CN102254935A - 绝缘栅双极晶体管 - Google Patents
绝缘栅双极晶体管 Download PDFInfo
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- CN102254935A CN102254935A CN2011102256803A CN201110225680A CN102254935A CN 102254935 A CN102254935 A CN 102254935A CN 2011102256803 A CN2011102256803 A CN 2011102256803A CN 201110225680 A CN201110225680 A CN 201110225680A CN 102254935 A CN102254935 A CN 102254935A
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- igbt
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- bipolar transistor
- insulated gate
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CN2011102256803A CN102254935A (zh) | 2011-08-08 | 2011-08-08 | 绝缘栅双极晶体管 |
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CN2011102256803A CN102254935A (zh) | 2011-08-08 | 2011-08-08 | 绝缘栅双极晶体管 |
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CN102254935A true CN102254935A (zh) | 2011-11-23 |
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CN2011102256803A Pending CN102254935A (zh) | 2011-08-08 | 2011-08-08 | 绝缘栅双极晶体管 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102683404A (zh) * | 2012-05-22 | 2012-09-19 | 上海宏力半导体制造有限公司 | 绝缘栅双极型晶体管及其制造方法 |
CN103165651A (zh) * | 2011-12-12 | 2013-06-19 | 上海华虹Nec电子有限公司 | 增加驱动电流能力绝缘栅双极型晶体管结构 |
CN106920846A (zh) * | 2017-02-21 | 2017-07-04 | 深圳深爱半导体股份有限公司 | 功率晶体管及其制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6303410B1 (en) * | 1998-06-01 | 2001-10-16 | North Carolina State University | Methods of forming power semiconductor devices having T-shaped gate electrodes |
US20030094623A1 (en) * | 1998-11-18 | 2003-05-22 | Holger Kapels | Semiconductor component and method of producing it |
TW200302576A (en) * | 2002-01-18 | 2003-08-01 | Fairchild Semiconductor Corporaton | Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability |
CN1705136A (zh) * | 2004-05-31 | 2005-12-07 | 三菱电机株式会社 | 绝缘栅型半导体器件 |
CN101083278A (zh) * | 2006-10-25 | 2007-12-05 | 电子科技大学 | 一种具有双介质埋层的耐压层结构及采用双介质埋层的soi功率器件 |
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2011
- 2011-08-08 CN CN2011102256803A patent/CN102254935A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6303410B1 (en) * | 1998-06-01 | 2001-10-16 | North Carolina State University | Methods of forming power semiconductor devices having T-shaped gate electrodes |
US20030094623A1 (en) * | 1998-11-18 | 2003-05-22 | Holger Kapels | Semiconductor component and method of producing it |
TW200302576A (en) * | 2002-01-18 | 2003-08-01 | Fairchild Semiconductor Corporaton | Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability |
CN1705136A (zh) * | 2004-05-31 | 2005-12-07 | 三菱电机株式会社 | 绝缘栅型半导体器件 |
CN101083278A (zh) * | 2006-10-25 | 2007-12-05 | 电子科技大学 | 一种具有双介质埋层的耐压层结构及采用双介质埋层的soi功率器件 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103165651A (zh) * | 2011-12-12 | 2013-06-19 | 上海华虹Nec电子有限公司 | 增加驱动电流能力绝缘栅双极型晶体管结构 |
CN102683404A (zh) * | 2012-05-22 | 2012-09-19 | 上海宏力半导体制造有限公司 | 绝缘栅双极型晶体管及其制造方法 |
CN106920846A (zh) * | 2017-02-21 | 2017-07-04 | 深圳深爱半导体股份有限公司 | 功率晶体管及其制造方法 |
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PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140430 |
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Effective date of registration: 20140430 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20111123 |
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RJ01 | Rejection of invention patent application after publication |