CN103165651A - 增加驱动电流能力绝缘栅双极型晶体管结构 - Google Patents
增加驱动电流能力绝缘栅双极型晶体管结构 Download PDFInfo
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- CN103165651A CN103165651A CN2011104126626A CN201110412662A CN103165651A CN 103165651 A CN103165651 A CN 103165651A CN 2011104126626 A CN2011104126626 A CN 2011104126626A CN 201110412662 A CN201110412662 A CN 201110412662A CN 103165651 A CN103165651 A CN 103165651A
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- bipolar transistor
- insulated gate
- igbt
- gate bipolar
- drive current
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- Insulated Gate Type Field-Effect Transistor (AREA)
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CN2011104126626A CN103165651A (zh) | 2011-12-12 | 2011-12-12 | 增加驱动电流能力绝缘栅双极型晶体管结构 |
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CN2011104126626A CN103165651A (zh) | 2011-12-12 | 2011-12-12 | 增加驱动电流能力绝缘栅双极型晶体管结构 |
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CN103165651A true CN103165651A (zh) | 2013-06-19 |
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CN2011104126626A Pending CN103165651A (zh) | 2011-12-12 | 2011-12-12 | 增加驱动电流能力绝缘栅双极型晶体管结构 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106684084A (zh) * | 2015-11-10 | 2017-05-17 | 亚德诺半导体集团 | Fet‑双极晶体管组合以及包括该fet双极晶体管组合的开关 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09232332A (ja) * | 1996-02-27 | 1997-09-05 | Fuji Electric Co Ltd | 半導体装置 |
US5703383A (en) * | 1995-04-11 | 1997-12-30 | Kabushiki Kaisha Toshiba | Power semiconductor device |
DE10147307A1 (de) * | 2001-09-26 | 2003-04-24 | Infineon Technologies Ag | IGBT mit integriertem Freilaufelement |
US20030209741A1 (en) * | 2002-04-26 | 2003-11-13 | Wataru Saitoh | Insulated gate semiconductor device |
EP1713128B1 (en) * | 2005-04-14 | 2011-07-06 | Hitachi, Ltd. | IGBT and electric power conversion device using it |
CN102254935A (zh) * | 2011-08-08 | 2011-11-23 | 上海宏力半导体制造有限公司 | 绝缘栅双极晶体管 |
-
2011
- 2011-12-12 CN CN2011104126626A patent/CN103165651A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5703383A (en) * | 1995-04-11 | 1997-12-30 | Kabushiki Kaisha Toshiba | Power semiconductor device |
JPH09232332A (ja) * | 1996-02-27 | 1997-09-05 | Fuji Electric Co Ltd | 半導体装置 |
DE10147307A1 (de) * | 2001-09-26 | 2003-04-24 | Infineon Technologies Ag | IGBT mit integriertem Freilaufelement |
US20030209741A1 (en) * | 2002-04-26 | 2003-11-13 | Wataru Saitoh | Insulated gate semiconductor device |
EP1713128B1 (en) * | 2005-04-14 | 2011-07-06 | Hitachi, Ltd. | IGBT and electric power conversion device using it |
CN102254935A (zh) * | 2011-08-08 | 2011-11-23 | 上海宏力半导体制造有限公司 | 绝缘栅双极晶体管 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106684084A (zh) * | 2015-11-10 | 2017-05-17 | 亚德诺半导体集团 | Fet‑双极晶体管组合以及包括该fet双极晶体管组合的开关 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140110 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140110 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20130619 |