CN102282621B - 自旋转移力矩磁阻随机存取存储器内的位线电压控制 - Google Patents

自旋转移力矩磁阻随机存取存储器内的位线电压控制 Download PDF

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Publication number
CN102282621B
CN102282621B CN201080004836.9A CN201080004836A CN102282621B CN 102282621 B CN102282621 B CN 102282621B CN 201080004836 A CN201080004836 A CN 201080004836A CN 102282621 B CN102282621 B CN 102282621B
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voltage
bit line
stt
mram
voltage level
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CN102282621A (zh
Inventor
杨赛森
升·H·康
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201080004836.9A 2009-01-30 2010-01-29 自旋转移力矩磁阻随机存取存储器内的位线电压控制 Active CN102282621B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/362,500 US8027206B2 (en) 2009-01-30 2009-01-30 Bit line voltage control in spin transfer torque magnetoresistive random access memory
US12/362,500 2009-01-30
PCT/US2010/022474 WO2010088441A1 (en) 2009-01-30 2010-01-29 Bit line voltage control in spin transfer torque magnetoresistive random access memory

Publications (2)

Publication Number Publication Date
CN102282621A CN102282621A (zh) 2011-12-14
CN102282621B true CN102282621B (zh) 2015-02-11

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Family Applications (1)

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CN201080004836.9A Active CN102282621B (zh) 2009-01-30 2010-01-29 自旋转移力矩磁阻随机存取存储器内的位线电压控制

Country Status (7)

Country Link
US (1) US8027206B2 (https=)
EP (1) EP2392010B1 (https=)
JP (2) JP5643230B2 (https=)
KR (1) KR101317448B1 (https=)
CN (1) CN102282621B (https=)
TW (1) TW201106352A (https=)
WO (1) WO2010088441A1 (https=)

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US9165648B1 (en) * 2011-12-23 2015-10-20 Adesto Technologies Corporation Resistive memory devices, circuits and methods having read current limiting
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KR20130139066A (ko) * 2012-06-12 2013-12-20 삼성전자주식회사 소스라인 전압 발생기를 포함하는 자기 저항 메모리 장치
US9672885B2 (en) 2012-09-04 2017-06-06 Qualcomm Incorporated MRAM word line power control scheme
US9042187B2 (en) * 2012-09-17 2015-05-26 Intel Corporation Using a reference bit line in a memory
US8908428B2 (en) * 2013-01-29 2014-12-09 Samsung Electronics Co., Ltd. Voltage assisted STT-MRAM writing scheme
US9530469B2 (en) * 2013-03-15 2016-12-27 Sony Semiconductor Solutions Corporation Integrated circuit system with non-volatile memory stress suppression and method of manufacture thereof
US9230618B2 (en) 2014-03-06 2016-01-05 Kabushiki Kaisha Toshiba Semiconductor storage device
KR102212755B1 (ko) 2014-07-31 2021-02-05 삼성전자주식회사 전압 발생기 및 이를 포함하는 메모리 장치
KR102265464B1 (ko) * 2014-12-12 2021-06-16 삼성전자주식회사 분리 센싱 타입의 센싱 회로를 가지는 반도체 메모리 장치 및 그에 따른 데이터 센싱 방법
US9666269B2 (en) 2015-02-13 2017-05-30 Qualcomm Incorporated Collision detection systems for detecting read-write collisions in memory systems after word line activation, and related systems and methods
JP6381461B2 (ja) 2015-03-10 2018-08-29 東芝メモリ株式会社 不揮発性半導体メモリ
US9437272B1 (en) * 2015-03-11 2016-09-06 Qualcomm Incorporated Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays
US9767875B2 (en) 2015-08-11 2017-09-19 Nxp Usa, Inc. Capacitive sensing and reference voltage scheme for random access memory
US9514810B1 (en) 2016-02-08 2016-12-06 Freescale Semiconductor, Inc. Resistive non-volatile memory cell and method for programming same
US9659623B1 (en) 2016-03-28 2017-05-23 Nxp Usa, Inc. Memory having a plurality of resistive non-volatile memory cells
US9923553B2 (en) 2016-07-18 2018-03-20 Nxp Usa, Inc. Systems and methods for non-volatile flip flops
US9847127B1 (en) 2016-11-21 2017-12-19 Nxp Usa, Inc. Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory
US10839879B2 (en) 2018-09-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Read techniques for a magnetic tunnel junction (MTJ) memory device with a current mirror
US10867652B2 (en) 2018-10-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Read circuit for magnetic tunnel junction (MTJ) memory
KR102667819B1 (ko) 2019-07-11 2024-05-21 삼성전자주식회사 전원 전압과 관계없이 동작하는 스위치 회로를 포함하는 메모리 장치
US11398262B1 (en) 2021-04-16 2022-07-26 Sandisk Technologies Llc Forced current access with voltage clamping in cross-point array

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CN1617258A (zh) * 2003-11-14 2005-05-18 三星电子株式会社 磁性隧道结单元及磁性随机存取存储器

Also Published As

Publication number Publication date
WO2010088441A1 (en) 2010-08-05
KR101317448B1 (ko) 2013-10-11
JP2014026719A (ja) 2014-02-06
JP2012516523A (ja) 2012-07-19
EP2392010B1 (en) 2017-11-01
EP2392010A1 (en) 2011-12-07
TW201106352A (en) 2011-02-16
JP5643230B2 (ja) 2014-12-17
US20100195376A1 (en) 2010-08-05
US8027206B2 (en) 2011-09-27
CN102282621A (zh) 2011-12-14
KR20110122691A (ko) 2011-11-10

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