CN102193262B - 电光装置以及电子设备 - Google Patents

电光装置以及电子设备 Download PDF

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Publication number
CN102193262B
CN102193262B CN201110058400.4A CN201110058400A CN102193262B CN 102193262 B CN102193262 B CN 102193262B CN 201110058400 A CN201110058400 A CN 201110058400A CN 102193262 B CN102193262 B CN 102193262B
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CN
China
Prior art keywords
electrode
pixel electrode
capacitive
light
electro
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CN201110058400.4A
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English (en)
Chinese (zh)
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CN102193262A (zh
Inventor
森胁稔
安川昌宏
胁田贤
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138 East Lcd Display Development Co ltd
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Seiko Epson Corp
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
CN201110058400.4A 2010-03-10 2011-03-10 电光装置以及电子设备 Active CN102193262B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010052938A JP5782676B2 (ja) 2010-03-10 2010-03-10 電気光学装置及び電子機器、並びに電気光学装置の製造方法
JP052938/2010 2010-03-10

Publications (2)

Publication Number Publication Date
CN102193262A CN102193262A (zh) 2011-09-21
CN102193262B true CN102193262B (zh) 2015-08-19

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Family Applications (1)

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Country Status (3)

Country Link
US (1) US8896775B2 (enExample)
JP (1) JP5782676B2 (enExample)
CN (1) CN102193262B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5782676B2 (ja) * 2010-03-10 2015-09-24 セイコーエプソン株式会社 電気光学装置及び電子機器、並びに電気光学装置の製造方法
WO2014136610A1 (ja) * 2013-03-08 2014-09-12 シャープ株式会社 立体表示装置
CN104049403B (zh) * 2013-03-11 2017-05-31 北京京东方光电科技有限公司 触控彩膜基板及其制作方法、显示面板和显示装置
CN103698948B (zh) * 2013-12-20 2016-07-06 京东方科技集团股份有限公司 一种液晶面板及液晶显示器
KR101682079B1 (ko) * 2013-12-30 2016-12-05 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN103941506B (zh) * 2014-03-31 2017-06-16 上海中航光电子有限公司 一种像素结构、显示面板、显示装置及其制造方法
JP6303748B2 (ja) * 2014-04-14 2018-04-04 セイコーエプソン株式会社 電気光学装置、光学ユニット、及び電子機器
JP2016218382A (ja) 2015-05-26 2016-12-22 セイコーエプソン株式会社 電気光学装置、及び電子機器
JP6597192B2 (ja) 2015-10-30 2019-10-30 セイコーエプソン株式会社 電気光学装置、電子機器、及び電気光学装置の駆動方法
JP6044700B2 (ja) * 2015-12-01 2016-12-14 セイコーエプソン株式会社 電気光学装置、及び電子機器
CN105929610B (zh) * 2016-07-01 2019-05-24 上海中航光电子有限公司 一种阵列基板和包括其的液晶显示面板
KR102599536B1 (ko) * 2017-01-26 2023-11-08 삼성전자 주식회사 생체 센서를 갖는 전자 장치
CN108873527A (zh) * 2018-07-25 2018-11-23 Oppo（重庆）智能科技有限公司 阵列基板、液晶显示面板、装置及制备阵列基板的方法
JP6753450B2 (ja) 2018-11-12 2020-09-09 セイコーエプソン株式会社 電気光学装置用基板、電気光学装置、電子機器
KR102819878B1 (ko) * 2019-03-15 2025-06-12 삼성디스플레이 주식회사 표시 장치
CN110854137B (zh) * 2019-11-22 2022-12-02 京东方科技集团股份有限公司 显示面板、阵列基板及其制造方法
JP7476695B2 (ja) * 2020-07-08 2024-05-01 セイコーエプソン株式会社 電気光学装置及び電子機器
JP7447724B2 (ja) * 2020-07-28 2024-03-12 セイコーエプソン株式会社 電気光学装置、および電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1195786A (zh) * 1997-02-27 1998-10-14 精工爱普生株式会社 液晶装置及其制造方法和投影型显示装置
CN1550826A (zh) * 2003-05-16 2004-12-01 ������������ʽ���� 液晶装置，有源矩阵基板，显示装置以及电子设备
CN1713059A (zh) * 2004-06-23 2005-12-28 精工爱普生株式会社 电光装置和电子设备以及电光装置的制造方法
JP3767305B2 (ja) * 2000-03-01 2006-04-19 ソニー株式会社 表示装置およびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW459275B (en) * 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
JP3731447B2 (ja) * 2000-06-15 2006-01-05 セイコーエプソン株式会社 電気光学装置及びその製造方法
JP3700697B2 (ja) * 2002-02-12 2005-09-28 セイコーエプソン株式会社 電気光学装置及び電子機器
TWI261797B (en) 2002-05-21 2006-09-11 Seiko Epson Corp Electro-optical device and electronic apparatus
JP3700679B2 (ja) * 2002-05-21 2005-09-28 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4314926B2 (ja) * 2003-08-04 2009-08-19 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP4055764B2 (ja) * 2004-01-26 2008-03-05 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5040222B2 (ja) * 2005-12-13 2012-10-03 ソニー株式会社 表示装置
JP2008198692A (ja) * 2007-02-09 2008-08-28 Seiko Epson Corp 電気光学装置の製造方法
US8144281B2 (en) * 2007-08-09 2012-03-27 Seiko Epson Corporation Electro-optical device having a light shielding film with first, second, and third portions
JP5217752B2 (ja) * 2008-08-05 2013-06-19 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5782676B2 (ja) * 2010-03-10 2015-09-24 セイコーエプソン株式会社 電気光学装置及び電子機器、並びに電気光学装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1195786A (zh) * 1997-02-27 1998-10-14 精工爱普生株式会社 液晶装置及其制造方法和投影型显示装置
JP3767305B2 (ja) * 2000-03-01 2006-04-19 ソニー株式会社 表示装置およびその製造方法
CN1550826A (zh) * 2003-05-16 2004-12-01 ������������ʽ���� 液晶装置，有源矩阵基板，显示装置以及电子设备
CN1713059A (zh) * 2004-06-23 2005-12-28 精工爱普生株式会社 电光装置和电子设备以及电光装置的制造方法

Also Published As

Publication number Publication date
JP5782676B2 (ja) 2015-09-24
US8896775B2 (en) 2014-11-25
JP2011186293A (ja) 2011-09-22
CN102193262A (zh) 2011-09-21
US20110222008A1 (en) 2011-09-15

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Effective date of registration: 20241017

Address after: Ai Erlandubailin

Patentee after: 138 East LCD Display Development Co.,Ltd.

Country or region after: Ireland

Address before: Tokyo, Japan

Patentee before: Seiko Epson Corp.

Country or region before: Japan

TR01 Transfer of patent right