CN201269666Y - Semiconductor refrigerator - Google Patents
Semiconductor refrigerator Download PDFInfo
- Publication number
- CN201269666Y CN201269666Y CNU2008202001051U CN200820200105U CN201269666Y CN 201269666 Y CN201269666 Y CN 201269666Y CN U2008202001051 U CNU2008202001051 U CN U2008202001051U CN 200820200105 U CN200820200105 U CN 200820200105U CN 201269666 Y CN201269666 Y CN 201269666Y
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- CN
- China
- Prior art keywords
- flow deflector
- semiconductor elements
- type thermoelectric
- outside
- radiating piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a semiconductor cryostat, comprising a thermopile, a radiating piece and a cold conducting piece, as well as comprising an insulating locating piece with regard to the design key point. The insulating locating piece is provided with a plurality of mounting holes used for fixing P type thermoelectric semiconductor elements and N type thermoelectric semiconductor elements on the thermopile and is a strip-shaped platy carbon fiber plate. The utility model aims at providing a semiconductor cryostat, which has convenient installation and low manufacture cost, and can firmly install the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements on the thermopile.
Description
[technical field]
The utility model relates to a kind of semiconductor cooler.
[background technology]
The thermoelectric semiconductor device is that the paltie effect that produces when utilizing DC current to pass through the semi-conducting material PN junction produces refrigeration or the thermal effect device according to the sense of current.
The elementary cell of industrial typical thermoelectric semiconductor device is a pair of thermocouple at present, and behind the connection dc source DC, flow deflector and following flow deflector place will produce temperature difference and transfer of heat on thermocouple.Because the heat exchange amount of a pair of semiconductor thermocouple is very little, usually all with some semiconductor thermocouple is together in series on circuit, the thermoelectric pile that forms heat conduction parallel-connection structure between ceramic radiating insulating substrate of making and the conduction cooling insulated substrate is all arranged and be fixed on to all thermocouples.Because radiating insulating substrate and conduction cooling insulated substrate all adopt potsherd, and have following shortcoming with potsherd as the thermocouple fixing base: at first thermocouple is fixedly connected on potsherd one side inconvenience, thermocouple easily comes off from potsherd; Secondly potsherd production cost height is broken easily, is not easy to install, transportation, adopts the practical effect of potsherd substrate undesirable, is not easy to advancing of product and one does not promote the use of.
[utility model content]
The utility model has overcome above-mentioned technical deficiency, provides each P type thermoelectric semiconductor elements and N type thermoelectric semiconductor elements on the thermoelectric pile, easy for installation and a kind of semiconductor cooler that production cost is low can firmly be installed.
For achieving the above object, the utility model has adopted following technical proposal:
A kind of semiconductor cooler, include thermoelectric pile, radiating piece and conduction cooling spare, it is characterized in that also including the insulation keeper, described insulation keeper is provided with a plurality of installing holes that are used for fixing P type thermoelectric semiconductor elements and N type thermoelectric semiconductor elements on the thermoelectric pile;
The fine plate of the carbon that described insulation keeper is the sheet strip, described installing hole is linear array on the fine plate of carbon, and described P type thermoelectric semiconductor elements and N type thermoelectric semiconductor elements are arranged in above-mentioned each installing hole interlacedly;
Described installing hole is a through hole, and described P type thermoelectric semiconductor elements and N type thermoelectric semiconductor elements both ends are all stretched out outside the through hole;
Fit with described radiating piece in the last flow deflector outside on the described thermoelectric pile, last flow deflector outside conducting surface is provided with one deck diamond-film-like at least; Fit with described conduction cooling spare in the following flow deflector outside on the thermoelectric pile, following flow deflector outside conducting surface also is provided with one deck diamond-film-like at least.
Except that said structure, described radiating piece and conduction cooling spare can also adopt aluminium matter, fit with the radiating piece of described aluminium matter in the last flow deflector outside on the described thermoelectric pile, radiating piece and last flow deflector contact jaw are provided with utmost point oxide layer, fit with the conduction cooling spare of aluminium matter in the following flow deflector outside on the described thermoelectric pile, conduction cooling spare is provided with anodic oxide coating with following flow deflector contact jaw.
The beneficial effects of the utility model are:
1, the insulation keeper is provided with a plurality of through holes that are linear array, and P-type semiconductor and N-type semiconductor are arranged in above-mentioned each through hole interlacedly, and whole mechanism is simple, and is easy to use;
2, the insulation keeper is the fine plate of carbon of sheet strip, the fine plate light weight of carbon, the cost of material is low, process also very convenient, thereby the substrate of the fine plate replacement of carbon potsherd system is convenient to extensively promote the use of industrial;
3, last flow deflector or on flow deflector and the following flow deflector conducting surface coating diamond-like film that powers on substitute existing potsherd or on the radiating piece of aluminium matter and conduction cooling spare conducting surface, be respectively equipped with the anodic oxide coating of insulation, heat conduction, thereby avoid on electric heating heap between the flow deflector and radiating piece, use potsherd between flow deflector and the conduction cooling spare down, saved material, reduced production cost, improved hot and cold conducting effect, cooling effect improves.
[description of drawings]
Be described in further detail below in conjunction with accompanying drawing and embodiment of the present utility model:
Fig. 1 is the utility model embodiment one structural representation;
Fig. 2 is the utility model embodiment two structural representations;
Fig. 3 cuts open structural representation for insulation keeper master.
[specific embodiment]
As shown in the figure, a kind of semiconductor cooler includes thermoelectric pile 1, radiating piece 2, conduction cooling spare 3 and insulation keeper 7.Wherein, the elementary cell of thermoelectric pile 1 is a P type thermoelectric semiconductor elements 15 and N type thermoelectric semiconductor elements 16 is used flow deflector 11 and following flow deflector 12 is coupled to a pair of thermocouple, after thermoelectric pile 1 is connected dc source, will produce temperature difference and transfer of heat at last flow deflector 11 and following flow deflector 12 places.In the utility model,, be called cold junction in flow deflector 12 places temperature decline and heat absorption down; Rise and heat release in last flow deflector 11 place's temperature, be called the hot junction.Because the copper sheet conductive performance is better, last flow deflector 11 and following flow deflector 12 are the copper sheet manufacturing.
Embodiment one as shown in Figure 1, and last flow deflector 11 outsides on the thermoelectric pile 1 and radiating piece 2 are fitted, and last flow deflector 11 is provided with one deck diamond-film-like 4 at least with radiating piece 2 contacted outside conducting surfaces; Following flow deflector 12 outsides on the thermoelectric pile 1 and conduction cooling spare 3 are fitted, and following flow deflector 12 also is provided with one deck diamond-film-like 4 at least with the outside conducting surface that conduction cooling spare 3 is fitted.Diamond-film-like 4 is electroplated on last flow deflector 11 and following flow deflector 12 outside conducting surfaces.The side that radiating piece 2 is gone up flow deflector 11 relatively is provided with regularly arranged a plurality of fin 210; Described relatively down flow deflector 12 1 sides of conduction cooling spare 3 are provided with a plurality of conductive sheet 310 that are used to increase with the air contact-making surface.
Embodiment two as shown in Figure 2, radiating piece 2 and conduction cooling spare 3 are aluminium matter, fit in last flow deflector 11 outsides on the thermoelectric pile 1 and radiating piece 2 lower surfaces, radiating piece 2 lower ends are provided with anodic oxide coating 211, go up flow deflector 11 1 sides on the radiating piece 2 relatively and are provided with regularly arranged a plurality of fin 210; Fit in following flow deflector 12 outsides on the thermoelectric pile 1 and conduction cooling spare 3 upper surfaces, conduction cooling spare 3 upper ends are provided with anodic oxide coating 311, descend flow deflector 12 1 sides to be provided with to be used to a plurality of conductive sheet 310 that increase with the air contact-making surface on the conduction cooling spare 3 relatively.
Claims (5)
1, a kind of semiconductor cooler, include thermoelectric pile (1), radiating piece (2) and conduction cooling spare (3), it is characterized in that also including insulation keeper (7), described insulation keeper (7) is provided with and is used for fixing a plurality of installing holes (71) that thermoelectric pile (1) is gone up P type thermoelectric semiconductor elements (15) and N type thermoelectric semiconductor elements (16).
2, a kind of semiconductor cooler according to claim 1, it is characterized in that described insulation keeper (7) is the fine plate of the carbon of sheet strip, described installing hole (71) is linear array on the fine plate of carbon, described P type thermoelectric semiconductor elements (15) and N type thermoelectric semiconductor elements (16) are arranged in above-mentioned each installing hole (71) interlacedly.
3, a kind of semiconductor cooler according to claim 1 and 2 is characterized in that described installing hole (71) is a through hole, and all stretch out outside the through hole at described P type thermoelectric semiconductor elements (15) and N type thermoelectric semiconductor elements (16) both ends.
4, a kind of semiconductor cooler according to claim 1 is characterized in that fitting with described radiating piece (2) in last flow deflector (11) outside on the described thermoelectric pile (1), and last flow deflector (11) outside conducting surface is provided with one deck diamond-film-like (4) at least; Fit with described conduction cooling spare (3) in following flow deflector (12) outside on the thermoelectric pile (1), following flow deflector (12) outside conducting surface also is provided with one deck diamond-film-like (4) at least.
5, a kind of semiconductor cooler according to claim 1, it is characterized in that described radiating piece (2) and conduction cooling spare (3) are aluminium matter, fit with described radiating piece (2) in last flow deflector (11) outside on the described thermoelectric pile (1), radiating piece (2) is provided with utmost point oxide layer (211) with last flow deflector (11) contact jaw, fit with described conduction cooling spare (3) in following flow deflector (12) outside on the described thermoelectric pile (1), conduction cooling spare (3) is provided with anodic oxide coating (311) with following flow deflector (12) contact jaw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202001051U CN201269666Y (en) | 2008-09-02 | 2008-09-02 | Semiconductor refrigerator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202001051U CN201269666Y (en) | 2008-09-02 | 2008-09-02 | Semiconductor refrigerator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201269666Y true CN201269666Y (en) | 2009-07-08 |
Family
ID=40842271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008202001051U Expired - Fee Related CN201269666Y (en) | 2008-09-02 | 2008-09-02 | Semiconductor refrigerator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201269666Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105125022A (en) * | 2015-09-02 | 2015-12-09 | 京东方科技集团股份有限公司 | Water cup |
| CN107744282A (en) * | 2017-11-14 | 2018-03-02 | 江门市润生机电有限公司 | The cold-hot water mattress cabinet and cold-hot water mattress of a kind of low noise |
| CN115164445A (en) * | 2022-07-15 | 2022-10-11 | 中国电子科技集团公司第十研究所 | Semiconductor thermoelectric refrigerator structure and enhanced heat exchange method |
-
2008
- 2008-09-02 CN CNU2008202001051U patent/CN201269666Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105125022A (en) * | 2015-09-02 | 2015-12-09 | 京东方科技集团股份有限公司 | Water cup |
| CN107744282A (en) * | 2017-11-14 | 2018-03-02 | 江门市润生机电有限公司 | The cold-hot water mattress cabinet and cold-hot water mattress of a kind of low noise |
| CN115164445A (en) * | 2022-07-15 | 2022-10-11 | 中国电子科技集团公司第十研究所 | Semiconductor thermoelectric refrigerator structure and enhanced heat exchange method |
| CN115164445B (en) * | 2022-07-15 | 2023-10-24 | 中国电子科技集团公司第十研究所 | Semiconductor thermoelectric refrigerator structure and enhanced heat exchange method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090708 Termination date: 20110902 |