CN203179939U - White light emitting diode - Google Patents
White light emitting diode Download PDFInfo
- Publication number
- CN203179939U CN203179939U CN2012206010018U CN201220601001U CN203179939U CN 203179939 U CN203179939 U CN 203179939U CN 2012206010018 U CN2012206010018 U CN 2012206010018U CN 201220601001 U CN201220601001 U CN 201220601001U CN 203179939 U CN203179939 U CN 203179939U
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- CN
- China
- Prior art keywords
- white light
- light emitting
- emitting diode
- luminescence chip
- transparent substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The utility model discloses a white light emitting diode comprising the following elements: a light transmission substrate provided with at least two electrodes; at least one light emitting chip arranged on the light transmission substrate and electrically connected with at least two electrode; a first phosphor layer arranged on one side of light emitting chip far away from the light transmission substrate, and for converting emission light of one side of the light emitting chip into white light; and a second phosphor layer arranged on the other side of the light emitting chip close to the light transmission substrate, and for converting emission light of the other side of the light emitting chip into the white light. By employing the mode, the white light emitting diode can obtain white light emitting effect in 360 degrees.
Description
Technical field
The utility model relates to a kind of semiconductor device, relates in particular to a kind of white light emitting diode.
Background technology
Because light-emitting diode has advantages such as low power consumption, lower calorific value, life-span length; Therefore, in fields such as electronics demonstration and illuminations, light-emitting diode is replacing energy consumption height, short traditional lighting light fixture of life-span gradually.
Existing white light emitting diode generally comprises substrate, luminescence chip and phosphor powder layer.Positive and negative electrode is set on the substrate, and luminescence chip is fixed to substrate and is connected to positive and negative electrode respectively by lead; Phosphor powder layer is coated and fixed to the luminescence chip of substrate.To this light-emitting diode making alive, electric current makes luminescence chip send exciting light through lead.The stimulated luminescence that the part arrival phosphor powder layer of the exciting light of the shorter wavelength that luminescence chip sends and fluorescence excitation bisque send longer wavelength, another part exciting light and stimulated luminescence carry out colour mixture makes light-emitting diodes be in control white emergent light.
Yet above-mentioned light-emitting diode only arranges the positive outgoing white light of luminescence chip from substrate, and the angle of emergent light has been limited to the scope of application of white light emitting diode greatly less than 180 °.
The utility model content
The technical problem that the utility model mainly solves provides a kind of 360 ° of luminous white light emitting diodes.
For solving the problems of the technologies described above, the technical scheme that the utility model adopts is: a kind of white light emitting diode is provided, comprises: a transparent substrates arranges at least two electrodes on the transparent substrates; At least one luminescence chip, luminescence chip are arranged on the transparent substrates and with at least two electrodes and electrically connect; First phosphor powder layer, first phosphor powder layer are arranged at luminescence chip away from a side of transparent substrates, convert white light to the emergent light with a side of luminescence chip; Second phosphor powder layer, second phosphor powder layer are arranged at luminescence chip near the opposite side of transparent substrates, convert white light to the emergent light with the opposite side of luminescence chip.
Wherein, transparent substrates comprise first surface that luminescence chip is set, with first surface opposing second surface, and the side that connects first surface and second surface; Second phosphor powder layer is to be arranged on the first surface, to be arranged on second surface and the side and to be arranged at any one or its combination in the transparent substrates.
Wherein, first phosphor powder layer is the resin bed of mixed fluorescent powder.
Wherein, comprise highly heat-conductive material or infrared radiant material in the transparent substrates.
Wherein, also be provided for the high heat conducting film of thermo-contact luminescence chip on the first surface.
Wherein, high heat conducting film is diamond-like carbon film-coating, aluminium nitride plated film, plating aluminium oxide film, silica plated film, silicon nitride plated film or metal film.
Wherein, the mode of luminescence chip, low temperature glass powder sintering bonding by transparent glue or Direct Bonding is connected to first surface.
Wherein, second surface has the surface micro-structure of handling or rubbing and form through sandblast, photonic crystal, to obtain higher amount of light.
Wherein, second surface applies the low temperature infrared radiant material.
Wherein, electrode is made by one or more combination in any in silver, aluminium, nickel, chromium, titanium, copper, the gold.
The beneficial effects of the utility model are: the situation that is different from prior art, the luminescence chip of the utility model white light emitting diode is arranged on the transparent substrates, and the both sides of luminescence chip cover first and second phosphor powder layer respectively, thereby the emergent light of guaranteeing the both sides of luminescence chip all can convert white light to; Thereby make white light emitting diode obtain 360 ° outgoing white light effect.
Description of drawings
Fig. 1 is the front view of the utility model white light emitting diode first embodiment;
Fig. 2 is the front view of the utility model white light emitting diode second embodiment;
Fig. 3 is the front view of the utility model white light emitting diode the 3rd embodiment;
Fig. 4 is the front view of the utility model white light emitting diode the 4th embodiment;
Fig. 5 is the front view of the utility model white light emitting diode the 5th embodiment.
Embodiment
Consult Fig. 1, the utility model first embodiment white light emitting diode 100 comprises transparent substrates 10, luminescence chip 11, first phosphor powder layer 12, second phosphor powder layer (not shown) and electrode 14.
The visible light of transparent substrates 10 transmissive all wavelengths, for example, transparent substrates 10 can be glass substrate, transparent ceramic substrate or transparent heat-conducting plastic substrate etc.Transparent substrates 10 roughly is tabular, comprises two first surface 101 and the second surfaces 102 that arrange relatively, and the side 103 that connects first surface 101 and second surface 102.
First phosphor powder layer 12 is to be arranged at luminescence chip 11 away from a side of transparent substrates 10, converts white light to the emergent light with a side of luminescence chip 11.In other words, first phosphor powder layer 12 makes the emergent light of luminescence chip 11 in 180 ° of scopes of this side convert white light to from the side covering luminescence chip 11 away from transparent substrates 10.Preferably, first phosphor powder layer 12 is resin beds of mixed fluorescent powder, after luminescence chip 11 and electrode 12 are arranged on the transparent substrates 10, the side of first phosphor powder layer, 12 self-luminous chips 11 away from transparent substrates 10 is covered luminescence chip 11 again.
Second phosphor powder layer is arranged at luminescence chip 11 near the opposite side of transparent substrates 10, and the emergent light with the opposite side of luminescence chip 11 converts white light to.Particularly, second phosphor powder layer can be arranged in the transparent substrates 10 and/or be arranged on the surface of transparent substrates 10.The lip-deep situation that second phosphor powder layer is arranged at transparent substrates 10 comprises and is arranged at first surface 101, is arranged at second surface 102 and side 103, and is arranged at first surface 101,103 3 kinds of situations of second surface 102 and side.Emergent light in 180 ° of scopes of luminescence chip 11 opposite sides is converted to white light with emergent light behind transparent substrates 10 and second phosphor powder layer.
Please refer to Fig. 2, the utility model second embodiment white light emitting diode 200 comprises transparent substrates 20, luminescence chip 21, first phosphor powder layer 22, second phosphor powder layer (not shown) and electrode 14.Transparent substrates 20 comprises two first surface 101 and the second surfaces 102 that arrange relatively, and the side 103 that connects first surface 101 and second surface 102.The structure of said elements and the first embodiment white light emitting diode 100, function, formation are basic identical, repeat no more.
Compare with the first embodiment white light emitting diode 100 shown in Figure 1, present embodiment white light emitting diode 200 further comprises high heat conducting film 25.High heat conducting film 25 is arranged on the first surface 201 of transparent substrates 20.High heat conducting film 25 and luminescence chip 21 thermo-contacts are used for the heat that luminescence chip 21 work produce is derived fast.High heat conducting film 25 can be DLC(Diamond-like carbon, diamond like carbon) the high heat conduction rete of plated film, metal film or other materials etc.The high heat conduction rete of other materials comprises aluminium nitride plated film, plating aluminium oxide film, silica plated film, silicon nitride plated film etc.
In order to improve the heat-sinking capability of white light emitting diode 200, can also in transparent substrates 20, mix highly heat-conductive material or infrared radiant material etc.
Please refer to Fig. 3, the utility model the 3rd embodiment white light emitting diode 300 comprises transparent substrates 30, luminescence chip 31, first phosphor powder layer 32, second phosphor powder layer (not shown) and electrode 34.Transparent substrates 30 comprises two first surface 301 and the second surfaces 302 that arrange relatively, and the side 303 that connects first surface 301 and second surface 302.
Compare with the first embodiment white light emitting diode 100, the second surface 302 of present embodiment white light emitting diode 300 has surface micro-structure (not indicating).Surface micro-structure can be formed by modes such as sandblast, photonic crystal processing and frictions, and the setting of surface micro-structure can reduce the total reflection effect of transparent substrates 30, obtains higher amount of light, and then improves the luminous intensity that of white light emitting diode 300.
Please refer to Fig. 4, the utility model the 4th embodiment white light emitting diode 400 comprises transparent substrates 40, luminescence chip 41, first phosphor powder layer 42, second phosphor powder layer (not shown) and electrode 44.Transparent substrates 40 comprises two first surface 401 and the second surfaces 402 that arrange relatively, and the side 403 that connects first surface 401 and second surface 402.
Compare with the 3rd embodiment white light emitting diode 300, present embodiment white light emitting diode 400 further comprises infrared radiant material layer 46.Infrared radiant material layer 46 is coated on the second surface 302 of transparent substrates 40, further improves the heat-sinking capability of white light emitting diode 400.
Please refer to Fig. 5, the utility model the 5th embodiment white light emitting diode 500 comprises transparent substrates 50, luminescence chip 51, first phosphor powder layer 52, second phosphor powder layer (not shown), electrode 54 and infrared radiant material layer 56.Transparent substrates 50 comprises two first surface 501 and the second surfaces 502 that arrange relatively, and the side 503 that connects first surface 501 and second surface 502.
Compare with the 4th embodiment white light emitting diode 500, present embodiment white light emitting diode 500 further comprises high heat conducting film 55.High heat conducting film 55 is arranged on the first surface 501 of transparent substrates 50.High heat conducting film 55 and luminescence chip 51 thermo-contacts are used for the heat that luminescence chip 51 work produce is derived fast.High heat conducting film 25 is identical among the high heat conducting film 55 of present embodiment and second embodiment.
Be different from prior art; The utility model white light emitting diode 100,200,300,400,500 luminescence chip 11,21,31,41,51 are arranged on the transparent substrates 10,20,30,40,50, and the both sides of luminescence chip cover first and second phosphor powder layer respectively, thereby the emergent light of guaranteeing the both sides of luminescence chip all can convert white light to; Thereby make white light emitting diode obtain 360 ° outgoing white light effect.。
The above only is execution mode of the present utility model; be not so limit claim of the present utility model; every equivalent structure or equivalent flow process conversion that utilizes the utility model specification and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present utility model.
Claims (8)
1. a white light emitting diode is characterized in that, described white light emitting diode comprises:
One transparent substrates arranges at least two electrodes on the described transparent substrates;
At least one luminescence chip, described luminescence chip are arranged on the described transparent substrates and with described two electrodes electrically connect at least;
First phosphor powder layer, described first phosphor powder layer are arranged at described luminescence chip away from a side of described transparent substrates, convert white light to the emergent light with the described side of described luminescence chip;
Second phosphor powder layer, described second phosphor powder layer are arranged at described luminescence chip near the opposite side of described transparent substrates, convert white light to the emergent light with the described opposite side of described luminescence chip.
2. white light emitting diode according to claim 1, it is characterized in that, described transparent substrates comprise first surface that described luminescence chip is set, with described first surface opposing second surface, and the side that connects described first surface and described second surface; Described second phosphor powder layer is to be arranged on the described first surface, to be arranged on described second surface and the described side and to be arranged at any one or its combination in the described transparent substrates.
3. white light emitting diode according to claim 2 is characterized in that, comprises highly heat-conductive material or infrared radiant material in the described transparent substrates.
4. white light emitting diode according to claim 2 is characterized in that, also is provided for the high heat conducting film of the described luminescence chip of thermo-contact on the described first surface.
5. white light emitting diode according to claim 4 is characterized in that, described high heat conducting film is diamond-like carbon film-coating, aluminium nitride plated film, plating aluminium oxide film, silica plated film, silicon nitride plated film or metal film.
6. white light emitting diode according to claim 2 is characterized in that, described luminescence chip is bonding by transparent glue, the mode of low temperature glass powder sintering or Direct Bonding is connected to described first surface.
7. white light emitting diode according to claim 2 is characterized in that, described second surface has the surface micro-structure of handling or rubbing and form through sandblast, photonic crystal, to obtain higher amount of light.
8. white light emitting diode according to claim 2 is characterized in that, described second surface applies the low temperature infrared radiant material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012206010018U CN203179939U (en) | 2012-11-14 | 2012-11-14 | White light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012206010018U CN203179939U (en) | 2012-11-14 | 2012-11-14 | White light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203179939U true CN203179939U (en) | 2013-09-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012206010018U Expired - Lifetime CN203179939U (en) | 2012-11-14 | 2012-11-14 | White light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203179939U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000786A (en) * | 2012-11-14 | 2013-03-27 | 深圳大学 | White light emitting diode |
| CN103972369A (en) * | 2014-05-26 | 2014-08-06 | 苏州东山精密制造股份有限公司 | LED (Light Emitting Diode) lamp bar and manufacturing method thereof |
| CN105235476A (en) * | 2015-08-28 | 2016-01-13 | 哈尔滨固泰电子有限责任公司 | Rear windshield glass carrying with brake lamp and mounting method |
-
2012
- 2012-11-14 CN CN2012206010018U patent/CN203179939U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000786A (en) * | 2012-11-14 | 2013-03-27 | 深圳大学 | White light emitting diode |
| CN103000786B (en) * | 2012-11-14 | 2016-01-13 | 深圳大学 | White light emitting diode |
| CN103972369A (en) * | 2014-05-26 | 2014-08-06 | 苏州东山精密制造股份有限公司 | LED (Light Emitting Diode) lamp bar and manufacturing method thereof |
| CN103972369B (en) * | 2014-05-26 | 2017-01-18 | 苏州东山精密制造股份有限公司 | LED (Light Emitting Diode) lamp bar and manufacturing method thereof |
| CN105235476A (en) * | 2015-08-28 | 2016-01-13 | 哈尔滨固泰电子有限责任公司 | Rear windshield glass carrying with brake lamp and mounting method |
| CN105235476B (en) * | 2015-08-28 | 2019-07-05 | 成都固泰电子有限责任公司 | The wind shield glass wind shield and installation method of included brake lamp |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130904 |