TWI443747B - 半導體裝置製造方法以及基板處理方法及設備 - Google Patents

半導體裝置製造方法以及基板處理方法及設備 Download PDF

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Publication number
TWI443747B
TWI443747B TW100106184A TW100106184A TWI443747B TW I443747 B TWI443747 B TW I443747B TW 100106184 A TW100106184 A TW 100106184A TW 100106184 A TW100106184 A TW 100106184A TW I443747 B TWI443747 B TW I443747B
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TW
Taiwan
Prior art keywords
film
gas
process chamber
oxidized
germanium film
Prior art date
Application number
TW100106184A
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English (en)
Chinese (zh)
Other versions
TW201142949A (en
Inventor
王杰
笠原修
湯浅和宏
西田圭吾
Original Assignee
日立國際電氣股份有限公司
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Application filed by 日立國際電氣股份有限公司 filed Critical 日立國際電氣股份有限公司
Publication of TW201142949A publication Critical patent/TW201142949A/zh
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Publication of TWI443747B publication Critical patent/TWI443747B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
TW100106184A 2010-02-24 2011-02-24 半導體裝置製造方法以及基板處理方法及設備 TWI443747B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010038599A JP5495847B2 (ja) 2010-02-24 2010-02-24 半導体装置の製造方法、基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
TW201142949A TW201142949A (en) 2011-12-01
TWI443747B true TWI443747B (zh) 2014-07-01

Family

ID=44476865

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100106184A TWI443747B (zh) 2010-02-24 2011-02-24 半導體裝置製造方法以及基板處理方法及設備

Country Status (5)

Country Link
US (1) US20110207302A1 (https=)
JP (1) JP5495847B2 (https=)
KR (1) KR101233031B1 (https=)
CN (1) CN102194660A (https=)
TW (1) TWI443747B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5337269B2 (ja) * 2010-04-27 2013-11-06 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
JP4967066B2 (ja) * 2010-04-27 2012-07-04 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
KR20110122523A (ko) * 2010-05-04 2011-11-10 삼성전자주식회사 반도체 메모리 소자 및 그의 형성방법
JP5544343B2 (ja) * 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
JP5741382B2 (ja) * 2011-09-30 2015-07-01 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP5774439B2 (ja) * 2011-10-14 2015-09-09 株式会社日本製鋼所 レーザ処理装置
JP5829196B2 (ja) * 2011-10-28 2015-12-09 東京エレクトロン株式会社 シリコン酸化物膜の成膜方法
JP6022272B2 (ja) * 2012-09-14 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP5947710B2 (ja) * 2012-12-27 2016-07-06 東京エレクトロン株式会社 シード層の形成方法、シリコン膜の成膜方法および成膜装置
JP2015070233A (ja) 2013-09-30 2015-04-13 株式会社東芝 半導体装置の製造方法
CN104701064B (zh) * 2015-03-26 2015-12-09 江苏现代电力科技股份有限公司 基于柔性分合闸技术的智能集成中压交流真空开关设备
JP6078604B2 (ja) * 2015-09-24 2017-02-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびガス供給系
JP7058575B2 (ja) * 2018-09-12 2022-04-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching
CN115332128A (zh) * 2022-10-14 2022-11-11 西安奕斯伟材料科技有限公司 晶圆载具管理系统及方法

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Publication number Priority date Publication date Assignee Title
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
JPH06342763A (ja) * 1993-05-31 1994-12-13 Sanyo Electric Co Ltd 多結晶半導体膜の形成方法
JPH07162002A (ja) * 1993-12-06 1995-06-23 Sharp Corp 半導体膜の製造方法及び薄膜トランジスタの製造方法
US6159866A (en) * 1998-03-02 2000-12-12 Applied Materials, Inc. Method for insitu vapor generation for forming an oxide on a substrate
JP2000021781A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 半導体装置の製造方法
JP4019584B2 (ja) * 1999-12-27 2007-12-12 株式会社Ｉｈｉ 半導体膜の形成方法
JP2002110997A (ja) * 2000-09-29 2002-04-12 Toshiba Corp 多結晶薄膜トランジスタの製造方法
JP4456533B2 (ja) * 2005-06-14 2010-04-28 東京エレクトロン株式会社 シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム
JP5023004B2 (ja) * 2008-06-30 2012-09-12 株式会社日立国際電気 基板処理方法及び基板処理装置

Also Published As

Publication number Publication date
JP5495847B2 (ja) 2014-05-21
US20110207302A1 (en) 2011-08-25
TW201142949A (en) 2011-12-01
KR101233031B1 (ko) 2013-02-13
CN102194660A (zh) 2011-09-21
JP2011176095A (ja) 2011-09-08
KR20110097709A (ko) 2011-08-31

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