CN102263489A - Electric power switching device and its abnormal test method - Google Patents
Electric power switching device and its abnormal test method Download PDFInfo
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- CN102263489A CN102263489A CN2011101195323A CN201110119532A CN102263489A CN 102263489 A CN102263489 A CN 102263489A CN 2011101195323 A CN2011101195323 A CN 2011101195323A CN 201110119532 A CN201110119532 A CN 201110119532A CN 102263489 A CN102263489 A CN 102263489A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
- H02H7/1225—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters responsive to internal faults, e.g. shoot-through
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
A power conversion apparatus and a malfunction detection method thereof are provided to prevent a failure of one IGBT(Insulated Gate Bipolar Transistor) device from influencing the damage of the other IGBT device, by detecting abnormality of a gate driving circuit and the IGBT device. A power conversion apparatus uses a plurality of voltage controlled semiconductor devices. A pulse generation part(200) generates a command pulse to control on/off of the voltage controlled semiconductor device, on the basis of a command from a control circuit. A gate driving part(400a) receives the command pulse, and controls on/off operation of the voltage controlled semiconductor device by applying a voltage according to the command pulse as a gate voltage, and outputs a gate feedback signal indicating the on/off state of the voltage controlled semiconductor device. A failure detection part(300) detects a failure, by receiving the command pulse and the gate feedback signal. The failure detection part includes a detection part and a signal generation part for generating a signal to stop the command pulse for the voltage controlled semiconductor device.
Description
The application is to be that August 9, application number in 2007 are dividing an application of 2007101407636 patent application the applying date, and the invention and created name of this application is power-converting device and method for detecting abnormality thereof.
Technical field
The voltage that the present invention relates to a kind of control input that can be by imposing on element be controlled conducting state and use a plurality of voltage driven type semiconductor elements to carry out the power-converting device of power converter, particularly has the power-converting device and the method for detecting abnormality thereof of the unusual mechanism that detects the voltage driven type semiconductor element.
Background technology
Representational in the voltage driven type semiconductor element have an igbt (InsulatedGate Bipolar Transistor:IGBT), is extensive use of in power-converting device.Below, use IGBT as referring to all language of voltage driven type semiconductor element in this specification, describe.
As the protection of power-converting device, what extensively carry out is to detect the overcurrent that load short circuit because of power-converting device etc. is produced, and cuts off the mode that overcurrent is protected by IGBT self.For example, the saturation voltage when the collector voltage of IGBT detects super-high-current rises, and makes gate voltage descend, and cuts off overcurrent by IGBT self, protects.In addition, the current detecting emission electrode that special use is set in IGBT that also has detects overcurrent, makes gate voltage descend, and cuts off overcurrent by IGBT self, protects.
But, detect in the mode of rising of saturation voltage, if do not circulate super-high-current, collector voltage just can not rise, and therefore will inevitably detect delay.In addition, because the collector voltage of high pressure is connected with grid (gate) drive circuit, so circuit structure becomes complicated, and uses because of the on/off action of the IGBT collector voltage of change sharp, so sometimes misoperation can take place.In addition, the mode of current detecting with emitter is set, need in IGBT circuit self, electrode be set, in the power-converting device that uses general purpose I GBT, can't use.
In the patent documentation 1, a kind of fault detection method of insulated gate formula semiconductor element is disclosed, detect the gate current of insulated gate formula semiconductor element, from the rising signals of gate current, obtain the time that is equivalent to conducting, should the time and gate command signal compare, detect both inconsistent, by coming to detect rapidly the fault of element like this.
[patent documentation 1] spy opens the 2002-281736 communique
But, in the former mode, all adopt the mode of cutting off overcurrent by IGBT self, therefore losing under the situation of failure of current function the problem that existence can't be protected because of the fault of IGBT self etc.And then, because of the misoperation of grid drive circuit, fault etc., and IGBT has been carried out under the situation of wrong on/off control, also there is the problem that can't protect.
In addition, in the power-converting device that a plurality of IGBT constituted, the reason of the overcurrent of other IGBT elements of the failure of current of 1 IGBT element failure becoming, existence can feed through to the problem of the breakage of a plurality of IGBT elements.
Summary of the invention
The present invention is based on above problem; purpose is to provide a kind of power-converting device; in the power-converting device that this a plurality of IGBT elements are constituted; have the unusual of the unusual and IGBT element that detects the grid drive circuit reliably and protect, feed through to the defencive function of the damage of other IGBT elements by the fault that prevents 1 IGBT element like this.
The present invention has: the control and treatment of carrying out power-converting device, according to instruction from control circuit, produce to specify pulse generation portion to the command pulse of the on/off state of each switch element (the voltage-type driving elements of following representative IGBT etc.), corresponding to the state of the command pulse of being imported, change the size of the gate voltage of the grid that imposes on IGBT, by like this IGBT being carried out a plurality of grid drive divisions, the IGBT that is connected with each grid drive division of on-off action and the unusual abnormity detection portion that detects grid driving mechanism and IGBT.
Specifically, grid drive division (grid drive circuit) has: corresponding to the state of command pulse, change imposes on the grid drive division of size of gate voltage of the grid of IGBT; Detect gate voltage, its size is compared with threshold value, and the output expression is greater than (H) of threshold value or less than the gate voltage judging part of the signal of (L) of threshold value; Detect gate current, its size is compared with threshold value, and the output expression is greater than (H) of threshold value or less than the gate current judging part of the signal of (L) of threshold value; The output of input gate voltage judging part and the output of gate current judging part, the grid feedback generating unit and the power supply unit of the grid feedback signal of the on/off state of output expression IGBT.
In addition, abnormity detection portion (abnormal detection circuit), input is exported to the command pulse of each grid drive division by pulse generation portion, and the grid feedback signal exported of a plurality of grid drive divisions that are connected with pulse generating circuit, and whether the decision instruction pulse is consistent with each grid feedback signal.Detected under the unusual situation instruction of the signal (suppressing (suppress) signal) that output allows pulse generation portion for example all command pulses are made as to end in the result who judges.By like this, each IGBT that constitutes power-converting device becomes cut-off state, and power-converting device stops.
Like this; among the present invention; for example when abnormality detection; all end action among all IGBT of formation power-converting device; even therefore for example 1 IGBT does not carry out failure of current; other IGBT that are arranged in this current path also become cut-off state, cut off electric current, therefore can protect other IGBT.
According to the present invention, in the power-converting device that a plurality of IGBT constituted, detect the unusual of IGBT, and for example in all IGBT that constitute power-converting device, all end action, by like this, can prevent that the fault of 1 IGBT element from feeding through to the breakage of other IGBT elements.In addition, when abnormality detection, end action,, for example also all IGBT can be made as cut-off state reliably, can protect other IGBT even therefore have under the unusual situation at grid driving mechanism or IGBT self by impulse mechanism.
Here, the grid drive division carries out following action: when command pulse is the H level, apply positive fixed voltage for the grid of IGBT, apply the action of negative fixed voltage for the L level time.Therefore, under the not corresponding situation of the level of the gate voltage and instruction pulse of IGBT, think unusual or IGBT unusual of grid driving mechanism.In addition, in general, voltage driven type semiconductor elements such as IGBT, in the short time after having changed the gate voltage that is applied, circulation is used for gate current that gate capacitance is discharged and recharged, and does not circulate when other stable.Therefore, although do not allowing the gate voltage that is applied change, under the situation of the gate current more than the certain hour that circulated, can judge it is the abnormality of IGBT.
In order to utilize the characteristic of aforesaid IGBT; detect unusual; and gate voltage judging part and gate current judging part are set in the grid drive division; the inconsistent situation of gate voltage and instruction pulse except IGBT; therefore can also detect the inconsistent of gate current and instruction pulse, can detect unusual or IGBT element unusual of grid drive division reliably and protect.
Description of drawings
Fig. 1 is the block diagram of the overall structure example of expression one embodiment of the present invention.
Fig. 2 is the key diagram of the operating characteristics example of the gate voltage judging part of expression one embodiment of the present invention.
Fig. 3 is the key diagram of the operating characteristics example of the gate current judging part of expression one embodiment of the present invention.
Fig. 4 is the key diagram of the structure example of the grid feedback generating unit of expression one embodiment of the present invention.
Fig. 5 is the block diagram of the structure example of the abnormal detection circuit of expression one embodiment of the present invention.
Fig. 6 is the key diagram of the action example just often of expression one embodiment of the present invention.
The key diagram of action example (1) of Fig. 7 during for expression one embodiment of the present invention unusual.
The key diagram of action example (2) of Fig. 8 during for expression one embodiment of the present invention unusual.
Among the figure: 100-control circuit, 200-pulse generating circuit, 300-abnormal detection circuit, the 301-oscillating circuit, 302-counter, 303-exclusive disjunction circuit, 304-XOR circuit, 400-grid drive circuit, 401-grid drive division, the 402-power supply unit, 403-gate voltage judging part, 404-gate current judging part, 405-grid feedback generating unit, the 406-gate resistance, 500-IGBT
Embodiment
Below, the contrast accompanying drawing describes one embodiment of the present invention.
Fig. 1 is the block diagram of the structure example of the power-converting device of expression one embodiment of the present invention.Contrast Fig. 1 describes the overall structure of the execution mode of this example.
This example has: the control circuit 100 of the action of control power-converting device; According to the indication of control circuit 100, the command pulse generating mechanism that instructs the command pulse of on/off of IGBT to take place is a pulse generating circuit 200; By pulse generating circuit 200 input instruction pulses, corresponding to the state of command pulse, change the size of the gate voltage of the grid that imposes on IGBT, be grid drive circuit 400a by the grid driving mechanism that is switched on or switched off action that carries out IGBT like this; IGBT element 500a; And detect the unusual of grid drive circuit or IGBT, when unusual the generation, it is abnormal detection circuit 300 that output is used for the abnormality detection mechanism of the signal SUP that pulse generation with pulse generating circuit 200 stops.In addition, power-converting device is by a plurality of IGBT (500a～500n) and a plurality of grid drive circuit (400a～400n) constitute, but, other have been omitted because its structure and action are all identical, so only show 1 IGBT500a and grid drive circuit 400a thereof among Fig. 1.
Grid drive circuit 400a has: the command pulse RPa that input is taken place by pulse generating circuit 200, and apply voltage corresponding to command pulse RPa as gate voltage, the grid drive division 401a of the on/off action of control IGBT500a; The power supply unit 402a of needed power supply in each one of grid drive circuit 400a is provided; Input gate voltage Vga, the gate voltage judging part 403a that carries out the judgement of gate voltage; Input gate current Iga, the gate current judging part 404a that carries out the judgement of gate current; Be transfused to gate voltage feedback pulse VFBa that is exported by gate voltage judging part 403a and the gate current feedback pulse IFBa that is exported by gate current judging part 404a, grid feedback generating unit 405a and the gate resistance 406a of output grid feedback pulse FBpA.
Next, the action to grid drive circuit 400a each several part describes.
Grid drive division 401a, the command pulse RPa that input is taken place by pulse generating circuit 200, at command pulse RPa is under the situation of H level, apply positive fixed voltage for the grid of IGBT500a, carry out turn-on action, at command pulse RPa is under the situation of L level, applies negative fixed voltage, ends action.
The gate voltage Vga of gate voltage judging part 403a input IGBT500a produces gate voltage feedback pulse VFBa.The operating characteristics of gate voltage judging part 403a has been shown among Fig. 2.In this example, set fixing decision level Vth in order to judge gate voltage, under the situation of gate voltage Vga less than Vth of being imported (Vga＜Vth), be judged as the L level, under Vga is situation more than the Vth (Vga 〉=Vth), be judged as the H level, generate gate voltage feedback pulse VFBa and output corresponding to this judged result.
Gate current judging part 404a, the gate current Iga of input IGBT500a produce gate current feedback pulse IFBa as the voltage of gate resistance 406a.The operating characteristics of gate current judging part 404a has been shown among Fig. 3.In this example, set fixing judgement grade Ith in order to judge gate current, under the situation of absolute value less than Ith of the gate current Iga that is imported (Ith＜Iga＜+Ith), be judged as the L level, under the absolute value of gate current Iga is situation more than the Ith (Iga≤-Ith, Iga 〉=+Ith), be judged as the H level, generate gate current feedback pulse IFBa and output corresponding to this judged result.
Next the action to grid feedback generating unit 405a describes.The structure example of this routine grid feedback generating unit 405a has been shown among Fig. 4.Among the grid feedback generating unit 405a, be transfused to the gate voltage feedback pulse VFBa that is exported by gate voltage judging part 403a, with the gate current feedback pulse IFBa that is exported by gate current judging part 404a, get the XOR of the pulse of being imported, and be grid feedback pulse FBPa output as the signal of H level or L level the result.Grid feedback pulse FBPa is used for the on/off state notifying of IGBT500a is given the signal of abnormal detection circuit 300.About the detailed action of grid feedback generating unit 405a, will use Fig. 6～Fig. 8 to describe.
The structure example of the abnormal detection circuit 300 in this example has been shown among Fig. 5.With reference to Fig. 5, the structure and the action of abnormal detection circuit 300 described.
Here, counter empties input CLR and allows input EN with the counting action, has been transfused to the output signal of exclusive disjunction circuit 303.Exclusive disjunction circuit 303 is transfused to the result of XOR circuit 304a～304n, is under the situation of H level in any of the result of this XOR circuit 304a～304n, and the output signal of exclusive disjunction circuit 303 becomes the H level.Therefore, be under the situation of H level in the output signal of exclusive disjunction circuit 303, can judge in any of instruction pulse RPa～RPn and grid feedback pulse FBPa～FBPn inconsistent state has taken place.
Command pulse and the inconsistent state of grid feedback pulse have the inconsistent situation of on/off state of command pulse and IGBT.In addition, in general, among the IGBT, in the short time after having changed the gate voltage that is applied, flow through and be used for gate current that gate capacitance is discharged and recharged, and when other constant, do not circulate.Therefore, in the generation of the gate current of the variation that is accompanied by gate voltage, the inconsistent of command pulse and grid feedback pulse can be taken place in some cases.But, under this inconsistent state has continued situation that certain hour do not have to restore, can be judged as and to have sent that certain is unusual.Therefore, be provided with the higher limit of timer in this example as the threshold value that is used for judging unusual generation.Exclusive disjunction circuit 303 be output as the H level during in, timer 302 continues counting, if the state continuance of H level certain hour, count value will reach higher limit, counter overflows output OVF and becomes the H level.Counter overflows the output signal SUP output of output OVF as paired pulses generation circuit 200, be transfused to the pulse generating circuit 200 of the output signal SUP of H level, stop all command pulses, each IGBT that consequently constitutes power-converting device becomes cut-off state, and power-converting device stops.
Like this, in this example, detect reliably unusually, and pulse generating circuit 200 stops all command pulses, IGBT is made as cut-off state, by protecting sound IGBT like this by abnormal detection circuit 300.
In addition, be provided with oscillating circuit and counter in this example as being used for detecting the mechanism that the inconsistent state between command pulse and the grid feedback pulse has continued certain hour, but also can be other mechanisms, be continuously the time of H level state as long as can judge the output of exclusive disjunction circuit 303, and the situation that has exceeded threshold value notified just passable.
Next, contrast Fig. 6～Fig. 8 describes the action of this example.Fig. 6 shows action just often, and Fig. 7, Fig. 8 show the action when unusual.
At first, the action that aligns often with reference to Fig. 6 describes.Among Fig. 6, output signal, the output signal of exclusive disjunction circuit 303, the count value of timer 302 and the output signal SUP of abnormal detection circuit 300 of gate voltage Vga, the gate current Iga of the command pulse RPa, the IGBT500a that are exported of indicating impulse generation circuit 200, gate voltage feedback pulse VFBa that gate voltage judging part 403a is exported, gate current feedback pulse IFBa that gate current judging part 404a is exported, grid feedback pulse FBPa, XOR circuit 304a that grid feedback generating unit 405a is exported from top to bottom.
Among the t1, when command pulse RPa became the H level from the L level, gate voltage Vga became+V from-V.At this moment, for the gate capacitance to IGBT500a is charged, positive gate current Iga circulates.Because gate voltage Vga has become+V from-V, therefore become the moment more than the decision level Vth at gate voltage Vga, the output signal of gate voltage judging part 403a is that gate voltage feedback pulse VFBa becomes the H level from the L level.
In addition, in during more than gate current Iga circulation fixed value+Ith, the output signal of gate current judging part 404a is that gate current feedback pulse IFBa becomes the H level, and after charge end and gate current Iga had become less than fixed value+Ith, gate current feedback pulse IFBa became the L level.
The XOR that grid feedbacks generating unit 405a gets gate voltage feedback pulse VFBa and gate current feedback pulse IFBa, so as the grid feedback pulse FBPa of output signal as shown in the figure.
The XOR circuit 304a of abnormal detection circuit 300, input instruction pulse RPa and grid feedback pulse FBPa also get XOR, so its output signal as shown in the figure.In addition, as the output of the XOR circuit 300 of input also as shown in the figure with the output signal of XOR circuit 304a.Here, show the XOR circuit as an example and be 1 situation, therefore become the identical output of output signal with XOR circuit 304a.
Among the t2, when command pulse RPa became the L level from the H level, gate voltage Vga became-V from+V.At this moment, for the gate capacitance to IGBT500a is discharged, the gate current Iga that circulation is negative.Because gate voltage Vga has become-V from+V, therefore when gate voltage Vga became lower than decision level Vth, the output signal of gate voltage judging part 403a was that gate voltage feedback pulse VFBa becomes the L level from the H level.
In addition, gate current Iga become below certain value-Ith during in, the output signal of gate current judging part 404a is that gate current feedback pulse IFBa becomes the H level, and after charge end and gate current Iga had become greater than fixed value-Ith, gate current feedback pulse IFBa became the L level.
Carry out same action later on, the output signal SUP of abnormal detection circuit 300 can not become the H level.
Next, the action during to unusual take place describes with reference to Fig. 7.In addition, the same with shown in Fig. 6 of the signal shown in Fig. 7.
Among Fig. 7, about t3 constantly in command pulse RPa become action under the situation of L level from the H level, identical with the action just often shown in Fig. 6.
Here, establish t4 and among the IGBT500a fault has taken place constantly.In case break down among the IGBT500a, gate current Iga just flows out.This electric current is by through the collector electrode of IGBT, the feedback capacity between grid, and perhaps collector electrode and grid become conducting state, and collector current flows to grid, or becomes conducting state between grid, emitting stage, and IGBT's such as circulation gate current is caused unusually.
Consequently, in case gate current Iga becomes below fixed value-Ith, then the output signal of gate current judging part 404a is that gate current feedback pulse IFBa just becomes the H level, and the output signal of grid feedback generating unit 405a is that grid feedback pulse FBPa also becomes the H level.And input instruction pulse RPa and grid feedback pulse FBPa and the XOR circuit 304a that gets the abnormal detection circuit 300 of XOR also become the H level, and the output of XOR circuit 303 too.
The output signal of exclusive disjunction circuit 303 be the H level during in, counter 302 increases count values, if more than the H level state certain time of the output of exclusive disjunction circuit 303, just the count value of t5 hour counter 302 reaches higher limit.Consequently, the output signal SUP of abnormal detection circuit 300 becomes the H level, judges this moment to have taken place unusually.
Be transfused to the pulse generating circuit 200 of the output signal SUP of abnormal detection circuit 300, stop pulse takes place, and command pulse RPa～RPn becomes the L level.Therefore IGBT500a～IGBT500n becomes cut-off state, and power-converting device stops action.By like this, comprise that all IGBT that unusual IGBT has taken place stop, therefore can cut off overcurrent, can protect normal IGBT.
Next, with reference to Fig. 8, the action during to other unusual generations describes.In addition, the same with shown in Fig. 6 of the signal shown in Fig. 8.
Here, establish t6 grid drive division 401a misoperation in the moment, produced the gate voltage Vga of not corresponding command pulse RPa.By like this, the output of gate voltage judging part 403a is that gate voltage feedback pulse VFBa just becomes the H level, and the output signal of grid feedback generating unit 405a is that grid feedback pulse FBPa also becomes the H level.The result is the same with action illustrated in fig. 7 to move, and the output of the exclusive disjunction circuit 303 of abnormal detection circuit 300 also becomes the H level, t7 constantly in the count value of counter 302 reach higher limit.Afterwards, the output signal SUP of abnormal detection circuit 300 becomes the H level, and pulse generating circuit 200 stop pulses take place, and by like this, IGBT500a～IGBT500n becomes cut-off state, and power-converting device stops action.
In addition, except above-mentioned unusual routine, in power supply unit 402a, taken place under the unusual situation, it is unusual that any of each circuit part all becomes.Consequently grid feedback pulse FBPa becomes and just often different waveforms, so detects in the abnormal detection circuit 300 unusually, and power-converting device stops action.And then, in gate voltage judging part 403a, gate current judging part 404a, grid feedback generating unit 405a, having taken place under the unusual situation, grid feedback pulse FBPa also becomes and just often different waveforms, is detected.
Like this; in any of IGBT element and the grid drive circuit that drives the IGBT element, taken place under the unusual situation in this example; can both detect unusual reliably; when abnormality detection; the pulse of stop pulse generation circuit is by protecting power-converting device and IGBT element reliably like this.
Claims (5)
1. power-converting device uses a plurality of voltage type semiconductor elements and constitutes,
Have:
Pulse generation portion according to the instruction from control circuit, is used for controlling the command pulse of the on/off of above-mentioned voltage type semiconductor element;
The grid drive division, import above-mentioned command pulse, by applying as gate voltage, control the on/off action of above-mentioned voltage type semiconductor element, the grid feedback signal of the on/off state of the above-mentioned voltage type semiconductor element of output expression corresponding to the voltage of command pulse; And
Abnormity detection portion is imported above-mentioned command pulse and above-mentioned grid feedback signal, detects unusually,
Above-mentioned abnormity detection portion has: detect the above-mentioned command pulse imported and the inconsistent test section between the above-mentioned grid feedback signal; And detect this inconsistent certain hour that continued, under the situation that has continued certain hour,, be used for stopping signal generation to the signal of the command pulse of voltage type semiconductor element to above-mentioned pulse generation portion.
2. power-converting device according to claim 1 is characterized in that,
Above-mentioned grid drive division has:
The 1st judging part, the gate voltage of the voltage type semiconductor element of input controlling object, the height of judgement voltage; And
The 2nd judging part, the gate current of the voltage type semiconductor element of input controlling object is judged having or not of electric current,
According to the state of above-mentioned gate voltage and gate current, the state of above-mentioned voltage type semiconductor element is exported as the grid feedback signal, detect unusual.
3. the method for detecting abnormality of a power-converting device, this method for detecting abnormality is the command pulse that the input pulse generating unit is taken place, by applying as gate voltage corresponding to the voltage of command pulse, control the grid drive division of the on/off action of voltage type semiconductor element, and the method for detecting abnormality of the voltage type semiconductor element of being controlled by above-mentioned grid drive division
The grid feedback signal of the on/off state of more above-mentioned command pulse and the above-mentioned voltage type semiconductor element of expression detects both inconsistent, by detecting this inconsistent certain hour that continued, detects unusual.
4. the method for detecting abnormality of power-converting device according to claim 3 is characterized in that,
Judge the inconsistent method of grid feedback signal of above-mentioned command pulse and the on/off state of the above-mentioned voltage type semiconductor element of expression,
Detect the gate voltage and the gate current of above-mentioned voltage type semiconductor element, under gate voltage is situation more than the fixed value, judgement is the H level, under the situation less than fixed value, judgement is the L level, under the absolute value of gate current is situation more than the fixed value, judgement is the H level, under the situation less than fixed value, judgement is the L level
In any of gate voltage and gate current is under the situation of H level, and judgement is the H level, gets the XOR of this judged result and above-mentioned command pulse, is under the situation of H level in the result, and it is inconsistent to judge both.
5. the method for detecting abnormality of power-converting device according to claim 3 is characterized in that,
During above-mentioned command pulse and above-mentioned grid feedback signal are inconsistent, with fixed cycle Measuring Time process, measure number of times by it and become more than the fixed value, thereby judge that inconsistent state has continued certain hour.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006225600A JP4338721B2 (en) | 2006-08-22 | 2006-08-22 | Power conversion apparatus and abnormality detection method thereof |
| JP2006-225600 | 2006-08-22 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101407636A Division CN101132145B (en) | 2006-08-22 | 2007-08-09 | Electric power switching device and its abnormal test method |
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| Publication Number | Publication Date |
|---|---|
| CN102263489A true CN102263489A (en) | 2011-11-30 |
| CN102263489B CN102263489B (en) | 2013-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009102063146A Expired - Fee Related CN101707432B (en) | 2006-08-22 | 2007-08-09 | Electric power switching device and abnormal test method thereof |
| CN2011101195323A Expired - Fee Related CN102263489B (en) | 2006-08-22 | 2007-08-09 | Electric power switching device and its abnormal test method |
| CN2007101407636A Expired - Fee Related CN101132145B (en) | 2006-08-22 | 2007-08-09 | Electric power switching device and its abnormal test method |
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| CN2009102063146A Expired - Fee Related CN101707432B (en) | 2006-08-22 | 2007-08-09 | Electric power switching device and abnormal test method thereof |
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| JP (1) | JP4338721B2 (en) |
| KR (1) | KR101083188B1 (en) |
| CN (3) | CN101707432B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113690853A (en) * | 2021-08-11 | 2021-11-23 | 成都启臣微电子股份有限公司 | Output voltage feedback end abnormal state detection protection circuit and main control chip |
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| JP5373457B2 (en) * | 2009-04-08 | 2013-12-18 | 株式会社日立製作所 | Abnormality detection method for power converter |
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| JP5907199B2 (en) * | 2014-03-12 | 2016-04-26 | トヨタ自動車株式会社 | Semiconductor device and method for controlling semiconductor device |
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-
2007
- 2007-08-03 KR KR1020070078250A patent/KR101083188B1/en active IP Right Grant
- 2007-08-09 CN CN2009102063146A patent/CN101707432B/en not_active Expired - Fee Related
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113690853A (en) * | 2021-08-11 | 2021-11-23 | 成都启臣微电子股份有限公司 | Output voltage feedback end abnormal state detection protection circuit and main control chip |
| CN113690853B (en) * | 2021-08-11 | 2024-04-30 | 成都启臣微电子股份有限公司 | Output voltage feedback end abnormal state detection protection circuit and main control chip |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4338721B2 (en) | 2009-10-07 |
| KR20080018099A (en) | 2008-02-27 |
| CN101132145B (en) | 2011-06-22 |
| JP2008054375A (en) | 2008-03-06 |
| CN101132145A (en) | 2008-02-27 |
| CN101707432A (en) | 2010-05-12 |
| KR101083188B1 (en) | 2011-11-11 |
| CN101707432B (en) | 2013-01-02 |
| CN102263489B (en) | 2013-04-10 |
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