CN102160163A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN102160163A
CN102160163A CN2009801370978A CN200980137097A CN102160163A CN 102160163 A CN102160163 A CN 102160163A CN 2009801370978 A CN2009801370978 A CN 2009801370978A CN 200980137097 A CN200980137097 A CN 200980137097A CN 102160163 A CN102160163 A CN 102160163A
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China
Prior art keywords
semiconductor device
photosensitive adhesive
film
moisture
semiconductor
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CN2009801370978A
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English (en)
Chinese (zh)
Inventor
川守崇司
满仓一行
增子崇
加藤木茂树
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Showa Denko Materials Co ltd
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Hitachi Chemical Co Ltd
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Priority claimed from JP2008242765A external-priority patent/JP5458538B2/ja
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN102160163A publication Critical patent/CN102160163A/zh
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CN2009801370978A 2008-09-22 2009-06-25 半导体装置及其制造方法 Pending CN102160163A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104737074A (zh) * 2012-10-26 2015-06-24 东京应化工业株式会社 正型感光性树脂组合物、聚酰亚胺树脂图案的形成方法、和图案化后的聚酰亚胺树脂膜
CN106256018A (zh) * 2014-04-29 2016-12-21 美光科技公司 具有支撑构件的堆叠式半导体裸片组合件及相关的系统及方法

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
KR20120080385A (ko) * 2011-01-07 2012-07-17 삼성전자주식회사 패턴 형성용 접착 필름 조성물, 이를 포함하는 접착 필름 및 이를 이용한 반도체 패키징 방법
WO2015190210A1 (fr) * 2014-06-12 2015-12-17 太陽インキ製造株式会社 Composition de résine durcissable, film sec, produit durci et carte imprimée
JP6961342B2 (ja) * 2016-12-27 2021-11-05 サムスン エレクトロニクス カンパニー リミテッド ポリイミド樹脂およびポジ型感光性樹脂組成物
KR102522749B1 (ko) * 2017-11-06 2023-04-17 아사히 가세이 가부시키가이샤 감광성 수지 적층체 및 레지스트 패턴의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152355A (ja) * 1991-11-25 1993-06-18 Nitto Denko Corp 半導体装置
US20010009780A1 (en) * 1995-07-06 2001-07-26 Shinji Takeda Semiconductor device and process for fabrication thereof
JP2008088403A (ja) * 2006-09-05 2008-04-17 Hitachi Chem Co Ltd 感光性接着剤組成物、及びそれを用いた接着フィルム、接着シート、接着剤パターン、並びに半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW310481B (fr) * 1995-07-06 1997-07-11 Hitachi Chemical Co Ltd
JP5458538B2 (ja) * 2007-12-12 2014-04-02 日立化成株式会社 半導体装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152355A (ja) * 1991-11-25 1993-06-18 Nitto Denko Corp 半導体装置
US20010009780A1 (en) * 1995-07-06 2001-07-26 Shinji Takeda Semiconductor device and process for fabrication thereof
JP2008088403A (ja) * 2006-09-05 2008-04-17 Hitachi Chem Co Ltd 感光性接着剤組成物、及びそれを用いた接着フィルム、接着シート、接着剤パターン、並びに半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104737074A (zh) * 2012-10-26 2015-06-24 东京应化工业株式会社 正型感光性树脂组合物、聚酰亚胺树脂图案的形成方法、和图案化后的聚酰亚胺树脂膜
CN104737074B (zh) * 2012-10-26 2019-12-10 东京应化工业株式会社 正型感光性树脂组合物、和图案形成方法
CN106256018A (zh) * 2014-04-29 2016-12-21 美光科技公司 具有支撑构件的堆叠式半导体裸片组合件及相关的系统及方法
US10504881B2 (en) 2014-04-29 2019-12-10 Micron Technology, Inc. Stacked semiconductor die assemblies with support members and associated systems and methods
US11101262B2 (en) 2014-04-29 2021-08-24 Micron Technology, Inc. Stacked semiconductor die assemblies with support members and associated systems and methods
US11855065B2 (en) 2014-04-29 2023-12-26 Micron Technology, Inc. Stacked semiconductor die assemblies with support members and associated systems and methods

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