CN101338866A - Low light attenuation white luminous diode - Google Patents
Low light attenuation white luminous diode Download PDFInfo
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- CN101338866A CN101338866A CNA2008101202170A CN200810120217A CN101338866A CN 101338866 A CN101338866 A CN 101338866A CN A2008101202170 A CNA2008101202170 A CN A2008101202170A CN 200810120217 A CN200810120217 A CN 200810120217A CN 101338866 A CN101338866 A CN 101338866A
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- low light
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Abstract
The invention discloses a white light emitting diode with low light decay which comprises a support, a LED wafer and a fluorescent package body. The upper end surface of the support is equipped with a concave package cavity. The LED wafer is positioned on the bottom wall of the package cavity. The fluorescent package body is positioned and sealed on the package cavity. The fluorescent package body contains the fluorescent powder which can coordinate with the LED wafer to generate the white light. The support is equipped with at least a first electrode and a second electrode. The first electrode and the second electrode are electrically connected with the LED wafer. A light transmission sheet is positioned between the fluorescent package body and the LED wafer for separating the fluorescent package body and the LED wafer. A heat insulation and light transmission layer is positioned between the light transmission sheet and the LED wafer. The invention has the advantages that: the LED wafer is separated by the light transmission sheet and the heat insulation and light transmission layer, which can greatly reduce the heat generated from the LED wafer to transfer to the fluorescent package body, solve the problem of aging and yellowing caused by the overheating of the fluorescent package body, and enable the light decay of the product to greatly decrease. Moreover, the invention has the advantages of high lightness, long service life, convenient assembly and lower processing cost.
Description
Technical field
The present invention relates to a kind of light emitting diode, specifically be meant the light emitting diode that a kind of brightness decay is slow.
Background technology
Light emitting diode (Light Emitting Diode; LED) have power saving, light and handy and life-span and characteristic such as grow, reached at present the target of high briliancy, multicolor and high-luminous-efficiency, also cast more turn of the market simultaneously for consumption electronic products and related application commodity, in the flat-panel screens product, LED has become the main application market of mobile phone backlight, in future, LED will make the main shaft of development towards large scale flat-panel screens backlight, and be the target of effort with high briliancy, multicolor and high-luminous-efficiency.At present, the light emitting diode that turns white is to use very wide a kind of light emitting diode at lighting field, its monochromatic light that sends by wafer excites the luminous white light that produces of the fluorescence packaging body that is mixed with fluorescent material, the encapsulating structure of traditional white hair optical diode is the wafer surface that directly the fluorescence packaging body is covered, fluorescent glue is aging, yellow but the heat that wafer produces in the long-term work process can make, thereby make that the brightness decay of white hair optical diode is very fast, service life is shorter.
Summary of the invention
The objective of the invention is in order to overcome the shortcoming and defect that prior art exists, and a kind of low light attenuation white luminous diode is provided.
For achieving the above object, technical scheme of the present invention is, include support, the LED wafer, the fluorescence packaging body, described support upper surface is provided with the package cavity of indent, described LED wafer is installed on the diapire of this package cavity, be packaged with the fluorescence packaging body on it, this fluorescence packaging body contains the fluorescent material that can have LED wafer coupling to produce white light, at least be provided with first electrode and second electrode on the described support, this first electrode and second electrode are electrically connected setting with the LED wafer, it is characterized in that: be provided with the light transmission piece that the two is separated between described fluorescence packaging body and the LED wafer, be provided with heat insulation photic zone between this light transmission piece and the LED wafer.This setting is separated the LED wafer by light transmission piece and heat insulation photic zone, and heat has solved the fluorescence packaging body and worn out and the yellow problem because of overheated the appearance to the transmission of fluorescence packaging body when greatly having reduced the work of LED wafer, makes the light decay of product greatly reduce.
Further being provided with is that described heat insulation photic zone is an air layer.This is provided with and has utilized air layer heat-proof quality preferably itself, and processing and fabricating is convenient, has reduced the production cost.
The sidewall that further setting is described package cavity is provided with the shoulder of shelving for light transmission piece, and the lower position of relative this shoulder has at least one section to be outward-dipping setting on the sidewall.By this setting, shoulder provides light transmission piece the suitable position of shelving, it is stable, reliable and easy to assembly that light transmission piece is installed, the lower position of relative this shoulder is outward-dipping this section sidewall that is arranged so that on the sidewall becomes a taperedchromeplatedbezel, make the light-ray condensing that LED is luminous, improve the brightness of product.
Further being provided with is that described support is a metallic support, described first electrode is a metallic support itself, described second electrode is the copper-foil conducting electricity that is arranged on the metallic support and insulate with it, and described LED wafer is electrically connected with metallic support and copper-foil conducting electricity respectively by gold thread.
Further being provided with is that described light transmission piece is the transparent glass sheet.
Further being provided with is that described fluorescence packaging body is the colloidal silica that is mixed with fluorescent material.
Be provided with the heat conduction primer between the diapire that further setting is described LED wafer and package cavity.By this setting, the heat that the LED wafer that makes produces reduces the temperature of LED wafer quickly to the metallic support transmission, and it is reliable to make it more stable work.
The invention has the advantages that: the LED wafer is separated by crossing light transmission piece and heat insulation photic zone, heat is to the transmission of fluorescence packaging body when greatly having reduced the work of LED wafer, solved the fluorescence packaging body and worn out and the yellow problem, made the light decay of product greatly reduce because of overheated the appearance.The present invention also has the brightness height in addition, long service life, easy to assembly, advantage that processing cost is lower.
Below in conjunction with specification drawings and specific embodiments the present invention is done further introduction.
Figure of description
Fig. 1 specific embodiment of the invention structural representation
Fig. 2 specific embodiment of the invention test and appraisal test data table 1
Fig. 3 specific embodiment of the invention test and appraisal test data table 2
The specific embodiment
The specific embodiment of the present invention as shown in Figure 1, include support 1, LED wafer 2, fluorescence packaging body 3, described support 1 upper surface is provided with the package cavity 11 of indent, described LED wafer is installed on the diapire of this package cavity 11, be packaged with fluorescence packaging body 3 on it, this fluorescence packaging body 3 contains the fluorescent material that can have LED wafer coupling to send white light, at least be provided with first electrode and second electrode on the described metallic support, this first electrode and second electrode are electrically connected setting with LED wafer 2, present embodiment, described support is a metallic support 1, described first electrode is a metallic support itself 1, described second electrode is to be arranged on the metallic support 1 and the copper-foil conducting electricity 6 of insulation with it, and described LED wafer 2 is electrically connected with metallic support 1 and copper-foil conducting electricity 6 respectively by gold thread 7.Be provided with between fluorescence packaging body of the present invention and the LED wafer the two light transmission piece that separates 4, be provided with heat insulation photic zone 5 between this light transmission piece and the LED wafer, by light transmission piece 4 and heat insulation photic zone 5 LED wafer 2 is separated, heat transmits to fluorescence packaging body 3 when greatly having reduced 2 work of LED wafer, having solved fluorescence packaging body 3 wore out and the yellow problem because of overheated the appearance, make the light decay of product greatly reduce, be provided with and reduction assembling processing and fabricating cost in order to simplify the internal structure of an organization, described heat insulation photic zone 5 is an air layer, made full use of air layer heat-proof quality preferably itself, and processing and fabricating is convenient, has reduced the production cost.Certainly heat insulation photic zone 5 of the present invention also can adopt modes such as other heat insulation light transmissive materials or vacuum layer.
Under same experimental conditions, compare the white hair optical diode (each 18) that the present invention and conventional package technology (the fluorescence packaging body directly covers the LED wafer surface) are made, can obtain following experimental data shown in form among Fig. 2, Fig. 3.
Can find out obviously that from Fig. 2, Fig. 3 form after 1000 hours, the average light decay 27.8% of the white hair optical diode that conventional package technology is made, the average light decay of the present invention only are 5.1%.
The sidewall of package cavity 11 of the present invention is provided with the shoulder of shelving for light transmission piece 111, and the lower position of relative this shoulder 111 has at least one section to be outward-dipping setting on the sidewall, this section sidewall becomes a taperedchromeplatedbezel, makes the light-ray condensing that LED is luminous, improves the brightness of product.
Described first electrode of present embodiment is a metallic support itself in addition, and described second electrode is the copper-foil conducting electricity 6 that is arranged on the metallic support and insulate with it, and described LED wafer is electrically connected with metallic support 1 and copper-foil conducting electricity 6 respectively by gold thread 7.The described light transmission piece 4 of present embodiment is the transparent glass sheet, and described fluorescence packaging body 3 is for being mixed with the colloidal silica of fluorescent material.
Present embodiment is provided with heat conduction primer 8 between the diapire of described LED wafer 2 and package cavity, and the heat that the LED wafer that makes produces reduces the temperature of LED wafer quickly to the metallic support transmission, and it is reliable to make it more stable work.
Claims (7)
1. low light attenuation white luminous diode, include support, the LED wafer, the fluorescence packaging body, described support upper surface is provided with the package cavity of indent, described LED wafer is installed on the diapire of this package cavity, be packaged with the fluorescence packaging body on it, this fluorescence packaging body contains the fluorescent material that can have LED wafer coupling to produce white light, at least be provided with first electrode and second electrode on the described support, this first electrode and second electrode are electrically connected setting with the LED wafer, it is characterized in that: be provided with the light transmission piece that the two is separated between described fluorescence packaging body and the LED wafer, be provided with heat insulation photic zone between this light transmission piece and the LED wafer.
2. low light attenuation white luminous diode according to claim 1 is characterized in that: described heat insulation photic zone is an air layer.
3. low light attenuation white luminous diode according to claim 1 and 2 is characterized in that: the sidewall of described package cavity is provided with the shoulder of shelving for light transmission piece, and the lower position of relative this shoulder has at least one section to be outward-dipping setting on this sidewall.
4. low light attenuation white luminous diode according to claim 3, it is characterized in that: described support is a metallic support, described first electrode is a metallic support itself, described second electrode is the copper-foil conducting electricity that is arranged on the metallic support and insulate with it, and described LED wafer is electrically connected with metallic support and copper-foil conducting electricity respectively by gold thread.
5. low light attenuation white luminous diode according to claim 4 is characterized in that: described light transmission piece is the transparent glass sheet.
6. low light attenuation white luminous diode according to claim 5 is characterized in that: described fluorescence packaging body is the colloidal silica that is mixed with fluorescent material.
7. low light attenuation white luminous diode according to claim 6 is characterized in that: be provided with the heat conduction primer between the diapire of described LED wafer and package cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101202170A CN101338866A (en) | 2008-08-11 | 2008-08-11 | Low light attenuation white luminous diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101202170A CN101338866A (en) | 2008-08-11 | 2008-08-11 | Low light attenuation white luminous diode |
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| Publication Number | Publication Date |
|---|---|
| CN101338866A true CN101338866A (en) | 2009-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2008101202170A Pending CN101338866A (en) | 2008-08-11 | 2008-08-11 | Low light attenuation white luminous diode |
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| CN (1) | CN101338866A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102182945A (en) * | 2011-04-15 | 2011-09-14 | 青岛海泰镀膜技术有限公司 | LED (light-emitted diode) fluorescence excitation light source and method for exciting fluorescence of LED |
| CN102456801A (en) * | 2010-10-20 | 2012-05-16 | 展晶科技(深圳)有限公司 | Packaging structure of light emitting diode |
| CN102456810A (en) * | 2010-10-26 | 2012-05-16 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure |
| CN102544312A (en) * | 2010-12-15 | 2012-07-04 | 日东电工株式会社 | Optical semiconductor device |
| TWI425685B (en) * | 2010-10-28 | 2014-02-01 | Advanced Optoelectronic Tech | Led package structure |
| CN104681694A (en) * | 2010-08-18 | 2015-06-03 | 晶元光电股份有限公司 | Light emitting device |
| CN105280758A (en) * | 2014-06-18 | 2016-01-27 | 葳天科技股份有限公司 | Packaging structure and manufacture method of LED module |
| CN105304802A (en) * | 2015-10-12 | 2016-02-03 | 深圳万城节能股份有限公司 | Method for manufacturing light emitting device |
| CN106711307A (en) * | 2015-11-18 | 2017-05-24 | 世迈克琉明有限公司 | Frame for semiconductor light emitting device |
-
2008
- 2008-08-11 CN CNA2008101202170A patent/CN101338866A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681694A (en) * | 2010-08-18 | 2015-06-03 | 晶元光电股份有限公司 | Light emitting device |
| CN104681694B (en) * | 2010-08-18 | 2017-08-08 | 晶元光电股份有限公司 | Light-emitting device |
| CN102456801A (en) * | 2010-10-20 | 2012-05-16 | 展晶科技(深圳)有限公司 | Packaging structure of light emitting diode |
| CN102456810A (en) * | 2010-10-26 | 2012-05-16 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure |
| TWI425685B (en) * | 2010-10-28 | 2014-02-01 | Advanced Optoelectronic Tech | Led package structure |
| CN102544312A (en) * | 2010-12-15 | 2012-07-04 | 日东电工株式会社 | Optical semiconductor device |
| CN102182945A (en) * | 2011-04-15 | 2011-09-14 | 青岛海泰镀膜技术有限公司 | LED (light-emitted diode) fluorescence excitation light source and method for exciting fluorescence of LED |
| CN102182945B (en) * | 2011-04-15 | 2013-10-16 | 青岛海泰新光科技有限公司 | LED (light-emitted diode) fluorescence excitation light source and method for exciting fluorescence of LED |
| CN105280758A (en) * | 2014-06-18 | 2016-01-27 | 葳天科技股份有限公司 | Packaging structure and manufacture method of LED module |
| CN105304802A (en) * | 2015-10-12 | 2016-02-03 | 深圳万城节能股份有限公司 | Method for manufacturing light emitting device |
| CN106711307A (en) * | 2015-11-18 | 2017-05-24 | 世迈克琉明有限公司 | Frame for semiconductor light emitting device |
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Open date: 20090107 |