CN101639299A - Refrigeration device - Google Patents
Refrigeration device Download PDFInfo
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- CN101639299A CN101639299A CN200810142220A CN200810142220A CN101639299A CN 101639299 A CN101639299 A CN 101639299A CN 200810142220 A CN200810142220 A CN 200810142220A CN 200810142220 A CN200810142220 A CN 200810142220A CN 101639299 A CN101639299 A CN 101639299A
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Abstract
The invention relates to a refrigeration device. The device comprises a direct current power supply, an 'N' type semiconductor and a 'P' type semiconductor which are connected in series with the direct current power supply, wherein the 'N' type semiconductor and the 'P' type semiconductor are alternately connected in series with each other at intervals; and the dereferencing range of sectional areas of the 'N' type semiconductor and the 'P' type semiconductor is adjusted to be between 0.8096 and 1.4020 square millimeters; and the dereferencing range of the height of the 'N' type semiconductorand the 'P' type semiconductor is adjusted to be between 1.012 and 1.7528millimeters. The device reduces the use of materials, maintains the refrigeration effect to reduce the product cost.
Description
Technical field
The present invention relates to refrigerating field, more particularly, relate to a kind of refrigerating plant that utilizes the semiconductor conduction to produce refrigeration.
Background technology
Be illustrated in figure 1 as existing refrigerating plant schematic diagram, refrigerating plant comprises dc source, power line, cold plate, wherein cold plate comprises some " N " type semiconductor 10 and " P " type semiconductor 12 of connecting with described dc source, connector 13, connector 15 and insulating heat-conductive potsherd, the electric current that dc source produces is by connector 13, connector 15 (copper brace) flows through a plurality of " N " type semiconductor 10 and " P " type semiconductor 12 of cooling piece inside successively with series system, according to Peltier effect: when the loop of direct current by constituting, will present the phenomenon of " heat absorption " or " heat release " on its corresponding node by two kinds of different materials.Among this figure, the sense of current is to circulate to " P " from " N ", and all nodes (i.e. Shang Fang copper brace) of its top all are the N--P nodes, will produce " heat absorption " phenomenon, and all nodes of below (i.e. Xia Fang copper brace) all are the P--N nodes, " heat release " phenomenon will occur.
By among Fig. 1 as can be known, being fixed to top all copper braces 13 on the potsherd 20 all is the node that " heat absorption " phenomenon can occur, be fixed to all copper braces 15 on the potsherd 11 of below and all be can appearance " heat release " phenomenon node.Like this, the plane that potsherd 20 constituted of top is " heat absorption " face, and the plane that potsherd 11 constituted of below is " heat release " face.This " cold ", " heat " face are " copolymerization " on the hot property with respect to the connected mode of inner " heat absorption ", " heat release " node, or are called " parallel connection " on the hot property.
Common thermoelectric module is exactly by the method for attachment by copper brace and insulating heat-conductive potsherd of more " P ", " N " type semiconductor, realizes that " series connection " on its electrical property is connected with " parallel connection " on the hot property to make.
Table 1
Table 2
Shown in Fig. 2 to 4 and table 1, table 2, existing " N " type is all identical cuboid with the semi-conductive profile of " P " type, and be to adopt the bismuth telluride manufacturing to form, the span of its cross-sectional area S and height L is respectively 1.6197 square millimeters to 1.6724 square millimeters and 2.0225 millimeters to 2.0625 millimeters, and its refrigerating efficiency is respectively 11.99% and 13.19%.The price of tellurium and bismuth has skyrocketed tens times in recent years, and the cost of producing this refrigerating plant is constantly risen.
Summary of the invention
The technical problem to be solved in the present invention is, at the above-mentioned of prior art because tellurium and bismuth material price skyrocket defective, provide a kind of and can reduce materials and the constant refrigerating plant of refrigeration performance.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of refrigerating plant, " N " type semiconductor of comprise dc source, connecting and " P " type semiconductor with described dc source, described " N " type semiconductor and the series connection of " P " type semiconductor space, described " N " type semiconductor is the identical cuboid of profile with described " P " type semiconductor.The span of the semi-conductive area of section of described " N " type is 0.8096 square millimeter to 1.4020 square millimeters, and the span of the semi-conductive height of described " N " type is 1.012 millimeters to 1.7528 millimeters.
In refrigerating plant of the present invention, the span of the semi-conductive area of section of described " N " type is 0.8096 square millimeter to 1.1282 square millimeters, and the span of the semi-conductive height of described " N " type is 1.1012 millimeters to 1.4205 millimeters.
In refrigerating plant of the present invention, the semi-conductive area of section of described " N " type is 1.1282mm
2, the semi-conductive height of described " N " type is 1.4205 millimeters.
In refrigerating plant of the present invention, the semi-conductive area of section of described " N " type is 0.8096 square millimeter, and the semi-conductive height of described " N " type is 1.012 millimeters.
In refrigerating plant of the present invention, the semi-conductive area of section of described " N " type is 1.4020 square millimeters, and the semi-conductive height of described " N " type is 1.7528 millimeters.
In refrigerating plant of the present invention, described connector is the copper brace.
In refrigerating plant of the present invention, described " N " type semiconductor or the semi-conductive outer end of described " P " type are provided with the insulating heat-conductive potsherd.
Implement refrigerating plant of the present invention, have following beneficial effect:
Refrigerating plant of the present invention is by being the span of " N " type semiconductor and the semi-conductive area of section of described " P " type 0.8096 square millimeter to 1.4020 square millimeters, and the span of described " N " type semiconductor or the semi-conductive height of " P " type is 1.012 millimeters to 1.7528 millimeters.Reduced the use of material, and refrigeration is constant, product cost is reduced.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the structural representation of prior art and refrigerating plant of the present invention;
Fig. 2 is the front elevational schematic of prior art and cold plate of the present invention;
Fig. 3 is the schematic top plan view of Fig. 2;
Fig. 4 is " P " type semiconductor or the semi-conductive schematic perspective view of " N " type in prior art and the cold plate of the present invention.
The specific embodiment
Be depicted as refrigerating plant of the present invention as Fig. 1 to 4 and table three, table four, " N " type semiconductor 10 and " P " type semiconductor 12 of comprise dc source, connecting with described dc source, described " N " type semiconductor 10 and the series connection of " P " type semiconductor 12 spaces, described " N " type semiconductor 10 is the identical cuboid of profile with described " P " type semiconductor 12.The span of the area of section S of described " N " type semiconductor 10 is 0.8096 square millimeter to 1.4020 square millimeters, and the span of the height L of described " N " type semiconductor 10 is 1.012 millimeters to 1.7528 millimeters.
Wherein, the span of the area of section S of " N " type semiconductor 10 also is 0.8096 square millimeter to 1.1282 square millimeters, and the span of the height L of " N " type semiconductor 10 should be 1.1012 millimeters to 1.4205 millimeters mutually.
By form 3 and table 4, can also obtain following numerical value respectively:
1, in first embodiment, the area of section S of " N " type semiconductor 10 is 1.1282mm
2, and the height L of " N " type semiconductor 10 correspondingly gets 1.4205 millimeters.
2, in a second embodiment, the area of section S of " N " type semiconductor 10 is 0.8096 square millimeter, and the height L of " N " type semiconductor 10 correspondingly gets 1.012 millimeters.
3, in the 3rd embodiment, the area of section S of " N " type semiconductor 10 is 1.4020 square millimeters, and the height L of " N " type semiconductor 10 correspondingly gets 1.7528 millimeters.
Because " P " type semiconductor 12 is identical with volume with the profile of " N " type semiconductor 10, therefore " P " type semiconductor 12 also has above-mentioned value and span.
In addition, connector uses the good copper brace 15 of electric conductivity in the present invention, and in order to insulate and heat conduction, also is provided with the insulating heat-conductive potsherd in " N " type semiconductor 10, the semi-conductive outer end of " P " type respectively.The insulating heat-conductive potsherd comprises and is fixed to top potsherd 20 and is fixed to below potsherd 11.
By form 1 and form 3 more as can be known: the ratio that the consumption of the semi-conducting material that " N " type semiconductor 10 of the cold plate inside of first embodiment, second embodiment, the 3rd embodiment, " P " type semiconductor are used is saved material than first kind of original existing product has reached 53.5%, 28.8%, 76.2% respectively; The ratio that the consumption of the semi-conducting material that the cold plate of first embodiment, second embodiment, the 3rd embodiment is inner used is saved material than second kind of original existing product has reached 50.5%, 24.99%, 7499% respectively.
Table 3
Table 4
By form two and form four more as can be known the average refrigerating efficiency of first embodiment, second embodiment, the 3rd embodiment be respectively 12.17%, 12.49%, 12.16%, the average refrigerating efficiency of product originally is 13.19% and 11.99%, so refrigeration basically identical, therefore can adopt " N " of the present invention type semiconductor 10 and " P " type semiconductor 12 to replace original " N " type semiconductor and " P " type semiconductor 12, when guaranteeing refrigeration, also reduce the use of material, thereby reduced production cost.
Claims (7)
1, a kind of refrigerating plant, " N " type semiconductor of comprise dc source, connecting and " P " type semiconductor with described dc source, described " N " type semiconductor and the series connection of " P " type semiconductor space, described " N " type semiconductor is the identical cuboid of profile with described " P " type semiconductor, it is characterized in that, the span of the semi-conductive area of section of described " N " type is 0.8096 square millimeter to 1.4020 square millimeters, and the span of the semi-conductive height of described " N " type is 1.012 millimeters to 1.7528 millimeters.
2, refrigerating plant according to claim 1, it is characterized in that, the span of the semi-conductive area of section of described " N " type is 0.8096 square millimeter to 1.1282 square millimeters, and the span of the semi-conductive height of described " N " type is 1.1012 millimeters to 1.4205 millimeters.
3, refrigerating plant according to claim 1 and 2 is characterized in that, the semi-conductive area of section of described " N " type is 1.1282mm
2, the semi-conductive height of described " N " type is 1.4205 millimeters.
4, refrigerating plant according to claim 1 and 2 is characterized in that, the semi-conductive area of section of described " N " type is 0.8096 square millimeter, and the semi-conductive height of described " N " type is 1.012 millimeters.
5, refrigerating plant according to claim 1 is characterized in that, the semi-conductive area of section of described " N " type is 1.4020 square millimeters, and the semi-conductive height of described " N " type is 1.7528 millimeters.
According to the described refrigerating plant of the arbitrary claim of claim 5, it is characterized in that 6, described connector is the copper brace.
According to the described refrigerating plant of the arbitrary claim of claim 5, it is characterized in that 7, described " N " type semiconductor, the semi-conductive outer end of described " P " type are provided with the insulating heat-conductive potsherd.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810142220A CN101639299A (en) | 2008-07-31 | 2008-07-31 | Refrigeration device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810142220A CN101639299A (en) | 2008-07-31 | 2008-07-31 | Refrigeration device |
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| CN101639299A true CN101639299A (en) | 2010-02-03 |
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| CN200810142220A Pending CN101639299A (en) | 2008-07-31 | 2008-07-31 | Refrigeration device |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102297544A (en) * | 2011-08-26 | 2011-12-28 | 陈志明 | Semiconductor refrigerating or heating module and production method thereof |
| CN102410657A (en) * | 2011-10-28 | 2012-04-11 | 杭州澳凌制冷设备有限公司 | Semi-conductor refrigeration device |
| CN102524985A (en) * | 2010-12-27 | 2012-07-04 | 北京印刷学院 | Semiconductor temperature control solar thermal garment |
| CN102569285A (en) * | 2010-12-27 | 2012-07-11 | 北京印刷学院 | Solar refrigeration and heating automatic temperature control vacuum glass |
| CN103143454A (en) * | 2013-02-27 | 2013-06-12 | 长沙市鑫奥仪器仪表有限公司 | Ultracentrifuge |
| CN106440483A (en) * | 2016-09-13 | 2017-02-22 | 奈申（上海）智能科技有限公司 | Electric card refrigerating device |
| CN106655386A (en) * | 2016-12-30 | 2017-05-10 | 重庆甸甸橙电子商务有限公司 | Charging bag for mobile courtroom |
| CN106813338A (en) * | 2017-03-24 | 2017-06-09 | 合肥天鹅制冷科技有限公司 | Air-conditioning device |
| CN106814328A (en) * | 2016-12-30 | 2017-06-09 | 重庆甸甸橙电子商务有限公司 | The detection method of mobile court charging bag electricity |
-
2008
- 2008-07-31 CN CN200810142220A patent/CN101639299A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102524985A (en) * | 2010-12-27 | 2012-07-04 | 北京印刷学院 | Semiconductor temperature control solar thermal garment |
| CN102569285A (en) * | 2010-12-27 | 2012-07-11 | 北京印刷学院 | Solar refrigeration and heating automatic temperature control vacuum glass |
| CN102297544A (en) * | 2011-08-26 | 2011-12-28 | 陈志明 | Semiconductor refrigerating or heating module and production method thereof |
| CN102410657A (en) * | 2011-10-28 | 2012-04-11 | 杭州澳凌制冷设备有限公司 | Semi-conductor refrigeration device |
| CN102410657B (en) * | 2011-10-28 | 2013-12-04 | 杭州澳凌制冷设备有限公司 | Semi-conductor refrigeration device |
| CN103143454A (en) * | 2013-02-27 | 2013-06-12 | 长沙市鑫奥仪器仪表有限公司 | Ultracentrifuge |
| CN106440483A (en) * | 2016-09-13 | 2017-02-22 | 奈申（上海）智能科技有限公司 | Electric card refrigerating device |
| CN106655386A (en) * | 2016-12-30 | 2017-05-10 | 重庆甸甸橙电子商务有限公司 | Charging bag for mobile courtroom |
| CN106814328A (en) * | 2016-12-30 | 2017-06-09 | 重庆甸甸橙电子商务有限公司 | The detection method of mobile court charging bag electricity |
| CN106655386B (en) * | 2016-12-30 | 2019-04-30 | 重庆甸甸橙电子商务有限公司 | Mobile court charging packet |
| CN106814328B (en) * | 2016-12-30 | 2019-10-01 | 重庆甸甸橙电子商务有限公司 | The detection method of mobile court's charging packet electricity |
| CN106813338A (en) * | 2017-03-24 | 2017-06-09 | 合肥天鹅制冷科技有限公司 | Air-conditioning device |
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Owner name: ZHUHAI MOBICOOL ELECTRONIC CO., LTD. Free format text: FORMER OWNER: MOBICOOL ELECTRONIC (SHENZHEN) CO., LTD. Effective date: 20110211 |
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Effective date of registration: 20110211 Address after: 519040 Guangdong province Zhuhai city Jinhu district Sanzao Road No. 18 Applicant after: MOBICOOL Electronic (Zhuhai) Co., Ltd. Address before: 518033 Guangdong city of Shenzhen province Futian District Fuhua excellence building room 1402-1404 (1D building) Applicant before: Meigu Electronic (Shenzhen) Co., Ltd. |
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