CN110244210B - Breakdown detection method for IGBT unit - Google Patents

Breakdown detection method for IGBT unit Download PDF

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Publication number
CN110244210B
CN110244210B CN201910601552.0A CN201910601552A CN110244210B CN 110244210 B CN110244210 B CN 110244210B CN 201910601552 A CN201910601552 A CN 201910601552A CN 110244210 B CN110244210 B CN 110244210B
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unit
current
igbt
igbt2
igbt1
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CN110244210A (en
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谢美珍
郑昕斌
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Fuzhou Xicheng Electronic Co ltd
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Fuzhou Xicheng Electronic Co ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2601Apparatus or methods therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2608Circuits therefor for testing bipolar transistors
    • G01R31/261Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor

Abstract

The invention relates to the technical field of IGBT breakdown detection, in particular to a breakdown detection method for an IGBT unit, which comprises the steps of obtaining the current change times of the IGBT unit in a working state in one period, comparing the obtained current change times with the preset basic current change times, judging whether the IGBT unit in the working state breaks down or not by judging whether the obtained current change times are the same as the preset basic current change times or not, rapidly detecting the breakdown condition of high-side drive of the IGBT unit, and detecting the breakdown condition of the high-side drive of the IGBT unit within 300 ms; and moreover, working state switching and driving mode switching are not required, the breakdown detection efficiency is improved, and the power stability is high.

Description

Breakdown detection method for IGBT unit
Technical Field
The invention relates to the technical field of IGBT breakdown detection, in particular to a breakdown detection method for an IGBT unit.
Background
An Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate field effect Transistor), and has the advantages of both high input impedance of MOSFET and low on-state voltage drop of GTR. The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is large; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT integrates the advantages of the two devices, and has small driving power and reduced saturation voltage. The method is very suitable for being applied to the fields of current transformation systems with direct-current voltage of 600V or more, such as alternating-current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.
Breakdown of the IGBT during operation is a common phenomenon, and there are many factors causing the breakdown of the IGBT, for example: the IGBT may break down due to overcurrent, overvoltage, overtemperature, short circuit, and the like. With the development of semiconductor switch technology, semiconductor switch devices are widely applied to electric welding machines, frequency converters, SVG, flexible direct current transmission equipment and the like. Damage to semiconductor devices (e.g., IGBTs) often inevitably occurs during equipment production, commissioning, transportation, field repair, or rework. Under the condition of device damage, once the equipment is powered on and operated, the IGBT is extremely easy to be directly damaged, and the whole equipment can be completely or partially exploded in severe cases. It is therefore particularly desirable to provide a method which can be used to detect IGBT breakdown.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a method capable of efficiently detecting breakdown of a TGBT unit is provided.
In order to solve the technical problems, the invention adopts the technical scheme that:
a breakdown detection method for an IGBT cell, comprising the steps of:
s1, presetting basic current change times;
s2, acquiring the current change times of the IGBT unit in the working state in one period;
s3, judging whether the current change times of the IGBT unit in the working state in one period is equal to the basic current change times or not;
and S4, if not, judging that the IGBT unit in the working state has breakdown.
The invention has the beneficial effects that:
according to the scheme, the current change times of the IGBT unit in the working state in one period are obtained, the obtained current change times are compared with the preset basic current change times, whether the IGBT unit in the working state is broken down or not is judged by judging whether the obtained current change times are the same as the preset basic current change times or not, the breakdown condition of high-side drive of the IGBT unit can be rapidly detected, and the breakdown condition of the high-side drive of the IGBT unit can be detected within 300 ms; moreover, working state switching and driving mode switching are not needed, the breakdown detection efficiency is improved, and the power stability is high; the breakdown detection method designed by the scheme can be used for directly performing breakdown detection on the IGBT unit in the working state, is high in detection accuracy, cannot influence the normal work of the IGBT unit, and can also stop outputting in time and feed back fault information to a server to wait for maintenance of a worker when the fault occurs.
Drawings
Fig. 1 is a flow chart of the steps of a breakdown detection method for an IGBT cell according to the present invention;
fig. 2 is a waveform diagram of current output without breakdown for an IGBT cell duty cycle of 48% according to one method of breakdown detection for an IGBT cell of the present invention;
fig. 3 is a waveform diagram of current output with a shoot through condition at an IGBT cell duty cycle of 48% for a shoot through detection method for an IGBT cell according to the present invention;
fig. 4 is a waveform diagram of current output with a shoot through condition at an IGBT cell duty cycle of 48% for a shoot through detection method for an IGBT cell according to the present invention;
fig. 5 is a waveform diagram of current output for a no-breakdown condition at an IGBT cell duty cycle of 60% according to one method of breakdown detection for an IGBT cell of the present invention;
fig. 6 is a waveform diagram of current output with a shoot through condition at an IGBT cell duty cycle of 60% for a shoot through detection method for an IGBT cell according to the present invention;
fig. 7 is a waveform diagram of current output with a shoot through condition at an IGBT cell duty cycle of 60% for a shoot through detection method for an IGBT cell according to the present invention;
fig. 8 is a waveform diagram of current output for a no-breakdown condition at an IGBT cell duty cycle of 98% according to one method of breakdown detection for an IGBT cell of the present invention;
fig. 9 is a waveform diagram of current output with a shoot through condition at an IGBT cell duty cycle of 98% according to one method of the present invention for shoot through detection of an IGBT cell;
fig. 10 is a waveform diagram of current output with a breakdown condition at an IGBT cell duty cycle of 98% according to one method of breakdown detection for an IGBT cell of the present invention.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
The most key concept of the invention is as follows: whether the IGBT unit in the working state is broken down or not is judged by judging whether the obtained current change times are the same as the preset basic current change times or not, and the breakdown condition of the high-side drive of the IGBT unit can be quickly detected.
Referring to fig. 1, the technical solution provided by the present invention is:
a breakdown detection method for an IGBT cell, comprising the steps of:
s1, presetting basic current change times;
s2, acquiring the current change times of the IGBT unit in the working state in one period;
s3, judging whether the current change times of the IGBT unit in the working state in one period is equal to the basic current change times or not;
and S4, if not, judging that the IGBT unit in the working state has breakdown.
From the above description, the beneficial effects of the present invention are:
according to the scheme, the current change times of the IGBT unit in the working state in one period are obtained, the obtained current change times are compared with the preset basic current change times, whether the IGBT unit in the working state is broken down or not is judged by judging whether the obtained current change times are the same as the preset basic current change times or not, the breakdown condition of high-side drive of the IGBT unit can be rapidly detected, and the breakdown condition of the high-side drive of the IGBT unit can be detected within 300 ms; moreover, working state switching and driving mode switching are not needed, the breakdown detection efficiency is improved, and the power stability is high; the breakdown detection method designed by the scheme can be used for directly performing breakdown detection on the IGBT unit in the working state, is high in detection accuracy, cannot influence the normal work of the IGBT unit, and can also stop outputting in time and feed back fault information to a server to wait for maintenance of a worker when the fault occurs.
Further, the specific step of acquiring the current change times of the IGBT unit in the operating state in one cycle is as follows:
s21, presetting a reference current value;
s22, sequentially collecting the stable current values of the IGBT units in one period;
s23, comparing each collected stable current value with the reference current value respectively to obtain corresponding current difference values;
s24, sequentially judging whether the three continuous current difference values are all larger than a preset change threshold value;
and S25, if yes, recording the current change times of the IGBT unit, storing the current three continuous stable current values, and taking the last stable current value of the current three continuous stable current values as a new basic current value.
Further, the method also comprises the following steps:
presetting an initial value of current change times;
calculating the three continuous current difference values and the reference current value respectively to obtain three current difference values which are used as a judgment basis for a group of current changes;
and if the detected continuous three current difference values of one group are all larger than the preset change threshold value, adding one to the initial value of the current change times.
Further, the IGBT cells include an IGBT1 cell and an IGBT2 cell, the IGBT1 cell is electrically connected to the IGBT2 cell;
the specific steps of acquiring the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period are as follows:
presetting a reference current value;
dividing the one period into a first interval and a second interval;
sequentially collecting the stable current values of the IGBT1 units in the first interval and sequentially collecting the stable current values of the IGBT2 units in the second interval;
comparing each collected stable current value of the IGBT1 unit and the IGBT2 unit with a preset reference current value respectively to obtain corresponding current difference values;
sequentially judging whether three continuous current difference values in the IGBT1 unit and the IGBT2 unit are all larger than a preset change threshold value;
if so, recording the current change times of the IGBT1 unit and the IGBT2 unit, storing the current continuous three stable current values in the IGBT1 unit and the IGBT2 unit, and taking the last collected stable current value in the current continuous three stable current values in the IGBT1 unit and the IGBT2 unit as the new basic current values of the IGBT1 unit and the IGBT2 unit respectively.
As is apparent from the above description, by dividing one cycle into the first section in which the high-side tube breakdown of the IGBT1 cell can be judged from the number of changes in the current of the IGBT1 cell and the second section in which the tube-side tube breakdown of the IGBT2 cell can be judged from the number of changes in the current of the IGBT2 cell.
Further, after acquiring the current change times of the IGBT1 cell and the IGBT2 cell in the operating state in one cycle, the method further includes the following steps:
judging whether the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period are equal to the preset basic current change times or not;
if the current change times of the IGBT1 unit in the working state in one period are not equal to the preset basic current change times, judging that the IGBT1 unit breaks down;
if the current change times of the IGBT2 unit in the working state in one period are not equal to the preset basic current change times, judging that the IGBT2 unit breaks down;
and if the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period are not equal to the preset basic current change times, judging that the IGBT1 unit and the IGBT2 unit are both broken down.
As is apparent from the above description, by dividing one cycle into the first section in which the high-side tube breakdown of the IGBT1 cell can be judged from the number of changes in the current of the IGBT1 cell and the second section in which the tube-side tube breakdown of the IGBT2 cell can be judged from the number of changes in the current of the IGBT2 cell.
Further, the IGBT units comprise an IGBT1 unit and an IGBT2 unit, the IGBT1 unit is electrically connected with the IGBT2 unit, the current change times of the IGBT units in one period is 1-4 times, the current change times of the IGBT1 unit in one period is 1-2 times, and the current change times of the IGBT2 unit in one period is 1-2 times.
As can be seen from the above description, when the IGBT cells include the IGBT1 cell and the IGBT2 cell, the number of current changes of the IGBT cells in one cycle is 1 to 4, and the number of current changes of the corresponding IGBT cells is different in the case of different duty ratios, but it can be determined that there is a breakdown as long as the number of current changes detected in the corresponding duty ratios is different from the preset number of current changes (i.e., in the case of a normal case, i.e., in the case where the IGBT does not break down).
Referring to fig. 1 to 10, a first embodiment of the present invention is:
a breakdown detection method for an IGBT cell, comprising the steps of:
s1, presetting basic current change times;
s2, acquiring the current change times of the IGBT unit in the working state in one period;
s3, judging whether the current change times of the IGBT unit in the working state in one period is equal to the basic current change times or not;
and S4, if not, judging that the IGBT unit in the working state has breakdown.
The specific steps of acquiring the current change times of the IGBT unit in the working state in one period are as follows:
s21, presetting a reference current value;
s22, sequentially collecting the stable current values of the IGBT units in one period;
s23, comparing each collected stable current value with the reference current value respectively to obtain corresponding current difference values;
s24, sequentially judging whether the three continuous current difference values are all larger than a preset change threshold value;
and S25, if yes, recording the current change times of the IGBT unit, storing the current three continuous stable current values, and taking the last stable current value of the current three continuous stable current values as a new basic current value.
Further comprising:
presetting an initial value of current change times;
calculating the three continuous current difference values and the reference current value respectively to obtain three current difference values which are used as a judgment basis for a group of current changes;
and if the detected continuous three current difference values of one group are all larger than the preset change threshold value, adding one to the initial value of the current change times. If the detected three continuous current difference values of the two groups are all larger than the preset change threshold value, the current variable current change times are recorded as two times, and the corresponding current change times of the three groups are recorded as three times.
The IGBT units comprise an IGBT1 unit and an IGBT2 unit, and the IGBT1 unit is electrically connected with the IGBT2 unit;
the specific steps of acquiring the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period are as follows:
presetting a reference current value;
dividing the one period into a first interval and a second interval;
sequentially collecting the stable current values of the IGBT1 units in the first interval and sequentially collecting the stable current values of the IGBT2 units in the second interval;
comparing each collected stable current value of the IGBT1 unit and the IGBT2 unit with a preset reference current value respectively to obtain corresponding current difference values;
sequentially judging whether three continuous current difference values in the IGBT1 unit and the IGBT2 unit are all larger than a preset change threshold value;
if so, recording the current change times of the IGBT1 unit and the IGBT2 unit, storing the current continuous three stable current values in the IGBT1 unit and the IGBT2 unit, and taking the last collected stable current value in the current continuous three stable current values in the IGBT1 unit and the IGBT2 unit as the new basic current values of the IGBT1 unit and the IGBT2 unit respectively.
The first interval is [ 0%, 50%) of the period and the second interval is [ 50%, 100%) of the period.
After acquiring the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period, the method further comprises the following steps:
judging whether the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period are equal to the preset basic current change times or not;
if the current change times of the IGBT1 unit in the working state in one period are not equal to the preset basic current change times, judging that the IGBT1 unit breaks down;
if the current change times of the IGBT2 unit in the working state in one period are not equal to the preset basic current change times, judging that the IGBT2 unit breaks down;
and if the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period are not equal to the preset basic current change times, judging that the IGBT1 unit and the IGBT2 unit are both broken down.
The IGBT units comprise an IGBT1 unit and an IGBT2 unit, the IGBT1 unit is electrically connected with the IGBT2 unit, the current change times of the IGBT units in one period are 1-4 times, the current change times of the IGBT1 unit in one period are 1-2 times, and the current change times of the IGBT2 unit in one period are 1-2 times.
The specific embodiment of the breakdown detection method for the IGBT unit described above is:
one period is denoted by T, and is divided into a first interval (denoted by T1) and a second interval (denoted by T2), wherein T1 is [ 0%, 50%) period of T, and T2 is [ 50%, 100%) period of T;
obtaining the current change times of T1, T2 and T as C1, C2 and C respectively;
the variation threshold value is set to 4A, and the initial value of the reference current value is 0A;
at the time T1, if the collected three continuous stable current values are 10A, 10.1A and 9.9A;
at the time T2, if the collected three continuous stable current values are 10.02A, 9.98A and 10.1A;
the corresponding current difference values calculated from the reference current value at time T1 are respectively 10A, 10.1A and 9.9A, since 10A, 10.1A and 9.9A are all greater than 4A (change threshold), the current change number can be recorded once, at this time, to judge whether the current difference value calculated from the later collected stable current value and the reference current value is greater than the change threshold, the system will automatically store the three continuous stable current values collected before and use the last collected stable current value as the new base current value, that is, the new base current value of 9.9A is used as the basis for judgment, if the three continuous stable current values detected later are respectively 15A, 14.7A and 14.9A, since 15-9.9 ═ 5.1A >4A, 14.7-9.9 ═ 4.8A >4A, 14.9-9.9 ═ 5A >4A, the current change number can be recorded twice, if three continuous stable current values of 13A, 14.7A and 14.9A are detected later, since 13-9.9-3.1A <4A, 14.7-9.9-4.8A >4A and 14.9-9.9-5A >4A, the condition of recording the number of current changes is not met, and the number of current changes is one;
similarly, the determination process at the time T2 is the same as that at the time T1, and is not described in detail here.
The following are current output waveform diagrams of the IGBT unit, the IGBT1 unit, and the IGBT2 unit of this scheme under different duty cycles in one cycle, three of which are given in this specific embodiment as follows:
duty cycle refers to the proportion of the power-on time relative to the total time in a pulse cycle, and the Duty cycle (Duty Ratio) has the following meaning in the field of telecommunications: for example: the pulse width is 1 mus and the duty cycle of the pulse train for a signal period of 4 mus is 0.25, i.e. assuming that a period is 100% and is operating 40%, the duty cycle is 40%/100%/0.4.
In the first case: the duty ratio is 45%;
referring to FIG. 2, the first graph is the current output waveform of the IGBT1 unit, the second graph is the current output waveform of the IGBT2 unit, and the third graph is the current output waveform of the IGBT (i.e. the current output waveform of the IGBT1 unit and the IGBT2 unit after being overlapped)
Referring to the current output waveform diagram of the IGBT cell in fig. 2, in the interval of [ 0%, 50%, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 10A; (2) at the time of 45% T, the current output of the IGBT cell changes from 10A to 0A, and at the time of T1 [ [ 0%, 50%) cycle, the number of current changes C1 of the IGBT1 cell is 2;
in the [ 50%, 100%) interval, (1) at time 50% T, the current output of the IGBT cell changes from 0A to 10A; (2) at the time of 90% T, the current output of the IGBT cell changes from 10A to 0A, and at the time of T2 [ [ 50%, 100%) cycle, the number of current changes C2 of the IGBT2 cell is 2;
in the interval of [ 0%, 100%), at (1) time 0% T, the current output of the IGBT cell changes from 0A to 10A; (2) at the time of 45% T, the current output of the IGBT unit is changed from 10A to 0A; (3) at the time of 50% T, the current output of the IGBT unit is changed from 0A to 10A; (4) when the current output of the IGBT unit changes from 10A to 0A at time 90% T, the number of current changes C of the IGBT unit becomes 4 times at the time T [ [ 0%, 100%);
fig. 2 is a current output waveform diagram of the IGBT1 unit, the IGBT2 unit, and the IGBT unit when breakdown does not occur, that is, when the IGBT1 unit, the IGBT2 unit, and the IGBT unit do not occur, corresponding current change times are C1-2 times, C2-2 times, and C-4 times, respectively, and it is determined that breakdown occurs as long as the current change times of the IGBT1 unit, the IGBT2 unit, and the IGBT unit are not equal to C1-2 times, C2-2 times, and C-4 times.
Referring to fig. 3, a current output waveform diagram of the IGBT unit is shown, that is, a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in the [ 0%, 50%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 10A; (2) at time 45% T, the current output of the IGBT cell is 10A, and in a period T1 [ [ 0%, 50%), the number of current changes C1 of the IGBT1 cell is 1;
in the [ 50%, 100%) interval, (1) at the time of 50% T, the current output of the IGBT cell changes from 0A to 20A (the initial reference current of each interval is 0A); (2) at the time of 90% T, the current output of the IGBT cell changes from 20A to 10A, and in a period of T2 [ -50%, 100%), the number of current changes C2 of the IGBT2 cell is 2;
in the interval of [ 0%, 100%), at (1) time 0% T, the current output of the IGBT cell changes from 0A to 10A; (2) at the time of 50% T, the current output of the IGBT unit is changed from 10A to 20A; (3) when the current output of the IGBT unit changes from 20A to 10A at time 90% T, the number of current changes C of the IGBT unit becomes 3 times at the time T [ [ 0%, 100%);
as can be seen from this, the numbers of current changes corresponding to the IGBT1 cell, the IGBT2 cell, and the IGBT cell in the waveform diagram of fig. 3 are C1 ≠ 1, C2 ≠ 2, and C ≠ 3, respectively, and since C1 ≠ 1 ≠ 2 and C ≠ 3 ≠ 4, it can be determined that the high-side tube of the IGBT1 cell has a breakdown.
Fig. 4 is a waveform diagram of another current output of the IGBT unit, that is, a waveform diagram of current output after the IGBT1 unit and the IGBT2 unit are superimposed;
in the [ 0%, 50%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 10A; (2) at the time of 45% T, the current output of the IGBT cell changes from 20A to 10A, and in a period of T1 [ [ 0%, 50%), the number of current changes C1 of the IGBT1 cell is 2;
in the [ 50%, 100%) interval, (1) at the time of 50% T, the current output of the IGBT cell changes from 0A to 10A (the initial reference current of each interval is 0A); (2) at the time of 90% T, the current output of the IGBT cell is 10A, and in a period of T2 [ [ 50%, 100%), the number of current changes C2 of the IGBT2 cell is 1;
in the [ 0%, 100%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the time of 50% T, the current output of the IGBT unit is changed from 10A to 20A; (3) at the time of 90% T, the current output of the IGBT cell is 10A, and the current change time C of the IGBT cell is 3 times in the period of T [ [ 0%, 100%);
as can be seen from this, the numbers of current changes corresponding to the IGBT1 cell, the IGBT2 cell, and the IGBT cell in the waveform diagram of fig. 4 are C1 ≠ 2 times, C2 ≠ 1 times, and C ≠ 3 times, respectively, and since C2 ≠ 1 ≠ 2 and C ≠ 3 ≠ 4, it can be determined that the high-side tube of the IGBT2 cell has a breakdown.
In the second case: the duty ratio is 60%;
referring to FIG. 5, the first graph is the current output waveform of the IGBT1 unit, the second graph is the current output waveform of the IGBT2 unit, and the third graph is the current output waveform of the IGBT (i.e. the current output waveform of the IGBT1 unit and the IGBT2 unit after being overlapped)
Referring to the current output waveform diagram of the IGBT cell in fig. 5, in the interval of [ 0%, 50%, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at time 10% T, the current output of the IGBT cell changes from 10A to 0A, and at time T1 [ [ 0%, 50%) of the cycle, the number of current changes C1 of the IGBT1 cell is 2;
in the [ 50%, 100%) interval, (1) at time 50% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the time of 60% T, the current output of the IGBT cell changes from 20A to 10A, and at the time of T2 [ -50%, 100%) cycle, the number of current changes C2 of the IGBT2 cell is 2;
in the [ 0%, 100%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the time of 10% T, the current output of the IGBT unit is changed from 20A to 10A; (3) at the time of 50% T, the current output of the IGBT unit is changed from 10A to 20A; (4) when the current output of the IGBT unit changes from 20A to 10A at time 60% T, the number of current changes C of the IGBT unit becomes 4 at the time T [ [ 0%, 100%);
fig. 5 is a current output waveform diagram of the IGBT1 unit, the IGBT2 unit, and the IGBT unit when breakdown does not occur, that is, when the IGBT1 unit, the IGBT2 unit, and the IGBT unit do not occur, corresponding current change times are C1-2 times, C2-2 times, and C-4 times, respectively, and it is determined that breakdown occurs as long as the current change times of the IGBT1 unit, the IGBT2 unit, and the IGBT unit are not equal to C1-2 times, C2-2 times, and C-4 times.
Referring to fig. 6, a current output waveform diagram of the IGBT unit is shown, that is, a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in the [ 0%, 50%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at time point 10% T, the current output of the IGBT cell changes from 20A to 10A, and in a period T1 [ [ 0%, 50%), the number of current changes C1 of the IGBT1 cell is 2;
in the [ 50%, 100%) interval, (1) at the time of 50% T, the current output of the IGBT cell changes from 0A to 20A (the initial reference current of each interval is 0A); (2) at the time of 90% T, the current output of the IGBT cell is 20A, and in a period of T2 [ [ 50%, 100%), the number of current changes C2 of the IGBT2 cell is 1;
in the [ 0%, 100%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the time of 10% T, the current output of the IGBT unit is changed from 20A to 10A; (3) at the time of 50% T, the current output of the IGBT unit is changed from 10A to 20A; (4) when the current output of the IGBT unit changes from 20A to 10A at time 90% T, the number of current changes C of the IGBT unit becomes 3 times at the time T [ [ 0%, 100%);
as can be seen from this, the numbers of current changes corresponding to the IGBT1 cell, the IGBT2 cell, and the IGBT cell in the waveform diagram of fig. 6 are C1 ≠ 2 times, C2 ≠ 1 times, and C ≠ 3 times, respectively, and since C2 ≠ 1 ≠ 2 and C ≠ 3 ≠ 4, it can be determined that the high-side tube of the IGBT2 cell has a breakdown.
Fig. 7 is a waveform diagram of another current output of the IGBT unit, that is, a waveform diagram of current output after the IGBT1 unit and the IGBT2 unit are superimposed;
in the [ 0%, 50%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at time T10%, the current output of the IGBT cell is 20A, and in a period T1 [ [ 0%, 50%), the number of current changes C1 of the IGBT1 cell is 1;
in the [ 50%, 100%) interval, (1) at the time of 50% T, the current output of the IGBT cell changes from 0A to 20A (the initial reference current of each interval is 0A); (2) at the time of 60% T, the current output of the IGBT cell changes from 20A to 10A, and in a period of T2 [ -50%, 100%), the number of current changes C2 of the IGBT2 cell is 2;
in the [ 0%, 100%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the time of 10% T, the current output of the IGBT unit is 20A; (3) at the moment of 90% T, the current output of the IGBT unit is 10A; (4) at the time of 60% T, the current output of the IGBT unit is changed from 20A to 10A; then the current change number C of the IGBT cell becomes 2 times during the period T ═ 0%, 100%;
as can be seen from this, the numbers of current changes corresponding to the IGBT1 cell, the IGBT2 cell, and the IGBT cell in the waveform diagram of fig. 7 are C1 ≠ 1, C2 ≠ 2, and C ≠ 2, respectively, and since C2 ≠ 1 ≠ 2 and C ≠ 2 ≠ 4, it can be determined that the high-side tube of the IGBT2 cell has a breakdown.
In the third case: the duty ratio is 98%;
referring to FIG. 8, the first graph is the current output waveform of the IGBT1 unit, the second graph is the current output waveform of the IGBT2 unit, and the third graph is the current output waveform of the IGBT (i.e. the current output waveform of the IGBT1 unit and the IGBT2 unit after being overlapped)
Referring to the IGBT cell current output waveform diagram in fig. 8, in the interval of [ 0%, 50%, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 10A, and (2) at time 48% T, the current output of the IGBT cell changes from 20A to 10A, so that the current change time C1 of the IGBT1 cell is 2 times at the time of T1 [ 0%, 50%) cycle;
in the [ 50%, 100%) interval, (1) at time 52% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the time of 98% T, the current output of the IGBT cell changes from 20A to 10A, and at the time of T2 [ [ 50%, 100%) cycle, the number of current changes C2 of the IGBT2 cell is 2;
fig. 8 is a current output waveform diagram of the IGBT1 unit, the IGBT2 unit, and the IGBT unit when breakdown does not occur, that is, when the IGBT1 unit, the IGBT2 unit, and the IGBT unit do not occur, corresponding current change times are C1-2 times, C2-2 times, and C-4 times, respectively, and it is determined that breakdown occurs as long as the current change times of the IGBT1 unit, the IGBT2 unit, and the IGBT unit are not equal to C1-2 times, C2-2 times, and C-4 times.
Referring to fig. 9, a current output waveform diagram of the IGBT unit is shown, that is, a current output waveform diagram obtained by overlapping the IGBT1 unit and the IGBT2 unit;
in the [ 0%, 50%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the time of 48% T, the current output of the IGBT cell changes from 20A to 10A, and in a period of T1 [ [ 0%, 50%), the number of current changes C1 of the IGBT1 cell is 2;
in the [ 50%, 100%) interval, (1) at time 52% T, the current output of the IGBT cell changes from 0A to 20A (the initial reference current of each interval is 0A); (2) at the time of 98% T, the current output of the IGBT cell is 20A, and in a period T2 ═ 50%, 100%, the number of current changes C2 of the IGBT2 cell is 1;
in the [ 0%, 100%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the time of 48% T, the current output of the IGBT unit is changed from 20A to 10A; (3) at the time of 52% T, the current output of the IGBT unit is changed from 10A to 20A; (4) at the time of 98% T, the current output of the IGBT unit is 20A, and the current change time C of the IGBT unit is 3 times in the period of T [ [ 0%, 100%);
as can be seen from this, the numbers of current changes corresponding to the IGBT1 cell, the IGBT2 cell, and the IGBT cell in the waveform diagram of fig. 9 are C1 ≠ 2 times, C2 ≠ 1 times, and C ≠ 3 times, respectively, and since C2 ≠ 1 ≠ 2 and C ≠ 3 ≠ 4, it can be determined that the high-side tube of the IGBT2 cell has a breakdown.
Referring to fig. 10, a current output waveform diagram of an IGBT unit is shown, that is, a current output waveform diagram obtained by overlapping an IGBT1 unit and an IGBT2 unit;
in the [ 0%, 50%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the time of 48% T, the current output of the IGBT cell is 20A, and in a period of T1 [ [ 0%, 50%), the number of current changes C1 of the IGBT1 cell is 1;
in the [ 50%, 100%) interval, (1) at time 52% T, the current output of the IGBT cell changes from 0A to 20A (the initial reference current of each interval is 0A); (2) at the time of 98% T, the current output of the IGBT cell changes from 20A to 10A, and in a period of T2 [ -50%, 100%), the number of current changes C2 of the IGBT2 cell is 2;
in the [ 0%, 100%) interval, (1) at time 0% T, the current output of the IGBT cell changes from 0A to 20A; (2) at the moment of 48% T, the current output of the IGBT unit is 20A; (3) at the moment of 52% T, the current output of the IGBT unit is 20A; (4) when the current output of the IGBT unit changes from 20A to 10A at time T of 98%, the number of current changes C of the IGBT unit becomes 2 times at a period T [ [ 0%, 100%);
as can be seen from this, the numbers of current changes corresponding to the IGBT1 cell, the IGBT2 cell, and the IGBT cell in the waveform diagram of fig. 10 are C1 ≠ 1, C2 ≠ 2, and C ≠ 2, respectively, and since C2 ≠ 1 ≠ 2 and C ≠ 2 ≠ 4, it can be determined that the high-side tube of the IGBT2 cell has a breakdown.
The IGBT units further comprise an IGBT3 unit, an IGBT4 unit, an IGBT5 unit and an IGBT6 unit … … IGBTn unit, the number of the IGBT units can be properly selected according to the size of the used power, when the power is high, the IGBT units can select a plurality of IGBT units, and the breakdown detection method of the IGBT1 unit and the breakdown detection method of the IGBT2 unit are also suitable for breakdown detection of the IGBT3 unit, the IGBT4 unit, the IGBT5 unit and the IGBT6 unit … … IGBTn unit.
In summary, according to the breakdown detection method for the IGBT unit provided by the present invention, the current change times of the IGBT unit in the operating state in one period are obtained, the obtained current change times are compared with the preset basic current change times, and whether the IGBT unit in the operating state has breakdown is determined by determining whether the obtained current change times are the same as the preset basic current change times, so that the breakdown condition of the high-side drive of the IGBT unit can be quickly detected, and the breakdown condition of the high-side drive of the IGBT unit can be detected within 300 ms; moreover, working state switching and driving mode switching are not needed, the breakdown detection efficiency is improved, and the power stability is high; the breakdown detection method designed by the scheme can be used for directly performing breakdown detection on the IGBT unit in the working state, is high in detection accuracy, cannot influence the normal work of the IGBT unit, and can also stop outputting in time and feed back fault information to a server to wait for maintenance of a worker when the fault occurs.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.

Claims (4)

1. A breakdown detection method for an IGBT unit is characterized by comprising the following steps:
s1, presetting basic current change times;
s2, acquiring the current change times of the IGBT unit in the working state in one period;
s3, judging whether the current change times of the IGBT unit in the working state in one period is equal to the basic current change times or not;
s4, if not, judging that the IGBT unit in the working state breaks down;
the specific steps of acquiring the current change times of the IGBT unit in the working state in one period are as follows:
s21, presetting a reference current value;
s22, sequentially collecting the stable current values of the IGBT units in one period;
s23, comparing each collected stable current value with the reference current value respectively to obtain corresponding current difference values;
s24, sequentially judging whether the three continuous current difference values are all larger than a preset change threshold value;
s25, if yes, recording the current change times of the IGBT unit, storing the current three continuous stable current values, and taking the last stable current value of the current three continuous stable current values as a new basic current value;
further comprising:
presetting an initial value of current change times;
calculating the three continuous current difference values and the reference current value respectively to obtain three current difference values which are used as a judgment basis for a group of current changes;
and if the detected continuous three current difference values of one group are all larger than the preset change threshold value, adding one to the initial value of the current change times.
2. The breakdown detection method for the IGBT cell according to claim 1, wherein the IGBT cell comprises an IGBT1 cell and an IGBT2 cell, the IGBT1 cell being electrically connected with the IGBT2 cell;
the specific steps of acquiring the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period are as follows:
presetting a reference current value;
dividing the one period into a first interval and a second interval;
sequentially collecting the stable current values of the IGBT1 units in the first interval and sequentially collecting the stable current values of the IGBT2 units in the second interval;
comparing each collected stable current value of the IGBT1 unit and the IGBT2 unit with a preset reference current value respectively to obtain corresponding current difference values;
sequentially judging whether three continuous current difference values in the IGBT1 unit and the IGBT2 unit are all larger than a preset change threshold value;
if so, recording the current change times of the IGBT1 unit and the IGBT2 unit, storing the current continuous three stable current values in the IGBT1 unit and the IGBT2 unit, and taking the last collected stable current value in the current continuous three stable current values in the IGBT1 unit and the IGBT2 unit as the new basic current values of the IGBT1 unit and the IGBT2 unit respectively.
3. The breakdown detection method for the IGBT cell according to claim 2, characterized by further comprising the following steps after obtaining the current change times of the IGBT1 cell and the IGBT2 cell in the working state in one cycle:
judging whether the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period are equal to the preset basic current change times or not;
if the current change times of the IGBT1 unit in the working state in one period are not equal to the preset basic current change times, judging that the IGBT1 unit breaks down;
if the current change times of the IGBT2 unit in the working state in one period are not equal to the preset basic current change times, judging that the IGBT2 unit breaks down;
and if the current change times of the IGBT1 unit and the IGBT2 unit in the working state in one period are not equal to the preset basic current change times, judging that the IGBT1 unit and the IGBT2 unit are both broken down.
4. The breakdown detection method for the IGBT unit according to claim 1, wherein the IGBT unit comprises an IGBT1 unit and an IGBT2 unit, the IGBT1 unit is electrically connected with the IGBT2 unit, the number of current changes of the IGBT unit in one period is 1-4, the number of current changes of the IGBT1 unit in one period is 1-2, and the number of current changes of the IGBT2 unit in one period is 1-2.
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