TW201013854A - Semiconductor device and method for manufacturing the same - Google Patents
Semiconductor device and method for manufacturing the same Download PDFInfo
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- TW201013854A TW201013854A TW098121638A TW98121638A TW201013854A TW 201013854 A TW201013854 A TW 201013854A TW 098121638 A TW098121638 A TW 098121638A TW 98121638 A TW98121638 A TW 98121638A TW 201013854 A TW201013854 A TW 201013854A
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- semiconductor device
- film
- photosensitive adhesive
- resin
- adhesive
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- Materials For Photolithography (AREA)
Description
201013854 六、發明說明: 【發明所屬之技術領域】 本發明係關於半導體裝置及其製造方法。 【先前技術】 近年來,隨著電子零件之高性能化、高功能化,具有 種種形態之半導體裝置被已被提案。於如此半導體裝置上 φ ,欲將半導體元件與半導體元件搭載用支持基材(被接著 體)進行接著固定,可使用具有低應力性、低溫接著性、 耐濕信頼性及耐焊接迴流性等以外,以半導體裝置功能、 形態及組裝製程之簡略化作爲目的之可圖型化感光性的薄 膜狀感光性接著劑。 所謂感光性爲照射光的部分起化學變化,其爲於驗水 溶液或有機溶劑中爲不溶化或可溶化之功能。使用具有該 感光性之薄膜狀感光性接著劑時,介著光罩進行曝光,藉 由顯像液進行處理形成圖型,介此將半導體元件與半導體 元件搭載用支持基材經熱壓著而可得到形成高精細接著劑 圖型之半導體裝置(例如,參照專利文獻1)。 [先行技術文獻] [專利文獻] [專利文獻1]國際公開第2007/004569號說明書 【發明內容】 然而,使用專利文獻1等所記載之薄膜狀感光性接著 201013854 劑,製造半導體裝置時,產生熱壓著不良等現象,所得之 半導體裝置有著耐熱性降低之問題。 其中,經本發明者們的詳細檢討結果,得知以如下述 機制會得到熱壓著不良。 即,上述薄膜狀感光性接著劑被設計成於鹸性水溶液 或有機溶劑爲可溶,吸濕率或吸水率比較高,保管中或半 導體裝置之組裝步驟中容易吸濕。該吸濕之水分於半導體 元件與半導體元件搭載用支持基材之熱壓著時,會因氣化 @ •膨張而引起發泡,藉此原因產生熱壓著不良等現象。 又,亦得知藉由上述發泡所產生的接著劑中之結著爲 原因下,會導致半導體裝置之耐熱性降低的顧慮。 有鑑於上述事情,本發明以提供一種耐熱性優良的半 導體裝置、以及可製造如此半導體裝置,且不容易產生熱 壓著不良等不適當半導體裝置之製造方法爲目的。 本發明爲提供一種半導體元件與被接著體介著經圖型 化的薄膜狀感光性接著劑,經熱壓著所成之半導體裝置, @ 其爲經圖型化之薄膜狀感光性接著劑的熱壓著前之水分量 爲1.0重量%以下之半導體裝置。該半導體裝置具有優良 的耐熱性。 藉由本發明之半導體裝置,得到如此效果之理由雖未 完全解明,但本發明者們推測如下。 即,欲由半導體裝置製造電子零件時,一般必須經過 使接著劑硬化的硬化步驟及焊接迴流步驟,但這些步驟中 ,必須經過高溫處理。本發明的半導體裝置中,藉由將水 -6- 201013854 分量設定爲所定値以下時,可防止水分進一步加溫至高溫 時所產生的氣化、膨張等而引起的接著劑層之剝離,故其 耐熱性優良。 上述被接著體係以半導體元件或保護玻璃爲佳。 上述薄膜狀感光性接著劑至少含有(A)熱塑性樹脂 及(B)熱硬化性樹脂爲佳,進一步含有(c)放射線聚合 性化合物及(D)光啓始劑者爲佳。 • 上述(A)熱塑性樹脂係以鹼可溶性樹脂爲佳。由該 鹼可溶性樹脂具有優良顯像性與耐熱性之觀點來看,分子 中具有羧基及/或羥基之聚醯亞胺樹脂爲佳。 上述(B)熱硬化性樹脂由高溫下具有優良接著力之 觀點來看,以環氧樹脂爲佳。 上述經圖型化之薄膜狀感光性接著劑爲經過將由薄膜 狀感光性接著劑所成之接著劑層形成於被接著體(較佳爲 半導體晶圓)上的接著劑層形成步驟、將該接著劑層以所 • 定圖型進行曝光之曝光步驟、將曝光後之接著劑層藉由鹼 性水溶液進行顯像之顯像步驟、及將顯像後之接著劑層的 水分量進行調整之水分量調整步驟而形成爲佳。 又本發明爲提供一種具備將設置於半導體元件的電路 面上之薄膜狀感光性接著劑藉由曝光及顯像而圖型化之圖 型化步驟、調整經圖型化之前述感光性接著劑的水分量之 水分量調整步驟、藉由熱壓著將被接著體直接接著於經圖 型化之前述感光性接著劑之熱壓著步驟的半導體裝置之製 造方法,其中水分量調整步驟中’進行水分量調整處理, 201013854 使得於PET基材上形成圖型之薄膜狀感光性接著劑的形成 圖型後之水分量在1.0重量%以下的半導體裝置之製造方 法、及藉由該製造方法所製造之半導體裝置。 上述被接著體係以半導體元件或保護玻璃爲佳。 上述水分量調整處理以加熱處理者爲佳。加熱處理, 例如可於80〜200 °C、5秒〜30分鐘之條件下進行。 上述薄膜狀感光性接著劑至少含有(A)熱塑性樹脂 及(B)熱硬化性樹脂爲佳,以含有(C )放射線聚合性化 ⑩ 合物及(D )光啓始劑爲更佳。 上述(A )熱塑性樹脂係以鹼可溶性樹脂爲佳。由該 鹼可溶性樹脂之顯像性與耐熱性爲特優的觀點來看,分子 中具有羧基及/或羥基之聚醯亞胺樹脂爲佳。 上述(B)熱硬化性樹脂由高溫中具有優良接著力之 觀點來看,以環氧樹脂爲佳。 所謂本發明爲提供一種具有優良耐熱性之半導體裝置 、以及可製造此半導體裝置,且難產生熱壓著不良等不佳 φ 狀況的半導體裝置之製造方法。 以下對於實施本發明的最良形態作詳細說明。但’本 發明並未限定於以下。 本發明的半導體裝置之特徵爲,半導體元件與被接著 體介著經圖型化之薄膜狀感光性接著劑使其熱壓著所成之 半導體裝置,經圖型化之薄膜狀感光性接著劑的熱壓著前 之水分量爲1.0重量%以下。 又,本發明的半導體裝置之製造方法爲’具備將設置 -8- 201013854 於半導體元件的電路面上之薄膜狀感光性接著劑藉由曝光 及顯像進行圖型化之圖型化步驟、與調整經圖型化之前述 感光性接著劑的水分量之水分量調整步驟、與將被接著體 藉由熱壓著直接接著於經圖型化之前述感光性接著劑的熱 壓著步驟之半導體裝置的製造方法,於前述水分量調整步 驟,進行水分量調整處理,使得於PET基材上形成圖型之 薄膜狀感光性接著劑之形成圖型後之水分量在1.0重量% • 以下。 上述水分調整處理爲,使於PET基材上形成圖型之薄 膜狀感光性接著劑的圖型形成後之水分量爲0.7重量%以 下的處理爲佳,處理爲〇·5重量%以下者爲較佳。 未進行上述水分量調整處理時,於薄膜狀感光性接著 劑殘留的水分於半導體元件與被接著體之熱壓著時,成爲 因水分氣化·膨張引起發泡之原因,經壓著之半導體元件 或保護玻璃之剝離等恐怕對半導體裝置之製造上產生障礙 Ο 。又,所殘存之水分於硬化步驟*焊接迴流步驟上,若使 其高溫時,會成爲因氣化·膨張引起接著劑與被接著體之 剝離的原因。 又,因上述發泡所引起的接著劑中之結著爲原因時, 會導致半導體裝置之耐熱性降低的可能性高。 且,經圖型化之薄膜狀感光性接著劑的水分量,例如 可使用平沼產業製水分測定裝置「AQV2100CT」而測定》 本發明中之水分量如以下定義。 將於PET基材上所形成之厚度50μηι的薄膜狀感光性 -9- 201013854 接著劑上,進一步貼合作爲覆蓋薄膜之透明PET薄膜的接 著薄片,切出150mmxl50mm之尺寸。於所切出之接著薄 片上載持光罩,使用高精度平行曝光機(OAK製作所製) ,以曝光量:J/cm2之條件下,進行曝光(照射紫外 線),並於80 °C下進行30秒加熱。其後,剝開片側PET 薄膜,使用 Yako製噴霧顯像機進行顯像(顯像液:四甲 基銨鹵化物(TMAH ) 2.38°/。,27°C噴霧壓〇. 1 8MPa、水洗 :純水23°C及噴霧壓〇.〇2MPa)。如上述於PET基材形成 感光性接著劑圖型,其後,附著於薄膜之TMAH進行6分 鐘之純水洗淨。其後,室溫下放置30分鐘,剝開PET基 材,使用平沼產業製水分測定裝置「AQV2100CT」,測定 進行圖型化之薄膜狀感光性接著劑的水分量。本發明中之 水分量爲此時所示水分量。 且,本發明中之水分量調整處理表示進行水分量調整 至此時的水分量爲1.0重量%以下。該水分量調整處理之 條件可依薄膜種類而作適宜調整。例如於薄膜狀感光性接 著劑中含有氟原子時,經吸濕之水分量較少,又與經吸濕 之水分的親和性較低,故此時的水分量調整處理可爲去除 水分的轉動乾燥等。又,此時可依該薄膜之種類調整適宜 條件爲佳。且,作爲水分量調整處理進行加熱處理時,可 於80〜20CTC下進行5秒〜30分鐘爲佳,於100°C〜200。(: 進行30秒〜20分鐘爲較佳,於120°C〜200 °C進行1分鐘 〜10分鐘爲特佳。 作爲水分量調整處理進行加熱處理時,未達80°C且未 201013854 達5秒時,形成於PET基材上之形成圖型之薄膜狀感光性 接著劑的水分量有成爲1 .〇重量%以上之傾向,又加熱條 件若超過200 °C且超過30分鐘時,會進行經圖型化之薄膜 狀感光性接著劑的熱硬化,有著熱壓著時損害到熱流動性 之傾向。 進行上述加熱處理時,例如將於被接著體上所形成之 經圖型化之薄膜狀感光性接著劑放置於聚氟化伸乙基系纖 0 維薄片等上,將每片聚氟化伸乙基系纖維薄片載持於熱板 上,進行所定溫度及時間之加熱。 進行上述水分量調整處理時,可減低因熱壓著時、熱 硬化時、焊接迴流時的結著產生等之接著不良,可製造出 具有耐熱性之半導體裝置。 上述半導體元件與被接著體之熱壓著,例如可於20〜 250°C之加熱溫度下,以0.01〜20kgf之荷重藉由0.1〜300 秒壓著而進行。 Φ 上述經圖型化之薄膜狀感光性接著劑係經過由將薄膜 狀感光性接著劑所成之接著劑層形成於被接著體上之接著 劑層形成步驟、將該接著劑層以所定圖型下進行曝光之曝 光步驟、及將曝光後的接著劑層藉由鹸性水溶液進行顯像 之顯像步驟而形成爲佳。 接著劑層形成步驟中,例如將薄膜狀感光性接著劑用 組成物(清漆)於矽晶圓等被接著體上以輥,較佳爲20〜 1 5 0 °C的溫度下進行加壓並藉由層合而可形成接著劑層。 曝光步驟中,例如將形成所定圖型之光罩載持於上述 201013854 接著劑層上,使用高精度平行曝光機(OAK製作所製), 以曝光量:100〜1 000mJ/cm2之條件下,可照射(曝光) 紫外線。又,上述接著劑圖型亦可爲於上述接著劑層使用 直接描繪曝光技術,直接將圖型進行描繪曝光者。該曝光 步驟後,視必要亦可進行40 °C〜120 °C之5秒〜30秒加熱 〇 顯像步驟中,例如使用四甲基銨鹵化物(TMAH) 1.0 〜5.0%,較佳爲2.3 8%溶液進行噴霧顯像,可將接著劑層 形成爲圖型狀。其中,薄膜狀感光性接著劑爲正型時,取 出曝光部,若爲負型時,剩下曝光部。 上述圖型之線幅以0.01mm〜20mm之範圍内爲佳。 又,對於上述圖型之形狀雖無特別限制,例如可舉出 額緣狀、線狀、貫通穴等形狀,其中亦以額緣狀時,可得 到安定之經圖型化的接著劑故較佳。 上述薄膜狀感光性接著劑至少含有(A)熱塑性樹脂 及(B)熱硬化性樹脂者爲佳,且進一步含有(C)放射線 聚合性化合物及(D)光啓始劑爲佳。 (A)熱塑性樹脂僅於鹼顯像液爲可溶即可,並無特 別限制,例如可舉出選自聚醯亞胺樹脂、聚醯胺樹脂、聚 醯胺亞胺樹脂、聚醚亞胺樹脂、聚尿烷亞胺樹脂、聚尿烷 醯胺亞胺樹脂、矽氧烷聚醯亞胺樹脂、聚酯亞胺樹脂或彼 等共聚物以外,可舉出苯氧基樹脂、聚碾樹脂、聚醚硒樹 脂、聚苯硫醚樹脂、聚酯樹脂、聚醚酮樹脂、(甲基)丙 烯酸共聚物等所成群之至少1個以上之樹脂等,其中由顯 -12- 201013854 像性與耐熱性兩立之觀點來看,以聚醯亞胺樹脂爲佳,於 側鏈或末端具有羧基及/或羥基等鹼可溶性基之聚醯亞胺 樹脂爲較佳。 聚醯亞胺樹脂,例如可由將四羧酸二酐與二胺以公知 方法進行縮合反應而得到。即,有機溶劑中,四羧酸二酐 與二胺可爲等莫耳或視必要對於四羧酸二酐的合計l.Omol 而言,二胺之合計以 0.5〜2.0mol爲佳,較佳爲 0.8〜 • 1 · Omol之範圍下調整組成比(各成分之添加順序爲任意) ,反應溫度80°C以下,較佳爲0〜60°C下進行加成反應。 隨著反應進行,反應液之黏度會徐徐上升,生成聚醯亞胺 樹脂的前驅物之聚醯胺酸。且,欲抑制接著劑之各特性降 低,以上述四羧酸二酐爲以乙酸酐進行再結晶純化處理者 爲佳。 且,對於上述縮合反應中之四羧酸二酐與二胺之組成 比,對於四羧酸二酐之合計l.Omol而言,二胺合計超過 # 2.Omol時,於所得之聚醯亞胺樹脂中,胺末端之聚醯亞胺 寡聚物量會有增多之傾向,另一方面,二胺之合計未達 0.5mol時,酸末端之聚醯亞胺寡聚物的量會有增多之傾向 ,對於任一情況,聚醯亞胺樹脂之重量平均分子量會降低 ,含接著劑之耐熱性的種種特性會有降低之傾向。 又,欲使所得之聚醯亞胺樹脂的重量平均分子量成爲 10000〜300000,可適宜決定四羧酸二酐與二胺之裝入組 成比爲佳。 聚醯亞胺樹脂可由將上述反應物(聚醯胺酸)進行脫 -13- 201013854 水閉環而得。脫水閉環可藉由加熱處理之熱閉環法、使用 脫水劑之化學閉環法等而進行。 作爲聚醯亞胺樹脂之原料所使用的四羧酸二酐並無特 別限制,例如可舉出均苯四甲酸二酐、3,3’,4,4’-聯苯基四 羧酸二酐、2,2·,3,3·-聯苯基四羧酸二酐、2,2-雙(3,4·二 羧基苯基)丙烷二無水物、2,2-雙(2,3-二羧基苯基)丙 烷二無水物、1,1-雙(2,3-二羧基苯基)乙烷二無水物、 1,1-雙(3,4-二羧基苯基)乙烷二無水物、雙(2,3-二羧基 _ 苯基)甲烷二無水物、雙(3,4-二羧基苯基)甲烷二無水 物、雙(3,4-二羧基苯基)碾二無水物、3,4,9,10-茈四羧 酸二酐、雙(3,4-二羧基苯基)醚二無水物、苯-1,2,3,4-四羧酸二酐、3,4,3',4'-二苯甲酮四羧酸二酐、2,3,2',3'-二 苯甲酮四羧酸二酐、3,3,3’,4'-二苯甲酮四羧酸二酐、 1,2,5,6-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、2,3,6,7-萘 四羧酸二酐、1,2,4,5-萘四羧酸二酐、2,6-二氯萘-l,4,5,8-四羧酸二酐、2,7-二氯萘-l,4,5,8-四羧酸二酐、2,3,6,7-四 @ 氯萘-1,4,5,8-四羧酸二酐、菲-1,8,9,10-四羧酸二酐、吡 嗪-2,3,5,6-四羧酸二酐、噻吩-2,3,5,6-四羧酸二酐、 2,3,3’,4’-聯苯基四羧酸二酐、3,4,3’,4'-聯苯基四羧酸二酐 、2,3,2',3’-聯苯基四羧酸二酐、雙(3,4-二羧基苯基)二 甲基矽烷二無水物、雙(3,4-二羧基苯基)甲基苯基矽烷 二無水物、雙(3,4 -二羧基苯基)二苯基矽烷二無水物、 1,4-雙(3,4-二羧基苯基二甲基甲矽烷基)苯二無水物、 1,3-雙(3,4-二羧基苯基)-1,1,3,3-四甲基二環己烷二無水 -14- 201013854 牧J ' P-伸苯基雙(偏苯三酸酯無水物)、伸乙基四羧酸二 酐、1,2,3,4-丁烷四羧酸二酐、十氫萘-14,5,8-四羧酸二酐 、4,8-二甲基-12,3,5,6,7-六氫萘-1,2,5,6_四羧酸二酐、環 戊烷-1,2,3,4-四羧酸二酐、吡咯烷-2,3,4,5_四羧酸二酐、 1,2,3,4-環丁烷四羧酸二酐、雙(外-雙環〔2.2.1〕庚烷-2,3-二羧酸二酐、雙環_〔2.2.2〕-辛-7-烯-2,3,5,6-四羧酸 二酐、2,2-雙(3,4·二羧基苯基)丙烷二無水物、2,2_雙〔 • 4_ ( 3,4_二羧基苯基)苯基〕丙烷二無水物、2,2-雙(3,4- 二羧基苯基)六氟丙烷二無水物、2,2-雙〔4-(3,4-二羧 基苯基)苯基〕六氟丙烷二無水物、4,4·-雙(3,4-二羧基 苯氧基)二苯基硫化物二無水物、1,4-雙(2-羥基六氟異 丙基)苯雙(偏苯三酸酐)、1,3-雙(2-羥基六氟異丙基 )苯雙(偏苯三酸酐)、5- (2,5 -二側氧基四氫呋喃)-3-甲基-3-環己烯-1,2 -二羧酸二酐、四氫呋喃-2,3,4,5 -四羧酸 二酐、下述一般式(I)所示四羧酸二酐等。 ❿ [化1]
〔式中,a表示2〜20之整數〕。 上述一般式(I)所示四羧酸二酐,例如偏苯三酸酐 單氯化物及可由對應之二醇所合成,具體可舉出1,2-(伸 -15- 201013854 乙基)雙(偏苯三酸酯無水物)、1,3-(三伸甲基)雙( 偏苯三酸酯無水物)、1,4-(四伸甲基)雙(偏苯三酸酯 無水物)、1,5-(五伸甲基)雙(偏苯三酸酯無水物)、 1,6-(六伸甲基)雙(偏苯三酸酯無水物)、1,7-(七伸 甲基)雙(偏苯三酸酯無水物)、1,8·(八伸甲基)雙( 偏苯三酸酯無水物)、1,9-(九伸甲基)雙(偏苯三酸酯 無水物)、1,10-(十伸甲基)雙(偏苯三酸酯無水物)、 1,12·(十二伸甲基)雙(偏苯三酸酯無水物)、1,16-( 十六伸伸甲基)雙(偏苯三酸酯無水物)、1,18-(十八伸 甲基)雙(偏苯三酸酯無水物)等。 又,作爲四羧酸二酐,由對溶劑賦予良好溶解性及耐 濕信頼性之觀點來看,以下述一般式(II )或(III )所示 四羧酸二酐爲佳。 [化2]
-16 - 201013854 如以上,四羧酸二酐可單獨使用1種或組合2種類以 上後使用。 作爲上述聚醯亞胺樹脂之原料所使用的二胺,以含有 下述式(IV )〜(VII )所示芳香族二胺者爲佳。這些下 述式(IV )〜(VII)所示二胺爲全二胺之1〜70莫耳%時 爲佳。藉此可調製出可溶於鹼顯像液之聚醯亞胺樹脂。
[化4] H2N、^v^NH2
COOH
[化5]
(V)
(VI)
OH 17- 201013854 [化7]
作爲使用爲上述聚醯亞胺樹脂之原料的其他二胺,並 無特別限定,例如可舉出〇-伸苯基二胺、m-伸苯基二胺、 p-伸苯基二胺、3,3,-二胺基二苯基醚、3,4'-二胺基二苯基 ® 醚、4,4'-二胺基二苯基醚、3,3’-二胺基二苯基甲烷、3,4·-二胺基二苯基甲烷、4,4'-二胺基二苯基甲烷、雙(4-胺基-3,5-二甲基苯基)甲烷、雙(4-胺基-3, 5-二異丙基苯基) 甲烷、3,3’-二胺基二苯基二氟甲烷、3,4'-二胺基二苯基二 氟甲烷、4,4'-二胺基二苯基二氟甲烷、3,3’-二胺基二苯基 碾、3,4'-二胺基二苯基颯、4,4'-二胺基二苯基楓、3,3'-二 胺基二苯基硫化物、3,4'-二胺基二苯基硫化物、4,4'-二胺 基二苯基硫化物、3,3'-二胺基二苯基酮、3,4’-二胺基二苯 Θ 基酮、4,4'·二胺基二苯基酮、2,2-雙(3-胺基苯基)丙烷 、2,2’-(3,4’-二胺基二苯基)丙烷、2,2-雙(4-胺基苯基 )丙烷、2,2-雙(3-胺基苯基)六氟丙烷、2,2- (3,4'-二 胺基二苯基)六氟丙烷、2,2-雙(4-胺基苯基)六氟丙烷 、1,3-雙(3-胺基苯氧基)苯、1,4-雙(3-胺基苯氧基)苯 、1,4-雙(4-胺基苯氧基)苯、3,3’- ( 1,4-伸苯基雙(1-甲 基亞乙基))二苯胺、3,4'-(1,4-伸苯基雙(1-甲基亞乙 基))二苯胺、4,4·-(1,4-伸苯基雙(1-甲基亞乙基)) -18- 201013854 [化 ίο] Q5H2N—Q4-Si- Q7 〇 Q8 -Q9HSIH2 (XI) d 〔式中,Q4及Q9各獨立表示碳數1〜5的伸烷基或可具有 φ 取代基之伸苯基,Q5、Q6、Q7及Q8各獨立表示碳數1〜5 的院基、本基或本氧基’ d表不1〜5的整數〕。 作爲上述一般式(VIII)所示脂肪族醚二胺,具體爲 下述式; [化 11] ❹
HbN^CHa^-O-^CHaijO-fCHiVNHs Mw*350 Mw-750 ^NKCHdjicKCHiVJrCHCHf^NHi 1100 Mw«2100 BfeN^lKCH^H2)f〇-CH{CH9HCH*>t〇^CH*HaiCCH3>-NHi Mw= lijN-CHCCIisHCHi^fo-CiHCHsHCHiHTO'^HafCHCCHyHNHz Mw=400 IfcN-CHiCHaKCHs^-CHtCHaHCH*士 (HCH*>〇H(CH»HMH« Mw»2000 可舉出所示脂肪族二胺以外,亦可舉出下述式(IX)所示 脂肪族醚二胺。 -20- 201013854 二苯胺、2,2-雙(4- (3-胺基苯氧基)苯基)丙院、2,2-雙 (4-(3-胺基苯氧基)苯基)六氟丙烷、2,2-雙(4-(4-胺 基苯氧基)苯基)六氟丙烷、雙(4-(3_胺基苯氧基)苯 基)硫化物、雙(4- ( 4-胺基苯氧基)苯基)硫化物、雙(4-(3-胺基苯氧基)苯基)颯、雙(4- (4-胺基苯氧基)苯 基)碾、3,3'-二羥基-4,4'-二胺基聯苯基、3,5-二胺基安息 香酸等芳香族二胺、1,3_雙(胺基甲基)環己烷、2,2-雙 (4-胺基苯氧基苯基)丙烷、2,2-雙(3-胺基-4-羥基苯基 )六氟丙烷、下述一般式(VIII)所示脂肪族醚二胺、下 述一般式(X)所不脂肪族二胺、下述一般式(XI)所示 矽氧烷二胺等。 [化8] H2N—Q^o—Q2)pO~Q3--NH2 (Vin) 〔式中,Q1、Q2及Q3各獨立表示碳數卜1〇的伸院基,,© 表示2〜80之整數〕。 [化9] 〔式中’ C表示5〜20之^數〕。 -19- 201013854 [化 12] 〇—
NH2 (IX) ch3 NH2—CHCH2-f〇—6hCH2·^-〔式中,e表示0〜80的整數〕。 作爲上述一般式(X)所示脂肪族二胺’具體可舉出 1,2-二胺基乙烷、1,3-二胺基丙烷、1,4-二胺基丁烷、1,5-二胺基戊烷、1,6-二胺基己烷、1,7-二胺基庚烷、1,8-二胺 基辛烷、1,9-二胺基壬烷、1,10-二胺基癸烷、1,1 1-二胺基 十一碳烷、1,12-二胺基十二烷、1,2-二胺基環己烷等。 作爲上述一般式(XI)所示矽氧烷二胺,具體爲一般 式(XI)中d爲1者,可舉出1,1,3,3-四甲基-1,3-雙(4-胺基苯基)二矽氧烷、1,1,3,3-四苯氧基-1,3-雙(4-胺基 乙基)二矽氧烷、1,1,3,3-四苯基-1,3-雙(2-胺基乙基) 二矽氧烷、1,1,3,3-四苯基-1,3-雙(3-胺基丙基)二矽氧 烷、1,1,3,3-四甲基-1,3-雙(2-胺基乙基)二矽氧烷、 1,1,3,3-四甲基-1,3-雙(3-胺基丙基)二矽氧烷、l,l,3,3-四甲基-l,3-雙(3-胺基丁基)二矽氧烷、l,3-二甲基-l,3-二甲氧基-l,3·雙(4-胺基丁基)二矽氧烷等。 又,作爲d爲2者,可舉出1,ι,3,3,5,5 -六甲基-1,5-雙(4-胺基苯基)三矽氧烷、丨,四苯基-3,3_二甲基-1,5 -雙(3 -胺基丙基)三矽氧烷、1 jj,%四苯基-3,3_二甲 氧基-1,5 -雙(4 -胺基丁基)三矽氧烷、n5,5 -四苯基-3,3-二甲氧基-1,5-雙(5-胺基戊基)三矽氧烷、1,1,5,5_四 -21 - 201013854 甲基-3,3-二甲氧基-1,5-雙(2-胺基乙基)三矽氧烷、 1,1,5,5-四甲基-3,3-二甲氧基-1,5-雙(4-胺基丁基)三矽 氧烷、M,5,5-四甲基-3,3-二甲氧基-1,5-雙(5-胺基戊基 )三矽氧烷、1,1,3,3,5,5·六甲基-1,5-雙(3-胺基丙基)三 矽氧烷、1,1,3,3,5,5-六乙基-1,5-雙(3-胺基丙基)三矽氧 烷、1,1,3,3,5,5-六丙基-1,5-雙(3-胺基丙基)三矽氧烷等 〇 作爲上述聚醯亞胺樹脂之原料所使用的其他他二胺以 含有氟原子者爲佳,以2,2-雙(3-胺基-4-羥基苯基)六氟 丙烷(以下稱爲「BIS-AP-AF」)爲較佳。使用含有氟原 子之二胺時,可將薄膜狀感光性接著劑之水分量調整至較 低。推測此爲藉由分子中含有氟原子,可使吸濕之水分量 變少,又因吸濕水分之親和性亦低,故水分容易蒸發所致 〇 上述二胺可單獨使用1種或組合2種以上使用。 又,上述聚醯亞胺樹脂可單獨使用1種或視必要混合 (摻合)2種以上使用。 (B)熱硬化性樹脂爲藉由熱引起交聯反應而得知反 應性化合物。作爲如此化合物,例如可舉出環氧樹脂、氰 酸酯樹脂、雙馬來醯亞胺樹脂、酚樹脂、尿素樹脂、三聚 氰胺樹脂、醇酸樹脂、丙烯酸樹脂、不飽和聚酯樹脂、鄰 苯二甲酸二烯丙基酯樹脂、矽氧烷樹脂、間苯二酚甲醛樹 脂、二甲苯樹脂、呋喃樹脂、聚尿烷樹脂、酮樹脂、三烯 丙基氰尿酸酯樹脂、聚異氰酸酯樹脂、含有參(2-羥基乙 -22- 201013854 基)三聚異氰酸酯之樹脂、含有三烯丙基偏苯三酸酯之樹 脂、由環戊二烯所合成之熱硬化性樹脂、芳香族二胺基氰 之三量化所得之熱硬化性樹脂等。 其中,亦以高溫中具有優良接著力的觀點來看,以環 氧樹脂、氰酸酯樹脂及雙馬來醯亞胺樹脂爲佳,由作業性 、生產性之觀點來看’以環氧樹脂爲特佳。這些(B)熱 硬化性樹脂可單獨使用1種或組合2種類以上使用。 φ 作爲上述環氧樹脂,以分子内至少含有2個以上環氧 基者爲佳,由硬化性或硬化物特性之觀點來看,以酚之環 氧丙基醚型的環氧樹脂爲特佳。作爲如此樹脂,例如可舉 出雙酚A型(或AD型、S型、F型)之環氧丙基醚、水 添加雙酚A型之環氧丙基醚、環氧乙烷加成體雙酚A型 之環氧丙基醚、伸丙基氧化物加成體雙酚A型之環氧丙基 醚、酚漆用酚醛樹脂之環氧丙基醚、甲酚漆用酚醛樹脂之 環氧丙基醚、雙酚A漆用酚醛樹脂之環氧丙基醚、萘樹脂 0 之環氧丙基醚、3官能型(或4官能型)之環氧丙基醚、 二環戊二烯酚樹脂之環氧丙基醚、二聚物酸之環氧丙基酯 、3官能型(或4官能型)之環氧丙基胺、萘樹脂之環氧 丙基胺等。這些可單獨使用1種或組合2種類以上使用。 又,這些環氧樹脂中,可使用雜質離子之鹼金屬離子 、鹼土類金屬離子、鹵素離子,特別使用將氯離子或水解 性氯等減低至300ppm以下的高純度品時,於電遷移( electromigration )防止或金屬導體電路之腐蝕防止上爲佳 -23- 201013854 (B )熱硬化性樹脂的含有量,以接著劑之固體成分 全量100質量份爲基準時’以5〜200質量份者爲佳,以 10〜100質量份爲較佳。該含有量若未達5質量份時,有 著耐熱性降低之傾向’超過200質量份時,有著薄膜形成 性變差之傾向。 (C)放射線聚合性化合物爲藉由紫外線或電子束等 放射線的照射,進行聚合及/或硬化之化合物即可,並無 特別限制。作爲放射線聚合性化合物之具體例,可舉出丙 烯酸甲基、甲基丙烯酸甲基、丙烯酸乙基、甲基丙烯酸乙 基、丙烯酸丁基、甲基丙烯酸丁基、丙烯酸2-乙基己基、 甲基丙烯酸2-乙基己基、戊烯基丙烯酸酯、四氫糠基丙烯 酸酯、四氫糠基甲基丙烯酸酯、二乙二醇二丙烯酸醋、三 乙二醇二丙烯酸酯、四乙二醇二丙烯酸酯、二乙二醇二甲 基丙烯酸酯、三乙二醇二甲基丙烯酸酯、四乙二醇二甲基 丙烯酸酯、三羥甲基丙烷二丙烯酸酯、三羥甲基丙烷三丙 烯酸酯、三羥甲基丙烷二甲基丙烯酸酯、三羥甲基丙烷三 甲基丙烯酸酯、1,4-丁二醇二丙烯酸酯、l,6-己二醇二丙 烯酸酯、1,4-丁二醇二甲基丙烯酸酯、1,6-己二醇二甲基 丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、 季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二 季戊四醇六丙烯酸酯、二季戊四醇六甲基丙烯酸酯、苯乙 烯、二乙烯基苯、4-乙烯基甲苯、4-乙烯基吡啶、N-乙烯 基吡咯烷酮、2-羥基乙基丙烯酸酯、2-羥基乙基甲基丙烯 酸酯、1,3-丙烯醯氧基-2-羥基丙烷、1,2-甲基丙烯醯氧基- -24- 201013854 2-羥基丙烷、伸甲基雙丙烯醯胺、Ν,Ν-二甲基丙烯醯胺、 Ν-羥甲基丙烯醯胺、參(β-羥基乙基)三聚異氰酸酯的三 丙烯酸酯、下述一般式(XII)所示化合物、尿烷丙烯酸 酯、尿烷甲基丙烯酸酯、尿素丙烯酸酯等。 [化 13]
〔式中’ R41及R42各獨立表示氫原子或甲基,f及g各獨 立表示1以上的整數〕。 上述尿烷丙烯酸酯及尿烷甲基丙烯酸酯,例如可藉由 二醇類、下述一般式(XIII )所示異氰酸酯化合物、及下 述一般式(XIV)所示化合物之反應而生成。
[化 14] (NCO)h (XIII)
OCN—R43—NCO 〔式中,R4 3表示碳數1〜30之2價或3價有機基,h表 示0或1〕。 -25- 201013854 [化 15] R44 ex i V)
H2C=i—C—O—R45 - OH
II o 〔式中,R44表示氫原子或甲基,R45表示伸乙基或伸丙基 3 ° 上述尿素甲基丙烯酸酯,例如可藉由下述一般式( XV)所示二胺與、下述一般式(XVI)所示化合物之反應 而生成。 [化 16] H2N—R46—NH2 (XV) 〔式中,R46表示碳數2〜30之2價有機基〕。 [化 17] ch3 (XV 1) H2c=c—〇-fCH2CH2〇)~NCO Ο 〔式中,i表示0或1〕。 如以上之化合物以外,可使用於含有官能基之乙烯基 -26- 201013854 共聚物至少具有1個乙烯性不飽和基、與具有環氧乙烷環 、異氰酸酯基、羥基、及羧基等官能基之化合物進行加成 反應而得之側鏈上具有乙烯性不飽和基的放射線聚合性共 聚物等。 這些放射線聚合性化合物可單獨使用1種或組合2種 類以上使用。其中,亦以上述一般式(XII )所示放射線 聚合化合物於硬化後賦予充分之耐溶劑性而較佳,尿烷丙 • 烯酸酯及尿烷甲基丙烯酸酯可於硬化後賦予充分高接著性 故較佳。 (C)放射線聚合性化合物之含有量對於(A)熱塑性 樹脂100質量份而言,以20〜200質量份爲佳,以30〜 1〇〇質量份爲較佳。超過該含有量200質量份時,藉由聚 合會降低熱溶融時之流動性,熱壓著時的接著性有降低之 傾向。另一方面,未達20質量份時,藉由曝光會降低光 硬化後之耐溶劑性,有著難以形成圖型之傾向。 Ο 所謂(D)光啓始劑爲藉由放射線照射生成游離自由 基的光聚合啓始劑或藉由放射線照射產生鹼之光鹼產生劑 等。 作爲藉由放射線照射生成游離自由基之光聚合啓始劑 ,欲使感度良好,於300〜500 nm中具有吸收帶者爲佳。 作爲該光聚合啓始劑之具體例,可舉出二苯甲酮、 Ν,Ν’-四甲基-4,4,-二胺基二苯甲酮(米希勒酮)、Ν,Ν·-四 乙基-4,4'-二胺基二苯甲酮、4 -甲氧基- 4'-二甲基胺基二苯 甲酮、2-苯甲基-2-二甲基胺基-1-( 4-嗎啉代苯基)-丁酮_ -27- 201013854 1、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、1-羥基-環己基-苯 基-銅、2 -甲基-1-( 4-(甲基硫)苯基)-2-嗎琳代丙嗣-1 、2,4-二乙基噻噸酮、2-乙基蒽醌、菲醌等芳香族酮、苯 偶因甲基醚、苯偶因乙基醚、苯偶因苯基醚等苯偶因醚、 甲基苯偶因、乙基苯偶因等苯偶因、苯甲基二甲基嗣縮醇 等苯甲基衍生物、2- (〇·氯苯基)-4,5-二苯基咪唑二量體 、2-(〇-氯苯基)-4,5-二(m-甲氧基苯基)咪唑二量體、 2- (〇-氟苯基)-4,5-苯基咪唑二量體、2-(〇 -甲氧基苯基 )-4,5-—苯基咪哩一量體、2- (p -甲氧基苯基)-4,5 -二苯 基咪唑二量體、2,4-二(p-甲氧基苯基)-5-苯基咪唑二量 體、2- (2,4 -一甲氧基苯基)-4,5 -二苯基味哩二量體等 2,4,5-三芳基咪唑二量體、9-苯基、1,7-雙(9,9'-吖啶基) 庚烷等吖啶衍生物、雙(2,6-二甲氧基苯甲醯基)-2,4,4-三甲基-戊基膦氧化物、雙(2,4,6,-三甲基苯甲醯基)-苯 基膦氧化物等雙醯基膦氧化物等。這些可單獨使用1種或 組合2種類以上使用。 又’所謂上述光鹸產生劑,僅爲於放射線照射時產生 鹼之化合物即可,並無特別限制。作爲所產生之鹼,由反 應性、硬化速度之觀點來看以強鹼性化合物爲佳。一般而 言,作爲鹼性之指標使用酸解離定數之對數的pKa値,水 溶液中之pKa値爲7以上的鹼爲佳,且9以上之鹼爲較佳 〇 作爲如此放射線照射時所產生之鹼,例如可舉出咪唑 、2,4 -二甲基咪唑、1·甲基咪唑等咪唑衍生物、哌曝、 -28- 201013854 2,5-二甲基哌嗪等哌嗪衍生物、哌啶、ι,2_二甲基哌啶等 哌啶衍生物、脯胺酸衍生物、三甲基胺、三乙胺、三乙醇 胺等三烷基胺衍生物、4-甲基胺基吡啶、4-二甲基胺基吡 啶等4位上由胺基或烷基胺基所取代之吡啶衍生物、吡咯 烷、η-甲基吡咯烷等吡略烷衍生物、三伸乙二胺、1,8-二 氧雜雙環(5,4,0)十一碳烯-1 (DBU)等脂環式胺衍生物 、苯甲基甲基胺、苯甲基二甲基胺、苯甲基二乙胺等苯甲 • 基胺衍生物等。 作爲將如上述之鹼藉由放射線照射所產生之光鹼產生 劑,例如可使用 Journal of Photopolymer Science and Technology 12 卷、313 〜314 項(1 999 年)、Chemistry of Materials 11卷、170〜176項(1999年)等所記載之4 級銨鹽衍生物。 又,作爲光驗產生劑,可使用 Journal of American ChemicalSociety 118 卷 1 2 925 頁(1 996 年)、Polymer Φ Journal 28卷795頁(I"6年)等所記載之胺基甲酸衍 生物。 又,藉由活性光線之照射產生1級胺基的肟衍生物, 作爲光自由基產生劑之販賣品,可使用2-甲基-1- ( 4-( 甲基硫)苯基)-2-嗎琳代丙院-l-_ (Ciba Speciality Chemicals 公司製、IRGACURE 90 7 ) 、2-苯甲基-2-二甲 基胺基-1- ( 4-嗎啉代苯基)-丁酮-1 ( Ciba Speciality Chemicals公司製、IRGACURE 3 69 )、六芳基雙咪嗤衍生 物(鹵素、烷氧基、硝基、氰基等取代基可於苯基上取代 -29- 201013854 )、苯並異噁唑酮衍生物等。 又,使用藉由上述放射線照射產生鹼之光鹼產生劑以 外、或取代之藉由光弗賴斯轉位、光克萊森轉位(光 Cleisen轉位)、庫爾提斯轉位(Curtius轉位)、史蒂芬 斯轉位(Stevens轉位)等反應產生鹼,進行環氧樹脂之 硬化。 這些化合物於室溫未經放射線照射之狀態下因未顯示 與環氧樹脂之反應性,具有室溫中之貯藏安定性非常優良 @ 之特徴。
(D )光啓始劑之含有量,並無特別限制,對於(A )熱塑性樹脂100質量份而言,一般爲0.01〜30質量份 〇 又,上述薄膜狀感光性接著劑中,視必要亦可含有硬 化促進劑。作爲上述硬化促進劑,僅可硬化(B )熱硬化 性樹脂者即可,並無特別限制,例如可舉出咪唑類、二氰 二醯胺衍生物、二羧酸二醯肼、三苯基鱗、四苯基鳞四苯 ❹ 基硼酸酯、2-乙基-4-甲基咪唑-四苯基硼酸酯、1,8-二氧雜 雙環〔5.4.0〕十一碳烯-7-四苯基硼酸酯等。 使用上述環氧樹脂時,視必要於上述薄膜狀感光性接 著劑可含有硬化劑。作爲上述硬化劑,例如可舉出酚系化 合物、脂肪族胺、脂環族胺、芳香族聚胺、聚醢胺、脂肪 族酸酐、脂環族酸酐、芳香族酸酐 '二氰二醯胺、有機酸 二醯肼、三氟化硼胺錯體、咪唑類、第3級胺等。其中亦 以酚系化合物爲佳,分子中至少具有2個以上酚性羥基之 -30- 201013854 酚系化合物爲較佳。 作爲如此化合物,例如可舉出酚 酚醛、t-丁基酚漆用酚醛、二環戊二 環戊二烯酚漆用酚醛、伸苯二甲基變 系化合物、參酚系化合物、肆酚漆用 醛、聚·Ρ_乙烯基酚、酚芳烷基樹脂等 均分子量爲400〜1 500之範圍内者爲 • 時可抑制造成半導體元件或裝置等污 上述薄膜狀感光性接著劑中可含 塡充物,例如可舉出氧化鋁、氫氧化 鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化 、氮化鋁、結晶性二氧化矽、非晶性 二氧化鈦、玻璃、氧化鐵、陶瓷等無 系塡充物等有機塡充物等,無論種類 制下可使用。 Φ 上述塡充物之含有量,可對應所 決定,但對於樹脂成分與塡充物的合 50質量%,較佳爲2〜40質量%,更 藉由增量塡充物,可達到高彈性率化 (經切割器刃之切斷性)、線接法! 波效率)、加熱時之接著強度。 將塡充物增加至必要量以上時, 之傾向,故塡充物之含有量控制於上 到所求特性之平衡而決定最適塡充物 漆用酚醛、甲酚漆用 烯甲酚漆用酚醛、二 性酚漆用酚醛、萘酚 酚醛、雙酚Α漆用酚 。彼等中,亦以數平 佳。藉此,於熱壓著 染原因之外面氣體。 有塡充物。作爲上述 鋁、氫氧化鎂、碳酸 鈣、氧化鎂、氧化鋁 二氧化矽、窒化硼、 機塡充物、碳、橡膠 ί ·形狀等皆無特別限 賦予之特性或功能而 計而言,一般爲1〜 佳爲5〜3 0質量%。 ,有效地提高切割性 〔bonding)性(超音 有熱壓著性遭到損害 述範圍内爲佳。欲達 含有量。使用塡充物 -31 - 201013854 時的混合·混煉使用適當組合一般攪拌機、擂潰機、三輥 攪拌機、球磨機等分散機而進行。 上述薄膜狀感光性接著劑中,欲使異種材料間之界面 結合良好,可含有矽烷偶合劑等,又吸附離子性雜質,使 吸濕時之絕緣信頼性良好,可含有離子捕捉劑。且欲反應 熱硬化時所殘存之未反應丙烯酸酯,可含有熱自由基產生 劑。 上述薄膜狀感光性接著劑爲,可將上述成分於例如二 甲基甲醯胺、甲苯、苯、伸二甲苯基、甲基乙基酮、四氫 呋喃、乙基溶纖劑、乙基溶纖劑乙酸酯、二噁烷、環己酮 、乙酸乙酯、及N-甲基-吡咯烷酮等有機溶劑中溶解後調 製出清漆,將此塗佈於剝離劑處理PET等基材上,乾燥後 而製作。 上述薄膜狀感光性接著劑作爲粒接合(bonding )用 之接著劑使用時,以可兼具作爲形成經圖型化之絕緣樹脂 膜的感光性樹脂之功能者爲佳。 作爲本發明之相關半導體裝置及半導體裝置之製造方 法的實施形態,可舉出具有層合半導體元件之結構的半導 體裝置、照相機組件用之半導體裝置、具有倒裝晶片( Flip Chip)結構之半導體裝置等。以下表示這些實施形態 ,但本發明並未限定於以下形態。 圖1、2、3、4、5及6表示半導體裝置之製造方法一 實施形態的端面圖或平面圖。有關本實施形態之半導體裝 置的製造方法爲,可具備於半導體晶圓2内所形成之半導 -32- 201013854 體元件20的電路面25上設置薄膜狀感光性接著劑1的步 驟(圖1(a) 、( b))、將於半導體元件20的電路面 25上所設置的薄膜狀感光性接著劑1藉由曝光及顯像而進 行之圖型化步驟(圖1(c)、圖2(a))、將半導體晶 圓2由與電路面25爲反面進行硏磨使得半導體晶圓2變 薄之步驟(圖2(b))、藉由切割半導體晶圓2而切分爲 複數半導體元件20之步驟(圖2(c)、圖4(a))、拾 φ 取半導體元件20裝入於半導體裝置用板狀支持基材7的 步驟(圖4(b)、圖5(a))、於支持基材7裝上之半 導體元件20的電路面上於經圖型化之感光性接著劑1直 接接著第2層之半導體元件21的步驟(圖5(b))、與 將各半導體元件20,2 1與外部連接端子連接之步驟(圖6 )° 於圖1(a)所示半導體晶圓2内,形成記由切割線 90所區分的複數半導體元件20。於該半導體元件20之電 # 路面25側面上設有薄膜狀感光性接著劑1(圖1(b)) 。預先準備成形爲薄膜狀之感光性接著劑1,將此貼合於 半導體晶圓2之方法爲簡便。 感光性接著劑1爲藉由曝光及顯像而經圖型化之後對 於被接著體具有接著性,其爲可鹼顯像之負型感光性接著 劑。更詳細爲,將薄膜狀感光性接著劑1藉由曝光及顯像 而進行圖型化後所形成之光阻圖型,具有對於被接著體之 接著性。例如藉由於光阻圖型將被接著體視必要使其加熱 下進行壓著,可接著光阻圖型與被接著體。上述被接著體 -33- 201013854 可舉出半導體元件或玻璃基板等。且,被接著體之半導體 元件亦可形成經圖型化之薄膜狀感光性接著劑。 對於半導體晶圓2上經層合之感光性接著劑1,介著 於所定位置上形成開口的光罩3,以活性光線(典型爲紫 外線)照射(圖1(c))。藉此’感光性接著劑1曝光爲 所定圖型。 曝光後,感光性接著劑1中未經曝光之部分使用鹸顯 像液藉由顯像除去,使感光性接著劑1進行圖型化下可形 成開口 11(圖2(a))。且,取代負型可使用正型感光 性接著劑,此時的薄膜狀感光性接著劑中經曝光的部分藉 由顯像而除去。 圖3表示感光性接著劑1爲經圖型化之狀態的平面圖 。開口 1.1中,露出半導體元件20之焊接墊。即,經圖型 化之感光性接著劑1爲半導體元件20之緩衝液外套膜。 矩形狀開口 11於各半導體元件20上以複數形式並排而形 成。開口 11之形狀、配置及數目並非限定於如本實施形 態之形態,可適宜地變形成露出焊接墊等所定部分。 經圖型化後,將半導體晶圓2之與感光性接著劑1爲 反面進行硏磨,可將半導體晶圓2變薄至所定厚度(圖2 (b))。硏磨,例如可於感光性接著劑1上貼合黏著薄 膜,藉由黏著薄膜將半導體晶圓2固定於硏磨用模具而進 行。且,使半導體晶圓變薄之步驟可於進行圖型化前進行 。又,圖型化後使半導體晶圓變薄時上述黏著薄膜有時並 非必要。 -34- 201013854 硏磨後’於半導體晶圓2之對感光性接著劑1爲反面 上’具有粒接合薄膜30及切割薄膜40,層合彼等之複合 薄膜5貼合成粒接合薄膜3〇面向半導體晶圓2下銜接。 貼合時可依所需加熱下進行。 其次’藉由沿著切割線90之半導體晶圓2與複合薄 膜5同時切斷’可將半導體晶圓2切分成複數半導體元件 20 (圖4 ( a))。該切割,例如可藉由切割薄膜40使全 Φ 體固定於框架上之狀態下使用切割葉片進行。 切割後’與半導體元件20及貼合於該裏面的粒接合 薄膜30同時進行拾取(圖4(b) )»經拾取之半導體元 件20可介著粒接合薄膜30而組裝於支持基材7上(圖5 (a ) ) ° 對於組裝於支持基材7之半導體元件20上的感光性 接著劑1,可直接接著第2層之半導體元件21(圖5(b) )。換言之’半導體元件20、與位置於該上層的半導體元 W 件2 1,藉由介在彼等間之經圖型化之感光性接著劑1 (緩 衝液外套膜)而接著。半導體元件21接著於經圖型化之 感光性接著劑1中開口 11不會阻塞的位置上。且,半導 體元件21之電路面上亦形成經圖型化之感光性接著劑1 ( 緩衝液外套膜)者爲佳。 半導體元件21之接著,例如可進行藉由感光性接著 劑1加熱至表現流動性之溫度下進行熱壓著的方法。此時 ’藉由水分量處理薄膜狀感光性接著劑,可得到具有耐熱 性之半導體裝置。熱壓著後視必要亦可加熱感光性接著劑 -35- 201013854 1,進一步進行硬化。 其後,半導體元件20爲介著於該焊接墊所連接的線 圈80,與支持基材7上之外部連接端子連接,半導體元件 21爲介著於該焊接墊所連接之線圈81與支持基材7上之 外部連接端子連接。而含有複數半導體元件之層合體藉由 封止樹脂層60封住,可得到半導體裝置100 (圖6)。 半導體裝置之製造方法並非限定於如以上所說明之實 施形態,僅不脫離本發明之主旨,可作適宜變更。例如, 3接著薄膜之貼付、切割、曝光及顯像、以及半導體晶圓 的硏磨之各步驟順序可適宜地切入。如圖7所示,將貼合 有薄膜狀感光性接著劑1之半導體晶圓2藉由硏磨使其變 薄後可進行切割。此時,切割.後藉由曝光及顯像使感光性 接著劑1進行圖型化,得到與圖4(a)同樣之層合體。或 將藉由硏磨變薄之半導體晶圓經切割後,可進行薄膜狀感 光性接著劑1之貼合及其曝光及顯像。又,可層合3層以 上之半導體元件,此時,至少1組鄰接半導體元件彼此藉 由經圖型化之感光性接著劑(下層側之緩衝液外套膜)進 行直接接著爲佳。 又,圖8〜20表示半導體裝置之製造方法一實施形態 的圖。附有接著劑層之半導體晶圓120於半導體晶圓105 上,加熱接著薄膜(接著劑層)101下藉由層合而得到。 經由該附有接著劑層之半導體晶圓120介著接著劑層1〇1 將被接著體接著於半導體晶圓105之步驟而製造CCD帛 相機組件、CMOS照相機組件等電子零件上爲適用。以下 -36- 201013854 對於製造CCD照相機組件時的例子作說明。CMOS 組件亦可由同樣方法製造。 圖9表示接著劑圖型之一實施形態的上面圖, 表示沿著圖9之VI-VI線的端面圖。圖9、10所示 圖型l〇la爲,對作爲被接著體之半導體晶圓105 成如具有沿著圍繞設置於半導體晶圓105上的複數 素區域107的略正方形之邊緣的圖型。 參 圖11表示接著劑圖型之一實施形態的上面圖 爲沿著圖1 1之V111 - V111線的端面圖。圖1 1、1 2 著劑圖型101b作爲被接著體的半導體晶圓105上 化至形成於半導體晶圓105上所設之有效畫素區域 露出之略正方形的開口部。 接著劑圖型l〇la及101b爲,將感光性接著劑 所成之接著劑層101於作爲被接著體之半導體晶圓 形成而得到附有接著劑層之半導體晶圓120,將接 • 101介著光罩曝光,將曝光後之接著劑層101藉由 液進行顯像而形成。即,接著劑圖型101a及l〇lb 光後之感光性接著劑組成物所構成。 繼續,介著接著劑圖型l〇la或101b於半導 120接著另一方作爲被接著體之蓋玻璃1〇9。圖13 玻璃109介著接著劑圖型l〇la接著於半導體晶圓 狀態的上面圖,圖14表示沿著圖13之X_X線的端 圖15表示蓋玻璃1〇9介著接著劑圖型101b接著於 晶圓120的狀態之上面圖,圖16表示沿著圖15之
照相機 ,圖 10 接著劑 上,形 有效畫 ’圖12 表示接 ,圖型 107所 組成物 105上 著劑層 鹼水溶 係由曝 體晶圓 表示蓋 120之 面圖。 半導體 XI-XI -37- 201013854 線的端面圖。蓋玻璃9爲夾著經加熱硬化之接著劑圖型 101a或101b,接著於半導體晶圓120。將蓋玻璃109載持 於接著劑圖型l〇la或l〇lb上,將此藉由熱壓著,接著蓋 玻璃109。此時將薄膜狀感光性接著劑進行水分量調整處 理,可防止蓋玻璃之剝離等半導體裝置的不良現象。且, 接著劑圖型101a及101b可作爲接著蓋玻璃109之接著劑 使用之同時,亦可作爲確保圍繞有效畫素區域107之空間 的間隔物使用。 接著蓋玻璃1 09後,藉由沿著虛線D之切割,得到圖 17所示半導體裝置130a或圖18所示半導體裝置130b。 半導體裝置130a係由半導體晶圓105、有效畫素區域107 、接著劑圖型(接著劑層)101a及蓋玻璃109所構成。半 導體裝置13 0b係由半導體晶圓105、有效畫素區域107、 接著劑圖型(接著劑層)l〇lb及蓋玻璃109所構成。 上述半導體裝置可適用於CCD照相機組件等電子零 件。 圖19表示含有上述半導體裝置的顯示CCD照相機組 件之一實施形態的截面圖。圖19所示CCD照相機組件 15 0a爲具備作爲固體攝影元件之半導體裝置130a的電子 零件。半導體裝置130a爲介著黏晶(Die Bond)薄膜111 接著於半導體元件搭載用支持基材115。半導體裝置130a 爲介著線圈112,與外部連接端子進行電氣連接。 CCD照相機組件150a爲,具有與於有效畫素區域 107之正上方位置所設置之鏡片140、鏡片140、與鏡片 201013854 140’與內包半導體裝置130a而設置之側壁116於鏡片 140被鑲入之狀態下鏡片140及側壁116之間所介著之鑲 入用構件117載持於半導體元件搭載用支持基材115上之 構成。 圖20表示作爲電子零件之顯示CCD照相機組件之一 實施形態的截面圖。圖19所示CCD照相機組件150b爲 ’如上述實施形態,取代使用粒接合(bonding )薄膜接 # 著半導體裝置之構成,具有介著焊接113,半導體裝置 13 0a與半導體元件搭載用支持基材115進行接著之構成。 圖21表示半導體裝置的一實施形態所示截面圖。半 導體裝置201爲具備具有連接端子(第1連接部:無圖示 )之基板(第1被接著體)203、與具有連接用電極部( 第2連接部··無圖示)之半導體晶片(第2被接著體) 205、與由感光性接著劑所成之絕緣樹脂層207、與由導電 材所成之導電層2 09。基板203爲,具有與半導體晶片 # 205成對面之電路面211,與半導體晶片205於所定間隔 下進行配置。絕緣樹脂層207於基板203及半導體晶片 205之間,各銜接基板203及半導體晶片205而形成,具 有所定圖型層209爲,形成於基板203及半導體晶片205 之間的未配置絕緣樹脂層207之部分。半導體晶片205的 連接用電極部爲介著導電層2 09,與基板20 3之連接端子 以電氣連接。半導體裝置201可適用含有倒裝晶片(Flip Chip)結構之電子零件。 圖22〜圖26表示半導體裝置的製造方法之一實施形 •39- 201013854 態的截面圖。有關本實施形態的半導體裝置之製造方法爲 ,具備於具有連接端子之基板20 3上設有由感光性接著劑 所成之絕緣樹脂層207的步驟(第1步驟:圖22及圖23 )、與藉由將絕緣樹脂層207經曝光及顯像,露出連接端 子之開口 213可形成下製圖的步驟(第2步驟:圖24及 圖25)、與於開口 213塡充導電材形成導電層209之步驟 (第3步驟:圖26)、與將具有連接用電極部的半導體晶 片205直接接著於基板203與絕緣樹脂層207之層合體的 參 絕緣樹脂層207之同時,將基板203的連接端子與半導體 晶片20 5之連接用電極部介著導電層209以電氣連接之步 驟(第4步驟)。 於圖22所示基板203的電路面211上,設有由感光 性接著劑所成之絕緣樹脂層207 (圖23)。準備預先形成 爲薄膜狀之感光性接著劑(以下有時稱爲「接著薄膜」) ,將此貼合於基板203之方法爲簡便。且,感光性接著劑 爲使用旋轉塗佈法等將含有感光性接著劑之液狀清漆塗佈 @ 於基板203,進行加熱乾燥之方法而設置。 感光性接著劑爲藉由曝光及顯像於經製圖後對於被接 著體具有接著性,可鹼顯像之負型感光性接著劑。更詳細 爲,將感光性接著劑經曝光及顯像進行製圖所形成之光阻 圖型對於半導體晶片及基板等被接著體具有接著性。例如 於光阻圖型將被接著體視必要一邊加熱下一邊壓著’可接 著光阻圖型與被接著體。對於具有該功能的感光性接著劑 之詳細情形如後述。 -40- 201013854 對於於基板203上設有絕緣樹脂層207,介著於所定 位置上形成開口之光罩215,照射活性光線(典型爲紫外 線)(圖24)。藉此,絕緣樹脂層207以所定圖型進行曝 光。 曝光後,將絕緣樹脂層207中未曝光的部分,藉由使 用鹼顯像液之顯像使其除去後,將絕緣樹脂層207進行製 圖至基板203的連接端子露出而形成開口 213 (圖25)。 φ 且,可取代負型使用正型之感光性接著劑,此時絕緣樹脂 層207中經曝光的部分藉由顯像而除去。 於所得之光阻圖型的開口 213塡充導電材,形成導電 層209 (圖26 )。導電材的塡充方法可採用照相凹版印刷 、藉由輥之壓入法、減壓塡充等各種方法。其此所使用的 導電材可舉出焊接、金、銀、鎳、銅、鉑、鈀或氧化釕等 金屬、或金屬氧化物等所成之電極材料、上述金屬之凸塊 以外,例如可舉出至少含有導電性粒子與樹脂成分所成者 • 。作爲前述導電性粒子,例如可使用金、銀、鎳、銅、鉑 、鈀或氧化釕等金屬或金屬氧化物、或有機金屬化合物等 導電性粒子。又,作爲樹脂成分,例如可使用環氧樹脂及 其硬化劑等上述硬化性樹脂組成物 對於基板203上之絕緣樹脂層207,可直接接著半導 體晶片205。半導體晶片20 5的連接用電極部介著導電層 2 09與基板203之連接端子以電氣連接。且,半導體晶片 205中之與絕緣樹脂層207爲反側的電路面上,可形成經 圖型化之絕緣樹脂層(緩衝液外套膜)。 -41 - 201013854 半導體晶片205之接著,例如藉由加熱至感光性接著 劑表示流動性之溫度下進行熱壓著之方法而進行。此時將 薄膜狀感光性接著劑進行水分量調整處理後,可得到具有 耐熱性之半導體裝置。熱壓著後,視必要加熱絕緣樹脂層 207使其進一步進行硬化。 於半導體晶片205中之與絕緣樹脂層207爲反側的電 路面(裏面)貼合裏面保護薄膜者爲佳。 藉由以上,得到具有圖21所示構成之半導體裝置201 。半導體裝置之製造方法並非限定於以上說明之實施形態 者,不脫離本發明之要旨下可適宜變更。 例如,感光性接著劑並非限定於最初設置於基板203 上者,亦可最初設置於半導體晶片205上。此時,半導體 裝置之製造方法爲,例如具備於具有連接用電極部之半導 體晶片205上設置由感光性接著劑所成之絕緣樹脂層207 的第1步驟、藉由將絕緣樹脂層207進行曝光及顯像,形 成爲露出連接用電極部的開口 213而製圖之第2步驟、與 於開口 213塡充導電材的形成導電層209之第3步驟、與 將具有連接端子之基板2 03直接接著於半導體晶片205與 絕緣樹脂層207之層合體的絕緣樹脂層207之同時’將基 板203之連接端子與半導體晶片205的連接用電極部介著 導電層209以電氣連接的第4步驟。 上述製造方法中’因各個片化之基板203及半導體晶 片20 5間之連接,基板2 03上之連接端子與半導體晶片 205上之連接用電極部的連接容易進行故較佳。 201013854 又,感光性接著劑可最初設置於複數半導體晶片205 所構成之半導體晶圓上。此時,半導體裝置之製造方法, 例如具備具有連接用電極部的複數半導體晶片205所構成 之半導體晶圓217上設有感光性接著劑所成之絕緣樹脂層 2 07的第1步驟(圖7)、與藉由將絕緣樹脂層207進行 曝光及顯像,形成如露出連接用電極部的開口 213下進行 製圖的第2步驟、與於開口 213塡充導電材而形成導電層 φ 209之第3步驟、與將具有連接端子之晶圓尺寸基板(具 有與半導體晶圓相同程度尺寸之基板)203直接接著於半 導體晶圓217與絕緣樹脂層207之層合體的絕緣樹脂層 .207之同時,與構成基板203之連接端子與半導體晶圓 217的半導體晶片205之連接用電極部介著導電層209以 電氣連接之第4步驟、與將半導體晶圓217與絕緣樹脂層 207與基板203之層合體切分成(切割)半導體晶片205 之第5步驟。 參 又,上述製造方法爲第1步驟中,於晶圓尺寸之基板 203上設置由感光性接著劑所成之絕緣樹脂層207,於第4 步驟中,將半導體晶圓217直接接著於基板203與絕緣樹 脂層207之層合體的絕緣樹脂層207的同時,與構成基板 203之連接端子與半導體晶圓217之半導體晶片205的連 接用電極部介著導電層2 09以電氣連接的第5步驟中,可 將半導體晶圓217與絕緣樹脂層207與基板203之層合體 切分爲半導體晶片205。 上述製造方法中’將半導體晶圓217與基板203之連 -43- 201013854 接爲止之步驟(第4步驟)可於晶圓尺寸下即可完成,故 於作業效率的觀點上來看爲佳。且,半導體晶圓217中之 與絕緣樹脂層207爲反側之電路面(裏面)上,貼合裏面 保護薄膜者爲佳。 又,其他半導體裝置之製造方法爲,具備於具有連接 用電極部之複數半導體晶片205所構成之半導體晶圓217 上設有感光性接著劑所成之絕緣樹脂層207的第1步驟、 與藉由將絕緣樹脂層207進行曝光及顯像,形成爲露出連 @ 接用電極部之開口 213下進行製圖之第2步驟、與於開口 213塡充導電材而形成導電層209之第3步驟、與將半導 體晶圓217與絕緣樹脂層207之層合體切分成(切割)各 半導體晶片20 5之第4步驟、與將具有連接端子之基板 203直接接著於經個片化之半導體晶片205與絕緣樹脂層 2 07之層合體的絕緣樹脂層207之同時,將基板203之連 接端子與半導體晶片205之連接用電極部介著導電層209 以電氣連接之第5步驟。 . 又,上述製造方法之第1步驟中,於晶圓尺寸之基板 2 03上設有由感光性接著劑所成之絕緣樹脂層207,於第4 步驟中,將晶圓尺寸的基板203與絕緣樹脂層207之層合 體切分成各半導體晶片205,第5步驟中,將半導體晶片 205直接接著於經個片化之基板203與絕緣樹脂層207之 層合體的絕緣樹脂層207之同時,亦可將基板203之連接 端子與半導體晶片205之連接用電極部介著導電層209以 電氣連接。 -44- 201013854 上述製造方法中’自感光性接著劑之形成 塡充步驟(第3的步驟)爲止皆以晶圓尺寸下 可順利進行切割步驟(第4步驟)故較佳。 又,使用感光性接著劑’藉由接著半導體 半導體晶片彼此可構成半導體層合體。於該層 貫通電極。 此時,半導體裝置之製造方法爲,例如具 Φ 通電極之連接用電極部的第1半導體晶片205 光性接著劑所成之絕緣樹脂層207的第1步驟 絕緣樹脂層207進行曝光及顯像,形成爲露出 電極部之開口 213而進行製圖之第2步驟、與 塡充導電材而形成貫通電極連接之第3步驟、 接用電極部之第2半導體晶片205直接接著於 晶片205與絕緣樹脂層207之層合體的絕緣樹 同時,將第1及第2半導體晶片205的連接用 ® 介著導電層209以電氣連接之第4步驟。上述 ,取代半導體晶片可使用半導體晶圓。 且’上述電子零件一般爲經由將接著劑進 化步驟及焊接迴流步驟而製造。 【實施方式】 [實施例] 以下’依據實施例及比較例對本發明作更 但本發明並未受到以下實施例之限制。 至導電材之 進行,又因 晶圓彼此或 合體可形成 備於具有貫 上設有由感 、與藉由將 上述連接用 於開口 213 與將具有連 第1半導體 脂層207之 電極部彼此 製造方法中 行硬化之硬 具體說明, -45- 201013854 (聚醯亞胺PI-1之合成) 於具備攪拌機、溫度計及氮氣取代裝置之燒瓶内,裝 入5,5·-伸甲基-雙(胺茴酸)(分子量286.3,以下稱爲「 MBAA」)3.43g、脂肪族醚二胺(BASF公司製、「D-400 」(商品名)、分子量452.4) 31.68、1,1,3,3-四甲基-1,3 -雙(4 -胺基苯基)二砂氧院(T〇ray.d〇wc〇rning砍氧 烷製、「BY16-871EG」(商品名)分子量248.5) 2.48g _ 及N-甲基-2-吡咯烷酮(以下稱爲NMP) 105g。 其次,將4,4、氧基二苯二酸二酐(分子量326.3,以 下稱爲「ODPA」)32.6g於燒瓶中以冰浴進行冷卻下,於 上述燒瓶内中徐徐少量添加。添加終了後,進一步於室溫 下進行5小時攪拌。 其次,於該燒瓶上裝上附有水分受容器的迴流冷卻器 ’加入伸二甲苯基70g,一邊衝入氮氣,一邊昇溫至 1 80°c,且於該溫度下保持5小時,以共沸除去方式與水 © 同時除去伸二甲苯基。如此得到聚醯亞胺(以下稱爲「聚 醯亞胺PI-1」)。 將所得之聚醯亞胺PI-1的重量平均分子量(Mw)藉 由GPC進行測定結果,以聚苯乙烯換算下Mw= 3 1 000。 又,所得之聚醯亞胺PI-1的Tg爲55t。 (聚醯亞胺PI-2之合成) 於具備攪拌機、溫度計及氮氣取代裝置之燒瓶内,裝 -46- 201013854 人 MBAA2.86g、D-400、14.0g、BYl 6-871EG 二胺(BASF公司製,「B-12」(商品名),夕 )8.17g 及 NMP1 10g。 其次,將ODPA32.6g於燒瓶中以冰浴進 於上述燒瓶内徐徐少量添加。添加終了後,進 中進行5小時攪拌。 其次,於該燒瓶裝上附有水分受容器之迴 ❹ 加入伸二甲苯基73g,一邊吹入氮氣,一邊升 ,於該溫度下保持5小時,以共沸除去方式與 伸二甲苯基。如此得到聚醯亞胺(以下稱爲 PI-2」)。 將所得之聚醯亞胺PI-2的重量平均分子j 由GPC進行測定結果,以聚苯乙烯換算下Mw
又,所得之聚醯亞胺PI-2的Tg爲60°C • (聚醯亞胺PI-3之合成) 於具備攪拌機、溫度計及氮氣取代裝置之 入2,2·雙(3-胺基-4-羥基苯基)六氟丙烷(分 ,以下稱爲「BIS-AP-AF」)14_65g、脂肪ί BASF公司製、「D-400」(商品名)、分子 18.09g、1,1,3,3-四甲基-1,3-雙(4-胺基苯基) Toray.dowcorning 矽氧烷製、「BY16-871EG )分子量248.5 ) 2.48g及N-甲基-2-吡咯烷酮 NMP ) 1 05g。 、2.48g、醚 卜子量204.3 行冷卻下, 一步於室溫 流冷卻器, 溫至 1 8 0 °C 水同時除去 「聚醯亞胺 | ( Mw)藉 =28000 〇 燒瓶内,裝 子量3 66.26 矣醚二胺( 量 452.4) 二矽氧烷( 」(商品名 (以下稱爲 -47- 201013854 其次,將4,4·-氧基二苯二酸二酐(分子量326.3,以 下稱爲「ODPA」)32.6g於燒瓶中以冰浴進行冷卻下,於 上述燒瓶内徐徐少量添加。添加終了後,進一步於室溫中 進行5小時攪拌。 其次,於該燒瓶裝上附有水分受容器之迴流冷卻器, 加入伸二甲苯基70g,一邊吹入氮氣,一邊升溫至1 80°C ,於該溫度下保持5小時,以共沸除去方式與水同時除去 伸二甲苯基。如此得到聚醯亞胺(以下稱爲「聚醯亞胺 PI-3」)。 將所得之聚醯亞胺PI-3的重量平均分子量(Mw)藉 由GPC進行測定結果,以聚苯乙烯換算下Mw=33000。 又,所得之聚醯亞胺PI-3的Tg爲75°C。 (聚醯亞胺PI-4之合成)
於附有溫度計、攪拌機、冷卻管、及氮流入管的300mL 燒瓶中,加入 D-400 27.1g ( 0.06mol ) 、BY16-871EG 2.48g ( O.Olmol ) 、MBAA 8.58g(0.03mol)及 N-甲基-2-吡咯烷酮(NMP ) 113g,攪拌反應液。溶解二胺後,將 ODPA 3 2.62g ( O.lmol )及偏苯三酸酐(分子量192.1,以 下簡稱爲TAA ) 5.76g ( 0.03mol )徐徐少量添加。室溫下 進行8小時攪拌後,加入伸二甲苯基75.5g,一邊吹入氮 氣,一邊以180°C加熱,共沸除去方式與水同時將伸二甲 苯基除去,得到聚醯亞胺樹脂(PI-4)之清漆。 將所得之聚醯亞胺PI-4的重量平均分子量(Mw)藉 -48- 201013854 由GPC進行測定結果,以聚苯乙烯換算下Mw= 25000。 又,所得之聚醯亞胺PI-4的Tg爲70°C。 (清漆之調製) 將聚醯亞胺、放射線聚合性化合物、光聚合啓始劑、 環氧樹脂、硬化劑、塡充物及塗佈溶劑以表1、2所示調 配比率進行調配,調製出清漆F-01〜F-0 5。 參 [表1] 項目 F-01 F-02 F-03 聚醯亞胺(1〇〇質量份) PI-1 PI-1 PI-2 ΒΡΕ-100 40 放射線聚合性化合物 U-2PPA 40 40 40 Μ-313 40 40 薄 光聚合啓始劑 1-819 3 1 2 膜 Ι-ΟΧΕ02 0.5 1 組 環氧樹脂 VG-3101 5 5 5 成 YDF-8170 10 10 10 硬化劑 TrisP-PA 5 5 5 塡充物 R972 5 10 10 塗佈溶劑 NMP 200 200 200 -49- 201013854 [表2] 項目 F-04 F-05 聚醯亞胺(100質量份) PI-3 PI-4 放射線聚合性化合物 ΒΡΕ-100 40 Μ-313 80 30 環氧樹脂 YDF-8170 30 15 ΕΑ-1010ΝΤ 20 20 硬化劑 TrisP-PA 20 10 塡充劑 R-972 5 10 光聚合啓始劑 1-819 2 2 I-OXE02 1 1 熱自由基產生劑 pug-millD 1 2 塗佈溶劑 NMP 200 200 且,於表1、2中,種種記號如下述所示意義。 • ΒΡΕ-100 :新中村化學製、乙氧基化雙酚A二甲基 丙烯酸酯 • U-2PPA :新中村化學製、尿烷丙烯酸酯 • M-313:東亞合成(股)製、三聚異氰酸E◦變性 二及三丙烯酸酯 • 1-819· C i b a Specialty Chemicals 製、雙(2,4,6-三 甲基苯甲醯基)-苯基膦氧化物 • I-OXE02: Ciba Specialty Chemicals 製、乙酮,1-〔 9-乙基-6- ( 2-甲基苯甲醯基)-9H-咔唑-3-基〕-,1- ( Ο-乙 醯肟)、肟酯基含有化合物 .VG3101 : Printech製、3官能環氧樹脂 .YDF-8170:東都化成製、雙酚F型環氧樹脂 -50- 201013854 .TrisP-PA:本州化學製、參酣化合物(α,α,α'_參( 4-羥基酚)-卜乙基-4-異丙基苯) .R972 :日本 Aerosil 製、疏水性燻砂(fumed silica )(平均粒徑:約1 6nm ) • pug-millD:日油製、二枯嫌基過氧化物(1分鐘半 衰期溫度:175°C ) • EA-1010NT :新中村化學、雙A型丙烯酸變性單官 φ 能環氧樹脂 • NMP:關東化學、N-甲基-2-吡咯烷酮 (實施例1〜7及比較例1〜3 ) 將上述清漆各塗佈於基材(剝離劑處理PET )上至 50μιη厚度,於烤箱中進行8(TC,30分鐘,繼續i2〇°C, 30分鐘之加熱,得到附有基材之薄膜狀接著劑。 其次,以下述所示條件下,進行實施例1〜7及比較 例1〜3之薄膜狀接著劑的特性評估。其結果如表3〜5所 示0 於透明PET基材上所形成之厚度50μιη的薄膜狀感光 性接著劑上,且將作爲覆蓋薄膜貼合透明PET薄膜的接著 薄片切成150mmxl50mm之尺寸。切出之接著薄片上載持 光罩,使用高精度平行曝光機(OAK製作所製)以曝光量 :1000mJ/cm2之條件下,經曝光(照射紫外線),於80°C 加熱30秒。其後,剝開單側PET薄膜,使用Yako製噴 霧顯像機進行顯像(顯像液:四甲基銨鹵化物(TMAH ) -51 - 201013854 2.38% 27°C噴霧壓 〇.18MPa,水洗:純水 23°C及噴霧壓 0.02MPa )。 於另一單側之PET基材形成圖型,其後將附著於薄膜 之TMAH進行6分鐘的純水洗淨。其後,室溫下放置30 分鐘,剝開PET基材,使用平沼產業製水分測定裝置「 AQV2 100CT」,測定經圖型化之薄膜狀感光性接著劑的水 分量。 且,於圖型化後作爲水分量調整處理進行加熱處理時 ,將所得之樣品置於聚氟化伸乙基系纖維薄片等上,將各 聚氟化伸乙基系纖維薄片載持於熱板上,進行所定溫度及 時間之加熱。 (熱壓著後之熱過程安定性) 將附有基材的薄膜狀感光性接著劑於6英吋徑,厚度 4 00μιη的矽晶圓上,使用層合裝置,貼合溫度:80°C ’線 壓:4kgf/cm及輸送速度:0.5m/分鐘的條件下進行貼合。 @ 其次,於附有基材的薄膜狀感光性接著劑之PET基材 側上載持負型圖型用光罩,以高精度平行曝光機(OAK製 作所製:EXM-1172-B-oo)於曝光量:1 000mJ/cm2之條件 下進行曝光(照射紫外線),再於80°C,30秒的條件下 進行加熱處理。其後,玻璃基材,使用輸送顯像機(Yak0 製),藉由噴霧顯像處理(顯像液:四甲基敍鹵化物( TMAH) 2.38% 27°C 噴霧壓 0.18 MPa、水洗:純水 23°C ’ 噴霧壓0.02MPa)使薄膜狀感光性接著劑進行圖型化。 -52- 201013854 顯像後將附著TMAH以純水進行6分鐘洗淨後,室溫 下放置3 0分鐘後,視必要進行放置時間之延長或吸濕處 理,經圖型化後以所定條件下進行水分量調整處理。 於加熱乾燥後,馬上將30mmx30mmx厚度0.35mm之 玻璃載持於經圖型化之薄膜狀感光性接著劑上,使用大橋 製作所製flat tool熱壓著裝置OH-105ATF,以壓著溫度: 15 0°C,壓著荷重:〇.5MPa及壓著時間:10分鐘之條件下 • 進行加熱壓著。 將所得之樣品以烤箱中進行160°C3小時及180°C3小 時之條件下的加熱硬化。其後,以260 °C之熱板上進行加 熱,測定產生玻璃/接著劑界面剝離或發泡所引起的結著 爲止之時間。260 °C加熱後馬上剝離或發泡時爲NG。 [表3] 項目 實施例1 實施例2 實施例3 實施例4 實施例5 薄膜 F-01 F-02 F-03 F-01 F-01 顯像後之放置條 件或吸濕條件 4rrr m Arrc. m 4ml m 160〇C/1〇 分+ 室溫放置24h 160°C/l〇 分+ 30〇C/90%RH24h 圖型化後水分量 調整處理條件 160°C/10 分 200oC/l 分 180°C/3 分 120°C/3 分 120〇C/3 分 水分量(重量%) 0.5 0.3 0.4 0.6 0.5 熱壓著後之熱 過程安定性 300秒 >1000 秒 >1000秒 300秒 300秒 -53- 201013854 [表4] 項目 實施例6 實施例7 薄膜 F-04 F-05 顯像後之放置條件或吸濕條件 室溫放置24h 室溫放置24h 圖型化後水分量調整處理條件 160°C/l〇 分 160°C/10 分 水分量(重量%) 0.2 0.6 熱壓著後之熱過程安定性 >1000 >1000 [表5]
項目 比較例2 比較例2 比較例3 薄膜 F-01 F-02 F-03 顯像後之放置條件或吸濕條件 Μ j \ 160°C/l〇 分+ 室溫放置24h 160°C/10 分+30 〇C/90%RH24h 圖型化後水分量調整處理條件 jfnt Μ Arr 那 Μ J\S\ 水分量(重量%) 1.2 1.1 1.1 熱壓著後之熱過程安定性 NG NG MG 如表3〜5所得,實施例1〜7與比較例1〜3比較下 具有優良之熱壓著後熱過程安定性(耐熱性)。 【圖式簡單說明】 [圖Π表示半導體裝置之製造方法的一實施形態之端 面圖。 [圖2]表示半導體裝置之製造方法的一實施形態之端 面圖。 [圖3]表示半導體裝置之製造方法的一實施形態之平 面圖。 [圖4]表示半導體裝置之製造方法的一實施形態之平 -54- 201013854 面圖。 [圖5]表示半導體裝置之製造方法的一實施形態之平 面圖。 [圖6]表示半導體裝置之製造方法的一實施形態之平 面圖。 [圖7]表示半導體裝置之製造方法的一實施形態之平 面圖。 Φ [圖8]表示附有接著劑層之半導體晶圓的一實施形態 之端面圖。 [圖9]表示接著劑圖型之一實施形態的上面圖。 [圖10]表示沿著圖9之VI-VI線的端面圖。 [圖11]表示接著劑圖型之一實施形態的上面圖。 [圖12]表示沿著圖11之VIII-VIII線的端面圖。 [圖13]表示介著接著劑圖型於半導體晶圓上接著蓋玻 璃狀態的上面圖。 m 胃 [圖14]表示沿著圖13之X-X線的端面圖。 [圖15]表示介著接著劑圖型於半導體晶圓上接著蓋玻 璃狀態的上面圖。 [圖16]表示沿著圖15之XII-XII線的端面圖。 [圖17]表示半導體裝置之一實施形態的端面圖。 [圖18]表示半導體裝置之一實施形態的端面圖。 [圖19]表示CCD照相機組件之一實施形態的截面圖。 [圖20]表示CCD照相機組件之一實施形態的截面圖 -55- 201013854 [圖21]表示半導體裝置之一實施形態的截面圖。 [圖22]表示半導體裝置的製造方法之一實施形態的截 面圖。 [圖23]表示半導體裝置的製造方法之一實施形態的截 面圖。 [圖24]表示半導體裝置的製造方法之一實施形態的截 面圖。 [圖25]表示半導體裝置的製造方法之一實施形態的截 面圖。 [圖26]表示半導體裝置的製造方法之一實施形態的截 面圖。 【主要元件符號說明】 1:薄膜狀感光性接著劑(接著薄膜) 2 :半導體晶圓 3,215 :光罩 5 :複合薄膜 7 :支持基材 9 :蓋玻璃 1 1 :開口 20,21 :半導體元件 2 5 :電路面 3 0 :粒接合薄膜 40 :切割薄膜 -56- 201013854 60 :封止樹脂層 8 0,8 1 :線圈 90 :切割線 1 00,1 3 0a,130b,201:半導體裝置 1 〇 1 :接著劑層 1 0 1 a :接著劑圖型 1 0 1 b :接著劑圖型 Φ 107:有效畫素區域 109 :蓋玻璃 1 1 1 :黏晶(Die Bond )薄膜 1 1 2 :線圈 115:半導體元件搭載用支持基材 1 1 6 :側壁 1 1 7 :鑲入用構件 1 20 ‘·附有接著劑層之半導體晶圓 參 140 :鏡片 150a,150b : CCD照相機組件 203 :基板 205 :半導體晶片 2 0 7 :絕緣樹脂層 209 :導電層 2 1 1 :電路面 2 1 3 :開口 2 1 7 :半導體晶圓 -57
Claims (1)
- 201013854 七、申請專利範園: 1·一種半導體裝置,其爲半導體元件與被接著體介著 經Η型化的薄膜狀感光性接著劑進行熱壓著所成之半導體 裝置,其特徵爲 前述經圖型化之薄膜狀感光性接著劑的熱壓著前之水 分量爲1 · 0重量%以下。 2. 如申請專利範圍第1項之半導體裝置,其中前述被 接著體爲半導體元件或保護玻璃。 3. 如申請專利範圍第1項或第2項之半導體裝置,其 中前述薄膜狀感光性接著劑至少含有(Α)熱塑性樹脂及 (Β )熱硬化性樹脂。 4. 如申請專利範圍第3項之半導體裝置,其中前述薄 膜狀感光性接著劑更含有(C )放射線聚合性化合物及(D )光啓始劑。 5. 如申請專利範圍第3項或第4項之半導體裝置,其 中前述(A )熱塑性樹脂爲鹼可溶性樹脂。 6. 如申請專利範圍第5項之半導體裝置,其中前述鹼 可溶性樹脂爲於分子中具有羧基及/或羥基之聚醯亞胺樹 脂。 7. 如申請專利範圍第3項之半導體裝置,其中前述( B)熱硬化性樹脂爲環氧樹脂。 8. 如申請專利範圍第1項至第7項中任一項之半導體 裝置,其中前述經圖型化之薄膜狀感光性接著劑係經由 將薄膜狀感光性接著劑所成之接著劑層形成於被接著 -58- 201013854 體上的接著劑層形成步驟、 將該接著劑層以所定圖型進行曝光之曝光步驟、 將曝光後之接著劑層藉由鹼性水溶液進行顯像的顯像 步驟、及 調整顯像後之接著劑層的水分量之水分量調整步驟所 形成。 9. 一種半導體裝置的製造方法,其爲具備將設置於半 • 導體元件之電路面上的薄膜狀感光性接著劑藉由曝光及顯 像進行圖型化的圖型化步驟、調整經圖型化之前述感光性 接著劑的水分量之水分量調整步驟、與將被接著體藉由熱 壓著使其直接接著於經圖型化的前述感光性接著劑的熱壓 著步驟者,其特徵爲 於前述水分量調整步驟,進行水分量調整處理’使得 於PET基材上形成圖型之薄膜狀感光性接著劑之形成圖型 後之水分量在1 . 〇重量%以下。 10. 如申請專利範圍第9項之半導體裝置的製造方法 ,其中前述被接著體爲半導體元件或保護玻璃。 11. 如申請專利範圍第9項或第10項之半導體裝置的 製造方法,其中前述水分量調整處理爲加熱處理。 12. 如申請專利範圍第9項至第11項中任一項之半導 體裝置的製造方法,其中前述薄膜狀感光性接著劑至少含 有(A)熱塑性樹脂及(B )熱硬化性樹脂。 13. 如申請專利範圍第12項之半導體裝置的製造方法 ,其中前述薄膜狀感光性接著劑更含有(C)放射線聚合 -59- 201013854 性化合物及(D)光啓始劑。 14. 如申請專利範圍第12項或第13項之半導體裝置 的製造方法,其中前述(A)熱塑性樹脂爲鹸可溶性樹脂 〇 15. 如申請專利範圍第14項之半導體裝置的製造方法 ’其中前述鹼可溶性樹脂爲於分子中具有羧基及/或羥基 之聚醯亞胺樹脂。 16. 如申請專利範圍第12項之半導體裝置的製造方法 ’其中前述(B)熱硬化性樹脂爲環氧樹脂。 # 17· —種半導體裝置’其特徵爲如申請專利範圍第$ 項至第16項中任一項之製造方法所製造者。 -60-
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KR (1) | KR20110055683A (zh) |
CN (1) | CN102160163A (zh) |
TW (1) | TW201013854A (zh) |
WO (1) | WO2010032529A1 (zh) |
Families Citing this family (6)
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KR20120080385A (ko) * | 2011-01-07 | 2012-07-17 | 삼성전자주식회사 | 패턴 형성용 접착 필름 조성물, 이를 포함하는 접착 필름 및 이를 이용한 반도체 패키징 방법 |
JP5871771B2 (ja) * | 2012-10-26 | 2016-03-01 | 東京応化工業株式会社 | ポジ型感光性樹脂組成物、ポリイミド樹脂パターンの形成方法、及びパターン化されたポリイミド樹脂膜 |
US9418974B2 (en) | 2014-04-29 | 2016-08-16 | Micron Technology, Inc. | Stacked semiconductor die assemblies with support members and associated systems and methods |
WO2015190210A1 (ja) * | 2014-06-12 | 2015-12-17 | 太陽インキ製造株式会社 | 硬化性樹脂組成物、ドライフィルム、硬化物およびプリント配線板 |
JP6961342B2 (ja) * | 2016-12-27 | 2021-11-05 | サムスン エレクトロニクス カンパニー リミテッド | ポリイミド樹脂およびポジ型感光性樹脂組成物 |
KR102522749B1 (ko) * | 2017-11-06 | 2023-04-17 | 아사히 가세이 가부시키가이샤 | 감광성 수지 적층체 및 레지스트 패턴의 제조 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05152355A (ja) * | 1991-11-25 | 1993-06-18 | Nitto Denko Corp | 半導体装置 |
US6717242B2 (en) * | 1995-07-06 | 2004-04-06 | Hitachi Chemical Company, Ltd. | Semiconductor device and process for fabrication thereof |
TW310481B (zh) * | 1995-07-06 | 1997-07-11 | Hitachi Chemical Co Ltd | |
JP5157255B2 (ja) * | 2006-09-05 | 2013-03-06 | 日立化成株式会社 | 感光性接着剤組成物、及びそれを用いた接着フィルム、接着シート、接着剤パターン、並びに半導体装置 |
JP5458538B2 (ja) * | 2007-12-12 | 2014-04-02 | 日立化成株式会社 | 半導体装置及びその製造方法 |
-
2009
- 2009-06-25 CN CN2009801370978A patent/CN102160163A/zh active Pending
- 2009-06-25 WO PCT/JP2009/061596 patent/WO2010032529A1/ja active Application Filing
- 2009-06-25 KR KR1020117006422A patent/KR20110055683A/ko not_active Application Discontinuation
- 2009-06-26 TW TW098121638A patent/TW201013854A/zh unknown
Also Published As
Publication number | Publication date |
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CN102160163A (zh) | 2011-08-17 |
WO2010032529A1 (ja) | 2010-03-25 |
KR20110055683A (ko) | 2011-05-25 |
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