CN102194660A - 半导体器件制造方法和衬底加工方法及设备 - Google Patents

半导体器件制造方法和衬底加工方法及设备 Download PDF

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Publication number
CN102194660A
CN102194660A CN2011100484504A CN201110048450A CN102194660A CN 102194660 A CN102194660 A CN 102194660A CN 2011100484504 A CN2011100484504 A CN 2011100484504A CN 201110048450 A CN201110048450 A CN 201110048450A CN 102194660 A CN102194660 A CN 102194660A
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CN
China
Prior art keywords
silicon
film
containing gas
substrate
silicon film
Prior art date
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Pending
Application number
CN2011100484504A
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English (en)
Chinese (zh)
Inventor
王杰
笠原修
汤浅和宏
西田圭吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Publication of CN102194660A publication Critical patent/CN102194660A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

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  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
CN2011100484504A 2010-02-24 2011-02-23 半导体器件制造方法和衬底加工方法及设备 Pending CN102194660A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-038599 2010-02-24
JP2010038599A JP5495847B2 (ja) 2010-02-24 2010-02-24 半導体装置の製造方法、基板処理装置および基板処理方法

Publications (1)

Publication Number Publication Date
CN102194660A true CN102194660A (zh) 2011-09-21

Family

ID=44476865

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100484504A Pending CN102194660A (zh) 2010-02-24 2011-02-23 半导体器件制造方法和衬底加工方法及设备

Country Status (5)

Country Link
US (1) US20110207302A1 (https=)
JP (1) JP5495847B2 (https=)
KR (1) KR101233031B1 (https=)
CN (1) CN102194660A (https=)
TW (1) TWI443747B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094077A (zh) * 2011-10-28 2013-05-08 东京毅力科创株式会社 硅氧化物膜的成膜方法
CN103898601A (zh) * 2012-12-27 2014-07-02 东京毅力科创株式会社 晶种层的形成方法、硅膜的成膜方法以及成膜装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5337269B2 (ja) * 2010-04-27 2013-11-06 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
JP4967066B2 (ja) * 2010-04-27 2012-07-04 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
KR20110122523A (ko) * 2010-05-04 2011-11-10 삼성전자주식회사 반도체 메모리 소자 및 그의 형성방법
JP5544343B2 (ja) * 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
JP5741382B2 (ja) * 2011-09-30 2015-07-01 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP5774439B2 (ja) * 2011-10-14 2015-09-09 株式会社日本製鋼所 レーザ処理装置
JP6022272B2 (ja) * 2012-09-14 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2015070233A (ja) 2013-09-30 2015-04-13 株式会社東芝 半導体装置の製造方法
CN104701064B (zh) * 2015-03-26 2015-12-09 江苏现代电力科技股份有限公司 基于柔性分合闸技术的智能集成中压交流真空开关设备
JP6078604B2 (ja) * 2015-09-24 2017-02-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびガス供給系
JP7058575B2 (ja) * 2018-09-12 2022-04-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching
CN115332128A (zh) * 2022-10-14 2022-11-11 西安奕斯伟材料科技有限公司 晶圆载具管理系统及方法

Citations (3)

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US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US6566711B1 (en) * 1991-08-23 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film
JP4019584B2 (ja) * 1999-12-27 2007-12-12 株式会社Ｉｈｉ 半導体膜の形成方法

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Publication number Priority date Publication date Assignee Title
JPH06342763A (ja) * 1993-05-31 1994-12-13 Sanyo Electric Co Ltd 多結晶半導体膜の形成方法
JPH07162002A (ja) * 1993-12-06 1995-06-23 Sharp Corp 半導体膜の製造方法及び薄膜トランジスタの製造方法
US6159866A (en) * 1998-03-02 2000-12-12 Applied Materials, Inc. Method for insitu vapor generation for forming an oxide on a substrate
JP2000021781A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 半導体装置の製造方法
JP2002110997A (ja) * 2000-09-29 2002-04-12 Toshiba Corp 多結晶薄膜トランジスタの製造方法
JP4456533B2 (ja) * 2005-06-14 2010-04-28 東京エレクトロン株式会社 シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム
JP5023004B2 (ja) * 2008-06-30 2012-09-12 株式会社日立国際電気 基板処理方法及び基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US6566711B1 (en) * 1991-08-23 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film
JP4019584B2 (ja) * 1999-12-27 2007-12-12 株式会社Ｉｈｉ 半導体膜の形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094077A (zh) * 2011-10-28 2013-05-08 东京毅力科创株式会社 硅氧化物膜的成膜方法
CN103094077B (zh) * 2011-10-28 2016-09-07 东京毅力科创株式会社 硅氧化物膜的成膜方法
CN103898601A (zh) * 2012-12-27 2014-07-02 东京毅力科创株式会社 晶种层的形成方法、硅膜的成膜方法以及成膜装置
CN103898601B (zh) * 2012-12-27 2018-03-27 东京毅力科创株式会社 晶种层的形成方法、硅膜的成膜方法以及成膜装置

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Publication number Publication date
JP5495847B2 (ja) 2014-05-21
US20110207302A1 (en) 2011-08-25
TW201142949A (en) 2011-12-01
KR101233031B1 (ko) 2013-02-13
JP2011176095A (ja) 2011-09-08
TWI443747B (zh) 2014-07-01
KR20110097709A (ko) 2011-08-31

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Application publication date: 20110921