CN102124577A - 制造光提取器的方法 - Google Patents

制造光提取器的方法 Download PDF

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Publication number
CN102124577A
CN102124577A CN2009801321670A CN200980132167A CN102124577A CN 102124577 A CN102124577 A CN 102124577A CN 2009801321670 A CN2009801321670 A CN 2009801321670A CN 200980132167 A CN200980132167 A CN 200980132167A CN 102124577 A CN102124577 A CN 102124577A
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CN
China
Prior art keywords
light
layer
cases
structures
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801321670A
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English (en)
Chinese (zh)
Inventor
张俊颖
迈克尔·A·哈斯
特里·L·史密斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
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3M Innovative Properties Co
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Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN102124577A publication Critical patent/CN102124577A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Knitting Of Fabric (AREA)
CN2009801321670A 2008-06-26 2009-06-03 制造光提取器的方法 Pending CN102124577A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7593208P 2008-06-26 2008-06-26
US61/075,932 2008-06-26
PCT/US2009/046077 WO2009158158A2 (en) 2008-06-26 2009-06-03 Method of fabricating light extractor

Publications (1)

Publication Number Publication Date
CN102124577A true CN102124577A (zh) 2011-07-13

Family

ID=41445189

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801321670A Pending CN102124577A (zh) 2008-06-26 2009-06-03 制造光提取器的方法

Country Status (7)

Country Link
US (1) US8324000B2 (https=)
EP (1) EP2308102A4 (https=)
JP (1) JP2011526075A (https=)
KR (1) KR20110031956A (https=)
CN (1) CN102124577A (https=)
TW (1) TW201007991A (https=)
WO (1) WO2009158158A2 (https=)

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EP2308101A4 (en) * 2008-06-26 2014-04-30 3M Innovative Properties Co SEMICONDUCTOR LIGHT CONVERSION CONSTRUCTION
EP2308103A4 (en) * 2008-06-26 2014-04-30 3M Innovative Properties Co LIGHT CONVERSION CONSTRUCTION
US20110172292A1 (en) * 2008-06-30 2011-07-14 Hansen Jens Bo Rode Antidote oligomers
EP2335293A1 (en) * 2008-09-04 2011-06-22 3M Innovative Properties Company Light source with improved monochromaticity
JP2012514335A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側の波長変換器及びそれを使用する光生成デバイスの作製方法
CN102318089A (zh) 2008-12-24 2012-01-11 3M创新有限公司 具有双面波长转换器的光产生装置
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
US8242684B2 (en) * 2010-09-27 2012-08-14 Osram Sylvania Inc. LED wavelength-converting plate with microlenses
US8334646B2 (en) 2010-09-27 2012-12-18 Osram Sylvania Inc. LED wavelength-coverting plate with microlenses in multiple layers
US8692446B2 (en) * 2011-03-17 2014-04-08 3M Innovative Properties Company OLED light extraction films having nanoparticles and periodic structures
JP6101784B2 (ja) * 2013-03-06 2017-03-22 Ｊｘエネルギー株式会社 凹凸構造を有する部材の製造方法及びそれにより製造された凹凸構造を有する部材
JP6221387B2 (ja) * 2013-06-18 2017-11-01 日亜化学工業株式会社 発光装置とその製造方法
CN104091898B (zh) * 2014-07-30 2018-06-01 上海天马有机发光显示技术有限公司 有机发光显示面板及其制造方法
EP3533090A1 (en) 2016-10-28 2019-09-04 3M Innovative Properties Company Nanostructured article
KR102668109B1 (ko) * 2020-11-03 2024-05-22 한국전자통신연구원 광소자의 광학 특성을 조절하는 나노 구조체 및 그의 제조방법

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US20060071219A1 (en) * 2004-09-24 2006-04-06 Lockheed Martin Corporation Monolithic array for solid state ultraviolet light emitters
CN1969402A (zh) * 2004-06-14 2007-05-23 皇家飞利浦电子股份有限公司 具有改进型发光轮廓（Profile）的发光二极管
US20070190676A1 (en) * 2005-01-11 2007-08-16 Chen-Fu Chu Light emitting diodes (leds) with improved light extraction by roughening
CN101103438A (zh) * 2005-01-11 2008-01-09 美商旭明国际股份有限公司 垂直发光二极管的制造方法
US20080047929A1 (en) * 2006-08-22 2008-02-28 Agency For Science, Technology And Research Method for fabricating micro and nano structures

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EP2308101A4 (en) 2008-06-26 2014-04-30 3M Innovative Properties Co SEMICONDUCTOR LIGHT CONVERSION CONSTRUCTION
EP2308103A4 (en) 2008-06-26 2014-04-30 3M Innovative Properties Co LIGHT CONVERSION CONSTRUCTION

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1596041A (zh) * 2003-09-10 2005-03-16 三星Sdi株式会社 发光器件衬底和使用该衬底的发光器件
CN1969402A (zh) * 2004-06-14 2007-05-23 皇家飞利浦电子股份有限公司 具有改进型发光轮廓（Profile）的发光二极管
US20060071219A1 (en) * 2004-09-24 2006-04-06 Lockheed Martin Corporation Monolithic array for solid state ultraviolet light emitters
US20070190676A1 (en) * 2005-01-11 2007-08-16 Chen-Fu Chu Light emitting diodes (leds) with improved light extraction by roughening
CN101103438A (zh) * 2005-01-11 2008-01-09 美商旭明国际股份有限公司 垂直发光二极管的制造方法
US20080047929A1 (en) * 2006-08-22 2008-02-28 Agency For Science, Technology And Research Method for fabricating micro and nano structures

Also Published As

Publication number Publication date
US20110117686A1 (en) 2011-05-19
EP2308102A4 (en) 2014-05-07
JP2011526075A (ja) 2011-09-29
TW201007991A (en) 2010-02-16
EP2308102A2 (en) 2011-04-13
KR20110031956A (ko) 2011-03-29
US8324000B2 (en) 2012-12-04
WO2009158158A3 (en) 2010-03-11
WO2009158158A2 (en) 2009-12-30

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Application publication date: 20110713