CN202254474U - Cooling or heating module for semiconductor - Google Patents

Cooling or heating module for semiconductor Download PDF

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Publication number
CN202254474U
CN202254474U CN2011203154624U CN201120315462U CN202254474U CN 202254474 U CN202254474 U CN 202254474U CN 2011203154624 U CN2011203154624 U CN 2011203154624U CN 201120315462 U CN201120315462 U CN 201120315462U CN 202254474 U CN202254474 U CN 202254474U
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CN
China
Prior art keywords
type semiconductor
conductive metal
metal sheet
insulating ceramic
semiconductor
Prior art date
Application number
CN2011203154624U
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Chinese (zh)
Inventor
陈志明
顾伟
Original Assignee
陈志明
顾伟
江苏昱众新材料科技有限公司
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Application filed by 陈志明, 顾伟, 江苏昱众新材料科技有限公司 filed Critical 陈志明
Priority to CN2011203154624U priority Critical patent/CN202254474U/en
Application granted granted Critical
Publication of CN202254474U publication Critical patent/CN202254474U/en

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Abstract

The utility model discloses a cooling or heating module for a semiconductor. In the utility model, the N-type semiconductors and the P-type semiconductors are not in contact, and are arranged between a first insulating ceramic piece and a second insulating ceramic piece at intervals; at least one conductive metal sheet is fixed on the first insulating ceramic piece, whereas, at least two conductive metal sheets are fixed on the second insulating ceramic piece; the amount of the conductive metal sheets fixed on the first insulating ceramic piece is more than that on the second insulating ceramic piece by one; each conductive metal sheet on the first insulating ceramic piece is fixed with one N-type semiconductors and one P-type semiconductor; and the other ends of the N-type semiconductor and the P-type semiconductor fixed on the same conductive metal sheet of the first insulating ceramic piece are respectively connected with different conductive metal sheets on the second insulating ceramic piece. The cooling or heating module has the advantages of high cooling and heating efficiency, simple structure, easiness in manufacturing, stable operation, long service life and the like.

Description

A kind of semiconductor refrigerating or heat module
Technical field
The utility model relates to a kind of semiconductor refrigerating or heats module, belongs to semiconductor refrigerating or heats technical field.
Background technology
Utilize the characteristic of P-type semiconductor and N-type semiconductor to switch on refrigeration or the technology that heats has been widely used in refrigeration or has heated the field.At present; In the prior art; Generally P-type semiconductor and N-type semiconductor are made as one and are used as the semiconductor element that freezes or heat; As application number be 200920112725.4, denomination of invention is for the disclosed a kind of semiconductor refrigerating of Chinese patent document of " semiconductor refrigerating element and semiconductor refrigeration system " or the technical scheme that heats, will be made as cylindricality to the semiconductor cooling module by the galvanic couple that P-type semiconductor and N-type semiconductor are formed exactly, and have through hole in the centre of cylinder; The end that galvanic couple is right is arranged on through hole inside, and the other end that galvanic couple is right is arranged on the outer surface of cylinder.Thisly P-type semiconductor and N-type semiconductor are made as one are used as the semiconductor element that freezes or heat; Mainly exist refrigeration or the low shortcoming of electric energy conversion efficiency when heating; And owing to the radiating effect of P-type semiconductor that is made as one and N-type semiconductor is bad; Be not suitable for very much high-power use, and the P-type semiconductor and the N-type semiconductor that are made as one be easy in use wear out, thus the operating efficiency that has reduced refrigeration more or heated.Therefore, existing employing P-type semiconductor and N-type semiconductor are made as the refrigeration of one or the result of use of the semiconductor element that heats still is not ideal enough.
Summary of the invention
The purpose of the utility model is: provide a kind of when freezing or heating operating efficiency higher, energy-conservation and be suitable for high power work and simple in structure, make and be easy to semiconductor refrigerating or heat module, to overcome the deficiency of prior art.
The utility model is achieved in that a kind of semiconductor refrigerating of the utility model or heats module: this module comprises N-type semiconductor and P-type semiconductor; Each N-type semiconductor and P-type semiconductor all respectively the compartment of terrain, be not arranged in contact between first insulating ceramic film and second insulating ceramic film; On first insulating ceramic film, be fixed with at least 1 conductive metal sheet; On second insulating ceramic film, be fixed with at least 2 conductive metal sheets; And the conductive metal sheet that is fixed on second insulating ceramic film is Duoed 1 than the conductive metal sheet that is fixed on first insulating ceramic film; On every conductive metal sheet on first insulating ceramic film, all be fixedly connected with 1 N-type semiconductor and 1 P-type semiconductor, and the N-type semiconductor and the other end of P-type semiconductor that are fixed on first insulating ceramic film on the same conductive metal sheet are separately fixed on the different conductive metal sheet on second insulating ceramic film; The link that is connected with the both positive and negative polarity of dc source is separately positioned on the conductive metal sheet on second insulating ceramic film.
Above-mentioned with conductive metal sheet that the both positive and negative polarity of dc source is connected between be arranged with the semiconductor array that 1~1000 row is made up of N-type semiconductor and P-type semiconductor; Every row's the N-type semiconductor or the quantity of P-type semiconductor are no more than 1000, and the quantity of every row's N-type semiconductor and P-type semiconductor is identical; Every row's each N-type semiconductor and P-type semiconductor are connected between the conductive metal sheet that is connected with the both positive and negative polarity of dc source through the conductive metal sheet on first insulating ceramic film and second insulating ceramic film respectively end to end each other.
The quantity of the conductive metal sheet of said fixing on first insulating ceramic film or second insulating ceramic film is more than or equal to 2 o'clock, every conductive metal sheet all mutually insulated, do not contact mutually.
The above-mentioned semiconductor that is connected on the conductive metal sheet that connects with the positive pole of dc source is different with the semiconductor on being connected the conductive metal sheet that is connected with the negative pole of dc source; When promptly the semiconductor on being connected the conductive metal sheet that is connected with the positive pole of dc source was N-type semiconductor, the semiconductor that is connected on the conductive metal sheet that is connected with the negative pole of dc source was a P-type semiconductor; When the semiconductor on being connected the conductive metal sheet that is connected with the positive pole of dc source was P-type semiconductor, the semiconductor that is connected on the conductive metal sheet that is connected with the negative pole of dc source was a N-type semiconductor.
Being shaped as rectangle column structure, cylindrical column structure or interconnecting the column structure of forming (the device contour structures of promptly using a sand filter for marking the hours) by double cone body top of N-type semiconductor or P-type semiconductor.
Owing to adopted technique scheme; The utility model with N-type semiconductor and P-type semiconductor as independently freezing or heating element; And with each N-type semiconductor and P-type semiconductor respectively the compartment of terrain, be not arranged between first insulating ceramic film and second insulating ceramic film with being in contact with one another; Because each N-type semiconductor or P-type semiconductor are not in contact with one another; And all N-type semiconductors and P-type semiconductor all are that the syndeton by matrix form is arranged between first insulating ceramic film and second insulating ceramic film; Therefore improved the radiating condition of each semiconductor element widely, each N-type semiconductor or P-type semiconductor can not produced influence each other, and heat or cold all concentrating on respectively on first insulating ceramic film or second insulating ceramic film that each N-type semiconductor or P-type semiconductor are changed; Thereby the refrigeration or the heating efficiency of each semiconductor element have been improved effectively; Reduced power consumption, and can produce the large-power semiconductor refrigeration easily and reliably or heat module according to the needs that use.When using the utility model; When power supply is connected to the semiconductor refrigerating of the utility model or heats on the power connector end on the module; On first insulating ceramic film, refrigeration end will occur, end on second insulating ceramic film, will occur heating, if the polarity of the power supply on the link is exchanged; End then on first insulating ceramic film, will occur heating, on second insulating ceramic film, refrigeration end will occur.So; The utility model compared with prior art; The utility model not only has refrigeration or heating efficiency is high, energy-saving advantages, is suitable for making high power module and simple in structure, advantages such as making is easy, stable work in work, long service life but also have.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Fig. 2 for the N-type semiconductor of the utility model or P-type semiconductor be shaped as the rectangle column structure time sketch map;
The sketch map of Fig. 3 during for the cylindrical column structure of being shaped as of the N-type semiconductor of the utility model or P-type semiconductor;
Sketch map when Fig. 4 interconnects the column structure of forming (the device contour structures of promptly using a sand filter for marking the hours) for being shaped as of the N-type semiconductor of the utility model or P-type semiconductor by double cone body top.
Description of reference numerals: 1-first insulating ceramic film, 2-second insulating ceramic film, 3-conductive metal sheet, 4-N type semiconductor, 5-P type semiconductor, E-dc source.
The specific embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is done further to say in detail.
The embodiment of the utility model: adopting existing N-type semiconductor and P-type semiconductor as freezing or when heating element; The utility model is made according to following method; This method be with each N-type semiconductor and P-type semiconductor respectively the compartment of terrain, be not arranged between first insulating ceramic film and second insulating ceramic film with being in contact with one another; Fixing at least 1 conductive metal sheet on first insulating ceramic film; Fixing at least 2 conductive metal sheets on second insulating ceramic film; The conductive metal sheet that promptly is fixed on second insulating ceramic film is Duoed 1 than the conductive metal sheet that is fixed on first insulating ceramic film; Conductive metal sheet can adopt copper sheet, aluminium flake, iron plate or any sheet metal with electric conductivity, can adopt traditional adhering method that conductive metal sheet is bonded on first insulating ceramic film and second insulating ceramic film; All fixing 1 N-type semiconductor and 1 P-type semiconductor on the every conductive metal sheet on first insulating ceramic film; And N-type semiconductor and the other end of P-type semiconductor that will be fixed on first insulating ceramic film on the same conductive metal sheet are separately fixed on the different conductive metal sheet on second insulating ceramic film; And make the N-type semiconductor that is fixed on the conductive metal sheet can be connected energising through conductive metal sheet with P-type semiconductor; When being separately fixed at N-type semiconductor and P-type semiconductor on the conductive metal sheet; Can adopt traditional sintering process or adopt traditional electrically conducting adhesive that N-type semiconductor or P-type semiconductor are separately fixed on the conductive metal sheet, will be separately positioned on the link that the both positive and negative polarity of dc source is connected on the conductive metal sheet on second insulating ceramic film.
A kind of semiconductor refrigerating of the utility model of making according to the method described above or heat module and be: the structural representation of this module is as shown in Figure 1; This module comprises existing N-type semiconductor 4 of employing and P-type semiconductor 5; Can the shape of N-type semiconductor 4 or P-type semiconductor 5 be made into rectangle column structure, cylindrical column structure or be made into by double cone body top and interconnect the column structure of forming (being the common device contour structures of using a sand filter for marking the hours), the shape of these 3 kinds of structures is respectively like Fig. 2~shown in Figure 4.During making; With each N-type semiconductor 4 and P-type semiconductor 5 all respectively the compartment of terrain, be not arranged in contact between first insulating ceramic film 1 and second insulating ceramic film 2; Fixing at least 1 conductive metal sheet 3 on first insulating ceramic film 1; On second insulating ceramic film 2, be fixed with at least 2 conductive metal sheets 3; Make the conductive metal sheet 3 that is fixed on second insulating ceramic film 2 than more than 31 of conductive metal sheets that are fixed on first insulating ceramic film 1; On the every conductive metal sheet 3 on first insulating ceramic film 1, all connect fixing 1 N-type semiconductor 4 and 1 P-type semiconductor 5, and N-type semiconductor 4 and the other end of P-type semiconductor 5 that will be fixed on first insulating ceramic film 1 on the same conductive metal sheet 3 are separately fixed on the different conductive metal sheet 3 on second insulating ceramic film 2; The link that will be connected with the both positive and negative polarity of dc source E simultaneously is separately positioned on the conductive metal sheet 3 on second insulating ceramic film 2; During making; Under normal conditions; Arrange the semiconductor array that 1~1000 row is made up of N-type semiconductor 4 and P-type semiconductor 5 between the conductive metal sheet 3 that can be connected at both positive and negative polarity with dc source E; The quantity of every row's N-type semiconductor 4 or P-type semiconductor 5 is controlled at is no more than 1000 scope, and make every row's N-type semiconductor 4 identical with the quantity of P-type semiconductor 5; Each N-type semiconductor 4 and P-type semiconductor 5 with every row is connected between the conductive metal sheet 3 that is connected with the both positive and negative polarity of dc source E through the conductive metal sheet 3 on first insulating ceramic film 1 and second insulating ceramic film 2 respectively each other by end to end mode simultaneously; During making, the quantity of the conductive metal sheet 3 on being fixed on first insulating ceramic film 1 or second insulating ceramic film 2 more than or equal to 2 the time, should make every conductive metal sheet 3 all mutually insulated, do not contact mutually; During making; Should the semiconductor that be connected on the conductive metal sheet 3 that connects with the positive pole of dc source E is different with the semiconductor on being connected the conductive metal sheet 3 that is connected with the negative pole of dc source E; When promptly the semiconductor on being connected the conductive metal sheet 3 that is connected with the positive pole of dc source E was N-type semiconductor 4, should make the semiconductor that is connected on the conductive metal sheet 3 that is connected with the negative pole of dc source E was P-type semiconductor 5; And the semiconductor on being connected the conductive metal sheet 3 that is connected with the positive pole of dc source E is when being P-type semiconductor 5, is N-type semiconductor 4 and will be connected semiconductor on the conductive metal sheet 3 that is connected with the negative pole of dc source E.

Claims (5)

1. a semiconductor refrigerating or heat module; Comprise N-type semiconductor (4) and P-type semiconductor (5); It is characterized in that: each N-type semiconductor (4) and P-type semiconductor (5) all respectively the compartment of terrain, be not arranged in contact between first insulating ceramic film (1) and second insulating ceramic film (2); On first insulating ceramic film (1), be fixed with at least 1 conductive metal sheet (3); On second insulating ceramic film (2), be fixed with at least 2 conductive metal sheets (3); And the conductive metal sheet (3) that is fixed on second insulating ceramic film (2) is Duoed 1 than the conductive metal sheet (3) that is fixed on first insulating ceramic film (1); On the every conductive metal sheet (3) on first insulating ceramic film (1), all be fixedly connected with 1 N-type semiconductor (4) and 1 P-type semiconductor (5), and the N-type semiconductor (4) and the other end of P-type semiconductor (5) that are fixed on the last same conductive metal sheet of first insulating ceramic film (1) (3) are separately fixed on the different conductive metal sheet (3) on second insulating ceramic film (2); The link that is connected with the both positive and negative polarity of dc source (E) is separately positioned on the conductive metal sheet (3) on second insulating ceramic film (2).
2. semiconductor refrigerating according to claim 1 or heat module; It is characterized in that: between the conductive metal sheet (3) that the both positive and negative polarity with dc source (E) is connected, be arranged with the semiconductor array that 1~1000 row is made up of N-type semiconductor (4) and P-type semiconductor (5); The quantity of every row's N-type semiconductor (4) or P-type semiconductor (5) is no more than 1000, and every row's N-type semiconductor (4) is identical with the quantity of P-type semiconductor (5); Every row's each N-type semiconductor (4) and P-type semiconductor (5) are connected between the conductive metal sheet (3) that is connected with the both positive and negative polarity of dc source (E) through the conductive metal sheet (3) on first insulating ceramic film (1) and second insulating ceramic film (2) respectively end to end each other.
3. semiconductor refrigerating according to claim 1 and 2 or heat module; It is characterized in that: the quantity that is fixed on the conductive metal sheet (3) on first insulating ceramic film (1) or second insulating ceramic film (2) is more than or equal to 2 o'clock, every conductive metal sheet (3) all mutually insulated, do not contact mutually.
4. semiconductor refrigerating according to claim 1 and 2 or heat the preparation method of module; It is characterized in that: the semiconductor that is connected on the conductive metal sheet (3) that connects with the positive pole of dc source (E) is different with the semiconductor on being connected the conductive metal sheet (3) that is connected with the negative pole of dc source (E); When promptly the semiconductor on being connected the conductive metal sheet (3) that is connected with the positive pole of dc source (E) was N-type semiconductor (4), the semiconductor that is connected on the conductive metal sheet (3) that is connected with the negative pole of dc source (E) was P-type semiconductor (5); When the semiconductor on being connected the conductive metal sheet (3) that is connected with the positive pole of dc source (E) was P-type semiconductor (5), the semiconductor that is connected on the conductive metal sheet (3) that is connected with the negative pole of dc source (E) was N-type semiconductor (4).
5. semiconductor refrigerating according to claim 1 and 2 or heat module is characterized in that: being shaped as rectangle column structure, cylindrical column structure or interconnecting the column structure of forming by double cone body top of N-type semiconductor (4) or P-type semiconductor (5).
CN2011203154624U 2011-08-26 2011-08-26 Cooling or heating module for semiconductor CN202254474U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011203154624U CN202254474U (en) 2011-08-26 2011-08-26 Cooling or heating module for semiconductor

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Application Number Priority Date Filing Date Title
CN2011203154624U CN202254474U (en) 2011-08-26 2011-08-26 Cooling or heating module for semiconductor

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102901266A (en) * 2012-09-28 2013-01-30 杭州电子科技大学 Flexible magnetic strip attached type semiconductor refrigeration device
CN102901265A (en) * 2012-09-28 2013-01-30 杭州电子科技大学 Adsorption device for semiconductor refrigeration
CN105913867A (en) * 2016-03-31 2016-08-31 联想(北京)有限公司 Adjustment device and electronic equipment
CN109068476A (en) * 2018-09-10 2018-12-21 广州高雅电器有限公司 A kind of V-CUT excision forming circuit board
CN111266450A (en) * 2020-02-17 2020-06-12 王成科 Non-mould multi-point forming mould for forming computer mainboard

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102901266A (en) * 2012-09-28 2013-01-30 杭州电子科技大学 Flexible magnetic strip attached type semiconductor refrigeration device
CN102901265A (en) * 2012-09-28 2013-01-30 杭州电子科技大学 Adsorption device for semiconductor refrigeration
CN105913867A (en) * 2016-03-31 2016-08-31 联想(北京)有限公司 Adjustment device and electronic equipment
CN105913867B (en) * 2016-03-31 2019-06-25 联想(北京)有限公司 A kind of adjustment device and electronic equipment
CN109068476A (en) * 2018-09-10 2018-12-21 广州高雅电器有限公司 A kind of V-CUT excision forming circuit board
CN109068476B (en) * 2018-09-10 2020-10-13 江西鸿宇电路科技有限公司 V-CUT cutting and forming circuit board
CN111266450A (en) * 2020-02-17 2020-06-12 王成科 Non-mould multi-point forming mould for forming computer mainboard

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Date Code Title Description
GR01 Patent grant
C14 Grant of patent or utility model
EE01 Entry into force of recordation of patent licensing contract

Assignee: Zhaoze Technology (Shanghai) Co., Ltd.

Assignor: Jiangsu Yuzhong New Material Technology Co., Ltd.|Gu Wei|Chen Zhiming

Contract record no.: 2018310000031

Denomination of utility model: Semiconductor refrigerating or heating module and production method thereof

Granted publication date: 20120530

License type: Exclusive License

Record date: 20180712

EE01 Entry into force of recordation of patent licensing contract
EC01 Cancellation of recordation of patent licensing contract

Assignee: Zhaoze Technology (Shanghai) Co., Ltd.

Assignor: Jiangsu Yuzhong New Material Technology Co., Ltd.|Gu Wei|Chen Zhiming

Contract record no.: 2018310000031

Date of cancellation: 20181221

EC01 Cancellation of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Assignee: Neutron Energy Technology Co., Ltd.

Assignor: Jiangsu Yuzhong New Material Technology Co., Ltd.|Gu Wei|Chen Zhiming

Contract record no.: 2018310000066

Denomination of utility model: Semiconductor refrigerating or heating module and production method thereof

Granted publication date: 20120530

License type: Exclusive License

Record date: 20181226

EE01 Entry into force of recordation of patent licensing contract