CN102257602A - 用于改善线锯切割期间的干燥度的组合物 - Google Patents

用于改善线锯切割期间的干燥度的组合物 Download PDF

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Publication number
CN102257602A
CN102257602A CN2009801511016A CN200980151101A CN102257602A CN 102257602 A CN102257602 A CN 102257602A CN 2009801511016 A CN2009801511016 A CN 2009801511016A CN 200980151101 A CN200980151101 A CN 200980151101A CN 102257602 A CN102257602 A CN 102257602A
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CN
China
Prior art keywords
weight
composition
less
carrier
polyalcohol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801511016A
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English (en)
Chinese (zh)
Inventor
N.纳吉布
S.格伦比尼
K.莫根伯格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN102257602A publication Critical patent/CN102257602A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/007—Use, recovery or regeneration of abrasive mediums
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H01L21/4896—Mechanical treatment, e.g. cutting, bending
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes
    • Y10T83/0405—With preparatory or simultaneous ancillary treatment of work
    • Y10T83/0443—By fluid application

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2009801511016A 2008-12-20 2009-12-21 用于改善线锯切割期间的干燥度的组合物 Pending CN102257602A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20314608P 2008-12-20 2008-12-20
US61/203,146 2008-12-20
PCT/US2009/068909 WO2010071870A2 (en) 2008-12-20 2009-12-21 Composition for improving dryness during wire sawing

Publications (1)

Publication Number Publication Date
CN102257602A true CN102257602A (zh) 2011-11-23

Family

ID=42269291

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801511016A Pending CN102257602A (zh) 2008-12-20 2009-12-21 用于改善线锯切割期间的干燥度的组合物

Country Status (10)

Country Link
US (1) US8597538B2 (enExample)
EP (1) EP2377146A2 (enExample)
JP (1) JP5600117B2 (enExample)
KR (1) KR20110104066A (enExample)
CN (1) CN102257602A (enExample)
IL (1) IL213232A0 (enExample)
MY (1) MY152029A (enExample)
SG (1) SG172288A1 (enExample)
TW (1) TWI403575B (enExample)
WO (1) WO2010071870A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112011100688T5 (de) * 2010-02-26 2013-02-28 Sumco Corporation Verfahren zum Herstellen eines Halbleiterwafers
JP6039935B2 (ja) * 2012-06-29 2016-12-07 出光興産株式会社 水性加工液
KR102040050B1 (ko) * 2013-08-02 2019-11-05 동우 화인켐 주식회사 웨이퍼 다이싱용 세정제 조성물
CN104194647B (zh) * 2014-09-02 2016-04-06 蓝思科技股份有限公司 一种加工蓝宝石专用钻石研磨液和研磨膏及它们的制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468339A (en) * 1982-01-21 1984-08-28 The Lubrizol Corporation Aqueous compositions containing overbased materials
JPH03181598A (ja) * 1989-12-08 1991-08-07 Yushiro Chem Ind Co Ltd 切断加工用油剤
JP2001303027A (ja) * 2000-04-26 2001-10-31 Seimi Chem Co Ltd 研磨用組成物及び研磨方法
US20030100455A1 (en) * 1999-05-18 2003-05-29 Hiroshi Oishi Aqueous grinding fluid for wire-sawing or band-sawing
CN1795545A (zh) * 2003-05-27 2006-06-28 株式会社上睦可 半导体晶片的制造方法
US20080057833A1 (en) * 2006-08-30 2008-03-06 Saint-Gobain Ceramics & Plastics, Inc. Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof
JP2008103690A (ja) * 2007-08-24 2008-05-01 Mitsubishi Electric Corp シリコンインゴット切断用スラリー

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60141795A (ja) * 1983-12-29 1985-07-26 Sanyo Chem Ind Ltd 難削材用の切削・研削油剤
JP3347278B2 (ja) * 1997-10-08 2002-11-20 ユシロ化学工業株式会社 難燃性潤滑油組成物ならびにこれを用いた切削液および切断方法
JP2001164240A (ja) * 1999-12-06 2001-06-19 Ishii Hyoki Corp 水性切削液
JP2004051756A (ja) * 2002-07-19 2004-02-19 Sanyo Chem Ind Ltd Ｃｍｐプロセス用研磨組成物
JP2005034986A (ja) * 2003-06-27 2005-02-10 Showa Denko Kk 研磨用組成物とそれを用いた基板研磨方法
JP2005193332A (ja) * 2004-01-07 2005-07-21 Tokyo Seiko Co Ltd ソーワイヤ
JP2006096951A (ja) * 2004-09-30 2006-04-13 Kyodo Yushi Co Ltd 水溶性切断加工用油剤、スラリー、及び切断加工方法
JPWO2007123235A1 (ja) * 2006-04-24 2009-09-10 日立化成工業株式会社 Ｃｍｐ用研磨液及び研磨方法
JP5081435B2 (ja) * 2006-11-22 2012-11-28 出光興産株式会社 一方向クラッチ内臓型回転伝達装置用グリース
US8821750B2 (en) * 2007-02-27 2014-09-02 Hitachi Chemical Co., Ltd. Metal polishing slurry and polishing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468339A (en) * 1982-01-21 1984-08-28 The Lubrizol Corporation Aqueous compositions containing overbased materials
US4468339B1 (en) * 1982-01-21 1989-05-16 Aqueous compositions containing overbased materials
JPH03181598A (ja) * 1989-12-08 1991-08-07 Yushiro Chem Ind Co Ltd 切断加工用油剤
US20030100455A1 (en) * 1999-05-18 2003-05-29 Hiroshi Oishi Aqueous grinding fluid for wire-sawing or band-sawing
JP2001303027A (ja) * 2000-04-26 2001-10-31 Seimi Chem Co Ltd 研磨用組成物及び研磨方法
CN1795545A (zh) * 2003-05-27 2006-06-28 株式会社上睦可 半导体晶片的制造方法
US20080057833A1 (en) * 2006-08-30 2008-03-06 Saint-Gobain Ceramics & Plastics, Inc. Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof
JP2008103690A (ja) * 2007-08-24 2008-05-01 Mitsubishi Electric Corp シリコンインゴット切断用スラリー

Also Published As

Publication number Publication date
US8597538B2 (en) 2013-12-03
KR20110104066A (ko) 2011-09-21
TWI403575B (zh) 2013-08-01
TW201033342A (en) 2010-09-16
SG172288A1 (en) 2011-07-28
WO2010071870A2 (en) 2010-06-24
MY152029A (en) 2014-08-15
EP2377146A2 (en) 2011-10-19
JP2012512757A (ja) 2012-06-07
IL213232A0 (en) 2011-07-31
US20110239836A1 (en) 2011-10-06
WO2010071870A3 (en) 2010-09-10
JP5600117B2 (ja) 2014-10-01

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Application publication date: 20111123