CN102130274A - White LED light source for transparent fluorescent ceramic package - Google Patents
White LED light source for transparent fluorescent ceramic package Download PDFInfo
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- CN102130274A CN102130274A CN2010105858222A CN201010585822A CN102130274A CN 102130274 A CN102130274 A CN 102130274A CN 2010105858222 A CN2010105858222 A CN 2010105858222A CN 201010585822 A CN201010585822 A CN 201010585822A CN 102130274 A CN102130274 A CN 102130274A
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- transparent
- light source
- led chip
- sintering
- fluorescence ceramics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a white light emitting diode (LED) light source for a transparent fluorescent ceramic package. The light source consists of an LED chip, a packaging substrate, a bracket, an electrode and a transparent fluorescent ceramic packaging material, wherein the packaging substrate and the bracket are arranged in a combined mode; the LED chip is subjected to die bond in a packaging substrate die bond area and is connected to positive and negative electrodes through a gold thread; the LED chip is integrally packaged with the transparent fluorescent ceramic packaging material; the transparent fluorescent ceramic material is molded into a protruding curved emergent surface by a mold relative to the LED chip; and transparent fluorescent ceramics are formed by doping and co-firing fluorescent powder and transparent ceramic powder. The transparent ceramics have higher refractive index compared with the traditional packaging material, and the packaged LED light source has higher light extraction efficiency. Meanwhile, the transparent ceramics are superior to the traditional packaging material in heat conductivity, stability and mechanical strength, and the transparent ceramics and the fluorescent powder are doped and co-fired to realize white light function of a blue LED.
Description
Technical field
The present invention relates to a kind of white LED light source, say it is a kind of white LED light source definitely by transparent fluorescence ceramics material package.
Background technology
Current, the white light LEDs packaging process of domestic and foreign current has multiple, wherein in " blue chip+fluorescent material " packaging technology, because epoxy resin has good caking property, electrical insulating property, sealing and dielectric property and advantages such as cost is lower, easy-formation become the main flow material that LED encapsulates.But along with improving constantly of white light LEDs brightness and power, encapsulating material to LED proposes higher requirement, and the moisture absorption that epoxy resin self exists, easily aging, poor heat resistance, high temperature and short wavelength light have exposed according to defective such as easy to change down, epoxy resin also is difficult for the even doping of realization and fluorescent material, thereby influences and shorten the performance and the useful life of LED device greatly.In order to solve the problems referred to above that epoxy resin exists, organosilicon material has been subjected to domestic and international researcher's extensive concern owing to have the good transparency, resistant of high or low temperature, weatherability, insulating properties etc., is considered to the ideal material of alternate collar epoxy resins.But also there are some shortcomings in organosilicon as encapsulating material, and organosilicon does not solve the problem that fluorescent material evenly mixes, and organosilyl refractive index differs bigger with the refractive index of led chip about 1.5, be unfavorable for the output of light; In addition, though organosilicon is increasing aspect thermal endurance, the mechanical property than epoxy resin, the ability of working under adverse circumstances such as high temperature, highly corrosive is relatively poor.And because organosilyl production technology is complicated, cost is higher, currently marketed organosilicon price is very expensive, is unfavorable for the popularization and the application of white light LEDs.
Summary of the invention
In order to overcome above-mentioned defective, the present invention proposes a kind of the doping and burn the high light-emitting rate white LED light source of the transparent fluorescence ceramics encapsulation that forms altogether by high-refractive index transparent ceramic material and fluorescent material.
The present invention for the technical scheme that solves its technical problem and adopt is:
A kind of white LED light source of transparent fluorescence ceramics encapsulation, constitute by led chip, encapsulation base, support, electrode and transparent fluorescence ceramics encapsulating material, encapsulation base and holder combination are installed, led chip is solid brilliant in the encapsulation base crystal bonding area, and be connected in positive and negative electrode by gold thread, led chip is encapsulated by transparent fluorescence ceramics material monolithic, is the curved surface exiting surface of projection by mould shape corresponding to the transparent fluorescence ceramics material of led chip;
Described transparent fluorescence ceramics is mixed to burn altogether by fluorescent material and transparent ceramic powder and forms, and is divided into non-pressure sintering technology and vacuum heating-press sintering;
Non-pressure sintering technology: compression moulding and sintering process are separately carried out, earlier with powder cold moudling, molding mode is selected a kind of with in cold isostatic compaction and the wet moulding of punching block cold moudling or shop, carry out biscuiting afterwards to remove some additives, under vacuum, hydrogen or other inert gas conditions, carry out high temperature sintering again;
Vacuum heating-press sintering: moulding and sintering are finished in same operation, it is molded earlier powder to be put into mold cold, then the moulding sample is put into vacuum hotpressing stove and carry out hot pressed sintering, resulting product is put into and is carried out reprocessing under high temperature insostatic pressing (HIP) furnace high-temperature, the high pressure, interior temperature 1600-1800 ℃ of stove, argon gas condition downforce 150-200Mpa, and then the optical property of raising fluorescence transparent ceramic.
Described encapsulation base is made by high-thermal conductive metal or alloy, and the crystal bonding area territory is plane or concaveconvex structure.
Described transparent ceramic is selected high pure raw material for use, gets rid of pore by process means and obtains, and its refractive index is greater than 1.7.
Described curved surface exiting surface is regular cambered surface exiting surface or abnormal curved surface exiting surface.
Know-why of the present invention: the about 2-4 of led chip refractive index, as GaN (n=2.5) and GaP (n=3.45) all far above epoxy resin or silicone resin encapsulating material refractive index (n=1.40-1.53), refractive index difference is excessive to cause total reflection to take place, light reflected back chip internal can't effectively be derived, and the refractive index that therefore improves encapsulating material can reduce the generation of total reflection.White light LEDs assembly with blue chip/yellow YAG fluorescent material is an example, and the blue-light LED chip refractive index is 2.5, and when the refractive index of encapsulating material was promoted to 1.7 from 1.5 the time, light had taken out improved efficiency nearly 30%; Therefore, the refractive index that promotes encapsulating material reduces between chip and encapsulating material refractive index difference and reaches and be lifted out light transmittance efficiency.
Beneficial effect of the present invention: MgAl
2O
4Transparent ceramic thermal conductivity higher (17.0W/mK), be about epoxy resin and organosilyl ten times, the heat that produces in the work is passed more in time, help reducing the working temperature of fluorescent material, prolong the life-span of fluorescent material, help to reduce junction temperature of chip, thereby can improve operating current, further improve the LED luminous intensity.
MgAl
2O
4The refractive index of transparent fluorescence ceramics improves a lot than epoxy resin and organosilicon about 1.7, there are some researches show that light takes out efficient can promote nearly 30% when the refractive index of encapsulating material is promoted to 1.7 from 1.5 the time.
Because transparent fluorescence ceramics has than epoxy resin and higher thermal conductivity and the refractive index of organosilicon, can solve heat radiation and high efficiency problem simultaneously; Because ceramic material has the intensity higher than organic material, hardness, more corrosion-resistant, can increase substantially the life-span of LED goods, and for realize that the use that white light LEDs works long hours provides possibility under abominable operational environment such as high temperature, HI high impact, corrosivity.
Description of drawings:
Fig. 1 is regular cambered surface exiting surface led light source cutaway view;
Fig. 2 is an abnormal curved surface exiting surface led light source cutaway view;
Fig. 3 is an abnormal curved surface exiting surface led light source stereogram.
Indication legend in the accompanying drawing
1, encapsulation base 2, support 3, led chip 4, electrode 5, transparent fluorescence ceramics
Embodiment
Transparent fluorescence ceramics is mixed to burn altogether by fluorescent material and transparent ceramic powder and forms, and is divided into non-pressure sintering technology and vacuum heating-press sintering;
Non-pressure sintering technology: compression moulding and sintering process are separately carried out, earlier with powder cold moudling, molding mode is selected a kind of with in cold isostatic compaction and the wet moulding of punching block cold moudling or shop, carry out biscuiting afterwards to remove some additives, under vacuum, hydrogen or other inert gas conditions, carry out high temperature sintering again;
Vacuum heating-press sintering: moulding and sintering are finished in same operation, it is molded earlier powder to be put into mold cold, then the moulding sample is put into vacuum hotpressing stove and carry out hot pressed sintering, resulting product is put into and is carried out reprocessing under high temperature insostatic pressing (HIP) furnace high-temperature, the high pressure, interior temperature 1600-1800 ℃ of stove, argon gas condition downforce 150-200Mpa, and then the optical property of raising fluorescence transparent ceramic.
Encapsulation base is made by high-thermal conductive metal or alloy, and its bottom surface is a thermal conductive surface, and crystal bonding area can be provided with concave structure.
Transparent ceramic is selected high pure raw material for use, gets rid of pore by process means and obtains, and its refractive index is greater than 1.7.
Embodiment 1: a kind of white LED light source of transparent fluorescence ceramics encapsulation, constitute by encapsulation base 1, support 2, led chip 3, electrode 4 and transparent fluorescence ceramics 5 encapsulating materials, encapsulation base and support cooperate to be installed, led chip is solid brilliant in the encapsulation base crystal bonding area, and be connected in positive and negative electrode by gold thread, led chip is encapsulated by transparent fluorescence ceramics material monolithic, is the curved surface exiting surface of projection by mould shape corresponding to the transparent fluorescence ceramics material of led chip.As Fig. 1 exiting surface is regular cambered surface, and regular cambered surface exiting surface can be used for the not high occasion of light distribution requirements, needs secondary light-distribution just can reach corresponding requirements usually for lightings such as road, tunnels; Structure and single encapsulated LED light source of tradition are similar, under the similar situation of structure conventional resins material or organosilicon material are changed and make MgAl
2O
4Transparent fluorescence ceramics can effectively improve and get optical efficiency and heat dispersion.
Embodiment 2: exiting surface is set to the abnormal curved surface exiting surface, thereby the abnormal curved surface exiting surface is the light distribution requirements that secondary light-distribution lens and led light source integrated design is applicable to special occasions.Led light source can be realized different light distribution requirements by adjusting curve form shown in Fig. 2,3, as road lighting, tunnel illumination and asymmetric eccentric luminous intensity distribution etc.
Claims (4)
1. the white LED light source of a transparent fluorescence ceramics encapsulation, it is characterized in that: constitute by led chip, encapsulation base, support, electrode and transparent fluorescence ceramics encapsulating material, encapsulation base and holder combination are installed, led chip is solid brilliant in the encapsulation base crystal bonding area, and be connected in positive and negative electrode by gold thread, led chip is encapsulated by transparent fluorescence ceramics material monolithic, is the curved surface exiting surface of projection by mould shape corresponding to the transparent fluorescence ceramics material of led chip;
Described transparent fluorescence ceramics is mixed to burn altogether by fluorescent material and transparent ceramic powder and forms, and is divided into non-pressure sintering technology and vacuum heating-press sintering;
Non-pressure sintering technology: compression moulding and sintering process are separately carried out, earlier with powder cold moudling, molding mode is selected a kind of with in cold isostatic compaction and the wet moulding of punching block cold moudling or shop, carry out biscuiting afterwards to remove some additives, under vacuum, hydrogen or other inert gas conditions, carry out high temperature sintering again;
Vacuum heating-press sintering: moulding and sintering are finished in same operation, it is molded earlier powder to be put into mold cold, then the moulding sample is put into vacuum hotpressing stove and carry out hot pressed sintering, resulting product is put into and is carried out reprocessing under high temperature insostatic pressing (HIP) furnace high-temperature, the high pressure, interior temperature 1600-1800 ℃ of stove, argon gas condition downforce 150-200Mpa, and then the optical property of raising fluorescence transparent ceramic.
2. the white LED light source of a kind of transparent fluorescence ceramics encapsulation according to claim 1, it is characterized in that: described encapsulation base is made by high-thermal conductive metal or alloy, and the crystal bonding area territory is plane or concaveconvex structure.
3. the white LED light source of a kind of transparent fluorescence ceramics encapsulation according to claim 1, it is characterized in that: described transparent ceramic is selected high pure raw material for use, gets rid of pore by process means and obtains, and its refractive index is greater than 1.7.
4. the white LED light source of a kind of transparent fluorescence ceramics encapsulation according to claim 1, it is characterized in that: described curved surface exiting surface is regular cambered surface exiting surface or abnormal curved surface exiting surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105858222A CN102130274A (en) | 2010-12-14 | 2010-12-14 | White LED light source for transparent fluorescent ceramic package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105858222A CN102130274A (en) | 2010-12-14 | 2010-12-14 | White LED light source for transparent fluorescent ceramic package |
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| CN102130274A true CN102130274A (en) | 2011-07-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010105858222A Pending CN102130274A (en) | 2010-12-14 | 2010-12-14 | White LED light source for transparent fluorescent ceramic package |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324424A (en) * | 2011-09-22 | 2012-01-18 | 华南师范大学 | White-light LED (Light Emitting Diode) packaged by fluorescent transparent ceramic lens |
| CN102569604A (en) * | 2011-10-27 | 2012-07-11 | 深圳市灏天光电有限公司 | Hidden pin high-power LED (light-emitting diode) bracket and packaging structure and packaging process thereof |
| US20120178193A1 (en) * | 2009-09-30 | 2012-07-12 | Bright Crystals Technology, Inc. | Method for manufacturing led with transparent ceramics |
| CN102951903A (en) * | 2011-08-19 | 2013-03-06 | 深圳富泰宏精密工业有限公司 | Ceramic body and preparation method thereof, and electronic device adopting the ceramic body |
| CN106098910A (en) * | 2016-08-24 | 2016-11-09 | 苏州大学 | Based on fluorescence ceramics and polarized white light LED of double-layer nanometer optical grating construction |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060255716A1 (en) * | 2005-05-16 | 2006-11-16 | Koito Manufacturing Co., Ltd. | Light emitting apparatus and vehicle lamp |
-
2010
- 2010-12-14 CN CN2010105858222A patent/CN102130274A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060255716A1 (en) * | 2005-05-16 | 2006-11-16 | Koito Manufacturing Co., Ltd. | Light emitting apparatus and vehicle lamp |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120178193A1 (en) * | 2009-09-30 | 2012-07-12 | Bright Crystals Technology, Inc. | Method for manufacturing led with transparent ceramics |
| US8932887B2 (en) * | 2009-09-30 | 2015-01-13 | Bright Crystals Technology, Inc. | Method for manufacturing LED with transparent ceramics |
| CN102951903A (en) * | 2011-08-19 | 2013-03-06 | 深圳富泰宏精密工业有限公司 | Ceramic body and preparation method thereof, and electronic device adopting the ceramic body |
| CN102324424A (en) * | 2011-09-22 | 2012-01-18 | 华南师范大学 | White-light LED (Light Emitting Diode) packaged by fluorescent transparent ceramic lens |
| CN102569604A (en) * | 2011-10-27 | 2012-07-11 | 深圳市灏天光电有限公司 | Hidden pin high-power LED (light-emitting diode) bracket and packaging structure and packaging process thereof |
| CN102569604B (en) * | 2011-10-27 | 2013-11-06 | 深圳市灏天光电有限公司 | Hidden pin high-power LED (light-emitting diode) bracket and packaging structure and packaging process thereof |
| CN106098910A (en) * | 2016-08-24 | 2016-11-09 | 苏州大学 | Based on fluorescence ceramics and polarized white light LED of double-layer nanometer optical grating construction |
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| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jiangsu Yangtze Electromechanical Science & Technology Co.,Ltd. Assignor: Huang Jinlu Contract record no.: 2012320000247 Denomination of invention: White LED light source for transparent fluorescent ceramic package License type: Exclusive License Open date: 20110720 Record date: 20120319 |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110720 |