WO2010032529A1 - Dispositif à semi-conducteurs et son procédé de fabrication - Google Patents

Dispositif à semi-conducteurs et son procédé de fabrication Download PDF

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Publication number
WO2010032529A1
WO2010032529A1 PCT/JP2009/061596 JP2009061596W WO2010032529A1 WO 2010032529 A1 WO2010032529 A1 WO 2010032529A1 JP 2009061596 W JP2009061596 W JP 2009061596W WO 2010032529 A1 WO2010032529 A1 WO 2010032529A1
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WIPO (PCT)
Prior art keywords
semiconductor device
film
photosensitive adhesive
adhesive
manufacturing
Prior art date
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PCT/JP2009/061596
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English (en)
Japanese (ja)
Inventor
崇司 川守
一行 満倉
増子　崇
加藤木　茂樹
Original Assignee
日立化成工業株式会社
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Priority claimed from JP2008242765A external-priority patent/JP5458538B2/ja
Application filed by 日立化成工業株式会社 filed Critical 日立化成工業株式会社
Priority to US13/120,191 priority Critical patent/US20110223397A1/en
Priority to CN2009801370978A priority patent/CN102160163A/zh
Publication of WO2010032529A1 publication Critical patent/WO2010032529A1/fr

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • C08G73/1082—Partially aromatic polyimides wholly aromatic in the tetracarboxylic moiety
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    • C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
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Definitions

  • the present invention relates to a semiconductor device and a manufacturing method thereof.
  • semiconductor devices having various forms have been proposed along with the enhancement of performance and functionality of electronic components.
  • a semiconductor device in order to bond and fix the semiconductor element and the support base (adhered body) for mounting the semiconductor element, in addition to low stress, low temperature adhesiveness, moisture resistance reliability, solder reflow resistance, etc.
  • a film-like photosensitive adhesive having photosensitivity capable of patterning for the purpose of simplifying the function, form and assembly process of the semiconductor device is preferably used.
  • Photosensitivity is a function that chemically changes the part irradiated with light and insolubilizes or solubilizes in an alkaline aqueous solution or an organic solvent.
  • this photosensitive photosensitive film adhesive is used, it is exposed through a photomask and processed with a developer to form a pattern, through which a semiconductor element and a support substrate for mounting a semiconductor element are formed.
  • a semiconductor device in which a high-definition adhesive pattern is formed can be obtained by thermocompression bonding (see, for example, Patent Document 1).
  • thermocompression bonding failure can occur by the following mechanism.
  • the film-like photosensitive adhesive since the film-like photosensitive adhesive is designed to be soluble in an alkaline aqueous solution or an organic solvent, it has a relatively high moisture absorption rate or water absorption rate, and easily absorbs moisture during storage or during the assembly process of a semiconductor device. .
  • This moisture that has absorbed moisture causes foaming due to vaporization and expansion during thermocompression bonding between the semiconductor element and the semiconductor element mounting support substrate, and this causes a thermocompression-bonding failure.
  • the heat resistance of the semiconductor device may be lowered due to the voids in the adhesive generated by the above-described foaming.
  • an object of the present invention is to provide a semiconductor device having excellent heat resistance, and a method for manufacturing a semiconductor device that can manufacture such a semiconductor device and that is less likely to cause defects such as a thermocompression bonding failure. .
  • the present invention is a semiconductor device in which a semiconductor element and an adherend are thermocompression bonded through a patterned film-like photosensitive adhesive, and the thermocompression bonding of the patterned film-like photosensitive adhesive
  • a semiconductor device having a moisture content of 1.0% by weight or less immediately before. Such a semiconductor device is excellent in heat resistance.
  • the present inventors consider as follows. That is, in order to manufacture an electronic component from a semiconductor device, it is usually necessary to go through a curing process for curing the adhesive and a solder reflow process. In these processes, high-temperature processing is required. In the semiconductor device of the present invention, by setting the moisture amount to a predetermined value or less, it is possible to prevent peeling of the adhesive layer due to vaporization, expansion, etc. caused by exposure of moisture to a high temperature, and thus excellent heat resistance. it is conceivable that.
  • the adherend is preferably a semiconductor element or a protective glass.
  • the film-like photosensitive adhesive preferably contains at least (A) a thermoplastic resin and (B) a thermosetting resin, and further contains (C) a radiation polymerizable compound and (D) a photoinitiator. Is preferred.
  • the (A) thermoplastic resin is preferably an alkali-soluble resin.
  • the alkali-soluble resin is preferably a polyimide resin having a carboxyl group and / or a hydroxyl group in the molecule from the viewpoint of particularly excellent developability and heat resistance.
  • thermosetting resin is preferably an epoxy resin from the viewpoint that it can have an excellent adhesive force at high temperatures.
  • the patterned film-like photosensitive adhesive comprises an adhesive layer forming step of forming an adhesive layer made of a film-like photosensitive adhesive on an adherend (preferably a semiconductor wafer), the adhesive layer, It is preferably formed through an exposure step of exposing with a predetermined pattern, a development step of developing the exposed adhesive layer with an alkaline aqueous solution, and a moisture amount adjusting step of adjusting the moisture amount of the adhesive layer after development. .
  • the present invention also provides a patterning process for patterning a film-like photosensitive adhesive provided on a circuit surface of a semiconductor element by exposure and development, and moisture for adjusting the moisture content of the patterned photosensitive adhesive.
  • a method for manufacturing a semiconductor device comprising: an amount adjusting step; and a thermocompression bonding step in which the adherend is directly bonded to the patterned photosensitive adhesive by thermocompression bonding.
  • a semiconductor device is provided.
  • the adherend is preferably a semiconductor element or a protective glass.
  • the water content adjustment process is preferably a heat treatment.
  • the heat treatment can be performed, for example, under conditions of 80 to 200 ° C. and 5 seconds to 30 minutes.
  • the film-like photosensitive adhesive preferably contains at least (A) a thermoplastic resin and (B) a thermosetting resin, and further contains (C) a radiation polymerizable compound and (D) a photoinitiator. Is preferred.
  • the (A) thermoplastic resin is preferably an alkali-soluble resin.
  • the alkali-soluble resin is preferably a polyimide resin having a carboxyl group and / or a hydroxyl group in the molecule from the viewpoint of particularly excellent developability and heat resistance.
  • thermosetting resin is preferably an epoxy resin from the viewpoint that it can have an excellent adhesive force at high temperatures.
  • the present invention it is possible to provide a semiconductor device having excellent heat resistance, and a method for manufacturing a semiconductor device that can manufacture such a semiconductor device and is less likely to cause defects such as defective thermocompression bonding.
  • FIG. 10 is an end view taken along line VI-VI in FIG. 9. It is a top view which shows one Embodiment of an adhesive agent pattern.
  • FIG. 13 is an end view taken along line VIII-VIII in FIG. 11. It is a top view which shows the state by which the cover glass was adhere
  • FIG. 14 is an end view taken along line XX in FIG. 13. It is a top view which shows the state by which the cover glass was adhere
  • FIG. 16 is an end view taken along line XII-XII in FIG. 15. 1 is an end view showing an embodiment of a semiconductor device.
  • FIG. 1 is an end view showing an embodiment of a semiconductor device. It is sectional drawing which shows one Embodiment of a CCD camera module. It is sectional drawing which shows one Embodiment of a CCD camera module. It is sectional drawing which shows one Embodiment of a semiconductor device. It is sectional drawing which shows one Embodiment of the manufacturing method of a semiconductor device. It is sectional drawing which shows one Embodiment of the manufacturing method of a semiconductor device. It is sectional drawing which shows one Embodiment of the manufacturing method of a semiconductor device. It is sectional drawing which shows one Embodiment of the manufacturing method of a semiconductor device. It is sectional drawing which shows one Embodiment of the manufacturing method of a semiconductor device. It is sectional drawing which shows one Embodiment of the manufacturing method of a semiconductor device. It is sectional drawing which shows one Embodiment of the manufacturing method of a semiconductor device. It is sectional drawing which shows one Embodiment of the manufacturing method of a semiconductor device.
  • the semiconductor device of the present invention is a semiconductor device in which a semiconductor element and an adherend are thermocompression bonded via a patterned film-like photosensitive adhesive, and the patterned film-like photosensitive adhesive
  • the water content immediately before thermocompression bonding is 1.0% by weight or less.
  • the method for manufacturing a semiconductor device of the present invention includes a patterning step of patterning a film-like photosensitive adhesive provided on a circuit surface of a semiconductor element by exposure and development, and the patterned photosensitive adhesive.
  • a method for manufacturing a semiconductor device comprising: a moisture content adjusting step for adjusting the moisture content of the substrate; and a thermocompression bonding step in which the adherend is directly bonded to the patterned photosensitive adhesive by thermocompression bonding.
  • a moisture content adjusting process is performed in which the moisture content after pattern formation of the film-like photosensitive adhesive patterned on the PET substrate is 1.0% by weight or less.
  • the moisture adjustment treatment is more preferably a treatment for adjusting the moisture content after pattern formation of the film-like photosensitive adhesive patterned on the PET base material to 0.7% by weight or less, and 0.5% by weight. More preferably, the treatment is as follows.
  • the moisture remaining in the film-like photosensitive adhesive may cause foaming due to vaporization and expansion of moisture during thermocompression bonding between the semiconductor element and the adherend.
  • the manufacture of the semiconductor device may be hindered, such as peeling of the manufactured semiconductor element or protective glass.
  • the remaining moisture is exposed to a high temperature in the curing process / solder reflow process, it causes peeling of the adhesive and the adherend due to vaporization / expansion.
  • the moisture content of the patterned film-like photosensitive adhesive can be measured, for example, using a Hiranuma Sangyo moisture measurement device “AQV2100CT”.
  • the amount of water in the present invention is defined as follows.
  • An adhesive sheet obtained by laminating a transparent PET film as a cover film on a film-like photosensitive adhesive having a thickness of 50 ⁇ m formed on a PET substrate is cut into a size of 150 mm ⁇ 150 mm.
  • a mask is placed on the cut-out adhesive sheet, exposed using a high-precision parallel exposure machine (manufactured by Oak Manufacturing Co., Ltd.) under an exposure amount of 1000 mJ / cm 2 (irradiated with ultraviolet rays), and heated at 80 ° C. for 30 seconds. .
  • the PET film on one side is peeled off and developed using a spray phenomenon machine manufactured by Yako (developer: tetramethylammonium hydride (TMAH) 2.38% 27 ° C. spray pressure 0.18 MPa, water washing: pure water 23 ° C. and spray Pressure 0.02 MPa).
  • TMAH tetramethylammonium hydride
  • a photosensitive adhesive pattern is formed on the PET substrate as described above, and then the TMAH adhering to the film is washed with pure water for 6 minutes.
  • the PET substrate is peeled off at room temperature for 30 minutes, and the moisture content of the patterned film-like photosensitive adhesive is measured using a moisture measuring device “AQV2100CT” manufactured by Hiranuma Sangyo.
  • the water content in the present invention indicates the water content at this time.
  • the moisture content adjustment process in the present invention indicates that the moisture content is adjusted so that the moisture content at this time is 1.0% by weight or less.
  • the conditions for the moisture content adjustment process are appropriately adjusted depending on the type of film. For example, when the film-like photosensitive adhesive contains fluorine atoms, the amount of moisture absorbed is small and the affinity with the moisture absorbed is low. Spin drying or the like may be used. In other cases, it is preferable that the conditions are appropriately adjusted depending on the type of the film.
  • the heat treatment is performed as the moisture content adjustment treatment, it is preferably performed at 80 to 200 ° C. for 5 seconds to 30 minutes, more preferably 100 ° C. to 200 ° C. for 30 seconds to 20 minutes, It is particularly preferable that the reaction be performed at 120 ° C. to 200 ° C. for 1 minute to 10 minutes.
  • the moisture content of the patterned film-like photosensitive adhesive formed on the PET substrate is 1.0% by weight when it is less than 80 ° C. and less than 5 seconds.
  • the heating condition exceeds 200 ° C. and exceeds 30 minutes, the thermosetting of the patterned film-like photosensitive adhesive proceeds and the thermal fluidity during thermocompression is impaired. There is a tendency.
  • a patterned film-like photosensitive adhesive formed on an adherend is placed on a polyfluorinated ethylene fiber sheet or the like, and the entire polyfluorinated ethylene fiber sheet It can be placed on a hot plate and heated for a predetermined temperature and time.
  • thermocompression bonding between the semiconductor element and the adherend can be performed by, for example, pressure bonding at a heating temperature of 20 to 250 ° C. and a load of 0.01 to 20 kgf for 0.1 to 300 seconds.
  • the patterned film-like photosensitive adhesive is an adhesive layer forming step of forming an adhesive layer made of a film-like photosensitive adhesive on an adherend, and the adhesive layer is exposed in a predetermined pattern. It is preferably formed through an exposure step and a development step of developing the exposed adhesive layer with an alkaline aqueous solution.
  • a film-like photosensitive adhesive composition (varnish) is laminated on a substrate such as a silicon wafer by pressing with a roll, preferably at a temperature of 20 to 150 ° C.
  • a film-like photosensitive adhesive composition (varnish) is laminated on a substrate such as a silicon wafer by pressing with a roll, preferably at a temperature of 20 to 150 ° C.
  • a roll preferably at a temperature of 20 to 150 ° C.
  • the exposure step for example, a photomask on which a predetermined pattern is formed is placed on the adhesive layer, and a high-precision parallel exposure machine (manufactured by Oak Manufacturing Co., Ltd.) is used.
  • the exposure amount is 100 to 1000 mJ / cm 2 .
  • it can be irradiated (exposed) with ultraviolet rays.
  • the adhesive pattern may be such that a pattern is directly drawn and exposed on the adhesive layer using a direct drawing exposure technique. After this exposure step, if necessary, it may be heated at 40 to 120 ° C. for 5 to 30 seconds.
  • TMAH tetramethylammonium hydride
  • the line width of the pattern is preferably in the range of 0.01 mm to 20 mm.
  • the shape of the pattern is not particularly limited, and examples thereof include a frame shape, a line shape, a through hole, and the like. Among them, the frame shape can provide a stable patterned adhesive. This is preferable.
  • the film-like photosensitive adhesive preferably contains at least (A) a thermoplastic resin and (B) a thermosetting resin, and further contains (C) a radiation polymerizable compound and (D) a photoinitiator. Is preferred.
  • thermoplastic resin is not particularly limited as long as it is soluble in an alkali developer.
  • polyimide resin polyamide resin, polyamideimide resin, polyetherimide resin, polyurethaneimide resin, polyurethaneamideimide resin, siloxane
  • polyesterimide resins or copolymers thereof from the group consisting of phenoxy resins, polysulfone resins, polyethersulfone resins, polyphenylene sulfide resins, polyester resins, polyether ketone resins, (meth) acrylic copolymers, etc.
  • Examples include at least one selected resin, and among them, a polyimide resin is preferable in that both developability and heat resistance can be achieved, and a polyimide resin having an alkali-soluble group such as a carboxyl group and / or a hydroxyl group at a side chain or a terminal. More preferable
  • the polyimide resin can be obtained, for example, by subjecting tetracarboxylic dianhydride and diamine to a condensation reaction by a known method. That is, in the organic solvent, tetracarboxylic dianhydride and diamine are equimolar or, if necessary, the total amount of diamine is preferably 0.5 to The composition ratio is adjusted in the range of 2.0 mol, more preferably 0.8 to 1.0 mol (the order of addition of the respective components is arbitrary), and the addition reaction is carried out at a reaction temperature of 80 ° C. or lower, preferably 0 to 60 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases, and polyamic acid, which is a polyimide resin precursor, is generated.
  • the tetracarboxylic dianhydride is preferably recrystallized and purified with acetic anhydride in order to suppress deterioration of various properties of the adhesive.
  • the composition ratio of the tetracarboxylic dianhydride and diamine in the said condensation reaction when the total of diamine exceeds 2.0 mol with respect to the total 1.0 mol of tetracarboxylic dianhydride, the polyimide obtained In the resin, the amount of amine-terminated polyimide oligomer tends to increase. On the other hand, if the total amount of diamine is less than 0.5 mol, the amount of acid-terminated polyimide oligomer tends to increase, in any case However, the weight average molecular weight of the polyimide resin is lowered, and various properties including the heat resistance of the adhesive tend to be lowered.
  • the composition ratio of the tetracarboxylic dianhydride and the diamine so that the resulting polyimide resin has a weight average molecular weight of 10,000 to 300,000.
  • the polyimide resin can be obtained by dehydrating and ring-closing the reactant (polyamide acid).
  • the dehydration ring closure can be performed by a thermal ring closure method in which heat treatment is performed, a chemical ring closure method using a dehydrating agent, or the like.
  • the tetracarboxylic dianhydride used as a raw material for the polyimide resin is not particularly limited.
  • a represents an integer of 2 to 20.
  • the tetracarboxylic dianhydride represented by the above general formula (I) can be synthesized from, for example, trimellitic anhydride monochloride and the corresponding diol, specifically 1,2- (ethylene) bis ( Trimellitate anhydride), 1,3- (trimethylene) bis (trimellitic anhydride), 1,4- (tetramethylene) bis (trimellitate anhydride), 1,5- (pentamethylene) bis (trimellitate anhydride), 1 , 6- (Hexamethylene) bis (trimellitic anhydride), 1,7- (heptamethylene) bis (trimellitic anhydride), 1,8- (octamethylene) bis (trimellitic anhydride), 1,9- (nonamethylene) ) Bis (trimellitic anhydride), 1,10- (decamethylene) bis (trimellitate anhydrous), 1,12- (dodecamechi) Emissions) bis (trimellitate anhydride), 1,16 (hexamethylene decamethylene
  • the tetracarboxylic dianhydride represented by the following general formula (II) or (III) is preferable from the viewpoint of providing good solubility in a solvent and moisture resistance reliability. .
  • tetracarboxylic dianhydrides can be used singly or in combination of two or more.
  • the diamine used as the raw material for the polyimide resin preferably includes an aromatic diamine represented by the following formulas (IV) to (VII). These diamines represented by the following formulas (IV) to (VII) are preferably 1 to 70 mol% of the total diamines. Thereby, a polyimide resin soluble in an alkali developer can be prepared.
  • the other diamine used as the raw material for the polyimide resin is not particularly limited, and examples thereof include o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3′-diaminodiphenyl ether, and 3,4′-diaminodiphenyl ether.
  • Q 1 , Q 2 and Q 3 each independently represents an alkylene group having 1 to 10 carbon atoms, and b represents an integer of 2 to 80.
  • Q 4 and Q 9 each independently represents an alkylene group having 1 to 5 carbon atoms or a phenylene group which may have a substituent
  • Q 5 , Q 6 , Q 7 and Q 8 are each independently Represents an alkyl group having 1 to 5 carbon atoms, a phenyl group or a phenoxy group
  • d represents an integer of 1 to 5.
  • aliphatic diamine represented by the general formula (X) include 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6 -Diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-diamino And cyclohexane.
  • siloxane diamine represented by the general formula (XI) include those in which the d in the general formula (XI) is 1, 1,1,3,3-tetramethyl-1,3-bis (4 -Aminophenyl) disiloxane, 1,1,3,3-tetraphenoxy-1,3-bis (4-aminoethyl) disiloxane, 1,1,3,3-tetraphenyl-1,3-bis (2 -Aminoethyl) disiloxane, 1,1,3,3-tetraphenyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (2 -Aminoethyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetra
  • the other diamine used as a raw material for the polyimide resin is preferably one containing a fluorine atom and is referred to as 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (hereinafter referred to as “BIS-AP-AF”). ) Is more preferable.
  • a diamine containing a fluorine atom is used, the moisture content of the film-like photosensitive adhesive can be adjusted to be low. By containing a fluorine atom in the molecule, the amount of moisture to be absorbed is reduced, and the affinity for moisture absorbed is low, so it is considered that moisture is easily evaporated.
  • the diamine mentioned above can be used individually by 1 type or in combination of 2 or more types.
  • the said polyimide resin can be used individually by 1 type or in mixture (blend) of 2 or more types as needed.
  • thermosetting resin refers to a reactive compound capable of causing a crosslinking reaction by heat.
  • examples of such compounds include epoxy resins, cyanate resins, bismaleimide resins, phenol resins, urea resins, melamine resins, alkyd resins, acrylic resins, unsaturated polyester resins, diallyl phthalate resins, silicone resins, resorcinol formaldehyde resins, From xylene resin, furan resin, polyurethane resin, ketone resin, triallyl cyanurate resin, polyisocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, resin containing triallyl trimellitate, from cyclopentadiene
  • examples thereof include a thermosetting resin synthesized and a thermosetting resin by trimerization of aromatic dicyanamide.
  • thermosetting resins can be used singly or in combination of two or more.
  • epoxy resin those containing at least two epoxy groups in the molecule are more preferable, and phenol glycidyl ether type epoxy resins are particularly preferable from the viewpoints of curability and cured product characteristics.
  • examples of such resins include bisphenol A type (or AD type, S type, and F type) glycidyl ether, water-added bisphenol A type glycidyl ether, ethylene oxide adduct bisphenol A type glycidyl ether, and propylene oxide adduct.
  • epoxy resins it is possible to use high-purity products in which alkali metal ions, alkaline earth metal ions, halogen ions, particularly chlorine ions and hydrolyzable chlorine are reduced to 300 ppm or less as impurity ions. This is preferable for preventing migration and corrosion of metal conductor circuits.
  • thermosetting resin is preferably 5 to 200 parts by mass, more preferably 10 to 100 parts by mass, based on 100 parts by mass of the total solid content of the adhesive.
  • this content is less than 5 parts by mass, the heat resistance tends to decrease, and when it exceeds 200 parts by mass, the film formability tends to deteriorate.
  • the radiation-polymerizable compound is not particularly limited as long as it is a compound that is polymerized and / or cured by irradiation with radiation such as ultraviolet rays or electron beams.
  • Specific examples of radiation polymerizable compounds include methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, pentenyl acrylate, tetrahydro Furfuryl acrylate, tetrahydrofurfuryl methacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane diacryl
  • R 41 and R 42 each independently represent a hydrogen atom or a methyl group, and f and g each independently represents an integer of 1 or more. ]
  • the urethane acrylate and urethane methacrylate are produced, for example, by a reaction of a diol, an isocyanate compound represented by the following general formula (XIII), and a compound represented by the following general formula (XIV).
  • R 43 represents a divalent or trivalent organic group having 1 to 30 carbon atoms, and h represents 0 or 1.
  • R 44 represents a hydrogen atom or a methyl group
  • R 45 represents an ethylene group or a propylene group.
  • the urea methacrylate is produced, for example, by a reaction between a diamine represented by the following general formula (XV) and a compound represented by the following general formula (XVI).
  • R 46 represents a divalent organic group having 2 to 30 carbon atoms.
  • a compound having at least one ethylenically unsaturated group and a functional group such as an oxirane ring, an isocyanate group, a hydroxyl group, and a carboxyl group is added to a vinyl copolymer containing a functional group.
  • a radiation-polymerizable copolymer having an ethylenically unsaturated group in the side chain obtained by the reaction can be used.
  • the radiation polymerization compound represented by the general formula (XII) is preferable in that it can sufficiently impart solvent resistance after curing, and the urethane acrylate and urethane methacrylate can sufficiently impart high adhesiveness after curing. Is preferable.
  • the content of the radiation polymerizable compound is preferably 20 to 200 parts by mass, more preferably 30 to 100 parts by mass with respect to 100 parts by mass of (A) the thermoplastic resin.
  • this content exceeds 200 parts by mass, the fluidity at the time of heat melting is lowered due to polymerization, and the adhesiveness at the time of thermocompression bonding tends to be lowered.
  • it is less than 20 parts by mass, the solvent resistance after photocuring by exposure tends to be low, and it tends to be difficult to form a pattern.
  • the photoinitiator means a photopolymerization initiator that generates a free radical by irradiation or a photobase generator that generates a base by irradiation.
  • the photopolymerization initiator that generates free radicals upon irradiation with radiation
  • those having an absorption band at 300 to 500 nm are preferable in order to improve sensitivity.
  • photopolymerization initiators include benzophenone, N, N′-tetramethyl-4,4′-diaminobenzophenone (Michler ketone), N, N′-tetraethyl-4,4′-diaminobenzophenone, 4-methoxy -4'-dimethylaminobenzophenone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2,2-dimethoxy-1,2-diphenylethane-1-one, 1-hydroxy -Aromatic ketones such as cyclohexyl-phenyl-ketone, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropanone-1,2,4-diethylthioxanthone, 2-ethylanthraquinone, phenanthrenequinone, Benzoin methyl ether, benzoin ethyl ether, benzoin
  • the photobase generator is not particularly limited as long as it is a compound that generates a base when irradiated with radiation.
  • a strongly basic compound is preferable in terms of reactivity and curing speed.
  • a pKa value that is a logarithm of an acid dissociation constant is used as a basic index, and a base having a pKa value in an aqueous solution of 7 or more is preferable, and a base of 9 or more is more preferable.
  • Examples of the base generated upon irradiation with radiation include imidazole derivatives such as imidazole, 2,4-dimethylimidazole, and 1-methylimidazole, piperazine derivatives such as piperazine and 2,5-dimethylpiperazine, piperidine, 1,2, and the like.
  • -A piperidine derivative such as dimethylpiperidine, a proline derivative, a trialkylamine derivative such as trimethylamine, triethylamine or triethanolamine, an amino group or an alkylamino group substituted at the 4-position of 4-methylaminopyridine, 4-dimethylaminopyridine, etc.
  • Pyridine derivatives such as pyrrolidine and n-methylpyrrolidine
  • alicyclic amine derivatives such as triethylenediamine and 1,8-diazabiscyclo (5,4,0) undecene-1 (DBU)
  • DBU 1,8-diazabiscyclo (5,4,0) undecene-1
  • benzylmethylamine Benzyldimethylamine
  • benzylamine derivatives such as benzyl diethylamine.
  • an oxime derivative that generates a primary amino group upon irradiation with actinic rays and a commercially available 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropane-1- photo radical generator.
  • the optical fleece rearrangement in addition to or instead of using a photobase generator that generates a base by irradiation, the optical fleece rearrangement, the optical Claisen rearrangement (photocleisen rearrangement), the Curtius rearrangement (curtius rearrangement), and the Stevens rearrangement (Stevens rearrangement).
  • the optical fleece rearrangement photocleisen rearrangement
  • the Curtius rearrangement Curtius rearrangement
  • Stevens rearrangement Stevens rearrangement
  • the content of the photoinitiator is not particularly limited, but is usually 0.01 to 30 parts by mass with respect to 100 parts by mass of (A) the thermoplastic resin.
  • the film-like photosensitive adhesive may contain a curing accelerator as necessary.
  • the curing accelerator is not particularly limited as long as it cures the (B) thermosetting resin.
  • the curing accelerator is not particularly limited as long as it cures the (B) thermosetting resin.
  • the curing accelerator is not particularly limited as long as it cures the (B) thermosetting resin.
  • a curing agent can be contained in the film-like photosensitive adhesive as necessary.
  • the curing agent include phenolic compounds, aliphatic amines, alicyclic amines, aromatic polyamines, polyamides, aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, dicyandiamide, organic acids. Examples include dihydrazide, boron trifluoride amine complex, imidazoles, and tertiary amines. Among these, a phenolic compound is preferable, and a phenolic compound having at least two phenolic hydroxyl groups in the molecule is more preferable.
  • Examples of such compounds include phenol novolak, cresol novolak, t-butylphenol novolak, dicyclopentagen cresol novolak, dicyclopentagen phenol novolak, xylylene-modified phenol novolak, naphthol compound, trisphenol compound, tetrakisphenol.
  • Examples thereof include novolak, bisphenol A novolak, poly-p-vinylphenol, and phenol aralkyl resin. Among these, those having a number average molecular weight in the range of 400 to 1500 are preferable. Thereby, the outgas which becomes a cause of contamination of a semiconductor element or an apparatus at the time of thermocompression bonding can be suppressed.
  • the film-like photosensitive adhesive may contain a filler.
  • the filler include alumina, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, crystalline silica, and amorphous.
  • examples include inorganic fillers such as silica, boron nitride, titania, glass, iron oxide, and ceramics, and organic fillers such as carbon and rubber fillers, and they can be used without particular limitation regardless of the type and shape.
  • the content of the filler is determined according to the properties or functions to be imparted, but is usually 1 to 50% by mass, preferably 2 to 40% by mass, more preferably 5 to 30% with respect to the total of the resin component and the filler. % By mass.
  • the filler content is preferably within the above range.
  • the optimum filler content is determined in order to balance the required properties. Mixing and kneading in the case of using a filler can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a ball mill.
  • the film-like photosensitive adhesive can contain a silane coupling agent or the like, and it adsorbs ionic impurities to ensure insulation reliability during moisture absorption.
  • an ion scavenger can be included.
  • a thermal radical generator can be contained.
  • the film-like photosensitive adhesive comprises the above-mentioned components such as dimethylformamide, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, dioxane, cyclohexanone, ethyl acetate, and N-methyl-pyrrolidinone. It can be prepared by dissolving in an organic solvent to prepare a varnish, applying the varnish on a base material such as a release agent-treated PET, and drying the varnish.
  • a base material such as a release agent-treated PET
  • the film-like photosensitive adhesive preferably has a function as an adhesive for die bonding and a function as a photosensitive resin for forming a patterned insulating resin film.
  • Embodiments of the semiconductor device and semiconductor device manufacturing method according to the present invention include a semiconductor device having a structure in which semiconductor elements are stacked, a semiconductor device for a camera module, a semiconductor device having a flip chip structure, and the like.
  • a semiconductor device having a structure in which semiconductor elements are stacked a semiconductor device for a camera module
  • a semiconductor device having a flip chip structure a semiconductor device having a flip chip structure
  • 1, 2, 3, 4, 5 and 6 are end views or plan views showing an embodiment of a method of manufacturing a semiconductor device.
  • a film-like photosensitive adhesive 1 is provided on the circuit surface 25 of the semiconductor element 20 formed in the semiconductor wafer 2 (FIGS. 1A and 1B).
  • a step of patterning the film-like photosensitive adhesive 1 provided on the circuit surface 25 of the semiconductor element 20 by exposure and development (FIGS. 1C and 2A), and the semiconductor wafer 2 2 is polished from the surface opposite to the circuit surface 25 to thin the semiconductor wafer 2 (FIG. 2B), and the semiconductor wafer 2 is diced into a plurality of semiconductor elements 20 (FIG. 2C).
  • a plurality of semiconductor elements 20 divided by dicing lines 90 are formed in the semiconductor wafer 2 shown in FIG.
  • the film-like photosensitive adhesive 1 is provided on the surface of the semiconductor element 20 on the circuit surface 25 side (FIG. 1B).
  • molded in the film form, and affixing this on the semiconductor wafer 2 is simple.
  • the photosensitive adhesive 1 is a negative photosensitive adhesive that has an adhesive property to an adherend after being patterned by exposure and development and is capable of alkali development. More specifically, a resist pattern formed by patterning the film-like photosensitive adhesive 1 by exposure and development has adhesion to an adherend. For example, it is possible to bond the resist pattern and the adherend by applying pressure to the adherend while heating the resist pattern as necessary. Examples of the adherend include a semiconductor element and a glass substrate. In addition, the patterned film-like photosensitive adhesive may be formed in the semiconductor element which is a to-be-adhered body.
  • the photosensitive adhesive 1 laminated on the semiconductor wafer 2 is irradiated with actinic rays (typically ultraviolet rays) through a mask 3 having openings at predetermined positions (FIG. 1C). . Thereby, the photosensitive adhesive 1 is exposed in a predetermined pattern.
  • actinic rays typically ultraviolet rays
  • the photosensitive adhesive 1 can be patterned so that the opening 11 is formed by removing the unexposed portion of the photosensitive adhesive 1 by development using an alkali developer ( FIG. 2 (a)).
  • an alkali developer FIG. 2 (a)
  • FIG. 3 is a plan view showing a state in which the photosensitive adhesive 1 is patterned.
  • the bonding pad of the semiconductor element 20 is exposed. That is, the patterned photosensitive adhesive 1 is a buffer coat film of the semiconductor element 20.
  • a plurality of rectangular openings 11 are formed side by side on each semiconductor element 20. The shape, arrangement, and number of the openings 11 are not limited to those in the present embodiment, and can be appropriately modified so that a predetermined portion such as a bonding pad is exposed.
  • the surface of the semiconductor wafer 2 opposite to the photosensitive adhesive 1 can be polished to thin the semiconductor wafer 2 to a predetermined thickness (FIG. 2B). Polishing is performed, for example, by attaching an adhesive film on the photosensitive adhesive 1 and fixing the semiconductor wafer 2 to a polishing jig with the adhesive film. Note that the process of thinning the semiconductor wafer is possible even before patterning. Further, when the semiconductor wafer is thinned after patterning, the adhesive film may not be required.
  • the composite film 5 having the die bonding film 30 and the dicing film 40 laminated on the surface opposite to the photosensitive adhesive 1 of the semiconductor wafer 2 is the die bonding film 30 is the semiconductor wafer 2. It is pasted in the direction that touches. At the time of pasting, it can be performed while heating if necessary.
  • the semiconductor wafer 2 can be cut into a plurality of semiconductor elements 20 by cutting the semiconductor wafer 2 together with the composite film 5 along the dicing line 90 (FIG. 4A).
  • This dicing is performed using a dicing blade in a state where the whole is fixed to the frame by the dicing film 40, for example.
  • the semiconductor element 20 and the die bonding film 30 attached to the back surface thereof are picked up (FIG. 4B).
  • the picked-up semiconductor element 20 can be mounted on the support substrate 7 via the die bonding film 30 (FIG. 5A).
  • the second-layer semiconductor element 21 can be directly bonded to the photosensitive adhesive 1 on the semiconductor element 20 mounted on the support substrate 7 (FIG. 5B).
  • the semiconductor element 20 and the semiconductor element 21 located on the upper layer thereof are bonded by the patterned photosensitive adhesive 1 (buffer coat film) interposed therebetween.
  • the semiconductor element 21 is bonded to a position where the opening 11 of the patterned photosensitive adhesive 1 is not blocked.
  • the patterned photosensitive adhesive 1 (buffer coating film) is also formed on the circuit surface of the semiconductor element 21.
  • the bonding of the semiconductor element 21 may be performed, for example, by a method of thermocompression bonding while heating to a temperature at which the photosensitive adhesive 1 exhibits fluidity. At this time, a heat-resistant semiconductor device can be obtained by adjusting the moisture content of the film-like photosensitive adhesive. After thermocompression bonding, the photosensitive adhesive 1 may be heated as necessary to further cure.
  • the semiconductor element 20 is connected to an external connection terminal on the support base 7 via a wire 80 connected to the bonding pad, and the semiconductor element 21 is connected to a support base via a wire 81 connected to the bonding pad. 7 is connected to the external connection terminal. Then, the stacked body including a plurality of semiconductor elements is sealed with the sealing resin layer 60, whereby the semiconductor device 100 can be obtained (FIG. 6).
  • the manufacturing method of the semiconductor device is not limited to the embodiment described above, and can be appropriately changed without departing from the gist of the present invention.
  • dicing may be performed after the semiconductor wafer 2 to which the film-like photosensitive adhesive 1 is attached is thinned by polishing.
  • the photosensitive adhesive 1 is patterned by exposure and development to obtain a laminate similar to that shown in FIG. Or after thinning by grinding
  • three or more layers of semiconductor elements may be laminated. In that case, at least one pair of adjacent semiconductor elements are directly bonded by a patterned photosensitive adhesive (lower layer buffer coat film). It is preferable.
  • the semiconductor wafer 120 with an adhesive layer is obtained by laminating the adhesive film (adhesive layer) 101 on the semiconductor wafer 105 while heating.
  • the semiconductor wafer 120 with an adhesive layer is suitably used for manufacturing electronic components such as a CCD camera module and a CMOS camera module through a process of adhering an adherend to the semiconductor wafer 105 via the adhesive layer 101.
  • a CCD camera module an example of manufacturing a CCD camera module will be described.
  • a CMOS camera module can also be manufactured by a similar method.
  • FIG. 9 is a top view showing an embodiment of the adhesive pattern
  • FIG. 10 is an end view taken along the line VI-VI of FIG.
  • the adhesive pattern 101a shown in FIGS. 9 and 10 has a pattern along a substantially square side surrounding a plurality of effective pixel regions 107 provided on the semiconductor wafer 105 on the semiconductor wafer 105 as an adherend. Is formed.
  • FIG. 11 is a top view showing an embodiment of an adhesive pattern
  • FIG. 12 is an end view taken along the line VIII-VIII in FIG.
  • the adhesive pattern 101b shown in FIGS. 11 and 12 is patterned on the semiconductor wafer 105 as the adherend so as to form a substantially square opening through which the effective pixel region 107 provided on the semiconductor wafer 105 is exposed. Has been.
  • the adhesive patterns 101a and 101b are obtained by forming an adhesive layer 101 made of a photosensitive adhesive composition on a semiconductor wafer 105 as an adherend to obtain a semiconductor wafer 120 with an adhesive layer. It is formed by exposing through a mask and developing the exposed adhesive layer 101 with an alkaline aqueous solution. That is, the adhesive patterns 101a and 101b are composed of a photosensitive adhesive composition after exposure.
  • FIG. 13 is a top view showing a state in which the cover glass 109 is bonded to the semiconductor wafer 120 via the adhesive pattern 101a
  • FIG. 14 is an end view taken along the line XX of FIG.
  • FIG. 15 is a top view showing a state where the cover glass 109 is bonded to the semiconductor wafer 120 via the adhesive pattern 101b
  • FIG. 16 is an end view taken along the line XI-XI in FIG.
  • the cover glass 9 is bonded to the semiconductor wafer 120 with the heat-cured adhesive pattern 101a or 101b interposed therebetween.
  • the cover glass 109 is adhered by placing the cover glass 109 on the adhesive pattern 101a or 101b and thermocompression bonding it. At this time, by performing a moisture content adjustment process on the film-like photosensitive adhesive, it is possible to prevent defects in the semiconductor device such as peeling of the cover glass.
  • the adhesive patterns 101 a and 101 b function as an adhesive for bonding the cover glass 109 and also function as a spacer for securing a space surrounding the effective pixel region 107.
  • the semiconductor device 130a shown in FIG. 17 or the semiconductor device 130b shown in FIG. 18 is obtained by dicing along the broken line D.
  • the semiconductor device 130a includes a semiconductor wafer 105, an effective pixel region 107, an adhesive pattern (adhesive layer) 101a, and a cover glass 109.
  • the semiconductor device 130b includes a semiconductor wafer 105, an effective pixel region 107, an adhesive pattern (adhesive layer) 101b, and a cover glass 109.
  • the semiconductor device described above can be suitably used for electronic components such as a CCD camera module.
  • FIG. 19 is a cross-sectional view showing an embodiment of a CCD camera module including the semiconductor device.
  • a CCD camera module 150a shown in FIG. 19 is an electronic component including a semiconductor device 130a as a solid-state imaging device.
  • the semiconductor device 130 a is bonded to the semiconductor element mounting support base material 115 via the die bond film 111.
  • the semiconductor device 130a is electrically connected to the external connection terminal through the wire 112.
  • the CCD camera module 150a includes a lens 140 provided so as to be positioned immediately above the effective pixel region 107, a lens 140, a side wall 116 provided so as to enclose the semiconductor device 130a together with the lens 140, and the lens 140.
  • the fitting member 117 interposed between the lens 140 and the side wall 116 in the fitted state is mounted on the semiconductor element mounting support base 115.
  • FIG. 20 is a cross-sectional view showing an embodiment of a CCD camera module as an electronic component.
  • the semiconductor device 130a is mounted on the semiconductor element mounting support base 115 via the solder 113 instead of the configuration in which the semiconductor device is bonded using a die bonding film as in the above embodiment. And have a configuration bonded.
  • FIG. 21 is a cross-sectional view showing an embodiment of a semiconductor device.
  • a semiconductor device 201 includes a substrate (first adherend) 203 having a connection terminal (first connection portion: not shown) and a semiconductor having a connection electrode portion (second connection portion: not shown).
  • a chip (second adherend) 205, an insulating resin layer 207 made of a photosensitive adhesive, and a conductive layer 209 made of a conductive material are provided.
  • the substrate 203 has a circuit surface 211 that faces the semiconductor chip 205, and is arranged at a predetermined interval from the semiconductor chip 205.
  • the insulating resin layer 207 is formed between the substrate 203 and the semiconductor chip 205 in contact with each of the substrate 203 and the semiconductor chip 205, and has a predetermined pattern.
  • the conductive layer 209 is formed in a portion where the insulating resin layer 207 is not disposed between the substrate 203 and the semiconductor chip 205.
  • the connection electrode portion of the semiconductor chip 205 is electrically connected to the connection terminal of the substrate 203 through the conductive layer 209.
  • the semiconductor device 201 can be suitably used for an electronic component including a flip chip structure.
  • the method for manufacturing a semiconductor device includes a step of providing an insulating resin layer 207 made of a photosensitive adhesive on a substrate 203 having connection terminals (first step: FIGS. 22 and 23), and an insulating resin layer.
  • Step 207 is patterned by exposure and development so as to form an opening 213 through which the connection terminal is exposed (second step: FIGS. 24 and 25), and a conductive material is filled in the opening 213 to form the conductive layer 209.
  • the step of forming (third step: FIG.
  • An insulating resin layer 207 made of a photosensitive adhesive is provided on the circuit surface 211 of the substrate 203 shown in FIG. 22 (FIG. 23).
  • a method of preparing a photosensitive adhesive (hereinafter referred to as “adhesive film” in some cases) formed in advance in the form of a film and affixing it to the substrate 203 is simple.
  • the photosensitive adhesive may be provided by a method in which a liquid varnish containing the photosensitive adhesive is applied to the substrate 203 using a spin coating method or the like, and is heated and dried.
  • the photosensitive adhesive is a negative photosensitive adhesive that has an adhesive property to an adherend after being patterned by exposure and development and is capable of alkali development. More specifically, a resist pattern formed by patterning a photosensitive adhesive by exposure and development has adhesion to adherends such as semiconductor chips and substrates. For example, it is possible to bond the resist pattern and the adherend by applying pressure to the adherend while heating the resist pattern as necessary. Details of the photosensitive adhesive having such a function will be described later.
  • Actinic rays (typically ultraviolet rays) are irradiated to the insulating resin layer 207 provided on the substrate 203 through a mask 215 having openings at predetermined positions (FIG. 24). Thereby, the insulating resin layer 207 is exposed in a predetermined pattern.
  • the portion of the insulating resin layer 207 that has not been exposed is removed by development using an alkaline developer, whereby the insulating resin layer 207 is formed so that the opening 213 through which the connection terminal of the substrate 203 is exposed is formed. Patterning is performed (FIG. 25). Note that a positive photosensitive adhesive can be used instead of the negative type, and in this case, the exposed portion of the insulating resin layer 207 is removed by development.
  • the conductive layer 209 is formed by filling the opening 213 of the obtained resist pattern with a conductive material (FIG. 26).
  • a conductive material As a method for filling the conductive material, various methods such as gravure printing, pressing with a roll, and vacuum filling can be employed.
  • the conductive material used here is a metal such as solder, gold, silver, nickel, copper, platinum, palladium or ruthenium oxide, or an electrode material made of a metal oxide, etc.
  • conductive Examples include those containing at least particles and a resin component.
  • electroconductive particles such as metals or metal oxides, such as gold
  • resin component curable resin compositions mentioned above, such as an epoxy resin and its hardening
  • the semiconductor chip 205 is directly bonded to the insulating resin layer 207 on the substrate 203.
  • the connection electrode portion of the semiconductor chip 205 is electrically connected to the connection terminal of the substrate 203 through the conductive layer 209.
  • a patterned insulating resin layer may be formed on the circuit surface of the semiconductor chip 205 opposite to the insulating resin layer 207.
  • the semiconductor chip 205 is bonded by, for example, a method of thermocompression bonding while heating to a temperature at which the photosensitive adhesive exhibits fluidity. At this time, a heat-resistant semiconductor device can be obtained by adjusting the moisture content of the film-like photosensitive adhesive. After thermocompression bonding, the insulating resin layer 207 is heated as necessary to further cure.
  • the semiconductor device 201 having the configuration as shown in FIG. 21 is obtained.
  • the manufacturing method of the semiconductor device is not limited to the above-described embodiment, and can be appropriately changed without departing from the gist of the present invention.
  • the photosensitive adhesive is not limited to being first provided on the substrate 203, but may be provided first on the semiconductor chip 205.
  • the semiconductor device manufacturing method includes, for example, a first step of providing an insulating resin layer 207 made of a photosensitive adhesive on a semiconductor chip 205 having a connection electrode portion, and exposing and developing the insulating resin layer 207 by exposure and development. A second step of patterning so as to form an opening 213 through which the connection electrode portion is exposed; a third step of filling the opening 213 with a conductive material to form a conductive layer 209; and a substrate having connection terminals.
  • connection terminal of the substrate 203 and the connection electrode portion of the semiconductor chip 205 are electrically connected via the conductive layer 209. And a fourth step of connecting to.
  • connection terminal on the substrate 203 and the connection electrode portion on the semiconductor chip 205 are easily connected.
  • the photosensitive adhesive can be first provided on a semiconductor wafer composed of a plurality of semiconductor chips 205.
  • the semiconductor device manufacturing method includes, for example, a first step of providing an insulating resin layer 207 made of a photosensitive adhesive on a semiconductor wafer 217 made up of a plurality of semiconductor chips 205 having connection electrode portions (FIG. 7), a second step of patterning the insulating resin layer 207 by exposure and development so as to form an opening 213 through which the connection electrode portion is exposed, and filling the opening 213 with a conductive material to form the conductive layer 209.
  • a third step of forming and a wafer-sized substrate having a connection terminal (a substrate having a size similar to that of a semiconductor wafer) 203 are formed on the insulating resin layer 207 of the stacked body of the semiconductor wafer 217 and the insulating resin layer 207.
  • the connection terminal of the substrate 203 and the connection electrode portion of the semiconductor chip 205 constituting the semiconductor wafer 217 are electrically connected via the conductive layer 209. Comprising 4 and step, isolate laminate of the semiconductor wafer 217 and the insulating resin layer 207 and the substrate 203 for each semiconductor chip 205 and (dicing) the fifth step.
  • the insulating resin layer 207 made of a photosensitive adhesive is provided on the wafer-sized substrate 203 in the first step, and the semiconductor wafer 217 is bonded to the substrate 203 and the insulating resin layer in the fourth step. 207 is directly bonded to the insulating resin layer 207 of the laminate, and the connection terminals of the substrate 203 and the connection electrode portions of the semiconductor chip 205 constituting the semiconductor wafer 217 are electrically connected via the conductive layer 209, In the fifth step, a stacked body of the semiconductor wafer 217, the insulating resin layer 207, and the substrate 203 may be cut for each semiconductor chip 205.
  • the above manufacturing method is preferable in terms of work efficiency because the process (fourth process) up to the connection between the semiconductor wafer 217 and the substrate 203 can be performed in the wafer size.
  • Another semiconductor device manufacturing method includes a first step of providing an insulating resin layer 207 made of a photosensitive adhesive on a semiconductor wafer 217 made up of a plurality of semiconductor chips 205 having connecting electrode portions, A second step of patterning the resin layer 207 by exposure and development so as to form an opening 213 through which the connection electrode portion is exposed, and a third step of forming a conductive layer 209 by filling the opening 213 with a conductive material.
  • the conductive layer 209 is directly bonded to the insulating resin layer 207 of the laminate with the layer 207 and the connection terminal of the substrate 203 and the connection electrode portion of the semiconductor chip 205 are connected.
  • the insulating resin layer 207 made of a photosensitive adhesive is provided on the wafer size substrate 203 in the first step, and the wafer size substrate 203 and the insulating resin layer 207 in the fourth step.
  • the semiconductor chip 205 is directly bonded to the insulating resin layer 207 of the stacked body of the substrate 203 and the insulating resin layer 207, and the substrate
  • the connection terminal 203 and the connection electrode portion of the semiconductor chip 205 may be electrically connected through the conductive layer 209.
  • the above production method is preferable in that the process from the formation of the photosensitive adhesive to the conductive material filling step (third step) can be performed in a wafer size, and the dicing step (fourth step) can be performed smoothly.
  • a semiconductor laminate can be formed by bonding semiconductor wafers or semiconductor chips using a photosensitive adhesive. It is also possible to form a through electrode in this laminate.
  • the semiconductor device manufacturing method includes, for example, a first step of providing an insulating resin layer 207 made of a photosensitive adhesive on a first semiconductor chip 205 having a connection electrode portion of a through electrode, and an insulating resin layer.
  • a semiconductor wafer may be used instead of the semiconductor chip.
  • the said electronic component is normally manufactured through the hardening process and the solder reflow process which harden an adhesive agent.
  • ODPA 4,4′-oxydiphthalic dianhydride
  • polyimide PI-1 polyimide
  • polyimide PI-2 polyimide PI-2
  • the obtained polyimide PI-2 had a Tg of 60 ° C.
  • ODPA 4,4′-oxydiphthalic dianhydride
  • polyimide PI-3 polyimide
  • the obtained polyimide PI-3 had a Tg of 75 ° C.
  • TAA trimellitic anhydride
  • the weight average molecular weight Mw of the obtained polyimide PI-4 was measured by GPC and found to be 25,000 in terms of polystyrene. Further, Tg of the obtained polyimide PI-4 was 70 ° C.
  • Examples 1 to 7 and Comparative Examples 1 to 3 The above-mentioned varnish is applied to a substrate (peeling agent-treated PET) to a thickness of 50 ⁇ m, and heated in an oven at 80 ° C. for 30 minutes, then at 120 ° C. for 30 minutes, respectively, to form a film with a substrate An adhesive was obtained. Next, the characteristics of the film adhesives of Examples 1 to 7 and Comparative Examples 1 to 3 were evaluated under the following conditions. The results are shown in Tables 3-5.
  • An adhesive sheet obtained by laminating a transparent PET film as a cover film on a film-like photosensitive adhesive having a thickness of 50 ⁇ m formed on a transparent PET substrate was cut into a size of 150 mm ⁇ 150 mm.
  • a mask was placed on the cut out adhesive sheet, exposed using a high-precision parallel exposure machine (manufactured by Oak Manufacturing Co., Ltd.) under the condition of exposure amount: 1000 mJ / cm 2 (irradiated with ultraviolet rays), and heated at 80 ° C. for 30 seconds. . Thereafter, the PET film on one side was peeled off and developed using a spray phenomenon machine manufactured by Yako (Developer: Tetramethylammonium hydride (TMAH) 2.38% 27 ° C. Spray pressure 0.18 MPa, water washing: pure water 23 ° C. and spray Pressure 0.02 MPa).
  • TMAH Tetramethylammonium hydride
  • a pattern was formed on the other PET substrate, and then TMAH adhering to the film was washed with pure water for 6 minutes. Then, it was left to stand at room temperature for 30 minutes, the PET base material was peeled off, and the moisture content of the patterned film-like photosensitive adhesive was measured using Hiranuma Sangyo's moisture measuring device “AQV2100CT”.
  • a film-like photosensitive adhesive with a base material is laminated on a 6-inch diameter, 400 ⁇ m thick silicon wafer using a laminating apparatus, bonding temperature: 80 ° C., linear pressure: 4 kgf / cm, and feeding speed: 0.5 m. Bonding was performed under the conditions of / min.
  • a negative pattern mask is placed on the PET substrate side of the film-like photosensitive adhesive with a substrate, and the exposure amount is 1000 mJ / with a high-precision parallel exposure machine (manufactured by Oak Seisakusho: EXM-1172-B- ⁇ ). Exposure was performed under the conditions of cm 2 (irradiation with ultraviolet rays), and heat treatment was further performed under conditions of 80 ° C. for 30 seconds. Thereafter, the substrate is peeled off, and spray development processing (developer: tetramethylammonium hydride (TMAH) 2.38% 27 ° C., spray pressure 0.18 MPa, water washing: pure water 23 using a conveyor developing machine (manufactured by Yako). The film-like photosensitive adhesive was patterned by applying a spray pressure of 0.02 MPa.
  • TMAH tetramethylammonium hydride
  • the adhering TMAH is washed with pure water for 6 minutes and then allowed to stand at room temperature for 30 minutes. Then, if necessary, the standing time is extended or moisture absorption treatment is performed, and the moisture content is adjusted under predetermined conditions after patterning Processed.
  • a glass of 30 mm ⁇ 30 mm ⁇ thickness 0.35 mm is placed on a patterned film-like photosensitive adhesive, and a crimping temperature using a flat tool thermocompression bonding apparatus OH-105ATF manufactured by Ohashi Manufacturing Co., Ltd. : 150 ° C, pressure bonding load: 0.5 MPa, and pressure bonding time: 10 minutes under heat and pressure.
  • the obtained sample was heat-cured in an oven under conditions of 160 ° C. for 3 hours and 180 ° C. for 3 hours. Then, it heated on the hotplate of 260 degreeC, and time until the void by glass / adhesive interface peeling or foaming generate
  • produced was measured.
  • the case where peeling or foaming occurred immediately after heating at 260 ° C. was defined as NG.
  • Examples 1 to 7 are superior in thermal history stability (heat resistance) after thermocompression bonding as compared with Comparative Examples 1 to 3.
  • SYMBOLS 1 Film-like photosensitive adhesive (adhesive film), 2 ... Semiconductor wafer, 3,215 ... Mask, 5 ... Composite film, 7 ... Support base material, 9 ... Cover glass, 11 ... Opening, 20, 21 ... Semiconductor Element: 25 ... Circuit surface, 30 ... Die bonding film, 40 ... Dicing film, 60 ... Sealing resin layer, 80, 81 ... Wire, 90 dicing line, 100, 130a, 130b, 201 ... Semiconductor device, 101 ... Adhesive Layer 101a ... adhesive pattern 101b ... adhesive pattern 107 ... effective pixel area 109 ... cover glass 111 ... die bond film 112 ... wire 115 ...

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

L'invention porte sur un dispositif à semi-conducteurs ayant une excellente résistance à la chaleur, dans lequel un élément semi-conducteur et un objet devant être collés sont collés ensemble par un adhésif photosensible du type film à motifs au moyen d'un assemblage par compression thermique. Dans le dispositif à semi-conducteurs, la teneur en eau dans l'adhésif photosensible du type film à motifs juste avant l'assemblage par compression thermique n'est pas supérieure à 1,0 % en poids.
PCT/JP2009/061596 2007-12-12 2009-06-25 Dispositif à semi-conducteurs et son procédé de fabrication WO2010032529A1 (fr)

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US13/120,191 US20110223397A1 (en) 2007-12-12 2009-06-25 Semiconductor device and method for manufacturing the same
CN2009801370978A CN102160163A (zh) 2008-09-22 2009-06-25 半导体装置及其制造方法

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Cited By (2)

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US20120175790A1 (en) * 2011-01-07 2012-07-12 Samsung Electronics Co., Ltd. Composition for patternable adhesive film, patternable adhesive film, and method of manufacturing semiconductor package using the same
JPWO2015190210A1 (ja) * 2014-06-12 2017-04-20 太陽インキ製造株式会社 硬化性樹脂組成物、ドライフィルム、硬化物およびプリント配線板

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Publication number Priority date Publication date Assignee Title
JP5871771B2 (ja) * 2012-10-26 2016-03-01 東京応化工業株式会社 ポジ型感光性樹脂組成物、ポリイミド樹脂パターンの形成方法、及びパターン化されたポリイミド樹脂膜
US9418974B2 (en) 2014-04-29 2016-08-16 Micron Technology, Inc. Stacked semiconductor die assemblies with support members and associated systems and methods
JP6961342B2 (ja) * 2016-12-27 2021-11-05 サムスン エレクトロニクス カンパニー リミテッド ポリイミド樹脂およびポジ型感光性樹脂組成物
WO2019088268A1 (fr) * 2017-11-06 2019-05-09 旭化成株式会社 Stratifié de résine photosensible et procédé de production d'un motif de réserve

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JPH05152355A (ja) * 1991-11-25 1993-06-18 Nitto Denko Corp 半導体装置
WO1997002595A1 (fr) * 1995-07-06 1997-01-23 Hitachi Chemical Company, Ltd. Dispositif a semi-conducteur et sa production
JP2008088403A (ja) * 2006-09-05 2008-04-17 Hitachi Chem Co Ltd 感光性接着剤組成物、及びそれを用いた接着フィルム、接着シート、接着剤パターン、並びに半導体装置
JP2009164574A (ja) * 2007-12-12 2009-07-23 Hitachi Chem Co Ltd 半導体装置及びその製造方法

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Publication number Priority date Publication date Assignee Title
JPH05152355A (ja) * 1991-11-25 1993-06-18 Nitto Denko Corp 半導体装置
WO1997002595A1 (fr) * 1995-07-06 1997-01-23 Hitachi Chemical Company, Ltd. Dispositif a semi-conducteur et sa production
JP2008088403A (ja) * 2006-09-05 2008-04-17 Hitachi Chem Co Ltd 感光性接着剤組成物、及びそれを用いた接着フィルム、接着シート、接着剤パターン、並びに半導体装置
JP2009164574A (ja) * 2007-12-12 2009-07-23 Hitachi Chem Co Ltd 半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120175790A1 (en) * 2011-01-07 2012-07-12 Samsung Electronics Co., Ltd. Composition for patternable adhesive film, patternable adhesive film, and method of manufacturing semiconductor package using the same
JPWO2015190210A1 (ja) * 2014-06-12 2017-04-20 太陽インキ製造株式会社 硬化性樹脂組成物、ドライフィルム、硬化物およびプリント配線板

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