CN201819471U - High power refrigeration piece - Google Patents
High power refrigeration piece Download PDFInfo
- Publication number
- CN201819471U CN201819471U CN2010205615796U CN201020561579U CN201819471U CN 201819471 U CN201819471 U CN 201819471U CN 2010205615796 U CN2010205615796 U CN 2010205615796U CN 201020561579 U CN201020561579 U CN 201020561579U CN 201819471 U CN201819471 U CN 201819471U
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- type semiconductor
- semiconductor crystal
- crystal grain
- flow deflector
- crystal grains
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Abstract
The utility model relates to a high power refrigeration piece, comprising two ceramic pieces respectively as a heat dissipation insulating substrate and a cool conduction insulating substrate. A plurality of flow deflectors are arranged on the ceramic pieces. P-type semiconductor crystal grains and N-type semiconductor crystal grains are welded on the flow deflectors. The ceramic pieces are of a square shape and have a side length of 49.8-50.2mm. The number of the flow deflectors ranges from 286 to 290. The number of the P-type semiconductor crystal grains and the number of the N-type semiconductor crystal grains are identical to that of the flow deflectors. The ceramic pieces are beryllium oxide ceramic pieces. More P-type semiconductor crystal grains and N-type semiconductor crystal grains can be installed on the ceramic pieces of a certain size, so that the power of the refrigeration piece is increased. Meanwhile, by employing the beryllium oxide ceramic pieces with large heat conduction coefficient, the heat conduction efficiency of semiconductor refrigeration pieces is significantly enhanced, thereby enabling the semiconductor refrigeration pieces to heat or cool in a more rapid manner and effectively increasing the working efficiency of the semiconductor refrigeration pieces.
Description
Technical field
The utility model relates to a kind of semiconductor cooler, relates in particular to a kind of high-power refrigerating sheet that improves power and heat conductivility.
Background technology
Conductor refrigeration sheet on the market clamps some P types, N-type semiconductor crystal grain formation by the ceramic insulation substrate that flow deflector is housed at present, but be subjected to the volume of ceramic substrate and the restriction of grain size, the P type that a certain size ceramic substrate clamps, the quantity of N-type semiconductor crystal grain are limited, so the watt level of the conductor refrigeration sheet that is assembled at last also is limited, cause the scope of application of conductor refrigeration sheet to have limitation, can not satisfy the needs of the device of the more powerful refrigerating sheet of some needs.
Summary of the invention
The utility model mainly solves original conductor refrigeration sheet and is subjected to the volume of ceramic substrate and the restriction of grain size, the P type that a certain size ceramic substrate clamps, the quantity of N-type semiconductor crystal grain are limited, be difficult to improve the watt level of conductor refrigeration sheet, there is limitation in the scope of application of conductor refrigeration sheet, can not satisfy the technical problem of needs of the device of the more powerful refrigerating sheet of some needs; A kind of more P type, N-type semiconductor crystal grain of clamping on the ceramic substrate of identical size is provided, effectively improve the power of conductor refrigeration sheet, thereby the expansion scope of application satisfies the high-power refrigerating sheet of needs of the device of the more powerful refrigerating sheet of some needs.
The utility model solves the dissatisfactory technical problem of original conductor refrigeration sheet heat transfer efficiency simultaneously; A kind of high-power refrigerating sheet is provided, and it can improve heat transfer efficiency, thereby can heat quickly or refrigeration, effectively improves the operating efficiency of conductor refrigeration sheet.
Above-mentioned technical problem of the present utility model is mainly solved by following technical proposals: the utility model comprises two respectively as the potsherd of radiating insulating substrate and conduction cooling insulated substrate, described potsherd is provided with some flow deflectors, be welded with P-type semiconductor crystal grain and N-type semiconductor crystal grain on the flow deflector, described potsherd is square, the length of side of potsherd is 49.8～50.2mm, described flow deflector has 286～290, and the quantity of described P-type semiconductor crystal grain and N-type semiconductor crystal grain and flow deflector is identical.More flow deflector has been installed on a certain size potsherd, and be welded with a pair of P-type semiconductor crystal grain and N-type semiconductor crystal grain on each flow deflector, therefore also increased the logarithm of P-type semiconductor crystal grain and N-type semiconductor crystal grain, thereby improved the power of refrigerating sheet, enlarged the scope of application of refrigerating sheet, made its device that can satisfy the more powerful refrigerating sheet of some needs or the needs of equipment.Power of the present utility model can be accomplished 400W.
As preferably, the horizontal spacing and the longitudinal pitch of described adjacent flow deflector are 0.39～0.43mm, the length of flow deflector is 3.69～3.73mm, the wide of flow deflector is 1.63～1.67mm, described P-type semiconductor crystal grain and N-type semiconductor crystal grain all are the square that the length of side is 1.58～1.62mm, and the P-type semiconductor crystal grain on the adjacent flow deflector and the spacing d of N-type semiconductor crystal grain are 0.44～0.48mm.By doing flow deflector and P-type semiconductor crystal grain, N-type semiconductor crystal grain less, dwindle the spacing between the adjacent flow deflector, dwindle the P-type semiconductor crystal grain on the adjacent flow deflector and the spacing of N-type semiconductor intergranule, guarantee more P-type semiconductor crystal grain and N-type semiconductor crystal grain under installing on a certain size the potsherd, improve refrigerating sheet power.
As preferably, described potsherd is the beryllium oxide ceramics sheet.The used potsherd of general conductor refrigeration sheet adopts alumina ceramic plate, and thermal conductivity factor is not ideal enough.The utility model adopts the beryllium oxide ceramics sheet, the thermal conductivity factor of beryllium oxide ceramics sheet is 10 times of thermal conductivity factor of alumina ceramic plate, improve heat transfer efficiency widely, thereby the conductor refrigeration sheet can be heated or refrigeration quickly, effectively improved the operating efficiency of conductor refrigeration sheet.
The beneficial effects of the utility model are: by doing flow deflector and P-type semiconductor crystal grain, N-type semiconductor crystal grain less, and dwindle spacing between the adjacent flow deflector, dwindle the P-type semiconductor crystal grain on the adjacent flow deflector and the spacing of N-type semiconductor intergranule, make under installing on a certain size the potsherd more P-type semiconductor crystal grain and N-type semiconductor crystal grain, thereby improved the power of refrigerating sheet, enlarged the scope of application of refrigerating sheet, made its device that can satisfy the more powerful refrigerating sheet of some needs or the needs of equipment.By adopting the bigger beryllium oxide ceramics sheet of thermal conductivity factor, improve the heat transfer efficiency of conductor refrigeration sheet widely, thereby the conductor refrigeration sheet can be heated or refrigeration quickly simultaneously, effectively improved the operating efficiency of conductor refrigeration sheet.
Description of drawings
Fig. 1 is a kind of main TV structure schematic diagram of the present utility model.
Fig. 2 is the sectional structure schematic diagram at A place among Fig. 1.
1. potsherds among the figure, 2. flow deflector, 3.P type semiconductor grain, 4.N type semiconductor grain, 5. pin.
The specific embodiment
Below by embodiment, and in conjunction with the accompanying drawings, the technical solution of the utility model is described in further detail.
Embodiment 1: a kind of high-power refrigerating sheet of present embodiment, as shown in Figure 1, comprise two respectively as the potsherd 1 of radiating insulating substrate and conduction cooling insulated substrate, potsherd 1 is square, and potsherd 1 adopts the beryllium oxide ceramics sheet, be equipped with 288 on the inner face of every potsherd 1 and be the flow deflector 2 that matrix is arranged, be welded with a P-type semiconductor crystal grain 3 and a N-type semiconductor crystal grain 4 on each flow deflector 2 of a slice potsherd, P type on the adjacent flow deflector, the placement of N-type semiconductor crystal grain is opposite in proper order, as shown in Figure 2, corresponding flow deflector on another sheet potsherd welds with N-type semiconductor crystal grain 4 mutually with these P-type semiconductor crystal grain 3 again, make all P-type semiconductor crystal grain 3 and N-type semiconductor crystal grain 4 be cascaded successively, promptly clamped 288 P-type semiconductor crystal grain 3 and 288 N-type semiconductor crystal grain 4 between two potsherds, two outer with stretching out potsherd respectively pins 5 of the two ends of this series circuit link to each other.In the present embodiment, the length of side of potsherd 1 is 50.0mm, the length of flow deflector 2 is 3.71mm, the wide of flow deflector 2 is 1.65mm, the horizontal spacing and the longitudinal pitch of adjacent flow deflector 2 are 0.41mm, P-type semiconductor crystal grain 3 and N-type semiconductor crystal grain 4 all are the square that the length of side is 1.60mm, and the P-type semiconductor crystal grain 3 on the adjacent flow deflector 2 and the spacing d of N-type semiconductor crystal grain 4 are 0.46mm.The refrigerating sheet of present embodiment, power are 400W, and voltage is 35V.
The utility model is by doing flow deflector and P-type semiconductor crystal grain, N-type semiconductor crystal grain less, and dwindle spacing between the adjacent flow deflector, dwindle the P-type semiconductor crystal grain on the adjacent flow deflector and the spacing of N-type semiconductor intergranule, make under installing on a certain size the potsherd more P-type semiconductor crystal grain and N-type semiconductor crystal grain, thereby improved the power of refrigerating sheet, enlarged the scope of application of refrigerating sheet, made its device that can satisfy the more powerful refrigerating sheet of some needs or the needs of equipment.By adopting the bigger beryllium oxide ceramics sheet of thermal conductivity factor, improve the heat transfer efficiency of conductor refrigeration sheet widely, thereby the conductor refrigeration sheet can be heated or refrigeration quickly simultaneously, effectively improved the operating efficiency of conductor refrigeration sheet.
Claims (3)
1. high-power refrigerating sheet, comprise two respectively as the potsherd (1) of radiating insulating substrate and conduction cooling insulated substrate, described potsherd (1) is provided with some flow deflectors (2), be welded with P-type semiconductor crystal grain (3) and N-type semiconductor crystal grain (4) on the flow deflector (2), it is characterized in that described potsherd (1) is square, the length of side of potsherd (1) is 49.8～50.2mm, described flow deflector (2) has 286～290, and described P-type semiconductor crystal grain (3) and N-type semiconductor crystal grain (4) are identical with the quantity of flow deflector (2).
2. a kind of high-power refrigerating sheet according to claim 1, the horizontal spacing and the longitudinal pitch that it is characterized in that described adjacent flow deflector (2) are 0.39～0.43mm, the length of flow deflector (2) is 3.69～3.73mm, the wide of flow deflector (2) is 1.63～1.67mm, described P-type semiconductor crystal grain (3) and N-type semiconductor crystal grain (4) all are the square that the length of side is 1.58～1.62mm, and the P-type semiconductor crystal grain (3) on the adjacent flow deflector (2) and the spacing d of N-type semiconductor crystal grain (4) are 0.44～0.48mm.
3. a kind of high-power refrigerating sheet according to claim 1 and 2 is characterized in that described potsherd (1) is the beryllium oxide ceramics sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205615796U CN201819471U (en) | 2010-10-15 | 2010-10-15 | High power refrigeration piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205615796U CN201819471U (en) | 2010-10-15 | 2010-10-15 | High power refrigeration piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201819471U true CN201819471U (en) | 2011-05-04 |
Family
ID=43917422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205615796U Expired - Fee Related CN201819471U (en) | 2010-10-15 | 2010-10-15 | High power refrigeration piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201819471U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102297544A (en) * | 2011-08-26 | 2011-12-28 | 陈志明 | Semiconductor refrigerating or heating module and production method thereof |
| CN102339947A (en) * | 2011-11-01 | 2012-02-01 | 杭州澳凌制冷设备有限公司 | Method for manufacturing semiconductor refrigeration device |
| CN103353098A (en) * | 2013-06-25 | 2013-10-16 | 陈志明 | High-power LED lamp cooling device and manufacturing method thereof |
| CN103398358A (en) * | 2013-06-25 | 2013-11-20 | 陈志明 | Low-light-degradation and high-power LED street lamp and manufacturing method thereof |
-
2010
- 2010-10-15 CN CN2010205615796U patent/CN201819471U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102297544A (en) * | 2011-08-26 | 2011-12-28 | 陈志明 | Semiconductor refrigerating or heating module and production method thereof |
| CN102339947A (en) * | 2011-11-01 | 2012-02-01 | 杭州澳凌制冷设备有限公司 | Method for manufacturing semiconductor refrigeration device |
| CN103353098A (en) * | 2013-06-25 | 2013-10-16 | 陈志明 | High-power LED lamp cooling device and manufacturing method thereof |
| CN103398358A (en) * | 2013-06-25 | 2013-11-20 | 陈志明 | Low-light-degradation and high-power LED street lamp and manufacturing method thereof |
| CN103353098B (en) * | 2013-06-25 | 2015-09-23 | 陈志明 | A kind of high-powered LED lamp cooling device and preparation method thereof |
| CN103398358B (en) * | 2013-06-25 | 2015-10-21 | 陈志明 | A kind of low light attenuation high-power LED street lamp and preparation method thereof |
| US9412925B2 (en) | 2013-06-25 | 2016-08-09 | Zhiming Chen | High-power LED lamp cooling device and method for manufacturing the same |
| US9989238B2 (en) | 2013-06-25 | 2018-06-05 | Zhiming Chen | Low light failure, high power led street lamp and method for manufacturing the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110504 Termination date: 20161015 |