CN102272908A - 晶片接合用树脂浆料、使用该浆料的半导体装置的制造方法及半导体装置 - Google Patents

晶片接合用树脂浆料、使用该浆料的半导体装置的制造方法及半导体装置 Download PDF

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Publication number
CN102272908A
CN102272908A CN2010800041529A CN201080004152A CN102272908A CN 102272908 A CN102272908 A CN 102272908A CN 2010800041529 A CN2010800041529 A CN 2010800041529A CN 201080004152 A CN201080004152 A CN 201080004152A CN 102272908 A CN102272908 A CN 102272908A
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China
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resin
semiconductor device
die bonding
resin paste
chip
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CN2010800041529A
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Inventor
杉浦良史
横地精吾
森修一
片山阳二
堂堂隆史
江花哲
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Showa Denko Materials Co ltd
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Hitachi Chemical Co Ltd
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Publication of CN102272908A publication Critical patent/CN102272908A/zh
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
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Abstract

本发明提供一种晶片接合用树脂浆料，其在B阶段化的宽的温度范围内与芯片的粘接强度优异，同时还能够减少与芯片之间的空隙，而且在焊锡回流焊工序中其受热晶片剪切强度也优异。其为含有使具有羧基的丁二烯的聚合物(a1)和具有环氧基的化合物(a2)反应而得到的聚合物(A)、热固性树脂(B)以及填料(C)的晶片接合用树脂浆料。

Description

晶片接合用树脂浆料、使用该浆料的半导体装置的制造方法及半导体装置
技术领域
本发明涉及用作IC、LSI等半导体芯片(以下有时也称为芯片)与引线框或绝缘性支持基板等(以下称为基板)支持部件的接合材料(以下称为晶片接合材料)的晶片接合用树脂浆料、使用该浆料的半导体装置的制造方法及半导体装置。
背景技术
作为IC、LSI等半导体元件与引线框或绝缘性支持基板等支持部件的接合材料，即晶片接合材料，迄今已知有Au-Si共晶合金、焊料、银浆料等。但是，Au-Si共晶合金虽然耐热性和耐湿性高，但由于弹性模量大，因此，在适用于大型芯片时具有容易破裂的倾向。并且，Au-Si共晶合金还存在价格昂贵的问题。另一方面，焊料虽然价格便宜，但耐热性较差，其弹性模量和Au-Si共晶合金同样高，难以适用于大型芯片。
与此相对，银浆料(例如参照专利文献1)价格便宜，耐湿性高，与Au-Si共晶合金和焊料相比，弹性模量低，还具有可适用于350℃的热压合型引线接合的耐热性。因此，现在在上述晶片接合材料中银浆料被广泛使用。但是，随着IC、LSI的高集成化发展，芯片逐渐变得大型化，当适用这种状况时，难以扩展至芯片整个面涂布银浆料，效率低。
另一方面，作为可应对芯片的大型化的晶片接合材料，已知有使用特定的聚酰亚胺树脂的粘接膜、以及向特定的聚酰亚胺树脂加入导电性填料或无机填料的晶片接合用粘接膜等膜状的晶片接合材料(参照专利文献2～4)。
现有技术文献
专利文献
专利文献1：日本特开2002-179769号公报
专利文献2：日本特开平07-228697号公报
专利文献3：日本特开平06-145639号公报
专利文献4：日本特开平06-264035号公报
发明内容
发明要解决的课题
粘接膜型的晶片接合材料在支持基板上能够容易形成晶片接合层。特别是如专利文献2～4所公开的粘接膜，相对于42合金引线框(铁-镍合金)等支持基板可适宜地使用，并且在具有良好的受热晶片剪切强度的方面优异。但是，在将作为晶片接合材料的粘接膜有效地粘贴于支持基板的场合，需要用于事先将粘接膜切成或冲裁成芯片大小、再粘贴于支持基板的粘贴装置。另外，冲裁粘接膜而一起粘贴多个芯片部分的方法具有容易产生粘接膜的浪费的倾向。另外，支持基板的大部分由于在基板内部形成有内层配线，从而在粘贴粘接膜的表面凹凸较多，粘贴粘接膜时会产生空隙，具有半导体装置的可靠性容易降低的倾向。
另外，近年，BOC(Board On Chip)型的半导体装置受到关注，有机基板等绝缘性支持基板被使用。在使用上述绝缘性支持基板的半导体装置的制造工序中，考虑到绝缘性支持基板的耐热性等，需要在例如200℃以下的比较低的温度搭载半导体元件。但是，如专利文献2～4所公开的粘接膜具有低温粘接性差的倾向，大多时候难以在比较低的温度(200℃以下)粘贴芯片。因此，在BOC型的半导体装置的制造中，低温粘接性优异的晶片接合用树脂浆料受到关注。
使用晶片接合用树脂浆料的芯片的粘贴方法一般为，例如对涂布于基板的晶片接合用树脂浆料进行B阶段化后，向其加热、压合芯片，使其暂时粘接，为了完全固定芯片和基板，在180℃后固化1小时左右。通常，如果省略晶片接合用树脂浆料的后固化，则芯片和基板等的粘接性不充分，在引线接合的工序中芯片振动，有可能产生不良。另外，在密封工序中，如果芯片和基板等的粘接性不充分，则由于来自芯片侧面的密封材料的流动，芯片有可能剥落。
但是，最近，从缩短半导体封装体的组装时间的观点出发，寻求即使省略后固化，在引线接合和密封工序中也不产生不良情况的晶片接合用树脂浆料。因此，对于使用省略了后固化工序的晶片接合用树脂浆料的粘贴方法，B阶段化状态的晶片接合用树脂浆料的层需要具备与芯片的良好的粘接性。另外，希望与芯片的粘接性不受B阶段化的温度范围的影响、即在宽的温度范围内具有良好的粘接强度的晶片接合用树脂浆料。另外，粘贴芯片时，有时在B阶段化状态的晶片接合用树脂浆料的层与芯片之间产生空隙(以下称为空隙)，也希望能够减少空隙。空隙大时，在焊锡回流焊工序中容易在晶片接合材料中产生裂纹，半导体装置的可靠性有可能降低。
进一步地，密封工序后是焊锡回流焊工序，由于此时的最高温度为250℃～260℃，因此对于晶片接合用树脂浆料，也要求在250℃～260℃的受热晶片剪切强度优异。
本发明是鉴于这样的情况而完成的，其目的在于提供一种晶片接合用树脂浆料，该浆料在B阶段化的宽的温度范围内具有与芯片的良好的粘接强度，同时也能够减少与芯片之间的空隙，而且即使在焊锡回流焊工序中也具有充分的受热晶片剪切强度。另外，本发明的目的在于提供使用了上述晶片接合用树脂浆料的半导体装置的制造方法。进一步地，本发明的目的在于提供使用了上述晶片接合用树脂浆料的可靠性优异的半导体装置。
解决课题的方法
为了完成上述课题，本发明中采用以下的构成。即，本发明的一实施方式涉及一种晶片接合用树脂浆料，其含有使具有羧基的丁二烯的聚合物(a1)和具有环氧基的化合物(a2)反应而得到的聚合物(A)、热固性树脂(B)以及填料(C)。
本发明的另一实施方式涉及使用上述晶片接合用树脂浆料的半导体装置的制造方法，即涉及一种半导体装置的制造方法，包括：(1)在基板上涂布上述晶片接合用树脂浆料的工序；(2)干燥前述树脂浆料，对树脂浆料进行B阶段化的工序；(3)在进行了B阶段化的前述树脂浆料上搭载半导体芯片的工序。
本发明的另一实施方式涉及使用上述晶片接合用树脂浆料的半导体装置的制造方法，包括：(1)在基板上涂布上述晶片接合用树脂浆料的工序；(2)干燥前述树脂浆料、对树脂浆料进行B阶段化的工序；(3)在进行了B阶段化的前述树脂浆料上搭载半导体芯片的工序。还涉及由该制造方法得到的半导体装置。
本发明的另一实施方式涉及一种半导体装置的制造方法，包括：(1)在基板上涂布上述晶片接合用树脂浆料的工序；(2)在涂布的树脂浆料上搭载半导体芯片的工序；(3)使用密封剂密封前述半导体芯片的工序。
进一步地，本发明的另一实施方式涉及一种半导体装置，其由包括(1)在基板上涂布上述晶片接合用树脂浆料的工序、(2)在涂布的树脂浆料上搭载半导体芯片的工序、(3)使用密封剂密封前述半导体芯片的工序的半导体装置的制造方法得到。
本说明书的内容涉及日本国特许申请2009-070531号(2009年3月23日提出申请)中包含的主题，参照这些申请说明书，整体引入本说明书中。
发明效果
根据本发明的一个实施方式，能够提供一种晶片接合用树脂浆料，该浆料在B阶段化的宽的温度范围内具有与芯片的良好的粘接强度，同时也能够减少与芯片之间的空隙，而且即使在焊锡回流焊工序中也具有充分的受热晶片剪切强度。另外，根据本发明的一个实施方式，即使省略粘贴芯片后的后固化，在引线接合和密封的工序中也不会产生不良情况，因此可以缩短制造工序。
本发明的一个实施方式所涉及的晶片接合用树脂浆料由于低温粘接性优异，因此作为晶片接合材料适于有机基板等绝缘性支持基板。另外，根据本发明的一个实施方式，通过使用上述本发明的晶片接合用树脂浆料，能够提供操作性优异的半导体装置的制造方法。进一步地，根据本发明的一个实施方式，通过使用上述本发明的晶片接合用树脂浆料，能够提供可靠性优异的半导体装置。
附图说明
图1为表示本发明的半导体装置的制造工序的一个例子的图。
图2为作为本发明的半导体装置的一个例子的BOC的截面图。
图3为作为本发明的半导体装置的一个例子的引线框型半导体装置的一个实施例的截面图。
具体实施方式
以下，视情况一边参照附图，一边对本发明的优选实施方式进行详细说明。另外，附图中，对相同或相当部分附上相同符号，并省略重复的说明。另外，本发明中，“B阶段化”是指在涂布晶片接合用树脂浆料后进行热处理，使溶剂(D)挥发，以使涂布的晶片接合用树脂浆料处于干燥状态，且在该状态下晶片接合用树脂浆料未完全固化。完全固化定义为在使用DSC(Differentialscanning calorimetry)的测定中，在80～180℃(升温速度：10℃/分钟)的范围内无吸热峰的状态，以下有时也称为“后固化”。
以下，进一步详细说明本发明。
本发明所涉及的晶片接合用树脂浆料(以下有时也仅称为“树脂浆料”)含有使具有羧基的丁二烯的聚合物(a1)和具有环氧基的化合物(a2)反应而得到的聚合物(A)、热固性树脂(B)以及填料(C)。
[具有羧基的丁二烯的聚合物(a1)]
作为具有羧基的丁二烯的聚合物(以下有时简称成分(a1))，只要是具有聚丁二烯结构和羧基，则没有特别限定。例如，可以为衍生自丁二烯的聚丁二烯结构和具有羧基的化合物的共聚物。另外，也可以为以丁二烯和丙烯腈等其他的聚合性化合物形成的共聚物为主链，其末端的至少一端具有羧基的物质。从印刷性、粘接强度和操作性的观点出发，成分(a1)的数均分子量优选为500～10000，更加优选为1000～7000。本发明中，前述成分(a1)更加优选为下述通式(1)所表示的具有羧基的丁二烯-丙烯腈共聚物。
[通式(1)中，x/y为95/5～50/50，n为5～50的整数。]
上述通式(1)所表示的化合物也可以作为市售品购入。
作为前述通式(1)所表示的具有羧基的丁二烯-丙烯腈共聚物，作为市售品例如可以购入Hycar CTBN-2009×162、CTBN-1300×31、CTBN-1300×8，CTBN-1300×13、CTBN-1300×9(均为宇部兴产株式会社制造)。另外，作为本发明中优选的成分(a1)的例子，可举出作为具有羧基的低分子量液态聚丁二烯的NISSO-PB-C-2000(日本曹达株式会社制造，商品名)等。
这些可单独使用，或2种以上组合使用。
[具有环氧基的化合物(a2)]
作为具有环氧基的化合物(以下有时简称成分(a2))，没有特别限定，例如可举出：乙二醇二缩水甘油醚、二甘醇二缩水甘油醚、丙二醇二缩水甘油醚、三甘醇二缩水甘油醚、甘油三缩水甘油醚等缩水甘油醚型环氧化合物；以二聚酸等多元羧酸及其酸酐为原料的缩水甘油酯型环氧化合物；以脂肪族胺为原料的缩水甘油胺型环氧化合物等脂肪族环氧化合物；具有由对苯二酚、甲基对苯二酚、二甲基对苯二酚、三甲基对苯二酚、间苯二酚、甲基间苯二酚、邻苯二酚、甲基邻苯二酚、联苯酚、四甲基联苯酚、二羟基萘、二羟基甲基萘、二羟基二甲基萘、双(4-羟基苯基)酮、双(4-羟基-3，5-二甲基苯基)酮、双(4-羟基-3，5-二氯苯基)酮、双(4-羟基苯基)砜、双(4-羟基-3，5-二甲基苯基)砜、双(4-羟基-3，5-二氯苯基)砜、双(4-羟基苯基)六氟丙烷、双(4-羟基-3，5-二甲基苯基)六氟丙烷、双(4-羟基-3，5-二氯苯基)六氟丙烷、双(4-羟基苯基)二甲基硅烷、双(4-羟基-3，5-二甲基苯基)二甲基硅烷、双(4-羟基-3，5-二氯苯基)二甲基硅烷、双(4-羟基苯基)甲烷、双(4-羟基-3，5-二氯苯基)甲烷、双(4-羟基-3，5-二溴苯基)甲烷、2，2-双(4-羟基苯基)丙烷、2，2-双(4-羟基-3，5-二甲基苯基)丙烷、2，2-双(4-羟基-3，5-二氯苯基)丙烷、2，2-双(4-羟基-3-甲基苯基)丙烷、2，2-双(4-羟基-3-氯苯基)丙烷、双(4-羟基苯基)醚、双(4-羟基-3，5-二甲基苯基)醚、双(4-羟基-3，5-二氯苯基)醚、9，9-双(4-羟基苯基)芴、9，9-双(4-羟基-3-甲基苯基)芴、9，9-双(4-羟基-3-氯苯基)芴、9，9-双(4-羟基-3-溴苯基)芴、9，9-双(4-羟基-3-氟苯基)芴、9，9-双(4-羟基-3-甲氧基苯基)芴、9，9-双(4-羟基-3，5-二甲基苯基)芴、9，9-双(4-羟基-3，5-二氯苯基)芴、9，9-双(4-羟基-3，5-二溴苯基)芴等的1种以上和环氧卤丙烷的缩合得到的二缩水甘油基化合物等具有芳香环的环氧化合物等1分子内具有2个环氧基的化合物。
另外，还可以使用酚的缩水甘油醚型的环氧树脂。作为这样的树脂，可举出双酚A、双酚AD、双酚S、双酚F、或卤化双酚A和环氧氯丙烷的缩合物、苯酚酚醛清漆树脂的缩水甘油醚、甲酚酚醛清漆树脂的缩水甘油醚、双酚A酚醛清漆树脂的缩水甘油醚等。这些可以单独使用或2种以上组合使用。这些环氧化合物中，特别地，从树脂的强度的观点出发，特别优选下述通式(2)所表示的环氧化合物。
Figure BPA00001397852800071
[式(2)中，X表示单键、-O-、-S-、-SO2-、-CH2-、
Figure BPA00001397852800073
R1和R2分别独立地表示氢原子、碳原子数为1～6的烷基或卤原子，m和n分别独立地表示1～4的整数。另外，n为2以上时，存在多个的R1可以相同也可以不同，m为2以上时，存在多个的R2可以相同也可以不同。]
这些具有环氧基的化合物可以单独使用或2种以上组合使用。
[聚合物(A)]
聚合物(A)由成分(a1)和成分(a2)反应得到。就此时的配合比而言，相对于成分(a1)的1羧酸当量，成分(a2)的环氧当量如果考虑粘接强度则优选为0.01以上，如果考虑发生除气所引起的剥离的难易度则优选为10以下，更加优选为0.1～2，特别优选为0.25～1。
聚合物(A)的粘度可以根据合成时的反应温度和反应时间进行调整，通过提高反应温度或延长反应时间，粘度倾向于升高。从能够提高粘接强度的观点出发，聚合物(A)的优选粘度为150Pa·s以上，更加优选为300～900Pa·s，特别优选为500～700Pa·s。特别地，以适当的材料比使具有羧基的丁二烯的均聚物或共聚物和具有环氧基的化合物反应，进而使粘度为300Pa·s以上时，从能够进一步提高树脂浆料形成时的粘接强度的观点出发是优选的，粘度为900Pa·s以下则树脂浆料形成时的操作性良好。
聚合物(A)的重均分子量优选为5000以上，更加优选为15000～70000，特别优选为17000～40000。重均分子量如果为5000以上，则粘接强度更加优异，如果小于70000，则能够进一步提高树脂浆料形成时的操作性。
另外，重均分子量(Mw)和数均分子量(Wn)可通过凝胶渗透色谱(GPC)进行测定(由使用了标准苯乙烯的标准曲线换算)。
另外，聚合物(A)的酸值优选为10～25mgKOH/g，更加优选为15～23mgKOH/g。
如果酸值为10～25mgKOH/g，则可进一步提高树脂浆料形成时的操作性。
上述聚合物(A)的酸值可通过以下方法进行测定。首先，精确称量聚合物(A)的树脂溶液约1g后，向该树脂溶液添加丙酮30g，均匀溶解树脂溶液。接着，向该溶液适量添加作为指示剂的酚酞，使用0.1N的KOH水溶液进行滴定。然后由测定结果通过以下的式(3)算出酸值。
A＝10×Vf×56.1/(Wp×I)……(3)
另外，式(3)中，A表示酸值(mgKOH/g)，Vf表示酚酞的滴定量(mL)，Wp表示聚合物(A)的树脂溶液重量(g)，I表示聚合物(A)的树脂溶液的不挥发成分的比例(质量％)。
从基板与芯片之间的应力缓和性及粘接强度的观点出发，(A)成分的含有率在(A)成分和(B)成分的总量中优选为50～99重量％，更加优选为75～97重量％，特别优选为80～95重量％。
[热固性树脂(B)]
作为热固性树脂(B)没有特别限定，例如可举出环氧树脂、酚树脂、1分子中具有至少2个热固化性酰亚胺基的酰亚胺化合物等。这些可以单独使用1种或组合使用2种以上。
前述环氧树脂是分子内含有至少2个环氧基的物质，从受热晶片剪切强度的观点考虑，优选为苯酚的缩水甘油醚型的环氧树脂。作为这样的树脂，可举出双酚A、双酚AD、双酚S、双酚F、或卤化双酚A和环氧氯丙烷的缩合物、苯酚酚醛清漆树脂的缩水甘油醚、甲酚酚醛清漆树脂的缩水甘油醚、双酚A酚醛清漆树脂的缩水甘油醚等。这些可以单独使用1种或组合使用2种以上。
从受热晶片剪切强度的观点考虑，使用环氧树脂时的含量，相对于聚合物(A)100质量份，优选为1～100质量份，更加优选为2～50质量份，特别优选为3～20质量份。
前述酚树脂为分子中具有至少2个酚羟基的物质，例如可举出苯酚酚醛清漆树脂、甲酚酚醛清漆树脂、双酚A型酚醛清漆树脂、聚对乙烯基苯酚、苯酚芳烷基树脂等。这些可以单独使用1种，或组合使用2种以上。
如果考虑受热晶片剪切强度和半导体封装体可靠性，则使用前述酚树脂时的含量，相对于聚合物(A)100质量份，优选为0.5～100质量份，更加优选为1～50质量份，特别优选为2～20质量份。
从能够提高半导体封装体可靠性的观点出发，优选并用环氧树脂和酚树脂。
作为前述1分子中具有至少2个热固化性酰亚胺基的酰亚胺化合物，例如可举出邻二马来酰亚胺苯、间二马来酰亚胺苯、对二马来酰亚胺苯、1，4-二(对马来酰亚胺枯基)苯、1，4-二(间马来酰亚胺枯基)苯等。这些可以单独使用1种，或组合使用2种以上。
进一步地，还优选使用下述式(I)～(III)所表示的酰亚胺化合物等。
Figure BPA00001397852800091
[式中，X’和Y表示O、CH2、CF2、SO2、S、CO、C(CH3)2或C(CF3)2；R1、R2、R3、R4、R5、R6、R7和R8分别独立地表示氢、低级烷基、低级烷氧基、氟原子、氯原子或溴原子；D表示具有乙烯性不饱和双键的二羧酸残基；m’表示0～4的整数。]
如果考虑树脂浆料的保存稳定性，则使用酰亚胺化合物时的含量，相对于聚合物(A)100重量份，更加优选为小于100重量份。
作为式(I)的酰亚胺化合物，例如可举出4，4-双马来酰亚胺二苯醚、4，4-双马来酰亚胺二苯甲烷、4，4-双马来酰亚胺-3，3’-二甲基-二苯甲烷、4，4-双马来酰亚胺二苯砜、4，4-双马来酰亚胺二苯硫醚、4，4-双马来酰亚胺二苯酮、2，2’-双(4-马来酰亚胺苯基)丙烷、4，4-双马来酰亚胺二苯氟甲烷、1，1，1，3，3，3-六氟-2，2-双(4-马来酰亚胺苯基)丙烷等。
作为式(II)的酰亚胺化合物，例如可举出双[4-(4-马来酰亚胺苯氧基)苯基]醚、双[4-(4-马来酰亚胺苯氧基)苯基]甲烷、双[4-(4-马来酰亚胺苯氧基)苯基]氟甲烷、双[4-(4-马来酰亚胺苯氧基)苯基]砜、双[4-(3-马来酰亚胺苯氧基)苯基]砜、双[4-(4-马来酰亚胺苯氧基)苯基]硫醚、双[4-(4-马来酰亚胺苯氧基)苯基]酮、2，2-双[4-(4-马来酰亚胺苯氧基)苯基]丙烷、1，1，1，3，3，3-六氟-2，2-双[4-(4-马来酰亚胺苯氧基)苯基]丙烷等。
为了促进这些酰亚胺化合物的固化，可以使用自由基聚合剂。作为自由基聚合剂，可举出乙酰基过氧化环已基磺酰、过氧化异丁酰、过氧化苯甲酰、过氧化辛酰、过氧化乙酰、过氧化二异丙苯、氢过氧化枯烯、偶氮二异丁腈等。使用自由基聚合剂时的含量，相对于酰亚胺化合物100重量份，优选为0.01～1.0重量份。
在比较高的温度进行B阶段化时，从能够提高之后的芯片加热压合时的晶片接合层的濡湿扩大的观点出发，作为(B)成分的热固性树脂的含量，相对于上述成分(A)100质量份，优选为1～100质量份，更加优选为3～30质量份，特别优选为5～20质量份。
[填料(C)]
作为填料(C)，并不限定于以下的例子，例如可举出银粉、金粉、铜粉等导电性填料；二氧化硅、氧化铝、氧化钛、玻璃、氧化铁、陶瓷等无机物质填料等。这些可以单独使用1种或组合使用2种以上。
填料(C)中，银粉、金粉、铜粉等导电性填料能够提高晶片接合材料的导电性、传热性及树脂浆料的触变性。另外，二氧化硅、氧化铝、氧化钛、玻璃、氧化铁、陶瓷等无机物质填料能够提高晶片接合材料的低热膨胀性、低吸湿率及触变性。
这些中，特别地，从半导体封装体可靠性的观点出发，大致优选二氧化硅。
如果考虑半导体封装体可靠性，则填料(C)的平均粒径优选为0.001μm～10μm，更加优选为0.005～5μm，特别优选为0.01～1μm。
作为提高半导体装置的电可靠性的填料(C)，还可以添加无机离子交换体。作为无机离子交换体，当在热水中萃取树脂浆料固化物时可确认到被萃取到水溶液中的离子例如Na+、K+、Cl-、F-、RCOO-、Br-等的离子捕捉作用的物质是有效的。作为这样的离子交换体，可举出天然产出的沸石、沸石类、酸性粘土、白云石、水滑石类等天然矿物，人工合成的合成沸石等作为例子。
这些导电性填料或无机物质填料可以分别混合2种以上而使用。在不损害物性的范围，也可以混合使用1种以上导电性填料和1种以上无机物质填料。
如果考虑树脂浆料的触变指数(1.5以上)，则填料(C)的含量相对于上述聚合物(A)100质量份优选为1质量份以上，如果考虑粘接强度、固化物的弹性模量、晶片接合材料的应力缓和能力及半导体装置的安装可靠性，则优选为100质量份以下。更加优选为2～50质量份，特别优选为3～30质量份。另外，在比较低的温度进行B阶段化时，从能够抑制之后的芯片加热压合时的晶片接合层的濡湿扩大的观点出发，优选为10质量份以上。
填料(C)的混合、混炼适宜地组合常用的搅拌机、混砂机、三辊研磨机、球磨机等分散机来进行。
[溶剂(D)]
本发明的树脂浆料可含有溶剂(D)。溶剂(D)优选从能够均匀混炼或分散填料的有机溶剂中进行选择。考虑到印刷时防止有机溶剂挥发及B阶段化时的干燥性，优选选择沸点(大气压)为100℃以上且小于250℃的有机溶剂。
作为这样的有机溶剂，例如可举出N-甲基-2-吡咯烷酮、二甘醇二甲醚(也称为“双(2-甲氧基乙基)醚”)、三甘醇二甲醚(也称为“二缩三乙二醇二甲醚”)、二甘醇二乙醚、2-(2-甲氧基乙氧基)乙醇、γ-丁内酯、异佛尔酮、卡必醇、醋酸卡必醇酯、1，3-二甲基-2-咪唑烷酮、醋酸-2-(2-丁氧基乙氧基)乙酯、乙基溶纤剂、乙基溶纤剂醋酸酯、丁基溶纤剂、二噁烷、环己酮、苯甲醚、以石油蒸馏物为主体的溶剂等。这些溶剂可单独使用1种或组合使用2种以上。
这些溶剂中，由于吸水性低而特别优选醋酸卡必醇酯。
从印刷性的观点出发，使用溶剂(D)时的含量相对于聚合物(A)100质量份优选为5～200质量份，更加优选为10～100质量份，特别优选为30～80质量份。
另外，未使用溶剂(D)时，树脂浆料可省略B阶段化的工序。未使用溶剂(D)时，从印刷性的观点出发，热固性树脂(B)优选在常温为液态。
[固化促进剂(E)]
本发明的树脂浆料优选含有固化促进剂(E)。固化促进剂(E)能够促进热固性树脂(B)的固化。特别地，在使用作为热固化性树脂(B)的环氧树脂的场合特别有效。
作为固化促进剂(E)，例如可举出咪唑类、双氰胺衍生物、二羧酸二酰肼、三苯基膦、四苯硼酸四苯基膦、2-乙基-4-甲基咪唑-四苯基硼酸酯、1，8-二氮杂双环(5，4，0)十一碳烯-7-四苯基硼酸酯等。这些物质可以单独使用1种或组合使用2种以上。
使用固化促进剂(E)时的含量，相对于热固性树脂(B)100质量份优选为0.01质量份以上，如果考虑树脂浆料的保存稳定性，则优选为20质量份以下。更加优选为0.1～10质量份，特别优选为0.5～5质量份。
[其他成分]
进一步地，本发明的树脂浆料中根据需要还可添加消泡剂、破泡剂、抑泡剂、硅烷系偶联剂、钛系偶联剂、非离子系表面活性剂、氟系表面活性剂、有机硅系增塑剂等各种添加剂。
通过将上述各成分使用例如Hivis Supermix等混炼机在搅拌桨10rpm下混合、搅拌10分钟能够得到树脂浆料。
如果考虑基板与芯片难以分离及组装操作性，则树脂浆料固化后(在180℃、1小时、以厚度100μm固化的场合)的弹性模量，即树脂浆料固化物的弹性模量优选为1MPa以上，如果考虑基板与芯片间的应力缓和性及半导体封装体的耐温度周期性，则优选为300MPa以下。
上述弹性模量是利用动态粘弹性测定装置来测定干燥固化后的树脂浆料固化物的储能弹性模量E’时的25℃的值。“干燥固化后”意思是使树脂成分完全固化后，例如，涂布树脂浆料，在B阶段化后，利用干燥机等于180℃下加热1小时。
另外，树脂浆料的固体成分浓度优选为20～95重量％，更加优选为40～90重量％，特别优选为60～80重量％。如果上述固体成分为20重量％以上，则从抑制基于树脂浆料干燥后的体积减少的形状变化的观点出发是优选的，如果为95重量％以下，则能够进一步提高树脂浆料的流动性和印刷操作性。
树脂浆料的触变指数优选为1.5～10.0，更加优选为2.0～7.0，特别优选为3.0～5.0。如果树脂浆料的触变指数为1.5以上，则从抑制利用印刷法供给、涂布的树脂浆料的流挂(ダレ)等的发生和良好地保持印刷形状的观点出发是优选的。另外，如果该触变指数为10.0以下，则从抑制利用印刷法供给、涂布的树脂浆料的“缺口”或不足(カスレ)等的发生的观点出发是优选的。
树脂浆料的粘度(25℃)优选为5～1000Pa·s，更加优选为20～500，特别优选为50～200Pa·s。树脂浆料的粘度为5～1000Pa·s时，从印刷性的观点出发是优选的。树脂浆料的粘度优选根据印刷法的种类适宜地进行调整，例如像丝网版等那样网孔等在掩模开口部伸展的情况下，考虑网孔部的透过性优选调整至5～100Pa·s的范围；在模版(stencil)等的情况下，优选调整至20～500Pa·s的范围。另外，B阶段化的晶片接合层中残存的孔隙较多的情况下，优选调整至150Pa·s以下的粘度。
上述粘度为使用E型旋转粘度计在25℃、转速0.5rpm时测定时的值。触变指数定义为，使用E型旋转粘度计在25℃、转速0.5rpm时测定时的值与在转速5rpm时测定时的值之比(触变指数＝(0.5rpm时的粘度)/(5rpm时的粘度))。
[半导体装置(半导体封装体)的制造]
以下，就半导体装置的制造方法进行说明。
图1为表示半导体装置的制造工序的一个例子的示意图。
首先，将本发明的树脂浆料印刷在被印刷体上。作为被印刷体，可举出42合金引线框或铜引线框等引线框，或者聚酰亚胺树脂、环氧树脂、聚酰亚胺系树脂等塑料膜，或者使玻璃无纺布等基材含浸聚酰亚胺树脂、环氧树脂、聚酰亚胺系树脂等塑料并固化后的基材，或者氧化铝等陶瓷制等的绝缘性支持基板。印刷方法例如可举出丝网印刷法。具体而言，如图1(a)所示，可以在基板101上，使用涂刷器103，通过金属掩模102涂布本发明的树脂浆料104。
接着，对涂布的树脂浆料进行热处理以使溶剂干燥(B阶段化)，得到B阶段化后的晶片接合层(图1(b))。由此，可得到形成有B阶段化状态的树脂浆料的层(以下称为晶片接合层)的支持基板。作为进行B阶段化的温度，优选为100～200℃，更加优选为120～180℃。从操作效率的观点出发，进行B阶段化的时间优选为120分钟以下，在使用溶剂(D)的情况下，从升高挥发率的观点出发，优选为5分钟以上。另外，作为B阶段化的条件，从防止晶片接合层的裂纹的观点出发，优选对从室温升温、和向室温降温的工序使用10分钟以上慢慢地进行加热、降温。
接下来，在形成有上述晶片接合层的支持基板上粘贴IC、LSI等半导体元件(芯片)，通过加热将芯片接合于支持基板上。如图1(c)所示，可将基板的晶片接合层一侧粘贴在放置于热源106的芯片107上。在使用有机基板等的情况下，从有机基板的耐热性的观点出发，加热温度优选为200℃以下，从粘接强度的观点出发，优选为100～200℃。
接着，通过将晶片接合层后固化的工序可得到固化状态的晶片接合层108，芯片被搭载于支持基板(图1(d))。在安装组装工序中没有问题的情况下，晶片接合层的后固化可以在密封材料的后固化工序时一起进行。此处所述的安装组装工序中的问题是指，芯片与基板等的固定不充分，在引线接合的工序时导致芯片振动，从而在引线接合中产生不良，或者在密封工序时由于芯片在基板上固定不足，来自芯片侧面的密封材料的流动会导致芯片剥落。
接着，可以通过引线109将基板和芯片进行电连接(图1(e))。
接着，可以在金属模具内配置搭载有芯片的基板，通过挤出机111将密封材料112填充入金属模具110内从而密封(图1(f))。
本发明所涉及的半导体装置的制造方法可包含以上各工序，本发明所涉及的半导体装置可通过包含以上各工序的制造方法来制造。
图2为表示作为本发明所涉及的半导体装置的一个实施方式的BOC型半导体装置的结构的截面示意图。BOC型半导体装置100具有如下结构：在中部设置了窗口的基板2的一面上通过晶片接合层4搭载半导体元件6，在与基板2的半导体元件搭载面相反的面上形成配线图案8、绝缘层10和焊球12，将半导体元件2的端子部分(未图示)和配线图案8通过引线14连接，并且通过树脂等密封材料16至少对其连接部分进行密封。本发明中的树脂浆料由于在加热、粘贴IC、LSI等半导体元件(芯片)的工序中可以在100～200℃进行接合，因此特别适于使用有机基板的BOC型半导体装置的制造。但是，本发明中的树脂浆料并不限定于BOC型半导体装置的制造，也可适用于具有其他构成的半导体装置(例如，图3所示的引线框型半导体装置)的制造。
对于图3的引线框型半导体装置，通过树脂浆料202将硅芯片201固定于引线框203，通过金线206将硅芯片上的Al垫片204和引线框上的Ag镀层205进行电连接。
使用密封树脂207将这些结构进行密封，在向外部突出的引线框的端部实施外部镀层208。
上述树脂浆料虽然含有溶剂，但在使用于半导体装置的制造方法时，由于在干燥工序中通过B阶段化使大部分溶剂挥发，因此能够组装晶片接合层中空隙少、具有良好的安装可靠性的半导体装置。
另一方面，通过印刷法涂布树脂浆料后，只要对半导体封装体可靠性无影响，则也可在粘贴未进行B阶段化的半导体元件(芯片)后，进行加热，将芯片接合于支持基板。另外还可省略密封剂的固化工序。另外还可省略B阶段化和密封剂的固化工序二者。
因此，本发明所涉及的半导体装置的另一制造方法包含在基板上涂布定量的上述树脂浆料、在树脂浆料上搭载芯片、固化树脂浆料中的树脂的各工序，本发明所涉及的另一半导体装置通过包含以上各工序的制造方法来制造。
实施例
以下，通过实施例，更加具体地说明本发明。
(合成例1)
称取作为成分(a1)的CTBNX-1300×9(宇部兴产株式会社制造，含有羧基的丙烯腈聚丁二烯共聚物的商品名，丙烯腈的含量约17重量％)100重量份和作为成分(a2)的EXA-830CRP(DIC株式会社制造，通式(2)中，X为-CH2-、R1和R2为氢原子、n和m为4的双酚F型环氧化合物)10重量份，加入烧瓶中(羧酸当量∶环氧当量＝1∶1)。在145℃对其进行加热并搅拌1小时，得到作为聚合物(A)的树脂A。粘度为450Pa·s。重均分子量(Mw)为25000。
(合成例2)
除把搅拌时间从1小时变成30分钟以外，与合成例1同样地操作，得到树脂B。粘度为188Pa·s。重均分子量(Mw)为17000。
(合成例3)
除把搅拌时间从1小时变成45分钟以外，与合成例1同样地操作，得到树脂C。粘度为962Pa·s。重均分子量(Mw)为37000。
(合成例4)
除把作为成分(a2)的EXA-830CRP的量从10重量份变成2.5重量份以外，与实施例1同样地操作，得到树脂D(羧酸当量∶环氧当量＝1∶0.25)。粘度为212Pa·s。重均分子量(Mw)为18700。
(合成例5)
除把作为成分(a2)的EXA-830CRP从10重量份变成100重量份以外，与实施例1同样地操作，得到树脂E(羧酸当量∶环氧当量＝1∶10)。粘度为472Pa·s。重均分子量(Mw)为23500。
(合成例6)
除把成分(a2)从EXA-830CRP 10重量份变成R1710(双酚AD型，三井化学株式会社制造)10重量份以外，与实施例1同样地操作，得到树脂F(羧酸当量∶环氧当量＝1∶1)。粘度为412Pa·s。重均分子量(Mw)为25000。
粘度的测定方法如以下所述。
利用东机产业株式会社制造的E型粘度计，使用直径19.4mm、3°的锥体测定在25℃的树脂浆料的粘度(0.5rpm)。
分子量的测定方法为使用GPC按照以下条件进行测定。
机种：日立L6000
检测器：日立L-3300RI
数据处理器：ATT
色谱柱：Gelpack GL-R440+Gelpack GL-R450+Gelpack GL-R400M
色谱柱尺寸：
溶剂：THF
试样浓度：120mg/5ml
注入量：200μl
压力：34kgf/cm2
流量：2.05ml/min
(实施例1)
称取作为聚合物(A)(基体树脂)的树脂A80重量份，将其加入混炼机中。向其中加入利用作为溶剂(D)的醋酸卡必醇酯(CA)40重量份溶解了作为固化性树脂(B)的环氧树脂(商品名：YDCN-700-7，东都化成株式会社公司制造)4.7重量份和酚树脂(商品名：TrisP-PA-MF，本州化学工业株式会社制造)3.3重量份的溶液(热固性树脂的固体成分浓度约为40重量％)、以及固化促进剂(商品名：TPPK，东京化成工业株式会社制造)0.12重量份，进行混合。接着加入作为填料(C)的二氧化硅微粉末(商品名：Aerosil#50，日本Aerosil株式会社制造)15重量份，再加入醋酸卡必醇酯(CA)11.4重量份，搅拌、混炼1小时，得到树脂浆料。实施例1中得到的树脂浆料的固体成分浓度、粘度及触变指数如表2所示。
(实施例2～7、比较例1)
除把基体树脂、固化促进剂、填料的种类及含量如表1所示进行替换以外，与实施例1同样地操作，得到树脂浆料。实施例2～7和比较例1中得到的树脂浆料的固体成分浓度、粘度及触变指数如表2所示。
[粘接强度]
在42合金引线框上以100μm的厚度印刷实施例1～7及比较例1的树脂浆料。接着，将B阶段化温度设定为135℃并进行B阶段化。作为B阶段化条件，通过利用热风干燥机用30分钟从40℃升温至135℃，在135℃干燥30分钟后，再用30分钟使其从135℃降温至40℃，形成B阶段化状态的涂膜(晶片接合层)。之后，在140℃的热盘上利用5kg的载荷在晶片接合层上压粘5×5mm的硅芯片(厚度0.5mm)1秒钟。使用自动粘接力试验机(商品名：serie-4000，DAGE公司制造)，对其测定180℃的剪切强度(kgf/芯片)。
另外，在将B阶段化的设定温度变成140℃、145℃、150℃、155℃、160℃、165℃及170℃的条件下，分别对实施例1～7及比较例1的树脂浆料测定180℃的剪切强度(kgf/芯片)。结果如表3所示。
[空隙]
在42合金引线框上以3mm×10mm、厚100μm印刷实施例1～7及比较例1的树脂浆料。接着，将B阶段化温度设定为135℃并进行B阶段化。作为B阶段化条件，通过利用热风干燥机用30分钟从40℃升温至135℃，在135℃干燥30分钟后，再用30分钟使其从135℃降温至40℃，形成B阶段化状态的涂膜(晶片接合层)。之后，在140℃的热盘上利用5kg的载荷在晶片接合层上压粘透明的玻璃板1秒钟。对其在180℃、4MPa、90秒钟的条件下进行加热压合，根据以下的基准通过目视来评价空隙。
另外，在将B阶段化的设定温度变成140℃、145℃、150℃、155℃、160℃、165℃及170℃的条件下，分别对实施例1～7及比较例1的树脂浆料也同样地通过目视评价空隙。结果如表3所示。
A：相对于晶片接合层和玻璃基板的粘接面积，空隙面积小于5％。
B：相对于晶片接合层和玻璃基板的粘接面积，空隙面积为5％以上。
[B阶段化温度裕度]
把粘接强度为0.1MPa以上、且空隙的评价为“A”的B阶段化温度范围作为B阶段化温度裕度。结果如表3所示。B阶段化温度裕度越大越好。
通常，如果粘接强度为0.1MPa以上，则即使省略后固化的工序，也可以完成之后的组装工序，即引线接合和密封。
[250℃的受热晶片剪切强度]
在42合金引线框上以100μm厚印刷树脂浆料，通过利用热风干燥机用30分钟从40℃升温至160℃、在160℃干燥30分钟、再用30分钟使其从160℃降温至40℃来进行干燥，形成B阶段化状态的涂膜(晶片接合层)。之后，在140℃的热盘上利用5kg的载荷在晶片接合层上压粘5×5mm的硅芯片(厚度0.5mm)1秒钟。接着，在180℃的热风干燥机中加热60分钟，使其后固化。使用自动粘接力试验机(商品名：serie-4000，DAGE公司制造)，对其测定250℃的剪切强度(kgf/芯片)，作为250℃的受热晶片剪切强度。
结果如表3所示。
[耐回流焊性评价]
在涂布有防焊漆(商品名：AUS-308，太阳油墨制造(株)公司制造)的有机基板上，使用印刷机和金属掩模(掩模形状：9.0×4.0×120μm×2处)，分别印刷实施例1～7和比较例1的树脂浆料。接着，对印刷了实施例1～7和比较例1的树脂浆料的各个有机基板通过利用热风干燥机用30分钟从40℃升温至B阶段化温度裕度的最下限温度(例如，就实施例1的树脂浆料而言，为155℃)，在B阶段化温度裕度的最下限温度保持30分钟、之后用30分钟使其降温至40℃来进行干燥，形成B阶段化状态的涂膜(晶片接合层)。接下来，在140℃的热盘上利用6kg的载荷、使用日立制作所制造的芯片安装器(CM-110)在晶片接合层上压粘带有热氧化膜的硅芯片(8.8mm×8.8mm×280μmt)1秒钟，制成评价用封装体基板。使用转移成型机(藤和精机制造的多工位压力机)对所得的各个评价用封装体基板进行密封(密封剂：商品名：CEL-9240HF-SI(日立化成工业(株)制造)，密封条件：金属模具温度：180℃、压力：6.9MPa、成型时间：90秒钟)。之后，在175℃的热风干燥机中对密封材料加热固化5小时，得到10.1mm×12.2mm×1.0mmt的评价用BOC封装体。
将所得的评价用BOC封装体分别在85℃/85％RH/168小时及85℃/60％RH/168小时的条件下进行吸湿处理后，在以评价用BOC封装体的最高表面温度达到260℃的方式进行设定的IR回流焊炉(ATMURA制造)中重复通过3次。接着，对于该评价用BOC封装体，使用超声波扫描显像装置(SAT：Scanning Automatic Tomograph日立制作所制造HYE-FOCUS)，目视确认有无晶片接合层的剥落或气泡，按照以下基准评价耐回流焊性。结果如表3所示。
Level 1：在85℃/85％RH/168小时及85℃/60％RH/168小时的任一条件下，均无晶片接合层的剥落或气泡。
Level 2：在85℃/60％RH/168小时的条件下无晶片接合层的剥落或气泡，但在85℃/85％RH/168小时的条件下有晶片接合层的剥落或气泡。
意味着Level 1比Level 2耐回流焊性优异。
Figure BPA00001397852800211
本发明的晶片接合用树脂浆料在B阶段化的宽的温度范围内与芯片的粘接强度优异，同时还能够减少与芯片之间的空隙，并且即使在焊锡回流焊工序中其受热晶片剪切强度和耐回流焊性也优异。
利用本发明，能够提供通过印刷法能够容易地对需要在比较低的温度粘贴半导体芯片的基板进行供给和涂布的晶片接合用树脂浆料。
除已述的以外，还应该注意可以在上述实施方式中加入不脱离本发明的新型且有利的特征的各种修正或变更。因此，如上所述的全部修正或变更均包含在附上的权利要求的范围内。
符号说明
2基板，4晶片接合层，6半导体芯片，8配线图案，10绝缘层，12焊球，14引线，16密封材料，100半导体装置，101基板，102金属掩模，103涂刷器，104晶片接合用树脂浆料，105晶片接合层(B阶段化状态)，106热源，107芯片，108晶片接合层(完全固化状态)，109引线，110金属模具，111挤出机，112密封材料，201硅芯片，202晶片接合用树脂浆料，203引线框，204 Al垫片，205 Ag镀层，206金线，207密封树脂，208外部镀层

Claims (8)

1.一种晶片接合用树脂浆料，含有：使具有羧基的丁二烯的聚合物(a1)和具有环氧基的化合物(a2)反应而得到的聚合物(A)、热固性树脂(B)以及填料(C)。
2.如权利要求1所述的晶片接合用树脂浆料，进一步含有溶剂(D)。
3.如权利要求1所述的晶片接合用树脂浆料，进一步含有固化促进剂(E)。
4.如权利要求1所述的晶片接合用树脂浆料，其中，所述使具有羧基的丁二烯的聚合物(a1)和具有环氧基的化合物(a2)反应而得到的聚合物(A)的重均分子量为15000～70000。
5.一种半导体装置的制造方法，包括：(1)在基板上涂布权利要求1～3的任一项所述的晶片接合用树脂浆料的工序；(2)对所述树脂浆料进行B阶段化的工序；(3)在进行了B阶段化的所述树脂浆料上搭载半导体芯片的工序。
6.一种半导体装置，由权利要求5所述的半导体装置的制造方法得到。
7.一种半导体装置的制造方法，包括：(1)在基板上涂布权利要求1～3的任一项所述的晶片接合用树脂浆料的工序；(2)在所述树脂浆料上搭载半导体芯片的工序；(3)使用密封剂对所述半导体芯片进行密封的工序。
8.一种半导体装置，由权利要求7所述的半导体装置的制造方法得到。
CN2010800041529A 2009-03-23 2010-03-10 晶片接合用树脂浆料、使用该浆料的半导体装置的制造方法及半导体装置 Pending CN102272908A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107134408A (zh) * 2016-02-26 2017-09-05 台湾积体电路制造股份有限公司 半导体制造方法及其相关的半导体制造系统
CN107541168A (zh) * 2017-07-31 2018-01-05 常州聚盛节能工程有限公司 一种建筑结构胶及其制备方法
CN107709502A (zh) * 2015-06-29 2018-02-16 拓自达电线株式会社 散热材料粘接用组合物、带粘接剂的散热材料、嵌入基板和其制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6372626B2 (ja) * 2016-06-02 2018-08-15 日立化成株式会社 樹脂組成物及び積層体の製造方法
EP3489991A4 (en) * 2016-08-22 2020-10-21 Senju Metal Industry Co., Ltd METAL Sintered Bonding Body and Chip Bonding Method
WO2020217404A1 (ja) * 2019-04-25 2020-10-29 日立化成株式会社 ドルメン構造を有する半導体装置及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1328588A (zh) * 1998-10-06 2001-12-26 汉克尔特罗森公司 抗冲击环氧树脂组合物
CN1400993A (zh) * 2000-02-15 2003-03-05 日立化成工业株式会社 粘接剂组合物及其制造方法、使用它的粘接薄膜、半导体装载用基板及半导体装置
CN1664000A (zh) * 2004-03-02 2005-09-07 田村化研株式会社 热固性树脂组合物、树脂薄膜以及制品
JP2009019171A (ja) * 2007-07-13 2009-01-29 Kyocera Chemical Corp ダイボンディングペースト

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1328588A (zh) * 1998-10-06 2001-12-26 汉克尔特罗森公司 抗冲击环氧树脂组合物
CN1400993A (zh) * 2000-02-15 2003-03-05 日立化成工业株式会社 粘接剂组合物及其制造方法、使用它的粘接薄膜、半导体装载用基板及半导体装置
CN1664000A (zh) * 2004-03-02 2005-09-07 田村化研株式会社 热固性树脂组合物、树脂薄膜以及制品
JP2009019171A (ja) * 2007-07-13 2009-01-29 Kyocera Chemical Corp ダイボンディングペースト

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107709502A (zh) * 2015-06-29 2018-02-16 拓自达电线株式会社 散热材料粘接用组合物、带粘接剂的散热材料、嵌入基板和其制造方法
US11236227B2 (en) 2015-06-29 2022-02-01 Tatsuta Electric Wire & Cable Co., Ltd. Heat dissipation material adhering composition, heat dissipation material having adhesive, inlay substrate, and method for manufacturing same
CN107134408A (zh) * 2016-02-26 2017-09-05 台湾积体电路制造股份有限公司 半导体制造方法及其相关的半导体制造系统
CN107541168A (zh) * 2017-07-31 2018-01-05 常州聚盛节能工程有限公司 一种建筑结构胶及其制备方法

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