CN102143981B - 低释气性光刻胶组合物 - Google Patents

低释气性光刻胶组合物 Download PDF

Info

Publication number
CN102143981B
CN102143981B CN2009801347011A CN200980134701A CN102143981B CN 102143981 B CN102143981 B CN 102143981B CN 2009801347011 A CN2009801347011 A CN 2009801347011A CN 200980134701 A CN200980134701 A CN 200980134701A CN 102143981 B CN102143981 B CN 102143981B
Authority
CN
China
Prior art keywords
group
repeating unit
polymkeric substance
photoetching compositions
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009801347011A
Other languages
English (en)
Chinese (zh)
Other versions
CN102143981A (zh
Inventor
R·苏里亚库马兰
H·特鲁昂
R·A·迪皮特罗
S·A·斯万松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN102143981A publication Critical patent/CN102143981A/zh
Application granted granted Critical
Publication of CN102143981B publication Critical patent/CN102143981B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F36/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds
    • C08F36/02—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds
    • C08F36/20—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds unconjugated
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/16—Halogens
    • C08F12/20—Fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • C08F12/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16—Halogens
    • C08F212/20—Fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
CN2009801347011A 2008-09-08 2009-07-16 低释气性光刻胶组合物 Expired - Fee Related CN102143981B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/206,065 US7951525B2 (en) 2008-09-08 2008-09-08 Low outgassing photoresist compositions
US12/206,065 2008-09-08
PCT/EP2009/059160 WO2010025983A1 (en) 2008-09-08 2009-07-16 Low outgassing photoresist compositions

Publications (2)

Publication Number Publication Date
CN102143981A CN102143981A (zh) 2011-08-03
CN102143981B true CN102143981B (zh) 2013-05-15

Family

ID=41110952

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801347011A Expired - Fee Related CN102143981B (zh) 2008-09-08 2009-07-16 低释气性光刻胶组合物

Country Status (7)

Country Link
US (1) US7951525B2 (US07951525-20110531-C00015.png)
EP (1) EP2285845B1 (US07951525-20110531-C00015.png)
JP (1) JP5735915B2 (US07951525-20110531-C00015.png)
KR (1) KR101589776B1 (US07951525-20110531-C00015.png)
CN (1) CN102143981B (US07951525-20110531-C00015.png)
TW (1) TWI493290B (US07951525-20110531-C00015.png)
WO (1) WO2010025983A1 (US07951525-20110531-C00015.png)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8323868B2 (en) * 2009-11-06 2012-12-04 International Business Machines Corporation Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof
EP2503230A1 (en) 2011-03-22 2012-09-26 Solvay Specialty Polymers Italy S.p.A. A led lighting device with an adjustable spatial distribution of the emitted light
MY170660A (en) 2011-12-14 2019-08-26 Mitsui Chemicals Tohcello Inc Adhesive resin composition, laminate, and self-stripping method
JP6051013B2 (ja) * 2012-10-26 2016-12-21 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
JP6217940B2 (ja) * 2012-12-19 2017-10-25 日産化学工業株式会社 環状ジエステル基を有するシリコン含有レジスト下層膜形成組成物
JP6052207B2 (ja) * 2014-03-04 2016-12-27 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
CN112661741A (zh) * 2020-12-23 2021-04-16 上海博栋化学科技有限公司 一种含米氏酸结构的光刻胶树脂单体及其合成方法
CN115403976B (zh) * 2022-08-19 2023-04-18 嘉庚创新实验室 一种抗反射涂层组合物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1605938A (zh) * 2003-10-08 2005-04-13 海力士半导体有限公司 光致抗蚀剂聚合物及包含其的光致抗蚀剂组合物
CN101255212A (zh) * 2007-02-28 2008-09-03 住友化学株式会社 二烯聚合物和制备该二烯聚合物的方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189323A (en) * 1977-04-25 1980-02-19 Hoechst Aktiengesellschaft Radiation-sensitive copying composition
JPS5559181A (en) * 1978-10-30 1980-05-02 Mitsui Petrochem Ind Ltd Preparation of alkenyl-malonic acid cyclic ester
US4284706A (en) * 1979-12-03 1981-08-18 International Business Machines Corporation Lithographic resist composition for a lift-off process
US4442197A (en) * 1982-01-11 1984-04-10 General Electric Company Photocurable compositions
ATE37242T1 (de) * 1984-02-10 1988-09-15 Ciba Geigy Ag Verfahren zur herstellung einer schutzschicht oder einer reliefabbildung.
US4603101A (en) * 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
US5403908A (en) * 1989-10-06 1995-04-04 Idemitsu Kosan Company, Limited Aryl styrene-based copolymer
DE4106357A1 (de) * 1991-02-28 1992-09-03 Hoechst Ag Strahlungsempfindliche polymere mit 2-diazo-1,3-dicarbonyl-gruppen, verfahren zu deren herstellung und verwendung in einem positiv arbeitenden aufzeichnungsmaterial
US5272232A (en) * 1992-01-21 1993-12-21 The United States Of America As Represented By The Secretary Of Commerce Hydroxyfluoroalkyl-substituted styrenes and polymeric compositions containing same
US5241007A (en) * 1992-01-21 1993-08-31 The United Statets Of America As Represented By The Secretary Of Commerce Hydroxyfluoroalkyl-substituted styrenes and polymeric compositions containing same
US5243053A (en) * 1992-02-26 1993-09-07 Eli Lilly And Company Methylene meldrum's acid precursors
US5344742A (en) * 1993-04-21 1994-09-06 Shipley Company Inc. Benzyl-substituted photoactive compounds and photoresist compositions comprising same
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JPH07191463A (ja) * 1993-12-27 1995-07-28 Fujitsu Ltd レジストおよびこれを使った半導体装置の製造方法
US5580694A (en) * 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
US5932391A (en) * 1995-08-18 1999-08-03 Kabushiki Kaisha Toshiba Resist for alkali development
KR0164981B1 (ko) * 1995-11-28 1999-03-20 김흥기 아세탈기를 함유하는 알콕시-스틸렌 중합체와 그의 제조방법 및 알콕시-스틸렌 중합체를 주요 구성성분으로 하는 화학증폭형 포토레지스트 재료
EP0780732B1 (en) * 1995-12-21 2003-07-09 Wako Pure Chemical Industries Ltd Polymer composition and resist material
DE69715799T2 (de) * 1996-12-30 2003-08-14 Centre Nat Rech Scient Ionisch leitfähige Materialien, die eine von Malononitril abgeleitete ionische Verbindung enthalten und ihre Verwendungen
KR19990081722A (ko) * 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
JP3840052B2 (ja) * 1998-08-10 2006-11-01 株式会社東芝 レジスト用樹脂
JP3763693B2 (ja) * 1998-08-10 2006-04-05 株式会社東芝 感光性組成物及びパターン形成方法
US6303266B1 (en) * 1998-09-24 2001-10-16 Kabushiki Kaisha Toshiba Resin useful for resist, resist composition and pattern forming process using the same
US6365321B1 (en) * 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
WO2001013179A1 (en) * 1999-08-13 2001-02-22 Board Of Regents, University Of Texas System Water-processable photoresist compositions
US6369279B1 (en) * 1999-09-08 2002-04-09 Shin-Etsu Chemical Co., Ltd. Styrene derivatives
KR20010045418A (ko) * 1999-11-05 2001-06-05 박종섭 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
EP1906241A1 (en) * 2006-09-29 2008-04-02 FUJIFILM Corporation Resist composition and pattern forming method using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1605938A (zh) * 2003-10-08 2005-04-13 海力士半导体有限公司 光致抗蚀剂聚合物及包含其的光致抗蚀剂组合物
CN101255212A (zh) * 2007-02-28 2008-09-03 住友化学株式会社 二烯聚合物和制备该二烯聚合物的方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Barry M.Trost et al.Bromomalonates as Synthetic Reagents. Transfer Alkylations.《Journal of the American Chemical Society》.1976,第98卷(第5期),p1204-1212. *
JP昭55-59181A 1980.05.02
Kwun-Ngai Lau et al.Dendronized Polymer Organogels from Click Chemistry: A Remarkable Gelation Property Owing to Synergistic Functional-Group Binding and Dendritic Size Effects.《Angew.Chem.Int.Ed.》.2008,第120卷p7018-7022. *
Takeshi Okada et al.Pd-Catalyzed Polymerization of Dienes that Involves Chain-Walking Isomerization of the Growing Polymer End:Synthesis of Polymers Composed of Polymethylene and Five-Membered-Ring Units.《Angew.Chem.Int.Ed.》.2007,第46卷p6141-6143. *

Also Published As

Publication number Publication date
US7951525B2 (en) 2011-05-31
JP2012502123A (ja) 2012-01-26
TW201022849A (en) 2010-06-16
JP5735915B2 (ja) 2015-06-17
WO2010025983A1 (en) 2010-03-11
KR101589776B1 (ko) 2016-01-28
KR20110065438A (ko) 2011-06-15
TWI493290B (zh) 2015-07-21
EP2285845A1 (en) 2011-02-23
US20100062368A1 (en) 2010-03-11
CN102143981A (zh) 2011-08-03
EP2285845B1 (en) 2013-09-04

Similar Documents

Publication Publication Date Title
CN102143981B (zh) 低释气性光刻胶组合物
EP0829766B1 (en) Novel polymers and photoresist compositions
EP0942329B1 (en) Novel process for preparing resists
TW565739B (en) Resist composition suitable for short wavelength exposure and resist pattern forming method
JP6100261B2 (ja) 現像可能な下層反射防止膜形成用組成物
JP6005866B2 (ja) 現像可能な下層反射防止膜
JP2001194792A (ja) フェノール／脂環式コポリマーおよびフォトレジスト
CN102001926A (zh) 化合物,树脂,抗蚀剂组合物和用于制备抗蚀剂图案的方法
US5780566A (en) Polymers containing protected styrene and unprotected hydroxybenzyl (meth)acrylamides
EP1970367A2 (en) Method for producing hydroxyphenyl acrylate monomers and polymers
TWI227377B (en) Positive-type resist composition
JP2008045125A (ja) 極紫外線及び深紫外線用感光性高分子及びこれを含むフォトレジスト組成物
JP4291905B2 (ja) 感光性ポリマー及びそれを利用した化学増幅型レジスト組成物
WO1997027515A1 (fr) Composition de resist
US6077643A (en) Polymers and photoresist compositions
CN115536776B (zh) 一种光刻胶用树脂及其制备方法及用该树脂制得的光刻胶
JP4190834B2 (ja) レジスト組成物
KR20000052413A (ko) 하이드록시페닐 공중합체 및 이를 함유하는 포토레지스트
JP2004524565A (ja) 新規な共重合体及びフォトレジスト組成物
KR100241116B1 (ko) 포토레지스트용 공중합체 및 그 제조방법
JP2001147530A (ja) ネガ型レジスト組成物
KR0145353B1 (ko) N-치환된 술폰일옥시말레이미드 단량체를 이용한 삼원공중합체의 제조방법 및 그를 이용한 내열성 레지스트 화상형성방법
WO2011023497A1 (en) Chemically amplified photoresist composition and process for its use
Havard et al. Novel chemically amplified imaging materials containing malonate pendant groups
KR19980026830A (ko) 화학증폭형 레지스트 조성물

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20171025

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171025

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130515

Termination date: 20190716