CN102222758A - White light LED (Light Emitting Diode) light source based on transparent fluorescent ceramic - Google Patents

White light LED (Light Emitting Diode) light source based on transparent fluorescent ceramic Download PDF

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Publication number
CN102222758A
CN102222758A CN2011101570579A CN201110157057A CN102222758A CN 102222758 A CN102222758 A CN 102222758A CN 2011101570579 A CN2011101570579 A CN 2011101570579A CN 201110157057 A CN201110157057 A CN 201110157057A CN 102222758 A CN102222758 A CN 102222758A
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China
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transparent
ceramic
light
light source
led chip
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Pending
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CN2011101570579A
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Chinese (zh)
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徐晓峰
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Individual
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Priority to CN2011101570579A priority Critical patent/CN102222758A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

The invention discloses a white light LED (Light Emitting Diode) light source based on transparent fluorescent ceramic, which consists of an LED chip, a packaging substrate, a bracket, an electrode and a transparent fluorescent ceramic packaging material, wherein the packaging substrate is combined with the bracket; the LED chip is die-bonded in a die bonding area of the packaging substrate, and is connected to positive and negative electrodes via a gold wire; the LED chip is integrally packaged by the transparent fluorescent ceramic material, and the transparent fluorescent ceramic material is shaped as a protruded curved-surface light-emitting surface corresponding to the LED chip by a mould; and the transparent fluorescent ceramic is formed by doping and co-firing the fluorescent powder and the transparent ceramic powder. Compared with the conventional packaging material, the transparent ceramic has higher refractive index, and the LED light source packaged by the transparent ceramic has higher light extraction efficiency; meanwhile the transparent ceramic is superior to the conventional packaging material in terms of heat conductive coefficient, stability and mechanical strength, and the while light function of a blue light LED can be realized through doping and co-firing the transparent ceramic and the fluorescent powder.

Description

A kind of white LED light source based on transparent fluorescence ceramics
Technical field
The present invention relates to a kind of white LED light source, say it is a kind of white LED light source definitely based on transparent fluorescence ceramics.
Background technology
Current, the white light LEDs packaging process of domestic and foreign current has multiple, wherein in " blue chip+fluorescent material " packaging technology, because epoxy resin has good caking property, electrical insulating property, sealing and dielectric property and advantages such as cost is lower, easy-formation become the main flow material that LED encapsulates.But along with improving constantly of white light LEDs brightness and power, encapsulating material to LED proposes higher requirement, and the moisture absorption that epoxy resin self exists, easily aging, poor heat resistance, high temperature and short wavelength light have exposed according to defective such as easy to change down, epoxy resin also is difficult for the even doping of realization and fluorescent material, thereby influences and shorten the performance and the useful life of LED device greatly.In order to solve the problems referred to above that epoxy resin exists, organosilicon material has been subjected to domestic and international researcher's extensive concern owing to have the good transparency, resistant of high or low temperature, weatherability, insulating properties etc., is considered to the ideal material of alternate collar epoxy resins.But also there are some shortcomings in organosilicon as encapsulating material, and organosilicon does not solve the problem that fluorescent material evenly mixes, and organosilyl refractive index differs bigger with the refractive index of led chip about 1.5, be unfavorable for the output of light; In addition, though organosilicon is increasing aspect thermal endurance, the mechanical property than epoxy resin, the ability of working under adverse circumstances such as high temperature, highly corrosive is relatively poor.And because organosilyl production technology is complicated, cost is higher, currently marketed organosilicon price is very expensive, is unfavorable for the popularization and the application of white light LEDs.
Summary of the invention
In order to overcome above-mentioned defective, the present invention proposes a kind of the doping and burn the high light-emitting rate white LED light source of the transparent fluorescence ceramics encapsulation that forms altogether by high-refractive index transparent ceramic material and fluorescent material.
The present invention for the technical scheme that solves its technical problem and adopt is:
A kind of white LED light source based on transparent fluorescence ceramics is made of encapsulation base, support, electrode, led chip and transparent fluorescence ceramics encapsulating material, encapsulation base and holder combination are installed, led chip is solid brilliant in the encapsulation base crystal bonding area, and be connected in positive and negative electrode by gold thread, led chip is encapsulated by transparent fluorescence ceramics material monolithic, is the curved surface exiting surface of projection by mould shape corresponding to the transparent fluorescence ceramics material of led chip;
Described transparent fluorescence ceramics is mixed to burn altogether by fluorescent material and transparent ceramic powder and forms, and is divided into non-pressure sintering technology and vacuum heating-press sintering;
Non-pressure sintering technology: compression moulding and sintering process are separately carried out, earlier with powder cold moudling, molding mode is selected a kind of with in cold isostatic compaction and the wet moulding of punching block cold moudling or shop, carry out biscuiting afterwards to remove some additives, under vacuum, hydrogen or other inert gas conditions, carry out high temperature sintering again;
Vacuum heating-press sintering: moulding and sintering are finished in same operation, it is molded earlier powder to be put into mold cold, then the moulding sample is put into vacuum hotpressing stove and carry out hot pressed sintering, resulting product is put into and is carried out reprocessing under high temperature insostatic pressing (HIP) furnace high-temperature, the high pressure, interior temperature 1600-1800 ℃ of stove, argon gas condition downforce 150-200Mpa, and then the optical property of raising fluorescence transparent ceramic.
Described encapsulation base is made by high-thermal conductive metal or alloy, and the crystal bonding area territory is plane or concaveconvex structure.
Described transparent ceramic is selected high pure raw material for use, gets rid of pore by process means and obtains, and its refractive index is greater than 1.7.
Described curved surface exiting surface is regular cambered surface exiting surface or abnormal curved surface exiting surface.
Know-why of the present invention: the about 2-4 of led chip refractive index, as GaN (n=2.5) and GaP (n=3.45) all far above epoxy resin or silicone resin encapsulating material refractive index (n=1.40-1.53), refractive index difference is excessive to cause total reflection to take place, light reflected back chip internal can't effectively be derived, and the refractive index that therefore improves encapsulating material can reduce the generation of total reflection.White light LEDs assembly with blue chip/yellow YAG fluorescent material is an example, and the blue-light LED chip refractive index is 2.5, and when the refractive index of encapsulating material was promoted to 1.7 from 1.5 the time, light had taken out improved efficiency nearly 30%; Therefore, the refractive index that promotes encapsulating material reduces between chip and encapsulating material refractive index difference and reaches and be lifted out light transmittance efficiency.
Beneficial effect of the present invention: MgAl 2O 4Transparent ceramic thermal conductivity higher (17.0W/mK), be about epoxy resin and organosilyl ten times, the heat that produces in the work is passed more in time, help reducing the working temperature of fluorescent material, prolong the life-span of fluorescent material, help to reduce junction temperature of chip, thereby can improve operating current, further improve the LED luminous intensity.
MgAl 2O 4The refractive index of transparent fluorescence ceramics improves a lot than epoxy resin and organosilicon about 1.7, there are some researches show that light takes out efficient can promote nearly 30% when the refractive index of encapsulating material is promoted to 1.7 from 1.5 the time.
Because transparent fluorescence ceramics has than epoxy resin and higher thermal conductivity and the refractive index of organosilicon, can solve heat radiation and high efficiency problem simultaneously; Because ceramic material has the intensity higher than organic material, hardness, more corrosion-resistant, can increase substantially the life-span of LED goods, and for realize that the use that white light LEDs works long hours provides possibility under abominable operational environment such as high temperature, HI high impact, corrosivity.
Description of drawings:
Fig. 1 is regular cambered surface exiting surface led light source cutaway view;
Fig. 2 is an abnormal curved surface exiting surface led light source cutaway view;
Indication legend in the accompanying drawing
1, encapsulation base 2, support 3, led chip 4, electrode 5, transparent fluorescence ceramics
Embodiment
Transparent fluorescence ceramics is mixed to burn altogether by fluorescent material and transparent ceramic powder and forms, and is divided into non-pressure sintering technology and vacuum heating-press sintering;
Non-pressure sintering technology: compression moulding and sintering process are separately carried out, earlier with powder cold moudling, molding mode is selected a kind of with in cold isostatic compaction and the wet moulding of punching block cold moudling or shop, carry out biscuiting afterwards to remove some additives, under vacuum, hydrogen or other inert gas conditions, carry out high temperature sintering again;
Vacuum heating-press sintering: moulding and sintering are finished in same operation, it is molded earlier powder to be put into mold cold, then the moulding sample is put into vacuum hotpressing stove and carry out hot pressed sintering, resulting product is put into and is carried out reprocessing under high temperature insostatic pressing (HIP) furnace high-temperature, the high pressure, interior temperature 1600-1800 ℃ of stove, argon gas condition downforce 150-200Mpa, and then the optical property of raising fluorescence transparent ceramic.
Encapsulation base is made by high-thermal conductive metal or alloy, and its bottom surface is a thermal conductive surface, and crystal bonding area can be provided with concave structure.
Transparent ceramic is selected high pure raw material for use, gets rid of pore by process means and obtains, and its refractive index is greater than 1.7.
Embodiment 1: a kind of white LED light source based on transparent fluorescence ceramics, constitute by encapsulation base 1, support 2, led chip 3, electrode 4 and transparent fluorescence ceramics 5 encapsulating materials, encapsulation base and support cooperate to be installed, led chip is solid brilliant in the encapsulation base crystal bonding area, and be connected in positive and negative electrode by gold thread, led chip is encapsulated by transparent fluorescence ceramics material monolithic, is the curved surface exiting surface of projection by mould shape corresponding to the transparent fluorescence ceramics material of led chip.As Fig. 1 exiting surface is regular cambered surface, and regular cambered surface exiting surface can be used for the not high occasion of light distribution requirements, needs secondary light-distribution just can reach corresponding requirements usually for lightings such as road, tunnels; Structure and single encapsulated LED light source of tradition are similar, under the similar situation of structure conventional resins material or organosilicon material are changed and make MgAl 2O 4Transparent fluorescence ceramics can effectively improve and get optical efficiency and heat dispersion.
Embodiment 2: exiting surface is set to the abnormal curved surface exiting surface, thereby the abnormal curved surface exiting surface is the light distribution requirements that secondary light-distribution lens and led light source integrated design is applicable to special occasions.Led light source can be realized different light distribution requirements by adjusting curve form shown in Fig. 2,3, as road lighting, tunnel illumination and asymmetric eccentric luminous intensity distribution etc.

Claims (4)

1. white LED light source based on transparent fluorescence ceramics, it is characterized in that: constitute by encapsulation base, support, electrode, led chip and transparent fluorescence ceramics, encapsulation base and holder combination are installed, led chip is solid brilliant in the encapsulation base crystal bonding area, and be connected in positive and negative electrode by gold thread, led chip is encapsulated by transparent fluorescence ceramics material monolithic, is the curved surface exiting surface of projection by mould shape corresponding to the transparent fluorescence ceramics material of led chip;
Described transparent fluorescence ceramics is mixed to burn altogether by fluorescent material and transparent ceramic powder and forms, and is divided into non-pressure sintering technology and vacuum heating-press sintering;
Non-pressure sintering technology: compression moulding and sintering process are separately carried out, earlier with powder cold moudling, molding mode is selected a kind of with in cold isostatic compaction and the wet moulding of punching block cold moudling or shop, carry out biscuiting afterwards to remove some additives, under vacuum, hydrogen or other inert gas conditions, carry out high temperature sintering again;
Vacuum heating-press sintering: moulding and sintering are finished in same operation, it is molded earlier powder to be put into mold cold, then the moulding sample is put into vacuum hotpressing stove and carry out hot pressed sintering, resulting product is put into and is carried out reprocessing under high temperature insostatic pressing (HIP) furnace high-temperature, the high pressure, interior temperature 1600-1800 ℃ of stove, argon gas condition downforce 150-200Mpa, and then the optical property of raising fluorescence transparent ceramic.
2. a kind of white LED light source according to claim 1 based on transparent fluorescence ceramics, it is characterized in that: described encapsulation base is made by high-thermal conductive metal or alloy, and the crystal bonding area territory is plane or concaveconvex structure.
3. a kind of white LED light source according to claim 1 based on transparent fluorescence ceramics, it is characterized in that: described transparent ceramic is selected high pure raw material for use, gets rid of pore by process means and obtains, and its refractive index is greater than 1.7.
4. a kind of white LED light source based on transparent fluorescence ceramics according to claim 1 is characterized in that: described curved surface exiting surface is regular cambered surface exiting surface or abnormal curved surface exiting surface.
CN2011101570579A 2011-06-08 2011-06-08 White light LED (Light Emitting Diode) light source based on transparent fluorescent ceramic Pending CN102222758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011101570579A CN102222758A (en) 2011-06-08 2011-06-08 White light LED (Light Emitting Diode) light source based on transparent fluorescent ceramic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011101570579A CN102222758A (en) 2011-06-08 2011-06-08 White light LED (Light Emitting Diode) light source based on transparent fluorescent ceramic

Publications (1)

Publication Number Publication Date
CN102222758A true CN102222758A (en) 2011-10-19

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Application Number Title Priority Date Filing Date
CN2011101570579A Pending CN102222758A (en) 2011-06-08 2011-06-08 White light LED (Light Emitting Diode) light source based on transparent fluorescent ceramic

Country Status (1)

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CN (1) CN102222758A (en)

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Application publication date: 20111019