CN102171816B - 配线板、半导体装置及其制造方法 - Google Patents

配线板、半导体装置及其制造方法 Download PDF

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Publication number
CN102171816B
CN102171816B CN200980139213XA CN200980139213A CN102171816B CN 102171816 B CN102171816 B CN 102171816B CN 200980139213X A CN200980139213X A CN 200980139213XA CN 200980139213 A CN200980139213 A CN 200980139213A CN 102171816 B CN102171816 B CN 102171816B
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heat radiation
radiation projection
heat
semiconductor element
insulating resin
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CN102171816A (zh
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下石坂望
中村嘉文
长尾浩一
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

本发明公开了一种半导体装置，其包括具有有源元件区域(1a)的半导体元件(1)，形成于半导体元件主表面上的多个元件电极(2)，通过结合构件(8、9)连接至一个或多个元件电极上的外部端子(6、7)，形成于半导体元件主表面上的一个或多个第一散热突起(4)，覆盖半导体元件的主表面和第一散热突起的绝缘树脂层(10)，以及散热介质(11)，其接触绝缘树脂层的与接触第一散热突起的表面的一侧相反的一侧。有源元件区域的至少一部分被包含在第一散热突起底表面下面的区域内，并且在有源元件区域内第一散热突起没有被结合至外部端子。第一散热突起的导热率大于绝缘树脂层的导热率，并且绝缘树脂层从第一散热突起的表面至散热介质的厚度小于绝缘树脂层从半导体元件的主表面至散热介质的厚度。因此，提高了热从被安装的半导体元件的有源元件区域至散热介质的散逸速度。

Description

配线板、半导体装置及其制造方法
技术领域
本发明涉及安装在配线板的半导体元件的散热结构，及其制造方法。
背景技术
例如，在专利文献1中公开了一种允许从安装在配线板上的半导体元件的有源元件区域产生的热散逸到配线板上的结构。根据该结构，至少一个散热突起被设置于半导体元件被面朝下安装于其上的板上，使得突起与半导体元件对置，在它们之间具有很小的空间。另外，导热绝缘体被充填到半导体元件和散热突起之间的缝隙中。
下文中，将参照图13描述传统示例的半导体装置的制造方法。图13是传统示例的半导体装置的剖视图。
在图13中，导体配线42和散热导体配线43被形成在配线板41上。散热突起44被形成在散热导体配线43上。经由半导体元件45的元件电极46和形成于元件电极46上的连接突起电极47，半导体元件45被倒装在配线板41上。
用虚线示意的参考标记48表示半导体元件45的有源元件区域。接地电极49被设置于有源元件区域48上。表面保护膜50被形成在半导体元件45的表面上。导热绝缘体51被充填到半导体元件45和配线板41之间。
根据如上所述的结构，在有源元件区域48中产生的热被允许通过接地电极49在水平方向上散逸，经由导热绝缘体51散逸，并且然后从散热突起44通过散热导体配线43散逸至配线板41。另外，因为散热突起44和半导体元件45没有连接，所以，与图14中示出的一般的散热结构(例如，参考专利文献2)相比，具有减小了有源元件区域48的电特性中的变化的优势。
图14的半导体装置具有其中半导体元件45和配线板41被通过连接突起电极47相连接的散热结构。由于此原因，由于在将半导体元件45倒装到配线板41上的时候的载荷，或者由于安装后半导体元件45和配线板41之间的热膨胀系数差导致的作用在有源元件区域48上的应力，而会发生有源元件区域48的电特性的变化。相反，例如图13所示的其中散热突起44和半导体元件45被相连接的结构减少了这种应力的发生。
现有技术文献
专利文献
[专利文献1]JP 10-65072A
[专利文献2]JP 2000-286368A
发明内容
本发明解决的问题
在如上所述的传统的半导体装置中，为了提高从有源元件区域48产生的热的散逸速度，要求放置在热产生源，也就是有源元件区域48，附近的接地电极49被制成得很厚，以增加热在接地电极49中在水平方向上的散逸速度。然而，在上述传统的半导体装置中，因为接地电极49被形成在形成半导体元件45的配线层的步骤中，所以其不能形成任意的厚度(通常约0.5μm)。由于此原因，为热在接地电极49中在水平方向上的散逸速度强加了限制，这减慢了热从有源元件区域48至配线板41的散逸速度。
本发明解决了上述传统问题，并且其目的是提供一种提高了热从半导体元件的有源元件区域至配线板的散逸速度的半导体装置及其制造方法。
解决问题的方法
本发明的半导体装置包括：半导体元件，其具有有源元件区域；多个元件电极，它们被形成在半导体元件的主表面上；外部端子，其被经由连接构件连接至一个或多个元件电极上；一个或多个第一散热突起，它们被形成在半导体元件的主表面上；绝缘树脂层，其覆盖半导体元件的主表面和第一散热突起；以及散热介质，其接触绝缘树脂层的与接触第一散热突起的前表面的一侧相反的一侧上的表面。有源元件区域的至少一部分被包括在第一散热突起底表面下面的区域中，在有源元件区域内，第一散热突起没有被连接至外部端子，第一散热突起的导热率大于绝缘树脂层的导热率；并且绝缘树脂层从第一散热突起的前表面至散热介质的厚度小于绝缘树脂层从半导体元件的主表面至散热介质的厚度。
本发明的半导体装置制造方法包括：在配线板上形成第一导体配线和第二导体配线；以相同的厚度，在第一导体配线上形成多个配线突起电极并且在第二导体配线上形成多个第二散热突起；使用比配线突起电极的材料硬度更高硬度的材料，以相同的厚度，在形成于半导体元件的主表面上的多个元件电极中的每一个上形成元件突起电极并且在形成于半导体元件的主表面上的多个散热电极中的每一个上形成第一散热突起；布置配线板和半导体元件，使得配线突起电极和对应的元件突起电极彼此对置，并且第一散热突起和第二散热突起建立水平位置关系，并且，其中一个散热突起的顶部部分被相邻的其他散热突起的顶部部分环绕；并且通过在挤压配线突起电极的顶部部分的同时，连接元件突起电极和配线突起电极，使得第一散热突起的顶部部分和第二散热突起的顶部部分布置在相应的侧表面彼此对置的位置处，而将半导体元件倒装在配线板上。
本发明的效果
根据本发明，在被安装的半导体元件的有源元件区域内产生的热经由散热突起在水平方向上散逸，并且经由绝缘树脂层散逸至散热介质，由此，可以提高热从有源元件区域至散热介质的散逸速度。
附图说明
图1A是示出了作为本发明的第一实施例中的第一结构示例的半导体装置的主要部分的剖视图；
图1B是示出了作为第一实施例中的第二结构示例的半导体装置的主要部分的剖视图；
图1C是示出了作为第一实施例中的第三结构示例的半导体装置的主要部分的剖视图；
图1D是示出了作为第一实施例中的第四结构示例的半导体装置的主要部分的剖视图；
图2A是示出了作为本发明的第二实施例中的第一结构示例的半导体装置的剖视图；
图2B是示出了作为第二实施例中的第二结构示例的半导体装置的剖视图；
图3A是示出了作为第二实施例中的第三结构示例的半导体装置的剖视图；
图3B是示出了作为第二实施例中的第四结构示例的半导体装置的剖视图；
图4A是示出了作为本发明的第三实施例中的第一结构示例的半导体装置的剖视图；
图4B是该同一半导体装置的底视图；
图5A是示出了作为第三实施例中的第二结构示例的半导体装置的剖视图；
图5B是该同一半导体装置的底视图；
图6是示出了作为第三实施例中的第三结构示例的半导体装置的剖视图；
图7A是示出了作为第三实施例中的第四结构示例的半导体装置的剖视图；
图7B是该同一半导体装置的底视图；
图8A是示出了作为第三实施例中的第五结构示例的半导体装置的剖视图；
图8B是该同一半导体装置的底视图；
图9A是示出了作为第三实施例中的第六结构示例的半导体装置的剖视图；
图9B是该同一半导体装置的底视图；
图10A是示出了作为第三实施例中的第七结构示例的半导体装置的剖视图；
图10B是该同一半导体装置的底视图；
图11A是示出了作为第三实施例中的第八结构示例的半导体装置的剖视图；
图11B是该同一半导体装置的底视图；
图12A是示出了本发明的第四实施例中的半导体装置的制造方法中的步骤的剖视图；
图12B是示出了制造方法中的图12A所示步骤的下一步骤的剖视图；
图13是示出了传统示例的半导体装置的剖视图；
图14是示出了另一传统示例的半导体装置的剖视图。
具体实施方式
根据上述结构，本发明可以具有下述的方面。
在具有如上所述结构的半导体装置中，优选地，第一散热突起被形成为从有源元件区域内部上方延伸至其外面，并且在有源元件区域外面被连接至外部端子。
第一散热突起由与连接构件相同的材料制成。
另外，散热介质的导热率优选大于绝缘树脂层的导热率。
另外，散热介质是配线板，半导体元件被倒装在配线板上，外部端子被由形成于配线板上的导体配线的一部分形成，第一散热突起被形成为从有源元件区域内部上方延伸至其外部，并且在有源元件区域外面被连接至外部端子，而导体配线被形成为从与第一散热突起对置的区域经由半导体元件的端部部分延伸至半导体元件被倒装的区域。
另外，散热介质是配线板，半导体元件被倒装在配线板上，并且配线板包括：形成于配线板上表面上的多个第一导体配线；第二导体配线，其被形成于配线板上与形成第一散热突起的区域对置的位置处；以及形成于第二导体配线上的多个第二散热突起。第一导体配线的一部分用作外部端子，并且经由连接构件被连接至元件电极，每个第二散热突起的顶部部分被相邻的第一散热突起的顶部部分环绕，并且相应的侧表面彼此对置但彼此不接触，并且绝缘树脂被充填到第二散热突起和第一散热突起之间的缝隙中。
再另外，第一导体配线在经由连接构件连接至元件电极的一侧的端部部分朝向半导体元件的中心延伸，而形成第二导体配线。
再另外，散热介质是配线板，半导体元件被倒装在配线板上，并且配线板包括：形成于配线板上表面上的多个第一导体配线；第二导体配线，其被形成于配线板上与形成第一散热突起的区域对置的位置处；以及形成在第二导体配线上的多个第二散热突起。元件电极和第一导体配线被经由连接构件相连接，每个第二散热突起的顶部部分被相邻的第一散热突起的顶部部分环绕，并且相应的侧表面彼此对置并且彼此接触，并且绝缘树脂被充填到第二散热突起和第一散热突起之间的缝隙中。
下文中，将参照附图描述本发明的实施例。
(实施例1)
将参照图1A至1D描述本发明的第一实施例中的半导体装置的结构。本实施例示出了本发明的基本概念，其中用于散热的突起电极(下文中，被称作散热突起)被设置于半导体元件(芯片)内。
图1A是示出了作为本实施例中的第一结构示例的半导体装置的主要部分的剖视图。半导体元件1包括有源元件区域1a，并且多个元件电极2被形成于作为有源元件区域1a外围的半导体元件1的主表面(图中的上表面)上。另外，散热电极3被形成在至少包括有源元件区域1a的一部分的区域内。第一散热突起4被形成于散热电极3上。保护膜5被设置成覆盖没有形成元件电极2和散热电极3的半导体元件1的主表面的区域。
外部端子6和7被设置于半导体元件1的元件电极2附近。在图1A的左侧部分中示出的外部端子6被垂直于元件电极2布置并且经由由线材8制成的连接构件而被连接至元件电极2。在图1A的右侧部分中示出的外部端子7被在竖直方向上平行于元件电极2布置并且经由由突起电极9制成的连接构件而被连接至元件电极2。请注意，虽然两种类型的外部端子6和7被示出作为示例，但通常使用这些结构中的任一种。
绝缘树脂层10被设置成覆盖位于半导体元件1的主表面上的第一散热突起4和保护膜5。虽然在图1A中只示出了一部分，但散热介质11被设置成接触绝缘树脂层10的前表面，也就是，与接触第一散热突起4的前表面的一侧相反的一侧上的表面。散热介质11可以是诸如空气的气体或液体。
如上所述，有源元件区域1a的至少一部分被包括在第一散热突起4底表面下面的区域内并且被包括在有源元件区域1a内，第一散热突起4没有被连接至外部端子6和7。另外，第一散热突起4的导热率κ1大于绝缘树脂层10的导热率κ2(κ1＞κ2)。另外，绝缘树脂层10从第一散热突起4的前表面至散热介质11的厚度d1小于绝缘树脂层10从半导体元件1的主表面12至散热介质11的厚度d2(d1＜d2)。请注意，第一散热突起4的厚度t1优选大于散热电极3的厚度t2(t1＞t2)。
根据如上所述的结构，通过在半导体元件1的有源元件区域1a上设置第一散热突起4，在有源元件区域1a内产生的热通过第一散热突起4在水平方向上快速散逸，并且然后经由绝缘树脂层10散逸至散热介质11。因此，与没有设置第一散热突起4的传统结构相比，可以提高从有源元件区域1a产生的热的消散速度。
图1B是示出了作为本实施例中的第二结构示例的半导体装置的主要部分的剖视图。为避免重复解释，相同的参考标记被授予与第一结构示例中的半导体装置的那些相同的元件。在本结构示例中，第一散热突起13被形成为从有源元件区域1a的内部上方延伸至其外面，并且在有源元件区域1a外面被连接至外部端子7。
图1C是示出了作为本实施例中的第三结构示例的半导体装置的主要部分的剖视图。在本结构示例中，第一散热突起14被形成为包含与作为连接构件的突起电极9相同的材料。
图1D是示出了作为本实施例中的第四结构示例的半导体装置的主要部分的剖视图。在本结构示例中，没有使用上述示例中的气体或液体散热介质11，而是使用例如由金属制成的散热板15作为散热介质。散热板15的导热率κ3大于绝缘树脂层10的导热率κ2(κ3＞κ2)。因此，可以提高散热效率。
(实施例2)
将参照图2A、2B、3A和3B描述本发明的第二实施例中的半导体装置的结构。在本实施例中，作为第一实施例中的半导体装置的更详细结构，示出了其中半导体元件被以面朝上(face-up)的方式安装在配线板或引线框上的第一至第四结构示例。
图2A是示出了作为本实施例中的第一结构示例的半导体装置的剖视图。半导体元件1的结构与在图1A及类似图中示出的第一实施例中的半导体元件1的结构相同，并且因此为避免重复解释将相同的参考标记授予相同的元件。另外，关于其它元件，相同的参考标记被授予相同的元件。
多个第一导体配线17被设置于配线板16上，并且外部端子被由第一导体配线17的一部分形成。半导体元件1被安装在配线板16上，并且通过粘合剂18固定，并且一个或多个元件电极2被经由由线材8制成的连接构件连接至第一导体配线17(外部端子)。
绝缘树脂层10被设置于配线板16上，以覆盖半导体元件1、线材8和第一导体配线17的连接部分。另外，接触绝缘树脂层10的前表面，也就是，与连接第一散热突起4的前表面的一侧相反的一侧上的表面，的区域用作散热介质11。
至于配线板16，例如，可以使用厚度约40μm的聚酰亚胺膜。至于形成第一导体配线17的材料，可以使用厚度约8μm的铜箔(Cu foil)。另外，元件电极2和散热电极3可以由厚度约0.5μm的Al形成。第一散热突起4可以由厚度约3μm的无电镀Ni形成，无电镀Ni的表面被厚度约0.05μm的无电镀Au覆盖。另外，至于绝缘树脂层10，例如，可以使用一般的环氧基树脂。
根据本实施例的半导体装置的结构，类似于第一实施例的情况，通过能够使热在水平方向上散逸的第一散热突起4的功能，可以获得提高从有源元件区域1a产生的热的散逸速度的效果。
本实施例中的半导体装置可以采用修改示例的结构，例如如图2B、3A和3B中所示。所有这些示例具有其中半导体元件1被以面朝上的方式安装的方面。
图2B是示出了作为本实施例中的第二结构示例的半导体装置的剖视图。本半导体装置的结构与图2A所示的结构基本相同，不同点在于散热板19被设置于绝缘树脂层10内，而不是图2A所示的散热介质11。至于散热板19，例如，可以使用金属板。
图3A是示出了作为本实施例中的第三结构示例的半导体装置的剖视图。半导体装置使用引线框20代替在图2A中所示的第一结构示例中的配线板16。半导体元件1被以面朝上的方式安装在引线框20的芯片焊垫20a上，并且元件电极2被经由线材8连接至作为外部端子的引线20b上。绝缘树脂层21密封包括芯片焊垫20a、半导体元件1以及引线20b的一部分的区域。请注意，图中省略了散热介质的示意。
图3B是示出了作为本实施例中的第四结构示例的半导体装置的剖视图。本半导体装置的结构与图3A所示的结构基本相同，不同点在于散热板19被设置于绝缘树脂层21中，作为散热介质。
(实施例3)
将参照图4A至11B描述本发明的第三实施例中的半导体装置的结构。在本实施例中，作为第一实施例中的半导体装置的更详细结构，示出了其中半导体元件1被以面朝下的方式安装到配线板16上的第一至第八结构示例。半导体元件1和配线板16的结构与上述实施例的那些大体相同，并且因此为避免重复解释将相同的参考标记授予相同的元件。
图4A是示出了作为本实施例中的第一结构示例的半导体装置的剖视图。图4B是图4A的底视图(从箭头A表示的方向看过去)，并且通过看穿一部分构件而示意。请注意，图4A示出了图4B中线B-B处的剖面。
散热电极3被形成在至少包括半导体元件1的一部分的区域内。比散热电极3厚的第一散热突起4被形成在散热电极3上。保护膜5被设置成覆盖没有形成元件电极2和散热电极3的半导体元件1的主表面的区域。
第一导体配线17被形成在配线板16上。作为连接构件的突起电极9被形成在第一导体配线17上。经由元件电极2和作为形成于元件电极2上的连接构件的突起电极22，半导体元件1被倒装到配线板16上。绝缘树脂层23被设置用以充填到半导体元件1和配线板16之间的缝隙中。
根据第一结构示例，在有源元件区域1a中产生的热通过第一散热突起4在水平方向上散逸，并且然后经由绝缘树脂层23散逸至配线板16。因此，与没有设置第一散热突起4的结构相比，可以提高热从有源元件区域1a至配线板16的散逸速度。配线板16用作第一实施例中的散热介质11。
图5A是示出了作为本实施例中的第二结构示例的半导体装置的剖视图。图5B是图5A的底视图，并且通过看穿一部分构件而示意。本半导体装置的结构与第一结构示例的半导体装置的结构大体相同，不同点在于除第一导体配线17之外第二导体配线24被设置于配线板16上。
第二导体配线24被形成在与第一散热突起4对置的配线板16的一部分上。虽然第一导体配线17和元件电极2被经由作为连接构件的突起电极9和22彼此相连接，但第二导体配线24和第一散热突起4没有彼此接触。
作为示例，厚度约40μm的聚酰亚胺膜被用作配线板16。第一导体配线17和第二导体配线24被由厚度约8μm的CU形成。另外，突起电极9被由厚度约6μm的电镀Cu形成，电镀Cu的表面被厚度约0.5μm的电镀Au覆盖。
另外，元件电极2和散热电极3被由厚度约0.5μm的Al形成。突起电极22和第一散热突起4被由厚度约3μm的无电镀Ni形成，无电镀Ni的表面被厚度约0.05μm的无电镀Au覆盖。另外，至于绝缘树脂层23，使用一般的环氧基树脂。
根据第二结构示例，热被从第一散热突起4经由绝缘树脂层23散逸至第二导体配线24，然后散逸至配线板16。因此，借助于第二导体配线24，可以进一步提高热从有源元件区域1a至配线板16的散逸速度。第二导体配线24还用作第一实施例中的散热介质11。
图6是示出了作为本实施例中的第三结构示例的半导体装置的剖视图。本半导体装置的结构与第二结构示例的半导体装置的结构大体相同，不同点在于对应于第二导体配线24的第二导体配线25被分隔成若干个部分，并且背面导体配线26被形成在配线板16的背面上。另外，第二导体配线25和背面导体配线26被通过过孔27连接。
根据第三结构示例，热被从第一散热突起4经由绝缘树脂层23散逸至第二导体配线25，进一步通过过孔27传递至背面导体配线26，然后被散逸。因此，借助于过孔27和背面导体配线26，可以进一步提高已经从有源元件区域1a传至第一散热突起4的热的散逸速度。
图7A是示出了作为本实施例中的第四结构示例的半导体装置的剖视图。图7B是图7A的底视图，并且通过看穿一部分构件而示意。在图7A和7B中，为避免重复解释，将相同的参考标记授予与图5A和5B中示出的第二结构示例的那些相同的元件。
第四结构示例的特征是第二散热突起28被形成于第二导体配线24上，并且被连接至第一散热突起4。第二导体配线24不与有源元件区域1a上的第一散热突起4接触，并且经由形成于有源元件区域1a外面的位置的第二散热突起28被连接至第一散热突起4。
根据本结构示例，在有源元件区域1a中产生的热经由第一散热突起4在水平方向上散逸，并且进一步经由第二散热突起28散逸至第二导体配线24。因此，可以进一步提高热从有源元件区域1a至配线板16的散逸速度。而且，因为第二散热突起28被形成在有源元件区域1a外面的位置，所以可以减少下述情形：在半导体元件1的倒装安装过程中和倒装安装后，应力被经由第二散热突起28应用在有源元件区域1a上，由此，可以抑制有源元件区域1a的电特性中的变化。
图8A是示出了作为本实施例中的第五结构示例的半导体装置的剖视图。图8B是图8A的底视图，并且通过看穿一部分构件而示意。请注意，图8A示出了图8B中线C-C处的剖面。在图8A和8B中，为避免重复解释将相同的参考标记授予与图5A和5B中示出的第二结构示例的那些相同的元件。
本结构示例的半导体装置的特征是散热电极29被设置成从有源元件区域1a上方延伸至有源元件区域1a的外面，以到达半导体元件1的端部部分，并且在其上面形成第一散热突起13。
另外，第二导体配线30被形成为从与第一散热突起13对置的位置经由半导体元件1的端部部分延伸至没有倒装半导体元件1的区域。第二导体配线30和第一散热突起13没有在有源元件区域1a上彼此接触，并且经由形成在有源元件区域1a外面的位置的第二散热突起31相连接。
根据本结构示例，因为第二导体配线30从与第一散热突起13对置的位置经由半导体元件1的端部部分延伸至没有倒装半导体元件1的区域，所以可以进一步改善散热效果。
图9A是示出了作为本实施例中的第六结构示例的半导体装置的剖视图。图9B是图8A的底视图，并且通过看穿一部分构件而示意。在图9A和9B中，为避免重复解释将相同的参考标记授予与图7A和7B中示出的第四结构示例的那些相同的元件。为简单起见，在图9B中省略了有源元件区域1a的示意。
本结构示例的特征是多个散热电极32被形成在包括有源元件区域1a的区域内。第一散热突起33被形成在该多个散热电极32中的每一个上。
形成于与第一散热突起33对置的配线板16的部分上的第二导体配线24的结构与第二结构示例中的相同。比突起电极9厚的第二散热突起34被设置于第二导体配线24上。每个第二散热突起34的顶部部分被相邻的第一散热突起33的顶部部分环绕，并且相应的侧表面彼此对置但彼此不接触。绝缘树脂层23被充填到第一散热突起33和第二散热突起34之间的缝隙中。
根据本结构示例，因为第二散热突起34形成得比突起电极9高，所以每个第二散热突起34的顶部部分被夹在相邻的第一散热突起33的顶部部分之间。因此，与第四结构示例的情况相比，第二散热突起34和第一散热突起33彼此对置的面积增大了，由此可以进一步改善散热效果。
图10A是示出了作为本实施例中的第七结构示例的半导体装置的剖视图。图10B是图10A的底视图，并且通过看穿一部分构件而示意。请注意，图10A示出了图10B中线D-D处的剖面。在图10A和10B中，为避免重复解释将相同的参考标记授予与图9A和9B中示出的第六结构示例的那些相同的元件。
在本结构示例中，类似于图9A和9B中示出的第六结构示例，多个散热电极32被形成在包括有源元件区域1a的区域内，并且第一散热突起33被形成在每个散热电极32上。
与第六结构示例的特征不同的本结构示例的特征是第一导体配线17朝向半导体元件1的中心延伸，以便其末端部分形成散热配线部分17a，并且比突起电极9厚的第二散热突起35被形成在散热配线部分17a上。每个第二散热突起35的顶部部分被相邻的第一散热突起33的顶部部分环绕，并且相应的侧表面彼此对置但彼此不接触。绝缘树脂层23被充填到第二散热突起35和第一散热突起33之间的缝隙中。
根据本结构示例，与第六结构示例相比，配线板16与绝缘树脂层23直接接触的表面积增加了，并且散热配线部分17a和第二散热突起35与绝缘树脂层23接触的表面积增加了。因此，可以改善绝缘树脂层23和配线板16之间的粘接。
图11A是示出了作为本实施例中的第八结构示例的半导体装置的剖视图。图11B是图11A的底视图，并且通过看穿一部分构件而示意。本结构示例的半导体装置具有第六结构示例的修改特征。因此，在图11A和11B中，为避免重复解释将相同的参考标记授予与图9A和9B中示出的第六结构示例的那些相同的元件。
在本结构示例中，类似于第六结构示例，比突起电极9厚的第二散热突起36被形成于第二导体配线24上，第二导体配线24被形成在与第一散热突起33对置的配线板16的部分上。另外，每个第二散热突起36的顶部部分被相邻的第一散热突起33的顶部部分环绕。
与第六结构示例的特征不同的本结构示例的特征是第二散热突起36和第一散热突起33的侧表面彼此对置并且彼此接触。绝缘树脂层23被充填到第二散热突起36和第一散热突起33彼此不接触的空间内。
根据本结构示例，因为第二散热突起36和第一散热突起33彼此接触，所以与第六结构示例的情况相比，可以进一步改善散热效果。
另外，因为第二散热突起36和第一散热突起33之间的接触部分不是它们的顶部部分，而是它们的侧表面，所以可以获得减小有源元件区域1a的电特性中的变化的优势。换句话说，与图14中示出的传统示例2的结构相比，在将半导体元件1倒装安装到配线板16上的时候的载荷或者安装后由于半导体元件1和配线板16之间的热膨胀系数差导致的作用在有源元件区域1a上的应力不直接在竖直方向上作用。因此，载荷或应力被散失在竖直和水平方向上，因此减小了有源元件区域1a的电特性中的变化。
(实施例4)
将参照图12A和12B描述根据本发明的第四实施例的半导体装置的制造方法。本制造方法是用于制造如图9A和9B中示出的第三实施例中的第六结构示例的半导体装置的方法。因此，为避免重复解释将相同的参考标记授予与图9A和9B中示出的那些相同的元件。
首先，如图12A中所示，制备第一导体配线17、第二导体配线24、突起电极9和第二散热突起34形成于其上的配线板16，以及元件电极2、突起电极22、散热电极32、第一散热突起33和保护膜5形成于其上的半导体元件1。之后，将未固化的绝缘树脂层23a放置在第一导体配线17上，并且将半导体元件1放置成与其对置。
分别使用电镀Cu/Au(例如，大约Cu：8μm，Au：0.5μm)在第一导体配线17和第二导体配线24上形成相同高度的突起电极9和第二散热突起34。分别使用无电镀Ni/Au在元件电极2和散热电极32上同时形成突起电极22和第一散热突起33。因此，突起电极22和第一散热突起33具有相同的厚度(例如，Ni：3μm，Au：0.05μm)。
下面，如图12B中所示，将半导体元件1倒装在配线板16上，并通过超声焊接连接突起电极9和突起电极22。同时，因为由Cu制成的突起电极9的硬度低于由Ni制成的突起电极22的硬度，所以突起电极9的顶部部分被挤压并连接至突起电极22。这时，突起电极9的顶部部分的挤压量被控制在约2μm。
期间，定位第一散热突起33和第二散热突起34，从而建立水平位置关系，其中，每个第二散热突起34的顶部部分被相邻的第一散热突起33的顶部部分环绕。因此，可以在突起电极9和第二散热突起34之间提供高度差，这对应于2μm的挤压量。另外，获得了其中第一散热突起33和第二散热突起34的侧表面彼此对置但彼此不接触的结构。
之后，通过固化未固化的绝缘树脂层23a，完成半导体装置。
根据如上所述的半导体装置的制造方法，第二散热突起34被形成得比突起电极9厚；除此之外，第一散热突起33和第二散热突起34被定位成建立了如下位置关系：其中每个第二散热突起34的顶部部分被相邻的第一散热突起33的顶部部分环绕，并且相应的侧表面彼此对置。因此，与第一实施例的情况相比，第二散热突起34和第一散热突起33彼此对置的面积被增大，因此，实现了能够通过单一超声连接步骤而改善散热效果的结构。
工业实用性
本发明是有用的，因为半导体装置中的散热技术能够提高热从有源元件区域至半导体元件的散热介质的散逸速度。
附图标记列表
1半导体元件
1a有源元件区域
2元件电极
3、29、32散热电极
4、13、14、33第一散热突起
5保护膜
6、7外部端子
8线材
9、22突起电极
10、21、23绝缘树脂层
11散热介质
12半导体元件的主表面
16配线板
17第一导体配线
17a散热配线部分
18粘合剂
15、19散热板
20引线框
20a芯片焊垫
20b引线
23a未固化的绝缘树脂层
24、25、30第二导体配线
26背面导体配线
27过孔
28、31、34、35、36第二散热突起
41配线板
42导体配线
43散热导体配线
44散热突起
45半导体元件
46元件电极
47连接突起电极
48有源元件区域
49接地配线
50保护膜
51导热树脂

Claims (13)

1.一种半导体装置，包括：
半导体元件，其具有有源元件区域；
多个元件电极，它们被形成于所述半导体元件的主表面上；
外部端子，其被经由连接构件连接至一个或多个所述元件电极上；
一个或多个第一散热突起，它们被形成在所述半导体元件的主表面上；
绝缘树脂层，其覆盖所述半导体元件的主表面和所述第一散热突起；以及
散热介质，其接触所述绝缘树脂层的与接触第一散热突起前表面的一侧相反的一侧上的表面；
其中，所述有源元件区域的至少一部分被包括在所述第一散热突起底表面下面的区域中；
在所述有源元件区域内，所述第一散热突起没有被连接至所述外部端子；
所述第一散热突起的导热率大于所述绝缘树脂层的导热率；并且
所述绝缘树脂层从所述第一散热突起的前表面至所述散热介质的厚度小于所述绝缘树脂层从所述半导体元件的主表面至所述散热介质的厚度，
并且其中，所述散热介质是配线板；
所述半导体元件被倒装在所述配线板上；
所述外部端子被由形成于所述配线板上的导体配线的一部分形成；
所述第一散热突起被形成为从所述有源元件区域内部上方延伸至其外面，并且在所述有源元件区域外面被连接至所述外部端子；并且
所述导体配线被形成为从与所述第一散热突起对置的区域经由所述半导体元件的端部部分延伸至没有倒装半导体元件的区域。
2.根据权利要求1所述的半导体装置，其特征在于，所述第一散热突起由与所述连接构件相同的材料制成。
3.根据权利要求1所述的半导体装置，其特征在于，所述散热介质的导热率大于所述绝缘树脂层的导热率。
4.一种半导体装置，包括：
半导体元件，其具有有源元件区域；
多个元件电极，它们被形成于所述半导体元件的主表面上；
外部端子，其被经由连接构件连接至一个或多个所述元件电极上；
一个或多个第一散热突起，它们被形成在所述半导体元件的主表面上；
绝缘树脂层，其覆盖所述半导体元件的主表面和所述第一散热突起；以及
散热介质，其接触所述绝缘树脂层的与接触第一散热突起前表面的一侧相反的一侧上的表面；
其中，所述有源元件区域的至少一部分被包括在所述第一散热突起底表面下面的区域中；
在所述有源元件区域内，所述第一散热突起没有被连接至所述外部端子；
所述第一散热突起的导热率大于所述绝缘树脂层的导热率；并且
所述绝缘树脂层从所述第一散热突起的前表面至所述散热介质的厚度小于所述绝缘树脂层从所述半导体元件的主表面至所述散热介质的厚度，
并且其中，所述散热介质是配线板；
所述半导体元件被倒装在所述配线板上；
所述配线板包括：
多个第一导体配线，它们被形成在所述配线板的上表面上；
第二导体配线，其被形成在所述配线板上与形成所述第一散热突起的区域对置的位置；以及
多个第二散热突起，它们被形成在所述第二导体配线上；
所述第一导体配线的一部分用作所述外部端子，并且经由所述连接构件被连接至所述元件电极；
每个所述第二散热突起的顶部部分被相邻的第一散热突起的顶部部分环绕，并且相应的侧表面彼此对置但彼此不接触；并且
绝缘树脂被充填到所述第二散热突起和所述第一散热突起之间的缝隙中。
5.根据权利要求4所述的半导体装置，其特征在于，所述第一散热突起被形成为从所述有源元件区域内部上方延伸至其外面，并且在所述有源元件区域外面被连接至所述外部端子。
6.根据权利要求4所述的半导体装置，其特征在于，所述第一散热突起由与所述连接构件相同的材料制成。
7.根据权利要求4所述的半导体装置，其特征在于，所述散热介质的导热率大于所述绝缘树脂层的导热率。
8.根据权利要求4所述的半导体装置，其特征在于，所述第一导体配线在经由连接构件连接至元件电极的一侧的端部部分朝向半导体元件的中心延伸，从而形成所述第二导体配线。
9.一种半导体装置，包括：
半导体元件，其具有有源元件区域；
多个元件电极，它们被形成于所述半导体元件的主表面上；
外部端子，其被经由连接构件连接至一个或多个所述元件电极上；
一个或多个第一散热突起，它们被形成在所述半导体元件的主表面上；
绝缘树脂层，其覆盖所述半导体元件的主表面和所述第一散热突起；以及
散热介质，其接触所述绝缘树脂层的与接触第一散热突起前表面的一侧相反的一侧上的表面；
其中，所述有源元件区域的至少一部分被包括在所述第一散热突起底表面下面的区域中；
在所述有源元件区域内，所述第一散热突起没有被连接至所述外部端子；
所述第一散热突起的导热率大于所述绝缘树脂层的导热率；并且
所述绝缘树脂层从所述第一散热突起的前表面至所述散热介质的厚度小于所述绝缘树脂层从所述半导体元件的主表面至所述散热介质的厚度，
并且其中，所述散热介质是配线板；
所述半导体元件被倒装在所述配线板上；
所述配线板包括：
多个第一导体配线，它们被形成在所述配线板的上表面上；
第二导体配线，其被形成在所述配线板上与形成所述第一散热突起的区域对置的位置；以及
多个第二散热突起，它们被形成在所述第二导体配线上；
所述元件电极和所述第一导体配线被经由所述连接构件相连接；
每个所述第二散热突起的顶部部分被相邻的第一散热突起的顶部部分环绕，并且相应的侧表面彼此对置并且彼此接触；并且
绝缘树脂被充填到所述第二散热突起和所述第一散热突起之间的缝隙中。
10.根据权利要求9所述的半导体装置，其特征在于，所述第一散热突起被形成为从所述有源元件区域内部上方延伸至其外面，并且在所述有源元件区域外面被连接至所述外部端子。
11.根据权利要求9所述的半导体装置，其特征在于，所述第一散热突起由与所述连接构件相同的材料制成。
12.根据权利要求9所述的半导体装置，其特征在于，所述散热介质的导热率大于所述绝缘树脂层的导热率。
13.一种半导体装置制造方法，包括：
在配线板上形成第一导体配线和第二导体配线；
以相同的厚度，在所述第一导体配线上形成多个配线突起电极并且在所述第二导体配线上形成多个第二散热突起；
使用比所述配线突起电极的材料硬度更高硬度的材料，以相同的厚度，在形成于半导体元件的主表面上的多个元件电极中的每一个上形成元件突起电极并且在形成于所述半导体元件的主表面上的多个散热电极中的每一个上形成第一散热突起；
布置所述配线板和所述半导体元件，使得所述配线突起电极和对应的元件突起电极彼此对置，并且所述第一散热突起和所述第二散热突起建立水平位置关系，其中，其中一个散热突起的顶部部分被相邻的其它散热突起的顶部部分环绕；并且
通过在挤压所述配线突起电极的顶部部分的同时，连接所述元件突起电极和所述配线突起电极，使得所述第一散热突起的顶部部分和所述第二散热突起的顶部部分布置在相应的侧表面彼此对置的位置处，而将半导体元件倒装在配线板上。
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