CN2932237Y - Semiconductor thermoelectricity cooled heat pump - Google Patents

Semiconductor thermoelectricity cooled heat pump Download PDF

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Publication number
CN2932237Y
CN2932237Y CN 200620034810 CN200620034810U CN2932237Y CN 2932237 Y CN2932237 Y CN 2932237Y CN 200620034810 CN200620034810 CN 200620034810 CN 200620034810 U CN200620034810 U CN 200620034810U CN 2932237 Y CN2932237 Y CN 2932237Y
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CN
China
Prior art keywords
cold
flow deflector
metal flow
radiator
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200620034810
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Chinese (zh)
Inventor
韩长久
张小梅
江峰
韩丽
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Individual
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Individual
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Priority to CN 200620034810 priority Critical patent/CN2932237Y/en
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Publication of CN2932237Y publication Critical patent/CN2932237Y/en
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Expired - Fee Related legal-status Critical Current

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Abstract

The utility model provides a semi-conductor thermoelectric cold and hot pump, which comprises a heat absorber, a radiator, several metallic deflectors arranged between the heat absorber and the radiator and the couples connected in parallel with the metallic deflectors, the utility model is characterized in that a cold and hot grease layer compounded with the heat absorber is provided between the heat absorber and the relative metallic deflectors, and an insulating conducting layer is connected with both the cold and hot grease layer and the metallic deflectors. The utility model has the advantages of easy configuration, high percent of pass, easy maintenance, good thermal shrinkage and cold expanding effect for adjustment between elements and long life time.

Description

The cold and hot pump of semiconductor temperature difference electricity
Technical field:
The utility model is relevant with the cold and hot pump of semiconductor temperature difference electricity.
Background technology:
The cold and hot pump of existing semiconductor temperature difference electricity is by heat dump, and radiator is positioned at the number of metal flow deflector between heat dump and radiator, with the compositions such as galvanic couple of metal flow deflector serial connection.The cold and hot pump difficult forming of this electricity, qualification rate is low, is unfavorable for maintenance, and being unfavorable for regulating each needs expanding with heat and contract with cold between parts, and service life is short, is unfavorable for that the extensive exploitation of the cold and hot pump of large-scale thermoelectric is used.
The utility model content:
The purpose of this utility model is in order to overcome above deficiency, to provide a kind of moulding easy, the qualification rate height, for ease of maintenaince, regulate between each parts expand with heat and contract with cold effective, the cold and hot pump of semiconductor temperature difference electricity of long service life.
The purpose of this utility model is achieved like this:
The cold and hot pump of the utility model semiconductor temperature difference electricity, comprise heat dump, radiator, be positioned at the number of metal flow deflector between heat dump and radiator, galvanic couple with metal flow deflector serial connection, it is characterized in that between heat dump and relative metal flow deflector the cold and hot fat layer compound with heat dump being arranged, with the insulated conductive layer that cold and hot fat layer is connected with the metal flow deflector, the quantity of galvanic couple, metal flow deflector depends on the needs, and can be respectively dozens of or over one hundred etc.
Between above-mentioned insulated conductive layer and metal flow deflector, between radiator and corresponding metal flow deflector the low-temperature sintering conducting shell is arranged respectively, be connected firmly, prolong the service life of product.
Connect dc source, the utility model work, absorbing and cooling temperature.
The utility model has adopted cold and hot fat layer, and moulding is easy, the qualification rate height, for ease of maintenaince.Conductive performance is good, and the effect of expanding with heat and contract with cold of regulating between parts is good, long service life, and the extensive exploitation that is beneficial to the cold and hot pump of large-scale thermoelectric is especially used.
Description of drawings:
Fig. 1 is the utility model structural representation.
The specific embodiment:
Referring to Fig. 1, heat dump 1 has the number of metal flow deflector 4 that is connected in series by some galvanic couples 3 with 2 in radiator.The cold and hot fat layer 5 compound with heat dump arranged between heat dump and metal flow deflector, and the insulated conductive layer compound with cold and hot fat layer---porcelain plate 6 (also available insulator-metal board) is with porcelain plate and the low sintering low-temperature sintering conducting shell 7 of metal flow deflector.Have between radiator and metal flow deflector and the low sintering low-temperature sintering conducting shell 8 of the two process.

Claims (2)

1, the cold and hot pump of semiconductor temperature difference electricity, comprise heat dump, radiator, be positioned at the number of metal flow deflector between heat dump and radiator, galvanic couple with metal flow deflector serial connection, it is characterized in that between heat dump and relative metal flow deflector the cold and hot fat layer compound with heat dump being arranged, the insulated conductive layer that is connected with the metal flow deflector with cold and hot fat layer.
2, the cold and hot pump of semiconductor temperature difference as claimed in claim 1 electricity is characterized in that between insulated conductive layer and metal flow deflector, the low-temperature sintering conducting shell is arranged between radiator and corresponding metal flow deflector respectively.
CN 200620034810 2006-07-03 2006-07-03 Semiconductor thermoelectricity cooled heat pump Expired - Fee Related CN2932237Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200620034810 CN2932237Y (en) 2006-07-03 2006-07-03 Semiconductor thermoelectricity cooled heat pump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200620034810 CN2932237Y (en) 2006-07-03 2006-07-03 Semiconductor thermoelectricity cooled heat pump

Publications (1)

Publication Number Publication Date
CN2932237Y true CN2932237Y (en) 2007-08-08

Family

ID=38348735

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200620034810 Expired - Fee Related CN2932237Y (en) 2006-07-03 2006-07-03 Semiconductor thermoelectricity cooled heat pump

Country Status (1)

Country Link
CN (1) CN2932237Y (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594431A (en) * 2013-10-25 2014-02-19 王春 Semiconductor energy superconducting core
CN103827601A (en) * 2011-09-21 2014-05-28 英派尔科技开发有限公司 Heterogeneous electrocaloric effect heat transfer
US9157669B2 (en) 2011-04-20 2015-10-13 Empire Technology Development Llc Heterogeneous electrocaloric effect heat transfer device
US9508913B2 (en) 2010-06-18 2016-11-29 Empire Technology Development Llc Electrocaloric effect materials and thermal diodes

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9508913B2 (en) 2010-06-18 2016-11-29 Empire Technology Development Llc Electrocaloric effect materials and thermal diodes
US9157669B2 (en) 2011-04-20 2015-10-13 Empire Technology Development Llc Heterogeneous electrocaloric effect heat transfer device
CN103827601A (en) * 2011-09-21 2014-05-28 英派尔科技开发有限公司 Heterogeneous electrocaloric effect heat transfer
CN103827601B (en) * 2011-09-21 2016-08-17 英派尔科技开发有限公司 Heterogeneous electrocaloric effect heat transfer
US9671140B2 (en) 2011-09-21 2017-06-06 Empire Technology Development Llc Heterogeneous electrocaloric effect heat transfer
CN103594431A (en) * 2013-10-25 2014-02-19 王春 Semiconductor energy superconducting core
CN103594431B (en) * 2013-10-25 2016-08-17 王春 A kind of core of semiconductor energy superconduction

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070808

Termination date: 20140703

EXPY Termination of patent right or utility model