CN102197471A - 自动定心基座环组件 - Google Patents
自动定心基座环组件 Download PDFInfo
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Abstract
提供了自动定心基座环组件。该基座环组件包括基座环支撑构件和支撑在该基座环支撑构件上的基座环。该基座环支撑构件包括至少三个相对于该反应室的下方内表面向上延伸的销。该基座环包括至少三个制动器,所述制动器形成于底面中以容纳来自该基座环支撑构件的销。该制动器被构造为当该基座环热膨胀和收缩时允许该销在其内滑动,其中该制动器的大小和形状为使得当该基座环热膨胀和收缩时,在该基座环和位于该基座环缝隙内的基座之间的空隙围绕该基座的整个圆周基本上保持一致,从而保持相同的中心轴线。
Description
技术领域
本发明涉及半导体处理工具,以及更具体地,涉及围绕基座的基座环组件,在半导体制造过程中基板位于该基座上。
背景技术
在例如晶体管,二极管,以及集成电路的半导体装置的处理中,多个这样的装置通常被同时安装在半导体材料的薄层上,该薄层被称为基板,晶片,或工件。在这样的半导体装置制造期间的半导体处理步骤的实例中,该基板或其他工件通常被送入反应室内,在该反应室中将材料的薄膜,或薄层镀在该基板的暴露面上。一旦已经被镀上了该材料层的所需厚度,该基板可在该反应室内进一步地被处理或被运出该反应室以进一步地处理。
该基板通常通过晶片处理机构被传送到该反应室中。该晶片处理机构将该基板从该反应室外部位置升起并通过该反应室壁中形成的阀或门将该基板插入该反应室。一旦该基板被传送入该反应室,该基板降落在基座上。当在该基座上容纳到该基板后,该晶片处理机构从该反应室出撤回,以及关闭该阀以开始该基板的处理。在实例中,基座环位于该基座的附近并围绕该基座,在处理期间该基板被放置在该基座上。这样的环可用来最小化来自在处理期间的该晶片/基座边缘和/或如热传感器的封装组件处的热损耗。
图1-3示出了通常用于由ASM America,Inc.of Phoenix,AZ生产的Epsilon工具中的已知的反应室10和基板支撑组件12。当正处理基板18时,该基板支撑组件12被构造为容纳和支撑在该反应室10内的基板18。该基板支撑组件12包括基座支撑构件14和基座16。基座环组件20围绕在该反应室10内的该基座16。该基座环组件20提供了在该基座环的内向边缘和该基座的外向边缘之间的小空隙。该基座环组件20可吸收径向能量以减少或消除在处理期间的该基座16和基板18处的热损耗。通常用于该Epsilon工具中的该基座环组件20包括基座环,其包括下基座环22和上基座环24,以及基座环支撑构件26。
在处理反应室内的基板期间,该反应室内的温度变化并可具有在室温和大约1200℃之间的温度范围。当该反应室内的温度上升或降低时,相应地,该反应室内的各个组件热膨胀或收缩。在图1-3中所示的普遍已知的基板支撑组件12和基座环组件20位于该反应室10内并当该反应室10内的温度上升或降低时进行热膨胀和/或收缩。该基座支撑构件14和该基座环支撑构件26通常由保温材料如石英构成,以及该基座16,下基座环22,和上基座环24由吸热材料如涂SIC石墨构成。该基座环支撑构件26包括由该基座环容纳以在该反应室10内积极定位该基座环的多个销28。
该下基座环22,如图3的仰视图所示,包括其中形成的第一缝隙30,第二缝隙32,和第三缝隙34。这些缝隙被构造为容纳从该基座环支撑构件26处延伸的销28(见图1)。该第一缝隙30位于该上支撑环24的前缘36附近,紧靠该进气口,以及该第二和第三缝隙32,34位于该上支撑环24的后缘38附近,紧靠该排气口。该第一缝隙30成形为贯穿从该下基座环22延伸而来的凸部的圆孔。设计该第一缝隙30的大小以提供在该孔和从该基座环支撑构件26延伸的销28之一之间的滑动配合。该第二缝隙32成形为大于其所容纳销28的外径的圆孔。该第三缝隙34成形为被构造为容纳此处销28中的另一个的长槽。
当在处理基板18期间该反应室10中的温度上升时,该下和上基座环22,24热膨胀。该基座16,下基座环22,和上基座环24通常由石墨构成,而该基座支撑构件14,基座环支撑构件26,和销28通常由石英构成。由石墨构成的组件(16,22,和24)具有相对于由石英构成组件(14,26,和28)的热膨胀系数显著大的热膨胀系数,其中反应于同一温度变化,该石墨组件比该石英部分膨胀更多。为了调节这些在温度膨胀中的差异,该第二和第三孔32,34大于其所容纳的相应销28,该下或上基座环22,24能够自由地热膨胀使得在该基座环膨胀或收缩时,该销28移入该第二和第三孔32,34。但是,由于该第一缝隙30提供了与相应销28的滑动配合,阻止该基座环从接近该上基座环24的前缘36的该基座处热膨胀开来。当该基座环的后部自由热膨胀时,该基座环的前部基本上被相对于该基座而销住。该基座环的无法移动归因于接近该基座环前缘的热膨胀通常减少了在该基座环和接近该前缘的基座之间的空隙,当在该基座环和接近该前缘的基座之间的空隙增大时。
结果,该基座环前部相对于该基座的限制移动创造了在该基座环和该基座之间的不均匀空隙间距。该在该基座环和该基座之间的不均匀空隙间距在该基座附近的不同位置可导致在该基座和正被处理的该基板上的温度非一致性。进一步地,如果该基座环未被正确地对准于该基座,在该基座环和该基座之间的空隙可被缩减为该基座环接触到该基座的点。由于该基座通常在处理中围绕于其垂直轴旋转,任意在该基座和该环之间的接触会创造出成为镀在该晶片面上的颗粒或伴随该基板处理的其它问题。
因此需要自动定心基座环,能够在基座周围均匀地热膨胀,使得在该基座环和该基座之间的空隙在该基座周围基本上均匀地膨胀或收缩。
发明概述
在本发明的一方面,提供了自动定心基座环组件。该自动定心支撑环组件包括基座环支撑构件和至少三个从该基座环支撑构件处延伸的销。该自动定心支撑环组件同样包括在基座环支撑构件上可支撑的基座环。该基座环包括至少三个形成于该基座环底面内的制动器和具有中心点的缝隙。所述制动器的每一个容纳该基座环支撑构件的销中的一个。该基座环和该基座环支撑构件的热膨胀和收缩导致该销在该制动器内滑动使得形成该缝隙的边缘在该基座环的热膨胀和收缩期间基本上保持以该缝隙的中心点为中心。
在本发明的另一方面,提供了半导体处理系统。该半导体处理系统包括反应室,基板支撑组件,和自动定心基座环组件。该基板支撑组件和该自动定心基座环组件位于该反应室内。该自动定心基座环组件包括可操作地被连接到该反应室下表面的基座环支撑构件。该基座环支撑构件包括至少三个销,突出于该反应室下表面。该基座环在该基座环支撑构件上可支撑。该基座环具有至少三个制动器,形成于此处下表面中,以及该制动器的每一个被构造为容纳所述销中的一个。当该基座环热膨胀和收缩以保持该基板支撑组件在该自动定心基座环组件内的中心时,该销在该制动器内可滑动。
在本发明的又一方面,提供了用于半导体处理工具中的自动定心基座环组件。该自动定心基座环组件包括具有至少三个从至少一个侧构件处向同一方向延伸的销的基座环支撑。该销的顶端基本上形成了平面支架。该自动定心基座环组件同样包括具有至少三个形成于此处以容纳相应销的制动器的基座环。在该基座环的热膨胀和收缩期间,该基座环的热膨胀和收缩导致了该销在该制动器内改变相应位置以允许该基座环基本上保持以中心点为中心。
根据本发明的另一方面,提供了用于自动定心基座环组件中的基座环。该基座环包括定义了在其间厚度的上表面和下表面。缝隙贯穿该厚度而成形,且该缝隙具有中心点。至少三个制动器形成于该下表面中。该制动器为径向对齐于该中心点的长槽。
对于本领域技术人员来说,从已经以图示方式显示和描述的本发明实例的以下说明中将更明晰本发明的优点。在将被实现时,本发明可采用其他和不同的实例,以及其细节可以各种方式修改。相应地,附图和说明将被认为是本质上说明性的而非限制性的
附图说明
图1是在现有技术中普遍已知的反应室的剖视图;
图2是图1中反应室的横截面侧视图;
图3是在现有技术中普遍已知的基座环的仰视图;
图4是根据实例的具有自动定心基座环组件的反应室的横截面侧视图;
图5是图4中反应室的俯视图;
图6A是基座环支撑构件的实例的俯视图;
图6B是图6A中的基座环支撑构件的侧立面图;
图7A是基座环示例性实例的仰等距视图;
图7B是图7A中基座环的仰视图;
图7C是图7A中基座环的侧立面图
图8是自动定心基座环组件的实例的仰视图。
发明详述
参照图4-5,示出了半导体处理系统的反应室110,基板支撑组件112,和自动定心基座环组件114的实施例。该反应室110被示为水平流动,冷壁室。本领域技术人员应当理解,该反应室仅仅是说明目的的示例性实施例,以及该基板支撑组件112和该基座环组件114可被用于半导体处理室的其他类型中。在实施例中,该反应室110由石英构成以允许径向能量由此被传送,使得可通过该基板支撑组件112和/或该基座环组件114的组件来吸收该径向热量。
该基板支撑组件112至少部分地位于该反应室110中,如图4-5所示。在实施例中,该基板支撑组件112包括基座116,被构造为容纳基板118,基座支撑构件120,轴122,和电机(未示出)。该电机位于该反应室110外部并可操作地被连接到该轴122。该轴122位于基于从该反应室110的下表面而来的管124内。该基座支撑构件120可操作地连接到对立于该电机的轴122。该基座支撑构件120包括由该基座116所容纳用来可操作地将该基座116连接到该基座支撑构件120的多个足126。在操作中,该电机被构造为旋转该轴122,由此,使得该基座支撑构件120和该基座116随其相应地旋转。
如图4-5所示,自动定心基座环组件114的实施例位于该反应室110内并围绕该基板支撑组件112。在实施例中,该基座环组件114包括基座环支撑构件128和被支撑在该基座环支撑构件128上的基座环130。该基座环支撑构件128接触并从该反应室110的下表面向上延伸,该基座环130位于该基座环支撑构件128上使得该基座环130被放置在该基座116的外缘附近以有助于补偿在该基座116和基板118的外缘处的热损耗。
在实施例中,该基座环支撑构件128成形为基本上六角形的构件,如图6A-B所示。本领域技术人员应当理解,该基座环支撑构件128同样可成形为正方形,三角形,矩形,圆形,椭圆形,五角形的构件,或类似构件。本领域技术人员同样应当理解,可使用任意数量的侧构件132形成该基座环支撑构件128,其中每一个侧构件具有相同或不同长度,或该基座环支撑构件128可被成形为具有单个如圆形或椭圆形的侧构件132。在实施例中,该基座环支撑构件128由热保温材料构成,例如石英。在另一实施例中,该基座环支撑构件128由吸热材料构成,例如涂陶瓷的石墨。本领域技术人员应当理解,该基座环支撑构件128可被任意基本上相对于在基板处理期间可被引入该反应室110中的处理气体为惰性并适合承受高温的材料构成。
该基座环支撑构件128同样包括多个系在该侧构件132上的定位构件134,如图6A-6B所示。在实施例中,该基座环支撑构件128包括三个定位构件134以彼此大约120°间距分隔。在另一实施例中,四个定位构件134以彼此大约90°间距分隔。在又一实施例中,三个定位构件134在该基座环支撑构件128周围以彼此不等间距分隔。本领域技术人员应当理解,该基座环支撑构件128也包括系于此处的任意数量的定位构件134,以及该定位构件134可彼此以任意方式的间距进行分隔。在实施例中,该定位构件134整体与该侧构件132一起成形以构造该基座环支撑构件128。在另一实施例中,该定位构件134与该侧构件132分别成形并随后被可操作地系于此处。
在实施例中,该定位构件134以基本上垂直的方式自该侧构件132延伸,如图6A-6B所示。每一个定位构件134自该侧构件132的上表面和下表面都延伸至该定位构件134被连接处。当被定位于该反应室110内时,该基座环支撑构件128的每一个定位构件134的下部在形成于该反应室110的下表面中的凹处136(图4)内被容纳。这种在该基座环支撑构件128和该反应室110之间的连接阻止了该基座环支撑构件128相对于该反应室110的旋转和移动,在提供了支撑该基座环130的稳固基部时。每一个定位构件134包括贯穿其厚度所形成的缝隙138。该缝隙138以相对于通过该基座环支撑构件128的侧构件132所形成平面的基本上垂直方式进行对齐。该缝隙138可以是穿孔或盲孔。
在实施例中,将销140插入形成于该定位构件134内的孔138的每一个中,如图6A-6B所示。在另一实施例中,该销140整体与该侧构件132一起成形为单个部件,具有或不具有该定位构件134。在实施例中,该销140包括主体142和连接构件144,其中该连接构件144延伸自该主体142。在实施例中,该主体142的至少一部分被插入组件的缝隙138中使得该主体142和该整个连接构件144的至少一部分延伸自该定位构件134。在另一实施例中,该整个主体142被置于缝隙138内使得该连接构件144的至少一部分延伸自该定位构件134。每一个销140的连接构件144的顶端被配置以被该基座环130所容纳,因此提供了在该基座环支撑构件128和该基座环130(图4)之间的连接。在实施例中,每一个销140的顶端基本上在该基座环支撑构件128的侧构件132之上延伸相同距离,因此提供了可安装该基座环130的基本上水平的平面支架。本领域技术人员应当理解,虽然优选为该销140的顶端提供了该基座环130的基本上水平的平面支架,该销140的顶端可同样被构造为提供基座环130的非水平,或斜的,平面支架,或非平面支架。在实施例中,该销140和该连接构件144由石英构成,但本领域技术人员应当理解,该销140和该连接构件144可由任意基本上相对于被引入该反应室中的处理气体为惰性的其他材料构成。该销140被构造为提供该基座环130的结构上的支架,当允许该基座环130自由地热膨胀和收缩时。
如图7A-7C所示,该基座环130的实施例包括下表面148,用来最接近该室的进气口放置的前缘150,用来最接近该室的排气口放置的后缘152,以及形成于该厚度中的缝隙154。在实施例中,该基座环130由石墨构成。本领域技术人员应当理解,该基座环130可被任意相对于被引入该反应室110中的处理气体为惰性的材料构成,当其在使用处理基板的高温处能够吸收并发散径向能量时。本领域技术人员同样应当理解,图7A-7B中的该基座环130是方便对其参照和描述的示例性实施例,但本领域技术人员应当理解,可由任意数量部件或适合用于基板处理中的任意类型材料来构成该基座环130。在图示的实施例中,该基座环130由不同于该基座环支撑构件128的材料构成使得该基座环130的热膨胀系数不同于该基座环支撑构件128的热膨胀系数。例如当该基座环130由石墨构成而该基座环支撑构件128由石英构成时,在加热时该基座环130将相对于该基座环支撑构件128针对给定温度变化而膨胀更大数量。
当被安装在该反应室110中时,如图4所示,该基座环130的下表面148被指向该反应室110的下方内表面,该基座环130的前缘150被指向该反应室110的入口端156,以及该基座环130的边缘限定了缝隙154,其中邻近于该基座116的外缘。该基座环130被构造为与在处理期间支撑该基板118的基座116相同的方式来吸收径向热量。在处理期间,该基座116和该基板118趋于失去其外缘的热量。该基座环130直接以间距分隔方式定位于该基座116的外缘附近,因此阻止了该基座116和该基座环130之间的连接,当补偿该基座116和基板118否则将体验来自该外缘的热损耗的重要部分时。该改进的自动定心基座环组件被构造为保持在该基座环130的缝隙154和该基座116的外缘之间的基本上均匀间距,当在处理期间基座116,基座环130,以及该基板118的温度变化时。该间距允许该基座116在处理期间旋转时没有摩擦和引起颗粒的产生。
在实施例中,该基座环130包括三个形成于该下表面148中的制动器158,如图7A-7B所示。在另一实施例中,该基座环130包括超过三个形成于该下表面148中的制动器158。每一个形成于该基座环130中的制动器158被构造为容纳销140的连接构件144,从该基座环支撑构件128的定位构件134处延伸用来在该反应室110中定位和支撑该基座环130。本领域技术人员应当理解,该基座环130应包括用来提供该基座环130和该基座环支撑构件128之间稳固连接的形成于该底面中的三个制动器158的最小数量。
该基座环支撑构件128被构造为相对于该反应室110的下表面以间距分隔的关系支撑该基座环130,也以相对于该基座116以基本上固定定位方式保持该基座环130,如图4-5所示。从该基座环支撑构件128处延伸来的销140的长度提供了在该反应室110的下表面和该基座环130的上表面146(图7C)之间的预定间距。注意在其他设置中该下表面不需要代表该反应室的底板。由于在该反应室110内的该基座116的高度可能根据不同工具或根据不同模型改变,可修改该销140的长度以允许该基座环130的上表面146被正确地与该基座116对齐。在实施例中,该销140可从该基座环支撑构件128的定位构件134的缝隙138处移动,因而允许移动该销140并使其重新工作以提供在该反应室110的下表面和该基座环130之间的特定间距。在另一实施例中,该销140可被重新放置使得该销140可被移动并被不同长度的销140取代,因而修改在该反应室110的下表面和该基座环130之间的间距。
在实施例中,该制动器158的每一个成形为长槽,如图7B所示。本领域技术人员应当理解,该制动器158可以成形为任意足够容纳自该基座环支撑构件128处延伸来的销140顶端的形状。本领域技术人员同样应当理解,该制动器158都可以成形为相同形状,至少一个该制动器158可成形为具有与其他制动器158不同的形状,或每一个制动器158可成形为与其他所有制动器158不同的形状,使得每一个制动器158被构造为允许此处容纳到的销140以在该制动器158内相对于该缝隙154中心的基本上径向方式传送。在实施例中,该制动器158的每一个仅仅延伸入该基座环130厚度的一部分,例如作为盲槽。在另一实施例中,该制动器158的每一个延伸贯穿该基座环130的整个厚度,即作为穿槽。本领域技术人员应当理解,该制动器158被构造为容纳自该基座环支撑构件128处延伸来的销140,其中该销140的连接构件144连接了包括该制动器158的侧面和/或基面的相应制动器158的至少一面。
在图7B所示的示例性实施例中,该制动器158位于该基座环130的前缘150附近并以相对于在该基座环130内形成的该缝隙154中心的基本上径向方式来取向。该位于该基座环130的后缘152附近的制动器158以相对于该前缘150附近的制动器158的角度取向,以及同样地以相对于在该基座环130内形成的该缝隙154中心的基本上径向方式来取向。本领域技术人员应当理解,该制动器158的相互对应的取向会基于在该基座环130内形成的制动器158的数量和位置而变化,但是每一个制动器158应当被构造为允许此处所容纳的销140在该制动器158内相对于该缝隙154的中心以基本上径向方式来传送和滑动。该制动器158被构造为容纳保持在该基座环130和该基座环支撑构件128之间连接的销140,当允许该基座环130随着该基座环130的温度上升或下降而自由地且基本上一致地进行热膨胀和收缩时。该制动器158通常相对于形成于该基座环130中的缝隙154的中心点以径向方式对齐。
在示例性实施例中,该基座环130由石墨构成且由此包括该销140和连接构件144的基座环支撑构件128,由石英构成使得该基座环130的热膨胀系数不同于该基座环支撑构件128的热膨胀系数。石墨组件通常被涂有类似SIC或其他陶瓷的惰性材料,但石墨趋于控制质量以及随之所述组件的热膨胀系数。这样,当该反应室110内的温度上升时,该基座环130和该基座环支撑构件128热膨胀,但是该基座环130比该基座环支撑构件128热膨胀更多。该基座环130的外缘的热膨胀从该缝隙154的中心膨胀开来,当定义该缝隙154的内缘朝着该缝隙154的中心向内膨胀时。由于该基座116在该基座环130的缝隙154内以类似方式热膨胀,在该基座116的外缘和定义该缝隙154的该基座环130的内表面之间的空隙间距缩小。由于在该基座环130和该基座环支撑构件128之间的热膨胀系数的不同,该基座环130趋于比该基座环支撑构件128向外热膨胀更多。相应地,随着该基座环130热膨胀,该销140的连接构件144会在该基座环130的相应制动器158内向内径向滑动。该基座环支撑构件128的连接构件144的滑动允许该基座环130进行热膨胀,在同样允许该基座环130的缝隙154保持着基本上围绕该基座116居中时。但是,如果该基座环130的制动器158的至少一个未被配置为允许该基座环130比该基座环支撑构件128以径向距离热膨胀更多,则该基座环130将相对于该基座116而偏离中心以及在该基座环130和该基座116之间的空隙将在该基座的整个外缘周围基本上不均匀。当该基座116周围的缝隙154变为偏离中心时,该基座和基板118的加热中的外形变得不均匀,由此影响在该基板118上的沉积特性。
该自动定心基座环组件114在该反应室110中围绕该基板支撑组件112居中。该基座环支撑构件128可操作地将该基座环130连接到该反应室110,当同样以相对于该基座116的间距分隔来支撑该基座环130时。随着该反应室110内温度的上升或下降,该基座环130相对于该基座116热膨胀或收缩。在该基座环支撑构件128的销140和形成于该基座环130内的相应制动器之间的连接允许该基座环130来相对于该基座116热膨胀或收缩使得在该基座116和该基座环130之间的空隙基本上保持均匀。每一个销140在该基座环130比该基座环支撑构件128膨胀或收缩更多时在相应制动器158内自由滑动,其中该销140相对于该基座116的中心点以径向方式滑动以确保该基座环130的径向膨胀相对于该基座116的中心基本上均匀。本领域技术人员应当理解,每一个销140在该相应制动器158内独立可滑动以允许该基座环130的定位部件的热膨胀围绕该制动器158。尽管所述说明指出该销140在该制动器158内滑动,本领域技术人员应当理解,是该基座环130相对于该基座环支撑构件128的递增的径向向外热膨胀引起了该销140在该制动器158内滑动。换句话说,尽管该基座环130和该基座环支撑构件128都径向向外热膨胀,该基座环130以较快和较高速率热膨胀使得该基座环130滑过该基座环支撑构件128的销140,其中在该制动器158中的销140的相应位置变化且这样的在位置上的变换通过该销140在该制动器158内滑动或该制动器158相对于该销140滑动来实现。
当已经描述了本发明的优选实施例时,应当理解,本发明未被如此限制,可以做出不背离本发明的修改。本发明的范围由附属权利要求限定,来自该权利要求含义中的所有装置,过程,和方法,或逐字地或等价地,在此处被有意包括。
Claims (23)
1.一种自动定心基座环组件,包括:
基座环支撑构件和至少三个从所述基座环支撑构件延伸的销;和
可支撑在所述基座环支撑构件上的基座环,所述基座环包括至少三个成形于所述基座环底面中的制动器和具有中心点的缝隙,其中所述制动器各自容纳所述至少三个销中的一个;
其中所述基座环和所述基座环支撑构件的热膨胀和收缩导致所述销在所述制动器内滑动,使得在所述基座环的热膨胀和收缩期间,形成所述缝隙的边缘基本上保持围绕所述缝隙的所述中心点为中心。
2.如权利要求1所述的自动定心基座环组件,其中所述制动器成形为长槽。
3.如权利要求2所述的自动定心基座环组件,其中所述拉长的制动器相对于所述缝隙的所述中心点以基本上径向方式取向。
4.如权利要求1所述的自动定心基座环组件,其中所述制动器仅仅贯穿所述基座环厚度的一部分成形。
5.如权利要求1所述的自动定心基座环组件,其中所述基座环由石墨构成并且所述基座环支撑构件由石英构成。
6.如权利要求1所述的自动定心基座环组件,其中所述基座环支撑构件由与所述基座环不同的材料构成。
7.如权利要求1所述的自动定心基座环组件,其中所述缝隙被构造为围绕基座,以及形成所述缝隙的所述边缘从所述基座的外缘处间距分隔以在其间形成空隙。
8.如权利要求7所述的自动定心基座环组件,其中当所述基座环和所述基座环支撑构件热膨胀和收缩时,所述空隙在所述基座环和所述基座之间基本上保持均匀。
9.一种半导体处理系统,包括:
反应室;
至少部分位于所述反应室中的基板支撑组件;和
位于所述反应室中的自动定心基座环组件,所述自动定心基座环组件包括:
基座环支撑构件,可操作地连接到所述反应室的下表面,所述基座环支撑构件包括至少三个从所述反应室的所述下表面突出的销;和
可支撑在所述基座环支撑构件上的基座环,所述基座环具有至少三个形成于所述基座环的底面中的制动器,并且所述制动器各自被构造为容纳所述至少三个销中的一个,其中当所述基座环和所述基座环支撑构件热膨胀和收缩以保持所述基板支撑组件在所述自动定心基座环组件的中心时,所述销在所述制动器内可滑动。
10.如权利要求9所述的半导体处理系统,其中所述基座环和所述基座环支撑构件由不同的材料构成。
11.如权利要求9所述的半导体处理系统,其中所述制动器相对于所述基板支撑组件的中心点形成径向路线。
12.如权利要求9所述的半导体处理系统,其中所述销中的每一个在所述基座环热膨胀和收缩期间独立地可滑动。
13.一种用于半导体处理工具中的自动定心基座环组件,包括:
基座环支架,所述基座环支架具有至少三个从至少一个侧构件处以相同方向延伸的销,其中所述至少三个销中每一个的顶端形成基本上平面的支架;
基座环,所述基座环具有至少三个制动器,所述制动器形成在所述基座环中以容纳所述至少三个销,使得在所述基座环的热膨胀和收缩期间,所述基座环的热膨胀或收缩导致所述销改变在所述制动器内的相对位置,以允许所述基座环基本上保持围绕中心点为中心。
14.如权利要求13所述的自动定心基座环组件,其中所述制动器成形为长槽。
15.如权利要求14所述的自动定心基座环组件,其中所述制动器相对于所述中心点以径向方式对齐。
16.如权利要求13所述的自动定心基座环组件,其中所述基座环包括在其中形成的缝隙,所述缝隙被构造为围绕基座,从而提供在限定所述缝隙的所述基座环的边缘和所述基座之间的基本上均匀空隙。
17.如权利要求16所述的自动定心基座环组件,其中所述基座环的热膨胀和收缩期间,在所述制动器内所述销的相对位置的所述变化导致在限定所述缝隙的所述基座环的所述边缘和所述基座之间的所述空隙保持基本上均匀。
18.一种用于自动定心基座环组件的基座环,包括:
限定在其间的厚度的上表面和下表面;
贯穿所述厚度而形成的缝隙,所述缝隙具有中心点;
成形于该下表面中的至少三个制动器,其中所述制动器是相对于所述中心点径向对齐的长槽。
19.如权利要求18所述的基座环,其中所述制动器在所述缝隙周围均匀间隔。
20.如权利要求18所述的基座环,其中所述制动器在所述缝隙周围不均匀间隔。
21.如权利要求18所述的基座环,进一步包括成形于该下表面中的超过三个的制动器。
22.如权利要求18所述的基座环,其中所述至少三个制动器各自仅仅贯穿所述厚度的一部分成形。
23.如权利要求18所述的基座环,其中所述至少三个制动器中的至少一个贯穿该整个厚度成形。
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US12/263,345 US8801857B2 (en) | 2008-10-31 | 2008-10-31 | Self-centering susceptor ring assembly |
US12/263,345 | 2008-10-31 | ||
PCT/US2009/059501 WO2010062476A1 (en) | 2008-10-31 | 2009-10-05 | Self-centering susceptor ring assembly |
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US20100107973A1 (en) | 2010-05-06 |
WO2010062476A1 (en) | 2010-06-03 |
KR102071681B1 (ko) | 2020-01-30 |
US11387137B2 (en) | 2022-07-12 |
KR20160040720A (ko) | 2016-04-14 |
KR20110084271A (ko) | 2011-07-21 |
CN102197471B (zh) | 2013-08-21 |
US8801857B2 (en) | 2014-08-12 |
US20140338596A1 (en) | 2014-11-20 |
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