CN114497342B - Implementation method based on semiconductor refrigeration sheet - Google Patents
Implementation method based on semiconductor refrigeration sheet Download PDFInfo
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Abstract
The invention provides a method for realizing a semiconductor-based refrigerating sheet, which comprises the following steps: step 1: acquiring the manufacturing requirement for manufacturing the refrigerating sheet, and analyzing the manufacturing requirement; and 2, step: judging whether a conventional semiconductor needs to be manufactured or not according to the analysis result, if so, performing simulation modeling according to a conventional manufacturing flow to obtain a conventional refrigerating sheet, and performing actual manufacturing; otherwise, acquiring a manufacturing list, wherein the manufacturing list comprises a plurality of manufacturing structures, and determining an improved manufacturing flow according to the structural attribute of each manufacturing structure; and step 3: carrying out simulation construction according to an improved manufacturing process to obtain an improved refrigerating sheet; and 4, step 4: every first structure to improving in the refrigeration piece simulates and detects, detects qualified back when the simulation, obtains first refrigeration piece to actual preparation obtains the second refrigeration piece, and carries out actual detection to the actual manufacture process of second refrigeration piece and second refrigeration piece. The manufacturing effectiveness and the subsequent use effectiveness of the refrigerating sheet are effectively ensured.
Description
Technical Field
The invention relates to the technical field of semiconductor refrigeration, in particular to a realization method based on a semiconductor refrigeration piece.
Background
The thermoelectric conversion technology is a technology for directly converting thermal energy and electric energy by utilizing the seebeck effect and the peltier effect of a material, and includes thermoelectric power generation and thermoelectric refrigeration. The technology has the characteristics of small system volume, high reliability, no pollutant emission, wide applicable temperature range and the like. The high-precision temperature control device is used as a special power supply and a high-precision temperature control device, and is widely applied to high and new technical fields such as space technology, military equipment, information technology and the like. Although thermoelectric materials have such many advantages and are expected to play a great role in various aspects of human life, the conversion efficiency of the existing thermoelectric materials is low, which limits the wide application of the thermoelectric materials. Thermoelectric materials with high thermoelectric figure of merit (ZT value) are needed to improve conversion efficiency, and in order to have a higher ZT, the materials must have a high seebeck coefficient α, high electrical conductivity, and low thermal conductivity.
The Bi2Te3 thermoelectric material widely adopted by the prior semiconductor thermoelectric refrigeration technology has the following problems:
compared with the common semiconductor material, the material has too low carrier mobility and poor conductivity, and the doping concentration of the material has to be increased to 1019cm to obtain the highest figure of merit (ZT) -3 And (4) horizontal.
Secondly, the forbidden band width Eg =0.145ev, which is too narrow, and the metal at the cold and hot ends of the thermocouple is contacted with the thermocouple at 1019cm -3 The current carrier passes through the interface layer according to the tunneling conduction mechanism under the doping concentration, the high temperature difference electromotive force is avoided, the Seebeck effect is weak, and the thermoelectric coefficient alpha is low. Therefore, tens to hundreds of thermocouples are particularly required to be connected in series to form an assembly so as to improve the temperature difference of the cold end and the hot end. The series modules have high internal resistance, and the interior of the modules generates overhigh joule heat in the operation process. Limit the improvement of the thermoelectric conversion efficiency (in general)<40%) severely limited its application.
At present, a great deal of research is focused on how to improve the thermoelectric property of the BiTe material through various means, but at present, the research at home and abroad is focused on improving the thermoelectric property of the Bi2Te3 material through various means or seeking for a semiconductor material with better thermoelectric property. For a certain material, three parameters of a Seebeck coefficient alpha, an electric conductivity coefficient sigma and a heat conductivity coefficient lambda determining the thermoelectric performance of the material are mutually coupled and restricted, so that the ZT value is difficult to be fundamentally improved. Therefore, the present invention is to provide a method for implementing a semiconductor cooling plate, so as to effectively improve the thermoelectric conversion efficiency of the semiconductor cooling plate.
Disclosure of Invention
The invention provides a semiconductor-based refrigerating piece realization method, which is used for improving the thermoelectric conversion efficiency of a refrigerating piece by determining and improving the manufacturing process of the refrigerating piece and modifying the manufacturing process according to the structure, and further effectively ensuring the manufacturing effectiveness and the subsequent use effectiveness of the refrigerating piece through simulation detection and actual detection.
The invention provides a semiconductor-based refrigerating sheet implementation method, which comprises the following steps:
step 1: acquiring the manufacturing requirement for manufacturing the refrigerating sheet, and analyzing the manufacturing requirement;
step 2: judging whether a conventional semiconductor needs to be manufactured or not according to the analysis result, if so, performing simulation modeling according to a conventional manufacturing flow to obtain a conventional refrigerating sheet, and performing actual manufacturing;
otherwise, acquiring a manufacturing list, wherein the manufacturing list comprises a plurality of manufacturing structures, and determining an improved manufacturing process according to the structure attribute of each manufacturing structure;
and 3, step 3: carrying out simulation construction according to an improved manufacturing process to obtain an improved refrigerating sheet;
and 4, step 4: every first structure to improving in the refrigeration piece simulates and detects, detects qualified back when the simulation, obtains first refrigeration piece to actually make first refrigeration piece, obtain the second refrigeration piece, and carry out actual detection to the actual manufacture process of second refrigeration piece and second refrigeration piece.
In a possible implementation manner, after parsing the manufacturing requirement, the method further includes:
judging the manufacturing conditions met by the manufacturing requirements according to the analysis result, and judging that a conventional refrigerating sheet needs to be constructed when the conventional manufacturing conditions are met;
when the improved manufacturing conditions are met, it is determined that an improved refrigeration pill needs to be constructed.
In one possible implementation, the improvement of the refrigeration plate comprises:
the semiconductor refrigeration piece unit comprises a cold end substrate and a hot end substrate;
the lower surface of the cold end substrate is provided with a cold end conductive plate, and the upper surface of the hot end substrate is provided with a hot end conductive plate and a hot end conductive plate respectively;
one end of the N-type thermoelectric arm is connected with the cold-end conductive plate through the Schottky barrier contact layer, and the other end of the N-type thermoelectric arm is connected with the hot-end conductive plate through the ohmic contact layer;
one end of the P-type thermoelectric arm is connected with the cold-end conductive plate through the Schottky barrier contact layer, and the other end of the P-type thermoelectric arm is connected with the hot-end conductive plate through the ohmic contact layer.
In a possible implementation mode, the N-type thermoelectric arm and the P-type thermoelectric arm N5 are compounded by functional materials, and the material selection is related to a compound with a large forbidden band width.
In one possible implementation, the schottky barrier associated with the N-type thermoelectric leg is in reverse bias operation and the schottky barrier associated with the P-type thermoelectric leg is in forward bias operation.
In one possible implementation, the schottky barrier contact layer is formed by depositing nickel metal on the N-type thermoelectric arm to form a schottky barrier;
the Schottky barrier contact layer is formed by depositing nickel metal on the P-type thermoelectric arm.
In a possible implementation manner, step 1, acquiring a manufacturing requirement for manufacturing a refrigeration piece, and resolving the manufacturing requirement includes:
acquiring and counting sub-requirement input orders related to the manufacturing requirement, acquiring sub-requirement information corresponding to each sub-requirement input order, and further constructing an input requirement mapping table;
comparing the input requirement mapping table with a conventional manufacturing mapping table and an improved manufacturing mapping table respectively;
if the input requirement mapping table is matched with the conventional manufacturing mapping table, outputting a first analysis result;
if the input demand mapping table is matched with the improved manufacturing mapping table, outputting a second analysis result;
if the input demand mapping table is not matched with the conventional manufacturing mapping table and is not matched with the improved manufacturing mapping table, outputting a continuous analysis instruction;
based on the continuous analysis instruction, acquiring a manufacturing judgment standard, classifying all the sub-demand information, performing first labeling on the input sequence of the sub-demand information which is larger than the corresponding class preset judgment value in the same type of information, performing second labeling on the rest sequence, acquiring a demand format execution standard, determining the execution format corresponding to each sub-demand information, and establishing the time code of the executable time corresponding to each execution format;
determining the satisfaction degree of the first labeling result, the second labeling result and the time coding result of each piece of sub-requirement information based on the conventional manufacturing condition to construct a first degree table, and simultaneously determining the satisfaction degree of the first labeling result, the second labeling result and the time coding result of each piece of sub-requirement information based on the improved manufacturing condition to construct a second degree table;
and circularly verifying the first degree table according to the conventional manufacturing mapping table, circularly verifying the second degree table according to the improved manufacturing mapping table, acquiring the degree table passing the circular verification, using the degree table as a final table, and outputting a third analysis result.
In a possible implementation manner, step 2, obtaining a production list, and determining an improved production process according to a structure attribute of each production structure, includes:
when the input demand mapping table is matched with the improved manufacturing mapping table, the input demand mapping table is regarded as a first mapping table and is input into the process manufacturing model according to the related parameters of the first mapping table to obtain a first process list;
acquiring an initial manufacturing list of an improved manufacturing mapping table, and if the flow execution sequence of the initial manufacturing list is consistent with the execution sequence of the first flow list, determining the flow of the initial manufacturing list as an improved manufacturing flow;
if the execution sequence of the flow of the initial manufacturing list is inconsistent with the execution sequence of the first flow list, determining a first structure set corresponding to the conventional manufacturing condition and a second structure set corresponding to the improved manufacturing condition, and determining an added structure, a deleted structure, an improved structure and an unchanged structure of the second structure set based on the first structure set;
meanwhile, according to the variation attribute of each manufacturing structure, setting a variation label, determining the condition difference between the improved manufacturing condition and the conventional manufacturing condition, and acquiring the factor object of each difference factor corresponding to the condition difference and the object characteristic of each factor object to construct a first difference list;
judging the execution importance of the flows corresponding to the inconsistent execution sequence, constructing a second difference list according to the inconsistent execution sequence, and determining the number of the difference sequences related to the corresponding manufacturing structures in the second difference list;
acquiring the structure attribute of each manufacturing structure in the second structure set, and acquiring the difference attribute of each difference grid in the first difference list;
comparing the structure attribute with the difference attribute to determine difference information corresponding to each manufacturing structure in the second structure set;
setting a difference label to the corresponding manufacturing structure according to the difference information and the number of the difference sequences;
distributing a structure weight to the corresponding manufacturing structure in the second structure set according to the difference label and the change label:
and deploying the manufacturing sequence of each manufacturing structure in the second structure set according to the structure weight and the improved execution standard to obtain an improved manufacturing flow.
In a possible implementation manner, the actual manufacturing process of the second cooling plate and the actual detection process of the second cooling plate include:
monitoring the manufacturing process of each third structure of the second refrigerating sheet, and scanning each external surface of each third structure when one third structure is manufactured according to the manufacturing process to obtain point cloud data of the third structure;
according to the point cloud data, acquiring a plurality of surface images of each third structure, performing pixel analysis on each surface image, and determining concave-convex information of each surface, wherein the concave-convex information comprises: concave-convex position, concave depth and convex height;
determining a face analysis value F of the corresponding face according to the concave-convex information and the face necessary weight ∈ of the corresponding face;
wherein G1 represents the total number of the protrusions of the corresponding surface, and G2 represents the pairThe total number of the depressions of the corresponding surface; is a direct change j1 A position weight indicating the position of the j1 st bump of the corresponding surface; is at a position of j2 A position weight indicating the position of the jth 2 th recess of the corresponding face; f. of j1 The height of the j1 th projection representing the corresponding face; f. of j2 The depth of the j2 nd depression representing the corresponding face;
necessary analysis of weights based on surface relief of each surface
Screening all the surfaces of the third structure according to the surface analysis value F to obtain a first surface;
based on an optical detection technology, performing defect detection on the first surface to construct defect characteristics, performing first reminding when the defect characteristics belong to non-negligible characteristics, and determining error operation in the manufacturing process according to the supervision result of the first surface;
determining a repair scheme of the defect characteristics based on the faulty operation and the non-negligible characteristics, and simultaneously determining the repair importance degree;
wherein A ≧ B represents the intersection feature between the faulty feature A and the non-negligible feature B corresponding to the faulty operation; AUB represents a union feature between a fault feature A and a non-ignorable feature B corresponding to the fault operation; y1= Z (A-A ≠ B) indicates that the residual features of the faulty feature A excluding the intersection feature are based on the effective function of the production flow; y2= Z (B-ase:Sub>A ≠ B) denotes that the remaining ones of the non-negligible features B excluding the intersection features are based on the significance function of the production flow; z (A ≈ B) represents an effective function of the intersection feature based on the production flow;
a trim function representing the composition of the intersection feature to union feature ratios; wherein the effective function and the corresponding residual feature are based on the presentation position of the corresponding third structure and the influence degree of the residual feature on the corresponding third structure(ii) related; k represents the importance degree of repair based on the fault operation and the non-negligible characteristics; h1 represents a feature weight of the remaining feature corresponding to Y1; h2 represents a feature weight of the remaining feature corresponding to Y2; h3 represents a feature weight related to the intersection feature; e (.) represents an exponential function;
and carrying out repair reminding of corresponding levels according to the repair importance degree, and carrying out corresponding repair according to a repair scheme.
In a possible implementation manner, after the manufacturing and the repairing are completed, the second refrigeration sheet is actually detected according to the actual detection index, and a comprehensive detection set W = { W = is constructed i ，i＝1，2，...，s1}；
Wherein w i ＝{w ij ，j＝1，2，...，s2}，w i A detection set representing the ith actual detection index, and s1 representing the number of the actual detection indexes; w is a ij The detection result of the ith actual detection index in the jth detection is shown, and s2 shows the total detection times of the ith actual detection index;
determining current environmental information for actually manufacturing the second refrigeration piece, estimating the pollution condition of the second refrigeration piece according to the current environmental information, integrating a comprehensive detection set W, and determining a qualified value P of the second refrigeration piece;
wherein beta represents the influence value of the additional potential caused by the pollution condition on the second refrigerating sheet; r is a radical of hydrogen 1 Indicating an allowable maximum cooling condition of the second cooling plate; r is a radical of hydrogen 2 Indicating an allowable minimum cooling condition of the second cooling plate; delta T represents the simulated refrigeration range difference of the second refrigeration piece; d is a radical of ij Represents the detection result w of the jth actual detection index during the jth detection ij Corresponding standard conversion values;
when the qualified value P is larger than the preset value Y, judging that the second refrigerating sheet is qualified;
otherwise, alarming and reminding are carried out.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a flow chart of a method for implementing a semiconductor-based cooling plate according to an embodiment of the present invention;
FIG. 2 is a block diagram of an improved refrigeration pill in an embodiment of the present invention;
FIG. 3 is a block diagram of an embodiment of the present invention;
FIG. 4 is a front energy band diagram in an embodiment of the present invention;
FIG. 5 is a diagram of a cascade structure in an embodiment of the present invention;
FIG. 6 is an explanatory diagram of a cascade structure in the embodiment of the invention;
FIG. 7 is a schematic diagram of a configuration in which multiple NP thermoelectric units operate in series in accordance with an embodiment of the present invention;
the figure is as follows: cold junction base plate 1, hot junction base plate 11, cold junction current-conducting plate 2, hot junction current-conducting plate 10, hot junction current-conducting plate 7, N type thermoelectric arm 8, schottky barrier contact layer 3, ohmic contact layer 9, P type thermoelectric arm 5, schottky barrier contact layer 4, ohmic contact layer 6.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
Example 1:
the invention provides a method for realizing a semiconductor-based refrigerating sheet, which comprises the following steps of:
step 1: acquiring the manufacturing requirement for manufacturing the refrigerating sheet, and analyzing the manufacturing requirement;
and 2, step: judging whether a conventional semiconductor needs to be manufactured or not according to the analysis result, if so, performing simulation modeling according to a conventional manufacturing flow to obtain a conventional refrigerating sheet, and performing actual manufacturing;
otherwise, acquiring a manufacturing list, wherein the manufacturing list comprises a plurality of manufacturing structures, and determining an improved manufacturing flow according to the structural attribute of each manufacturing structure;
and 3, step 3: carrying out simulation construction according to an improved manufacturing process to obtain an improved refrigerating sheet;
and 4, step 4: every first structure to improving in the refrigeration piece simulates and detects, detects qualified back when the simulation, obtains first refrigeration piece to actually make first refrigeration piece, obtain the second refrigeration piece, and carry out actual detection to the actual manufacture process of second refrigeration piece and second refrigeration piece.
In this embodiment, the manufacturing requirement may be a manufacturing requirement input in advance by a manufacturer, for example, a requirement related to relevant necessary parameters of the refrigeration sheet, such as seebeck coefficient α, electrical conductivity σ, thermal conductivity λ, and the like, or an input of the manufacturer for a key step involved in the manufacturing step, for example, a structural layout of the N-type thermoelectric arm and the P-type hot spot arm, and the like, may be regarded as a sub-requirement.
In this embodiment, the conventional semiconductor may be an existing refrigerating sheet which is already designed and put into market, and the conventional semiconductor is manufactured according to a conventional manufacturing flow because the manufacturing process of the conventional refrigerating sheet is well known.
In this embodiment, the manufacturing list is a manufacturing flow chart for an improved refrigerating sheet, the improved refrigerating sheet is different from a conventional refrigerating sheet in ZT value, and the manufacturing flow in the manufacturing list is a preset setting process for the improved refrigerating sheet, however, in the manufacturing process, because the attention degrees to different sub-requirements are different and the structural attributes of each structure are different, in the manufacturing process, the flow in the manufacturing list can be adjusted, on one hand, the stability of the manufactured ZT value is ensured, on the other hand, the better matching requirement is achieved, the better manufacturing of a certain flow is achieved, and the effectiveness of manufacturing the finally improved refrigerating sheet is ensured,
in this embodiment, fabricating the structure includes, for example: cold side substrate 1 and hot side substrate 11, cold side conductive plate 2, hot side conductive plate 10, hot side conductive plate 7, etc., as shown in fig. 2.
In this embodiment, the structural properties are determined, for example, in relation to the materials required for the structure or in relation to the necessary parameters relating to the refrigeration plate.
In the embodiment, the simulation construction is realized on the existing refrigerating sheet design platform, so that the refrigerating sheet can realize corresponding functions in the simulation process, and an effective basis is provided for actual construction.
In this embodiment, carry out actual detection and be in order to detect the refrigeration piece that actually makes, guarantee the qualification nature of this material object, further guarantee the validity of use of this refrigeration piece.
The beneficial effects of the above technical scheme are: the manufacturing process of the refrigerating sheet is determined and improved, the manufacturing process is modified according to the structure, the ZT value of the refrigerating sheet is improved, and the manufacturing effectiveness and the subsequent use effectiveness of the refrigerating sheet are effectively guaranteed through simulation detection and actual detection.
Example 2:
based on embodiment 1, after analyzing the manufacturing requirement, the method further includes:
judging the manufacturing conditions met by the manufacturing requirements according to the analysis result, and judging that a conventional refrigerating sheet needs to be constructed when the conventional manufacturing conditions are met;
when the improved manufacturing conditions are met, it is determined that an improved refrigeration pill needs to be constructed.
The beneficial effects of the above technical scheme are: by determining the type of refrigeration sheet that needs to be constructed, the subsequent operation is effectively performed.
Example 3:
based on embodiment 1, as shown in fig. 2, the improved refrigeration sheet includes:
the semiconductor refrigeration piece unit comprises a cold end substrate 1 and a hot end substrate 11;
cold end conducting plate 2 is arranged on the lower surface of cold end substrate 1, and hot end conducting plate 10 and hot end conducting plate 7 are respectively arranged on the upper surface of hot end substrate 11;
one end of the N-type thermoelectric arm 8 is connected with the cold-end conductive plate 2 through the Schottky barrier contact layer 3, and the other end of the N-type thermoelectric arm 8 is connected with the hot-end conductive plate 10 through the ohmic contact layer 9;
one end of the P-type thermoelectric arm 5 is connected with the cold-end conductive plate 2 through the Schottky barrier contact layer 4, and the other end of the P-type thermoelectric arm 5 is connected with the hot-end conductive plate 7 through the ohmic contact layer 6.
Preferably, the N-type thermoelectric arm 8 and the P-type thermoelectric arm N5 are composed of functional materials in a composite mode, and the material selection is related to compounds with large forbidden band widths.
Preferably, schottky barrier 3 connected to N-type thermoelectric leg 8 is in reverse bias operation and schottky barrier 4 connected to P-type thermoelectric leg 5 is in forward bias operation.
Preferably, the schottky barrier contact layer 3 is formed by depositing metal nickel on the N-type hot arm 8 to form a schottky barrier;
the schottky barrier contact layer 4 is formed by depositing nickel metal on the P-type hot arm 5 to form a schottky barrier.
In the embodiment, a compound semiconductor material with a larger forbidden band width is doped to be used as a composite material of the N-type thermoelectric arm and the P-type thermoelectric arm, and a Schottky barrier contact is introduced at one end of the cold end and the hot end so as to enhance the thermoelectric effect. The physical mechanism of the conversion between electric heat and heat in the thermoelectric effect is actually the process of converting electric potential energy into thermal energy, that is, energy carriers obtain potential energy from an external electric field to promote and absorb heat, and then the potential energy drops in the motion process to release heat. Fig. 3-6 are diagrams illustrating the heat absorption, heat release and refrigeration nature of a thermoelectric unit and a thermoelectric unit cascade structure, respectively, according to the present invention. The compound semiconductor material with larger forbidden bandwidth is introduced by contacting with Schottky barrier, so that the temperature difference electromotive force, thermoelectric figure of merit (ZT value) and working temperature of the thermoelectric unit can be improved, the performance of the thermoelectric refrigeration unit is comprehensively improved, and the cost is reduced.
In this example, the thermoelectric material ZT value is a thermoelectric figure of merit. Thermoelectric efficiency of a material may be evaluated as defined thermoelectric figure of merit (ZT).
In this embodiment, the compound semiconductor material with the forbidden band width of the N-type thermoelectric arm and the P-type thermoelectric arm includes compounds such as InAs, inSb, inP, cdTe, etc., and the N-type thermoelectric arm and the P-type thermoelectric arm are matched and doped to obtain excellent thermoelectric performance.
In this embodiment, the N-type thermoelectric arm selects high-conductivity layer InAs (N) ++ [Si]6E19cm -3 ) A substrate material base, a thermoelectric effect layer InP ([ S ] is grown on the front surface by a Metal Organic Chemical Vapor Deposition (MOCVD) method or a Molecular Beam Epitaxy (MBE) method at the temperature of 500-700 DEG C]or[Sn]1E16cm -3 ) Then, a thermoelectric effect layer InP ([ S ]) is grown on the back surface]or[Sn]1E16cm -3 )。
In this example, the P-type thermoelectric legs are made of a high-conductivity layer InSb (P) ++ [Ge]2E19cm -3 ) Based on the substrate material, a thermoelectric effect layer CdTe (P, [ Zn ] is grown on the front surface of the substrate material by a Metal Organic Chemical Vapor Deposition (MOCVD) method or a Molecular Beam Epitaxy (MBE) method at 500-700 DEG C]1E16cm -3 ) Then growing a thermoelectric effect layer CdTe (P, [ Zn ]) on the back surface]1E16cm -3 )。
In this embodiment, the connection mode of the N-type and P-type thermoelectric arms and the cold-end conductive plates is schottky barrier contact, and the connection mode of the N-type and P-type thermoelectric arms and the two hot-end conductive plates is ohmic contact.
In this embodiment, the thermoelectric unit composed of the N-type thermoelectric legs and the P-type thermoelectric legs needs to apply a reasonable electric field direction. After forward bias is applied, the n-type arm Schottky barrier of the thermocouple is in reverse bias, and the P-type arm Schottky barrier is in forward bias. When the electrons move to the P-type arm forward bias Schottky barrier junction, the potential energy is promoted to absorb heat, and the electrons move to the n-type arm reverse bias Schottky barrier junction to emit heat from low energy reduction. Similarly, the holes move to the n-type arm reverse bias Schottky barrier junction to absorb heat, the holes move to the P-type arm forward bias Schottky barrier junction to release heat, and the superposition of the two results in that the Schottky junction absorbs heat to become a cold end and the ohmic junction releases heat to become a hot end.
In this embodiment, the PN thermoelectric unit can be used in a plurality of cascade structures to increase the operating voltage, and finally welded to a heat sink (W-Cu alloy) to be combined into a cooling plate, as shown in fig. 7, and the PN thermoelectric unit can be used in a plurality of parallel structures to increase the operating current, in fig. 7, c1 is a metal conductor, c2 is a metal contact, c3 is a schottky contact, and c4 is ceramic.
Generally, compared with the prior art, the above technical solution mainly has the following technical points:
(1) The invention adopts the collocation of compound semiconductor materials with larger forbidden bandwidth to construct the NP thermoelectric unit, and the forbidden bandwidth of the NP thermoelectric unit is more than 10 times of that of the BiTe material. The wider forbidden band makes the heat carried by the electrons larger, and better thermoelectric performance and higher working temperature are obtained. Due to the adoption of the combination method of the composite functional materials, the mutual coupling and restriction of three thermoelectric performance parameters of a single material, namely the Seebeck coefficient alpha, the electric conductivity coefficient sigma and the heat conductivity coefficient lambda can be broken through, the selection range of the material combination is large, the thermoelectric unit with high ZT value and excellent thermoelectric performance is easier to realize, the manufacturing process is simpler, and the cost is low.
(2) The invention provides a Schottky barrier contact introduced at one end of a cold and hot end of an NP thermoelectric unit so as to enhance the thermoelectric effect. Firstly, the potential energy of the charge carriers is improved by positively biasing the Schottky barrier, and more potential energy is directionally transferred and more heat is converted under the drive of the high potential of the charge carriers, so that the Seeback (Seaback) effect is enhanced. Secondly, the internal resistance of the thermoelectric couple pair is improved, the internal resistance is provided by a Schottky barrier, current is conducted on the increased internal resistance (1K omega) by a carrier passing the barrier through a thermionic-field emission mechanism, no internal energy is consumed to generate Joule heat, the temperature difference between the cold end and the hot end can be improved by increasing the direct current of a power supply, the thermoelectric conversion efficiency of the refrigerating sheet is improved, and the ZT value of the thermoelectric unit is further improved.
Example 4:
based on the embodiment 1, the step 1 of obtaining the manufacturing requirement for manufacturing the refrigerating sheet and analyzing the manufacturing requirement includes:
acquiring and counting sub-requirement input orders related to the manufacturing requirement, acquiring sub-requirement information corresponding to each sub-requirement input order, and further constructing an input requirement mapping table;
comparing the input requirement mapping table with a conventional manufacturing mapping table and an improved manufacturing mapping table respectively;
if the input requirement mapping table is matched with the conventional manufacturing mapping table, outputting a first analysis result;
if the input demand mapping table is matched with the improved manufacturing mapping table, outputting a second analysis result;
if the input demand mapping table is not matched with the conventional manufacturing mapping table and is not matched with the improved manufacturing mapping table, outputting a continuous analysis instruction;
based on the continuous analysis instruction, acquiring a manufacturing judgment standard, classifying all the sub-demand information, carrying out first labeling on the input sequence of the sub-demand information of the same type of information, which is greater than the corresponding type of preset judgment value, and carrying out second labeling on the rest sequence, acquiring a demand format execution standard, determining the execution format corresponding to each sub-demand information, and establishing the time code of the executable time corresponding to each execution format;
determining the satisfaction degree of the first labeling result, the second labeling result and the time coding result of each piece of sub-requirement information based on the conventional manufacturing condition to construct a first degree table, and simultaneously determining the satisfaction degree of the first labeling result, the second labeling result and the time coding result of each piece of sub-requirement information based on the improved manufacturing condition to construct a second degree table;
and circularly verifying the first degree table according to the conventional manufacturing mapping table, circularly verifying the second degree table according to the improved manufacturing mapping table, obtaining the degree table which passes the circular verification, using the degree table as a final table, and outputting a third analysis result.
In this embodiment, when content related to a requirement is input, for example, 3 sub-requirements are input, the order of the first sub-requirement is 1, the order of the second sub-requirement is 2, the order of the third sub-requirement is 3, and the requirement information of the first sub-requirement: a larger wide bandgap compound semiconductor material; the requirement information of the second sub-requirement is: a semiconductor in schottky barrier contact; the requirement information of the third sub-requirement is: improving the ZT value;
in this embodiment, for example: the input requirement mapping table, the conventional manufacturing mapping table and the improved manufacturing mapping table all comprise: the requirement setting condition is included, and the conventional production mapping table and the improved production mapping table are predetermined.
In this embodiment, the parsing result refers to a result obtained after the requirement is matched, for example:
the input requirement mapping table comprises requirements 11, 12 and 13, the conventional production mapping table comprises requirements 11, 22 and 33, and the improved production mapping table comprises requirements 11, 44 and 55, at this time, because only one matching requirement exists, the input requirement mapping table is regarded as not matching with the conventional production mapping table and the improved production mapping table.
In this embodiment, the instruction is continuously analyzed to provide an intermediate medium for continuous execution in order to continuously execute the subsequent operation.
In this embodiment, the manufacturing judgment criterion is preset, so that when there is no reasonable match, the sub-requirement information is further analyzed to ensure that the semiconductor to be manufactured is finally and effectively determined.
In this embodiment, for example: sub-requirements 11, 12 and 13, 11 and 12 are one type, and 13 is one type, and in this case, 11 and 12 satisfy the above-specified condition, so that the corresponding order is labeled first, which facilitates searching, and the order of 13 is labeled second.
In this embodiment, the requirement format execution standard is also preset, so as to determine the sub-requirements with different formats conveniently, that is, the corresponding sub-requirements assume an execution role played by the semiconductor when it is manufactured, therefore, the possible execution role is determined by determining the execution format of the sub-requirements, and further the possible execution time is determined, and the code of the time is obtained, because the corresponding execution time of the same sub-requirement may be the same or different in the manufacturing process of the conventional semiconductor and the improved semiconductor.
In this embodiment, the first degree table includes a first degree a1 associated with sub-requirement 11, a first degree a2 associated with sub-requirement 12, and a first degree a3 associated with sub-requirement 13, and the second degree table includes a second degree b1 associated with sub-requirement 11, a second degree b2 associated with sub-requirement 12, and a second degree b3 associated with sub-requirement 13.
And circularly verifying the first degree table through the conventional manufacturing mapping table, and circularly verifying the second degree table through the improved manufacturing mapping table, so as to finally determine the table, and reversely deducing whether the conventional manufacturing mapping table or the improved manufacturing mapping table is manufactured through the table.
The beneficial effects of the above technical scheme are: through the primary determination sub-requirements, a table is constructed and matched with the conventional and improved tables to obtain an analytic result, and then effective primary determination is carried out on the manufactured semiconductor, if the determination can be carried out, the execution time is saved, if the determination cannot be carried out, the corresponding time code is judged and obtained through the sub-requirements, and then the subsequent cyclic verification is carried out, the semiconductor which needs to be manufactured at last can be effectively determined, the accuracy of basic judgment of manufacturing is ensured, and the effectiveness of manufacturing is indirectly improved.
Example 5:
based on embodiment 1, step 2 is to obtain a production list, and determine an improved production process according to a structural attribute of each production structure, and includes:
when the input demand mapping table is matched with the improved manufacturing mapping table, the input demand mapping table is regarded as a first mapping table and is input into the process manufacturing model according to the related parameters of the first mapping table to obtain a first process list;
acquiring an initial manufacturing list of an improved manufacturing mapping table, and if the flow execution sequence of the initial manufacturing list is consistent with the execution sequence of the first flow list, determining the flow of the initial manufacturing list as an improved manufacturing flow;
if the execution sequence of the flow of the initial manufacturing list is inconsistent with the execution sequence of the first flow list, determining a first structure set corresponding to the conventional manufacturing condition and a second structure set corresponding to the improved manufacturing condition, and determining an added structure, a deleted structure, an improved structure and an unchanged structure of the second structure set based on the first structure set;
meanwhile, according to the variation attribute of each manufacturing structure, setting a variation label, determining the condition difference between the improved manufacturing condition and the conventional manufacturing condition, and acquiring the factor object of each difference factor corresponding to the condition difference and the object characteristic of each factor object to construct a first difference list;
judging the execution importance of the flows corresponding to the inconsistent execution sequence, constructing a second difference list according to the inconsistent execution sequence, and determining the number of the difference sequences related to the corresponding manufacturing structures in the second difference list;
acquiring the structure attribute of each manufacturing structure in the second structure set, and acquiring the difference attribute of each difference grid in the first difference list;
comparing the structure attribute with the difference attribute to determine difference information corresponding to each manufacturing structure in the second structure set;
setting a difference label to the corresponding manufacturing structure according to the difference information and the number of the difference sequences;
distributing a structure weight to a corresponding manufacturing structure in the second structure set according to the difference label and the change label;
and deploying the manufacturing sequence of each manufacturing structure in the second structure set according to the structure weight and the improved execution standard to obtain an improved manufacturing flow.
In this embodiment, the parameters are related, for example, to include: a larger wide bandgap compound semiconductor material, a schottky barrier contacted semiconductor; the requirement information of the third sub-requirement is included in related parameters such as ZT value and the like.
In this embodiment, the process creation model is trained in advance, the training samples are various parameters, the initial creation list is set in advance and includes various processes, the first process list is obtained by outputting the model and is determined for the creation process, and the subsequent process to be executed is determined by determining the consistency of the sequence of the two processes.
In this embodiment, the first structure set corresponding to the normal manufacturing condition includes 00, 01, 02, 03, and 04, and the second structure set corresponding to the improved manufacturing condition includes: 01. 02, 06, 07, 08, 031, in which case the add structures are 06, 07, 08, the subtract structures are 00, 04, the improve structures are 031 and the unchanged structures are 01, 02.
In this embodiment, the variation attribute is related to addition, deletion, improvement, and non-change, and the variation label is set to better determine the variation of each structure, and the condition difference is predetermined, and since the conventional semiconductor is different from the improved semiconductor, the corresponding conventional and improved conditions are different, and thus the different factor of the different condition is determined, for example, related to the compound semiconductor material and the like.
In this embodiment, an object feature, for example, a feature of a structure that needs to be constructed, is further determined, at this time, the corresponding structure may be regarded as an object, and the difference lattice is a difference attribute determined according to the difference factor and the difference object.
In this embodiment, the first difference list includes: difference factors, difference objects, and a second difference list is comprised of: inconsistent execution order, such as: the initial is: 00. 01, 02 flow, after improvement 00, 02, 01 flow, in the execution 02, 01, structure 1 relates to 01 one sequence, structure 2 relates to 01, 02 two sequences.
In this embodiment, by further comparing the structure attribute with the difference attribute, the difference information of the manufactured structure can be effectively determined, and then the difference tag is set, so as to better distinguish the difference sizes of different structures.
In this embodiment, the structure weight is used to better determine the improvement degree of each manufactured structure, so as to obtain an improved process.
In this embodiment, the improved execution criterion is preset and related to the structure weight, and the larger the corresponding structure weight is, the more the corresponding structure is executed with emphasis.
The beneficial effects of the above technical scheme are: through carrying out the preliminary comparison of flow list, confirm to improve the preparation flow, and through combining the settlement of change label and difference label, can effectively confirm the improvement degree that corresponds a structure, and then make things convenient for follow-up distribution structure weight, and then obtain improving the preparation flow, guarantee the rationality of this flow, improve the semiconductor for the preparation and provide effective foundation of building, indirectly improve and use validity, indirectly improve the thermoelectric conversion efficiency of refrigeration piece.
Example 6:
on the basis of embodiment 1, carry out the in-process that actually detects to the actual manufacture process of second refrigeration piece and second refrigeration piece, include:
monitoring the manufacturing process of each third structure of the second refrigeration sheet, and scanning each external surface of each third structure according to the manufacturing process when each third structure is manufactured to obtain point cloud data of the third structure;
according to the point cloud data, acquiring a plurality of surface images of each third structure, performing pixel analysis on each surface image, and determining concave-convex information of each surface, wherein the concave-convex information comprises: concave-convex position, concave depth and convex height;
determining a face analysis value F of the corresponding face according to the concave-convex information and the face necessary weight ∈ of the corresponding face;
wherein G1 represents the total number of bulges of the corresponding surface, and G2 represents the total number of depressions of the corresponding surface; is a direct change j1 A position weight indicating the position of the j1 st bump of the corresponding surface; is at a position of j2 A position weight indicating the position of the j2 th recess of the corresponding surface; f. of j1 The height of the j1 st projection representing the corresponding face; f. of j2 The depth of the j2 nd depression representing the corresponding face;
analyzing the weight according to the surface roughness of each surface
Screening all the surfaces of the third structure according to the surface analysis value F to obtain a first surface;
based on an optical detection technology, performing defect detection on the first surface to construct defect characteristics, performing first reminding when the defect characteristics belong to non-negligible characteristics, and determining error operation in the manufacturing process according to the supervision result of the first surface;
determining a repair scheme of the defect characteristics based on the faulty operation and the non-negligible characteristics, and simultaneously determining the repair importance degree;
wherein A ≧ B represents the intersection feature between the faulty feature A and the non-negligible feature B corresponding to the faulty operation; AUB represents a union feature between a fault feature A and a non-negligible feature B corresponding to fault operation; y1= Z (A-A ≠ B) denotes that the residual features of the faulty feature A excluding the intersection feature are based on the significance function of the production flow; y2= Z (B-ase:Sub>A ≠ B) represents that the remaining features of the non-negligible feature B excluding the intersection feature are based on the significance function of the production flow; z (A # B) represents an effective function of an intersection characteristic based on a production flow;
a trimming function representing the composition of the intersection feature and union feature ratios; wherein the effective function is related to the presentation position of the corresponding residual feature based on the corresponding third structure and the influence degree of the residual feature based on the corresponding third structure; k represents the importance degree of repair based on the fault operation and the non-negligible characteristics; h1 represents a feature weight of the remaining feature corresponding to Y1; h2 represents a feature weight of the remaining feature corresponding to Y2; h3 represents a feature weight value related to the intersection feature; e (.) represents an exponential function;
and carrying out repair reminding of corresponding levels according to the repair importance degree, and carrying out corresponding repair according to a repair scheme.
In this embodiment, for example, there are a plurality of structures, each of which has several faces, for example, 4 faces, but of the 4 faces, some of the faces are not to be in contact with other structures, some of the faces are to be in contact with other structures, two portions of one of the faces are to be in contact with other structures, and the remaining portions are not to be in contact with other structures, and therefore, it is necessary to determine the necessary weight of the face of each face and the necessary analysis weight of each face, and the weight of the concave-convex position in each face is different but less than 1.
In this embodiment, the depth and the protrusion seriously affect the efficiency of thermoelectric conversion, and therefore, it is necessary to perform effective analysis as an index.
In this embodiment, the first face is selected from all faces and is less than all faces.
In this embodiment, optical inspection techniques, such as laser inspection or the like, determine the defect characteristics of the first surface and when no defect characteristics or faulty operation is present, the corresponding
Z(A∩B)＝0。
In this embodiment, for example,base:Sub>A faulty operation causesbase:Sub>A defective featurebase:Sub>A, but optically detected defective features arebase:Sub>A and B, where Z (base:Sub>A-base:Sub>A ≠ B) =0, Z (B-base:Sub>A = B) =1, and Z (base:Sub>A-base:Sub>A = B) =1, respectively
Z(A∩B)＝0.5。
In this embodiment, the greater the importance of repair, the more frequent the corresponding repair reminders.
The beneficial effects of the above technical scheme are: the method comprises the steps of scanning the surface of each structure in the manufacturing process to obtain point cloud data, analyzing the surface analysis values of different surfaces according to concave-convex information, screening to obtain a first surface, carrying out optical detection on the first surface to determine characteristics, calculating the repair importance degree of faulty operation and corresponding defect characteristics through a formula, obtaining repair reminding of corresponding levels, guaranteeing timely repair, avoiding unqualified semiconductor manufacturing, repairing through a repair scheme, guaranteeing the use validity of manufactured semiconductors, and indirectly guaranteeing the thermoelectric conversion efficiency of refrigerating sheets.
Example 7:
based on embodiment 6, after the manufacturing and the repairing are completed, the second refrigeration sheet is actually detected according to the actual detection index, and a comprehensive detection set W = { W = is constructed i ，i＝1，2，...，s1}；
Wherein w i ＝{w ij ，j＝1，2，...，s2}，w i A detection set representing the ith actual detection index, and s1 representing the number of the actual detection indexes; w is a ij The detection result of the ith actual detection index in the jth detection is shown, and s2 shows the total detection times of the ith actual detection index;
determining current environmental information for actually manufacturing the second refrigeration piece, estimating the pollution condition of the second refrigeration piece according to the current environmental information, integrating a comprehensive detection set W, and determining a qualified value P of the second refrigeration piece;
wherein, beta represents the influence value of the additional potential caused by the pollution condition on the second refrigerating sheet; r is 1 Indicating an allowable maximum cooling condition of the second cooling plate; r is 2 Indicating a minimum allowable refrigeration condition for the second refrigeration pill; delta T represents the simulated refrigeration range difference of the second refrigeration piece; d ij Represents the detection result w of the j detection of the ith actual detection index ij Corresponding standard conversion values;
when the qualified value P is larger than the preset value Y, judging that the second refrigerating sheet is qualified;
otherwise, alarming and reminding are carried out.
In this embodiment, the actual detection indexes, such as the indexes of temperature, non-uniformity of force, oxidation of electric couple, and change of electric heating property, are used to obtain the corresponding detection values, such as electromotive force, and the detection times corresponding to different indexes are the same.
Because the refrigerating sheet can be disturbed by pollution, environmental information needs to be acquired, and the final determination of the qualified value is ensured to be reasonable.
In this embodiment, the preset value Y is preset, and the semiconductor is mainly related to the temperature difference.
In this embodiment, the standard conversion value is performed for better calculation and time saving, and the range of the standard conversion value is 0 to 1.
The beneficial effects of the above technical scheme are: through obtaining actual detection index, and then establish and detect the set, and through combining current environmental information, adjust the qualification value, guarantee to obtain the accuracy of qualification value P, for the qualification of second refrigeration piece judges provides effective basis, guarantees its validity of using, indirectly guarantees the thermoelectric conversion efficiency of refrigeration piece.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (9)
1. An implementation method based on a semiconductor chilling plate is characterized by comprising the following steps:
step 1: acquiring a manufacturing requirement for manufacturing a refrigerating sheet, and analyzing the manufacturing requirement;
and 2, step: judging whether a conventional semiconductor needs to be manufactured or not according to the analysis result, if so, performing simulation modeling according to a conventional manufacturing flow to obtain a conventional refrigerating sheet, and actually manufacturing;
otherwise, acquiring a manufacturing list, wherein the manufacturing list comprises a plurality of manufacturing structures, and determining an improved manufacturing process according to the structural attribute of each manufacturing structure;
and step 3: carrying out simulation construction according to the improved manufacturing process to obtain an improved refrigerating sheet;
and 4, step 4: performing simulation detection on each first structure in the improved refrigerating sheet, obtaining a first refrigerating sheet after the simulation detection is qualified, actually manufacturing the first refrigerating sheet to obtain a second refrigerating sheet, and actually detecting the actual manufacturing process of the second refrigerating sheet and the second refrigerating sheet;
step 2, obtaining a manufacturing list, and determining an improved manufacturing process according to the structural attribute of each manufacturing structure, wherein the method comprises the following steps:
when the input demand mapping table is matched with the improved manufacturing mapping table, the input demand mapping table is regarded as a first mapping table and is input into a process manufacturing model according to related parameters of the first mapping table to obtain a first process list;
acquiring an initial manufacturing list of the improved manufacturing mapping table, and if the execution sequence of the initial manufacturing list is consistent with the execution sequence of the first flow list, determining that the flow of the initial manufacturing list is an improved manufacturing flow;
if the flow execution sequence of the initial manufacturing list is inconsistent with the execution sequence of the first flow list, determining a first structure set corresponding to a conventional manufacturing condition and a second structure set corresponding to an improved manufacturing condition, and determining an added structure, a deleted structure, an improved structure and an unchanged structure of the second structure set based on the first structure set;
meanwhile, according to the variation attribute of each manufacturing structure, setting a variation label, determining the condition difference between the improved manufacturing condition and the conventional manufacturing condition, and acquiring a factor object of each difference factor corresponding to the condition difference and the object characteristic of each factor object to construct a first difference list;
judging the execution importance of the flow corresponding to the inconsistent execution sequence, constructing a second difference list according to the inconsistent execution sequence, and determining the number of the difference sequences related to the corresponding manufacturing structures in the second difference list;
acquiring the structure attribute of each manufacturing structure in the second structure set, and acquiring the difference attribute of each difference grid in the first difference list;
comparing the structure attribute of each manufactured structure in the second structure set with the difference attribute to determine difference information corresponding to each manufactured structure in the second structure set;
setting a difference label to a corresponding manufacturing structure according to the difference information and the number of the difference sequences;
distributing a structure weight to a corresponding manufacturing structure in the second structure set according to the difference label and the change label;
and deploying the manufacturing sequence of each manufacturing structure in the second structure set according to the structure weight and the improved execution standard to obtain an improved manufacturing flow.
2. The semiconductor chilling plate-based implementation method according to claim 1, wherein after parsing the manufacturing requirement, further comprising:
judging the manufacturing conditions met by the manufacturing requirements according to the analysis result, and judging that a conventional refrigerating sheet needs to be constructed when the conventional manufacturing conditions are met;
when the improved manufacturing conditions are met, it is determined that an improved refrigeration pill needs to be constructed.
3. The semiconductor-based refrigeration chip implementation method of claim 2, wherein the improvement of the refrigeration chip comprises:
the semiconductor refrigerating sheet unit comprises a plurality of semiconductor refrigerating sheet units, wherein each refrigerating sheet unit comprises a cold end substrate (1) and a hot end substrate (11);
a cold end conductive plate (2) is arranged on the lower surface of the cold end substrate (1), and a first hot end conductive plate (10) and a second hot end conductive plate (7) are respectively arranged on the upper surface of the hot end substrate (11);
one end of an N-type thermoelectric arm (8) is connected with the cold-end conducting plate (2) through a first Schottky barrier contact layer (3), and the other end of the N-type thermoelectric arm (8) is connected with the first hot-end conducting plate (10) through an ohmic contact layer (9);
one end of the P-type thermoelectric arm (5) is connected with the cold-end conductive plate (2) through a second Schottky barrier contact layer (4), and the other end of the P-type thermoelectric arm (5) is connected with the second hot-end conductive plate (7) through an ohmic contact layer (6).
4. The semiconductor chilling plate-based implementation method according to claim 3, characterized in that the N-type thermoelectric arm (8) and the P-type thermoelectric arm N (5) are composed of a composite of functional materials, and the material selection is related to a compound with a large forbidden band width.
5. A semiconductor chilling plate-based implementation method according to claim 3, characterized in that the schottky barrier connected to the N-type thermoelectric arm (8) is in reverse bias operation and the schottky barrier connected to the P-type thermoelectric arm (5) is in forward bias operation.
6. A semiconductor chilling plate-based implementation method according to claim 5, characterized in that the first Schottky barrier contact layer (3) is formed by depositing metallic nickel on the N-type thermoelectric arm (8) to form a Schottky barrier;
the second Schottky barrier contact layer (4) is formed by depositing metal nickel on the P-type thermoelectric arm (5) to form a Schottky barrier.
7. The method for realizing the semiconductor chilling plate according to claim 1, wherein the step 1 of obtaining the manufacturing requirement for manufacturing the chilling plate and analyzing the manufacturing requirement comprises:
acquiring and counting sub-requirement input orders related to the manufacturing requirement, acquiring sub-requirement information corresponding to each sub-requirement input order, and further constructing an input requirement mapping table;
comparing the input requirement mapping table with a conventional manufacturing mapping table and an improved manufacturing mapping table respectively;
if the input requirement mapping table is matched with the conventional manufacturing mapping table, outputting a first analysis result;
if the input demand mapping table is matched with the improved manufacturing mapping table, outputting a second analysis result;
if the input demand mapping table is not matched with the conventional manufacturing mapping table and is not matched with the improved manufacturing mapping table, outputting a continuous analysis instruction;
based on the continuous analysis instruction, acquiring a manufacturing judgment standard, classifying all the sub-demand information, performing first labeling on the input sequence of the sub-demand information which is larger than the corresponding class preset judgment value in the same type of information, performing second labeling on the rest sequence, acquiring a demand format execution standard, determining the execution format corresponding to each sub-demand information, and establishing the time code of the executable time corresponding to each execution format;
determining the satisfaction degree of the first labeling result, the second labeling result and the time coding result of each piece of sub-requirement information based on the conventional manufacturing condition to construct a first degree table, and simultaneously determining the satisfaction degree of the first labeling result, the second labeling result and the time coding result of each piece of sub-requirement information based on the improved manufacturing condition to construct a second degree table;
and circularly verifying the first degree table according to the conventional manufacturing mapping table, circularly verifying the second degree table according to the improved manufacturing mapping table, obtaining the degree table passing the circular verification, using the degree table as a final table, and outputting a third analysis result.
8. The method for realizing the semiconductor chilling plate according to claim 1, wherein the actual manufacturing process of the second chilling plate and the actual detection process of the second chilling plate include:
monitoring the manufacturing process of each third structure of the second refrigeration piece, and scanning each external surface of each third structure according to the manufacturing process when each third structure is manufactured to obtain point cloud data of the third structure;
according to the point cloud data, acquiring a plurality of surface images of each third structure, performing pixel analysis on each surface image, and determining concave-convex information of each surface, wherein the concave-convex information comprises: concave-convex position, concave depth and convex height;
determining a face analysis value F of the corresponding face according to the concave-convex information and the face necessary weight ∈ of the corresponding face;
wherein G1 represents the total number of bulges of the corresponding surface, and G2 represents the total number of depressions of the corresponding surface; is at a position of j1 A position weight indicating the position of the j1 st bump of the corresponding surface; is a direct change j2 A position weight indicating the position of the jth 2 th recess of the corresponding face; fj1 represents the height of the j1 st projection of the corresponding face; f. of j2 The depth of the j2 nd depression representing the corresponding face;
screening to obtain a first surface from all surfaces of the third structure according to the necessary analysis weight of the surface concave-convex of each surface, 8706and the surface analysis value F;
based on an optical detection technology, performing defect detection on the first surface to construct a defect characteristic, performing first reminding when the defect characteristic belongs to a non-negligible characteristic, and determining error operation in the manufacturing process according to a supervision result of the first surface;
determining a repair scheme of the defect characteristics based on the faulty operation and the non-negligible characteristics, and simultaneously determining the repair importance degree;
wherein A ≧ B represents the intersection characteristic between the faulty characteristic A and the non-negligible characteristic B corresponding to the faulty operation; a ^ B represents fault feature A corresponding to fault operation and union feature between non-ignorable features B; y1= Z (A-A ≠ B)
The residual characteristics of the error characteristics A except the intersection characteristics are based on an effective function of a manufacturing flow; y2= Z (B-ase:Sub>A ≠ B) represents that the remaining features of the non-negligible feature B excluding the intersection feature are based on the significance function of the production flow; z (A # B) represents an effective function of an intersection characteristic based on a production flow;
a trimming function representing the composition of the intersection feature and union feature ratios; wherein the significance function is related to the presentation position of the corresponding residual feature based on the corresponding third structure and the influence degree of the residual feature based on the corresponding third structure; k represents the importance degree of repair based on the faulty operation and the non-negligible characteristic; h1 represents a feature weight of the remaining feature corresponding to Y1; h2 represents a feature weight of the remaining feature corresponding to Y2; h3 represents a feature weight related to the intersection feature; e.g. of the type (.) Representing an exponential function;
and carrying out repair reminding of corresponding levels according to the repair importance degree, and carrying out corresponding repair according to the repair scheme.
9. The semiconductor chilling plate-based implementation method of claim 8, wherein after the manufacturing and repairing are completed, the second chilling plate is actually detected according to an actual detection index, and a comprehensive detection set W = { W } is constructed i , i = 1,2, . . . , s1}；
Wherein, w i = {w ij J =1, 2., s2}, wi denotes a detection set of the ith actual detection index, and s1 denotes the number of the actual detection indexes; w is a ij The detection result of the ith actual detection index in the jth detection is shown, and s2 shows the total detection times of the ith actual detection index;
determining current environmental information for actually manufacturing the second refrigeration piece, estimating the pollution condition of the second refrigeration piece according to the current environmental information, integrating a comprehensive detection set W, and determining a qualified value P of the second refrigeration piece;
wherein β represents an influence value of an additional potential caused by the contamination condition on the second cooling plate; r is 1 Indicating an allowable maximum cooling condition of the second cooling plate; r is 2 Represents a minimum allowable refrigeration condition of the second refrigeration pill; delta T represents the simulated refrigeration range difference of the second refrigeration piece; d ij Represents the detection result w of the j detection of the ith actual detection index ij Corresponding standard conversion values;
when the qualified value P is larger than a preset value Y, judging that the second refrigerating sheet is qualified;
otherwise, alarming and reminding are carried out.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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Non-Patent Citations (2)
| Title |
|---|
| 基于ANSYS Workbench软件的半导体制冷器性能模拟研究;武卫东等;《上海理工大学学报》;20160615;第38卷(第03期);255-262 * |
| 微型热电制冷器的结构参数设计与制备;张翔等;《成都工业学院学报》;20200915;第23卷(第03期);34-38 * |
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