration circuit figure layer Jing Guo metalized main circuit board potsherd is made；
S2, ceramic substrate is chosen, the ceramic substrate surface has the second refrigeration circuit figure layer Jing Guo metalized
Semiconductor refrigerating potsherd is made；
S3, it is welded between main circuit board ceramic wafer and semiconductor refrigerating potsherd by P particle and N particle；This
In invention in S3 the high tin cream of melting temperature by son and N particle be welded on main circuit board potsherd and semiconductor refrigerating potsherd it
Between.
S4, IC chip is welded in main circuit board potsherd circuit figure layer on corresponding position；It is lower with fusing point in S4
Tin cream IC chip is welded on main circuit board potsherd.
S5, main circuit board potsherd and semiconductor refrigerating potsherd are packaged.
The present invention can also adopt the following technical scheme that implementation:
A kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism, i.e., shown in Fig. 3, include the following steps:
S1, ceramic substrate is chosen, the circuit figure layer comprising IC chip position is printed in ceramic substrate surface, the ceramics
There is substrate surface the first refrigeration circuit figure layer Jing Guo metalized main circuit board potsherd is made；
S2, ceramic substrate is chosen, the ceramic substrate surface has the second refrigeration circuit figure layer Jing Guo metalized
Semiconductor refrigerating potsherd is made；
S3, it is welded between main circuit board ceramic wafer and semiconductor refrigerating potsherd by P particle and N particle；This
In invention the high tin cream of S3 melting temperature by son and N particle be welded on main circuit board potsherd and semiconductor refrigerating potsherd it
Between；
S4, IC chip is welded in main circuit board potsherd circuit figure layer on corresponding position；It is lower with fusing point in S4
Tin cream IC chip is welded on main circuit board potsherd.
S5, main circuit board potsherd and semiconductor refrigerating potsherd are packaged.
It should be pointed out that for those of ordinary skill in the art, without departing from the inventive concept of the premise,
Various modifications and improvements can be made, and these are all within the scope of protection of the present invention.Therefore, the scope of protection of the patent of the present invention
It should be determined by the appended claims.
Claims (10)
1. a kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism, which comprises the steps of:
S1, ceramic substrate is chosen, the circuit figure layer comprising IC chip position is printed in ceramic substrate surface, the ceramic substrate
There is the first refrigeration circuit figure layer Jing Guo metalized main circuit board potsherd is made on surface；
S2, ceramic substrate is chosen, there is the ceramic substrate surface the second refrigeration circuit figure layer Jing Guo metalized to be made
Semiconductor refrigerating potsherd；
S3, it is welded between main circuit board potsherd and semiconductor refrigerating potsherd by P particle and N particle；
S4, IC chip is welded in main circuit board potsherd circuit figure layer on corresponding position.
2. a kind of preparation method of IC chip self-controlled-temperature ceramic circuit mechanism, which comprises the steps of:
S1, ceramic substrate is chosen, the circuit figure layer comprising IC chip position is printed in ceramic substrate surface, the ceramic substrate
There is the first refrigeration circuit figure layer Jing Guo metalized main circuit board potsherd is made on surface；
S2, ceramic substrate is chosen, there is the ceramic substrate surface the second refrigeration circuit figure layer Jing Guo metalized to be made
Semiconductor refrigerating potsherd；
S3, it is welded between main circuit board ceramic wafer and semiconductor refrigerating potsherd by P particle and N particle；
S4, IC chip is welded in main circuit board potsherd circuit figure layer on corresponding position；
S5, main circuit board potsherd and semiconductor refrigerating potsherd are packaged.
3. a kind of IC chip self-controlled-temperature ceramic circuit mechanism constituted using claim 1 preparation method, is made of mechanism body；
It is characterized in that, the mechanism body includes main circuit board potsherd and semiconductor refrigerating potsherd；The main circuit potsherd
The circuit figure layer with IC chip is provided on one side surface；Its another side surface is provided with the first refrigeration circuit figure layer；Described half
The second refrigeration circuit figure layer is provided on conductive ceramic piece surface；The first refrigeration circuit figure layer passes through by P particle and N particle
The articulamentum of composition is connect with the second refrigeration circuit figure layer.
4. a kind of IC chip self-controlled-temperature ceramic circuit mechanism constituted using claim 1 preparation method, is made of mechanism body；
It is characterized in that, the mechanism body includes main circuit board potsherd and semiconductor refrigerating potsherd；The main circuit potsherd
The circuit figure layer with IC chip and the first refrigeration circuit figure layer are provided on one side surface；Semiconductor refrigerating potsherd surface
On be provided with the second refrigeration circuit figure layer；The first refrigeration circuit figure layer by by P particle and N molecular articulamentums with
The second refrigeration circuit figure layer connection.
5. a kind of IC chip self-controlled-temperature ceramic circuit mechanism constituted using claim 2 preparation method, is made of mechanism body；
It is characterized in that, the mechanism body includes main circuit board potsherd and semiconductor refrigerating potsherd；The main circuit potsherd
The circuit figure layer with IC chip is provided on one side surface；Its another side surface is provided with the first refrigeration circuit figure layer；Described half
The second refrigeration circuit figure layer is provided on conductor refrigerating ceramic wafer surface；The first refrigeration circuit figure layer passes through by P particle and N
The molecular articulamentum of grain is connect with the second refrigeration circuit figure layer.
6. a kind of IC chip self-controlled-temperature ceramic circuit mechanism constituted using claim 2 preparation method, is made of mechanism body；
It is characterized in that, the mechanism body includes main circuit board potsherd and semiconductor refrigerating potsherd；The main circuit potsherd
The circuit figure layer with IC chip and the first refrigeration circuit figure layer are provided on one side surface；Semiconductor refrigerating potsherd surface
On be provided with the second refrigeration circuit figure layer；The first refrigeration circuit figure layer by by P particle and N molecular articulamentums with
The second refrigeration circuit figure layer connection.
7. a kind of IC chip self-controlled-temperature ceramic circuit mechanism according to claim 1-6, which is characterized in that described
Sensor is provided in IC chip, the IC chip is connected by the circuit figure layer corresponding portion on pin and main circuit board potsherd
It connects.
8. a kind of IC chip self-controlled-temperature ceramic circuit mechanism according to claim 7, which is characterized in that the semiconductor system
Cooling mechanism is also connected on cold potsherd.
9. a kind of IC chip self-controlled-temperature ceramic circuit mechanism according to claim 8, which is characterized in that the ceramic substrate
For aluminium nitride ceramics, aluminium oxide ceramics, silicon nitride ceramics and beryllium oxide ceramics.
10. according to the described in any item a kind of preparation methods of IC chip self-controlled-temperature ceramic circuit mechanism of claim 2,5 or 6,
It is characterized in that, the main circuit board potsherd and the semiconductor refrigerating potsherd and overall package structure, the IC chip
Pin stretch out the main circuit board potsherd and other circuit connections, be connected with heat dissipation machine on the semiconductor refrigerating potsherd
Structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910571984.1A CN110349862A (en) | 2019-06-28 | 2019-06-28 | A kind of IC chip temp auto-controlled mechanism and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910571984.1A CN110349862A (en) | 2019-06-28 | 2019-06-28 | A kind of IC chip temp auto-controlled mechanism and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN110349862A true CN110349862A (en) | 2019-10-18 |
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|---|---|---|---|
| CN201910571984.1A Pending CN110349862A (en) | 2019-06-28 | 2019-06-28 | A kind of IC chip temp auto-controlled mechanism and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111627874A (en) * | 2020-06-02 | 2020-09-04 | 青岛佳恩半导体有限公司 | High-power IGBT multifunctional packaging structure and method thereof |
| CN113629180A (en) * | 2021-07-30 | 2021-11-09 | 东莞先导先进科技有限公司 | Packaging method of miniature semiconductor refrigerator |
| US20220344233A1 (en) * | 2021-04-22 | 2022-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked semiconductor device including a cooling structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001210878A (en) * | 2000-01-26 | 2001-08-03 | Sumitomo Electric Ind Ltd | Electronic cooling device, method for manufacturing the same, and ld module using the same |
| US6455930B1 (en) * | 1999-12-13 | 2002-09-24 | Lamina Ceramics, Inc. | Integrated heat sinking packages using low temperature co-fired ceramic metal circuit board technology |
| KR20110080474A (en) * | 2010-01-06 | 2011-07-13 | 서울반도체 주식회사 | Led package with heat radiation substrate |
| CN103398358A (en) * | 2013-06-25 | 2013-11-20 | 陈志明 | Low-light-degradation and high-power LED street lamp and manufacturing method thereof |
| CN203336367U (en) * | 2013-06-25 | 2013-12-11 | 陈志明 | Low-light-failure and high-power LED street lamp |
| JP2017108021A (en) * | 2015-12-10 | 2017-06-15 | 日立金属株式会社 | Method for manufacturing multilayer ceramic substrate and multilayer ceramic substrate |
| CN210223946U (en) * | 2019-06-28 | 2020-03-31 | 天津荣事顺发电子有限公司 | IC chip automatic temperature control mechanism |
-
2019
- 2019-06-28 CN CN201910571984.1A patent/CN110349862A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455930B1 (en) * | 1999-12-13 | 2002-09-24 | Lamina Ceramics, Inc. | Integrated heat sinking packages using low temperature co-fired ceramic metal circuit board technology |
| JP2001210878A (en) * | 2000-01-26 | 2001-08-03 | Sumitomo Electric Ind Ltd | Electronic cooling device, method for manufacturing the same, and ld module using the same |
| KR20110080474A (en) * | 2010-01-06 | 2011-07-13 | 서울반도체 주식회사 | Led package with heat radiation substrate |
| CN103398358A (en) * | 2013-06-25 | 2013-11-20 | 陈志明 | Low-light-degradation and high-power LED street lamp and manufacturing method thereof |
| CN203336367U (en) * | 2013-06-25 | 2013-12-11 | 陈志明 | Low-light-failure and high-power LED street lamp |
| US20160131357A1 (en) * | 2013-06-25 | 2016-05-12 | Suzhou Weiyuan New Material Technology Co., Ltd. | Low light failure, high power led street lamp and method for manufacturing the same |
| JP2017108021A (en) * | 2015-12-10 | 2017-06-15 | 日立金属株式会社 | Method for manufacturing multilayer ceramic substrate and multilayer ceramic substrate |
| CN210223946U (en) * | 2019-06-28 | 2020-03-31 | 天津荣事顺发电子有限公司 | IC chip automatic temperature control mechanism |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111627874A (en) * | 2020-06-02 | 2020-09-04 | 青岛佳恩半导体有限公司 | High-power IGBT multifunctional packaging structure and method thereof |
| CN111627874B (en) * | 2020-06-02 | 2021-09-14 | 青岛佳恩半导体有限公司 | High-power IGBT multifunctional packaging structure and method thereof |
| US20220344233A1 (en) * | 2021-04-22 | 2022-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked semiconductor device including a cooling structure |
| US11984376B2 (en) * | 2021-04-22 | 2024-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked semiconductor device including a cooling structure |
| CN113629180A (en) * | 2021-07-30 | 2021-11-09 | 东莞先导先进科技有限公司 | Packaging method of miniature semiconductor refrigerator |
| CN113629180B (en) * | 2021-07-30 | 2024-03-29 | 东莞先导先进科技有限公司 | Packaging method of miniature semiconductor refrigerator |
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