CN102257640B - 雪崩光电二极管 - Google Patents

雪崩光电二极管 Download PDF

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Publication number
CN102257640B
CN102257640B CN200980150764.6A CN200980150764A CN102257640B CN 102257640 B CN102257640 B CN 102257640B CN 200980150764 A CN200980150764 A CN 200980150764A CN 102257640 B CN102257640 B CN 102257640B
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China
Prior art keywords
layer
mentioned
electrode layer
avalanche multiplication
light absorbing
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CN200980150764.6A
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English (en)
Chinese (zh)
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CN102257640A (zh
Inventor
石桥忠夫
安藤清后
村本好史
中岛史人
横山春喜
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NTT Electronics Corp
Nippon Telegraph and Telephone Corp
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NTT Electronics Corp
Nippon Telegraph and Telephone Corp
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Publication of CN102257640A publication Critical patent/CN102257640A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

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  • Light Receiving Elements (AREA)
CN200980150764.6A 2008-12-17 2009-12-11 雪崩光电二极管 Active CN102257640B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-321298 2008-12-17
JP2008321298A JP4728386B2 (ja) 2008-12-17 2008-12-17 アバランシ・フォトダイオード
PCT/JP2009/070783 WO2010071088A1 (ja) 2008-12-17 2009-12-11 アバランシ・フォトダイオード

Publications (2)

Publication Number Publication Date
CN102257640A CN102257640A (zh) 2011-11-23
CN102257640B true CN102257640B (zh) 2014-03-12

Family

ID=42268759

Family Applications (1)

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CN200980150764.6A Active CN102257640B (zh) 2008-12-17 2009-12-11 雪崩光电二极管

Country Status (5)

Country Link
US (1) US8575650B2 (und)
EP (1) EP2378567B1 (und)
JP (1) JP4728386B2 (und)
CN (1) CN102257640B (und)
WO (1) WO2010071088A1 (und)

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JP5631668B2 (ja) * 2010-09-02 2014-11-26 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
JP5327892B2 (ja) * 2010-09-02 2013-10-30 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
JP5649219B2 (ja) 2011-01-24 2015-01-07 Ｎｔｔエレクトロニクス株式会社 半導体装置
EP2850665A4 (en) * 2012-05-17 2016-03-02 Picometrix Llc PLANARE LAWINEN PHOTODIODE
US20150179863A1 (en) * 2013-12-20 2015-06-25 The Regents Of The University Of California Avalanche photodiode utilizing interfacial misfit array
JP6130318B2 (ja) * 2014-03-18 2017-05-17 日本電信電話株式会社 アバランシェフォトダイオード
JP2016032034A (ja) * 2014-07-29 2016-03-07 Ｎｔｔエレクトロニクス株式会社 アバランシェフォトダイオード
JP5844445B2 (ja) * 2014-09-10 2016-01-20 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
WO2016088668A1 (ja) 2014-12-05 2016-06-09 日本電信電話株式会社 アバランシェ・フォトダイオード
CN105514186B (zh) * 2015-12-29 2017-09-26 中国计量学院 一种宽波段探测的光电探测器
CN108351366A (zh) * 2016-01-25 2018-07-31 京瓷株式会社 测量传感器用封装体以及测量传感器
US9466751B1 (en) * 2016-03-04 2016-10-11 National Central University Avalanche photodiode having electric-field confinement by mesas
EP3680941B1 (en) * 2017-09-06 2022-09-28 Nippon Telegraph and Telephone Corporation Avalanche photodiode and method for manufacturing same
US11329179B2 (en) * 2017-09-15 2022-05-10 Mitsubishi Electric Corporation Semiconductor light-receiving device and method for manufacturing the same
CN110611000A (zh) * 2018-08-02 2019-12-24 深圳市芯思杰联邦国际科技发展有限公司 一种背入式雪崩光电探测器芯片及其制作方法
EP4064369B1 (en) * 2019-11-18 2025-04-30 Nippon Telegraph And Telephone Corporation Avalanche photodiode
JP7452552B2 (ja) * 2019-11-18 2024-03-19 日本電信電話株式会社 受光素子の製造方法
CN111403540B (zh) * 2020-01-15 2022-02-15 华中科技大学 一种雪崩光电二极管
TWI728694B (zh) * 2020-02-12 2021-05-21 國立中央大學 混層複合式充電層累增崩潰光二極體
US11056604B1 (en) * 2020-02-18 2021-07-06 National Central University Photodiode of avalanche breakdown having mixed composite charge layer
JP7615412B1 (ja) * 2024-03-26 2025-01-16 三菱電機株式会社 半導体受光素子、半導体受光素子の製造方法、光回線終端装置、多値強度変調送受信装置、デジタルコヒーレント受信装置、光ファイバ無線システム、ｓｐａｄセンサーシステム、及びライダー装置

Citations (2)

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CN1445864A (zh) * 2001-09-06 2003-10-01 住友电气工业株式会社 ZnMgSSe系正－本－负光电二极管以及ZnMgSSe系雪崩二极管
CN1933187A (zh) * 2005-09-12 2007-03-21 三菱电机株式会社 雪崩光电二极管

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JPS5654080A (en) * 1979-10-08 1981-05-13 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode
JP2601231B2 (ja) * 1994-12-22 1997-04-16 日本電気株式会社 超格子アバランシェフォトダイオード
US5610416A (en) * 1995-02-16 1997-03-11 Hewlett-Packard Company Avalanche photodiode with epitaxially regrown guard rings
JPH11330536A (ja) * 1998-05-13 1999-11-30 Nec Corp 半導体受光素子
JP3141847B2 (ja) * 1998-07-03 2001-03-07 日本電気株式会社 アバランシェフォトダイオード
US6891202B2 (en) * 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
US7122734B2 (en) * 2002-10-23 2006-10-17 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
JP4191564B2 (ja) * 2003-09-10 2008-12-03 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
JP4127815B2 (ja) * 2003-11-10 2008-07-30 日本電信電話株式会社 アバランシェフォトダイオード
JP2005223022A (ja) * 2004-02-03 2005-08-18 Ntt Electornics Corp アバランシ・フォトダイオード
JP4234116B2 (ja) * 2005-06-27 2009-03-04 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
KR101384247B1 (ko) * 2006-04-28 2014-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환소자 및 광전변환소자의 제작 방법
JP2009252769A (ja) 2008-04-01 2009-10-29 Nec Corp 半導体受光素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1445864A (zh) * 2001-09-06 2003-10-01 住友电气工业株式会社 ZnMgSSe系正－本－负光电二极管以及ZnMgSSe系雪崩二极管
CN1933187A (zh) * 2005-09-12 2007-03-21 三菱电机株式会社 雪崩光电二极管

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2007-5697A 2007.01.11

Also Published As

Publication number Publication date
US8575650B2 (en) 2013-11-05
WO2010071088A1 (ja) 2010-06-24
EP2378567A4 (en) 2015-08-12
CN102257640A (zh) 2011-11-23
JP4728386B2 (ja) 2011-07-20
US20110241150A1 (en) 2011-10-06
JP2010147177A (ja) 2010-07-01
EP2378567A1 (en) 2011-10-19
EP2378567B1 (en) 2019-06-26

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