CN102124411B - 用于微光刻投射曝光的设备以及用于检查基底表面的设备 - Google Patents

用于微光刻投射曝光的设备以及用于检查基底表面的设备 Download PDF

Info

Publication number
CN102124411B
CN102124411B CN200980119381.2A CN200980119381A CN102124411B CN 102124411 B CN102124411 B CN 102124411B CN 200980119381 A CN200980119381 A CN 200980119381A CN 102124411 B CN102124411 B CN 102124411B
Authority
CN
China
Prior art keywords
equipment
substrate
optical system
radiation
beam path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980119381.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN102124411A (zh
Inventor
汉斯-于尔根·曼
沃尔夫冈·辛格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to CN201410363267.7A priority Critical patent/CN104122761B/zh
Publication of CN102124411A publication Critical patent/CN102124411A/zh
Application granted granted Critical
Publication of CN102124411B publication Critical patent/CN102124411B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H10P76/00—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN200980119381.2A 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备 Expired - Fee Related CN102124411B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410363267.7A CN104122761B (zh) 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US7298008P 2008-04-04 2008-04-04
DE102008017645.1 2008-04-04
DE102008017645A DE102008017645A1 (de) 2008-04-04 2008-04-04 Vorrichtung zur mikrolithographischen Projektionsbelichtung sowie Vorrichtung zur Inspektion einer Oberfläche eines Substrats
US61/072,980 2008-04-04
PCT/EP2009/002302 WO2009121541A1 (de) 2008-04-04 2009-03-30 Vorrichtung zur mikrolithographischen projektionsbelichtung sowie vorrichtung zur inspektion einer oberfläche eines substrats

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201410363267.7A Division CN104122761B (zh) 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备

Publications (2)

Publication Number Publication Date
CN102124411A CN102124411A (zh) 2011-07-13
CN102124411B true CN102124411B (zh) 2014-08-27

Family

ID=41051533

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200980119381.2A Expired - Fee Related CN102124411B (zh) 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备
CN201410363267.7A Expired - Fee Related CN104122761B (zh) 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201410363267.7A Expired - Fee Related CN104122761B (zh) 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备

Country Status (6)

Country Link
US (2) US8345267B2 (enExample)
JP (2) JP4892645B2 (enExample)
KR (1) KR101633942B1 (enExample)
CN (2) CN102124411B (enExample)
DE (1) DE102008017645A1 (enExample)
WO (1) WO2009121541A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5022959B2 (ja) * 2008-03-24 2012-09-12 株式会社日立製作所 反射屈折型対物レンズを用いた欠陥検査装置
DE102010041556A1 (de) 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Mikrolithographie und Verfahren zur mikrolithographischen Abbildung
DE102010041562A1 (de) 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Mikrolithographie sowie Verfahren zur mikrolithographischen Belichtung
WO2012137699A1 (ja) * 2011-04-05 2012-10-11 株式会社ニコン 光学装置、露光装置、およびデバイス製造方法
US9196515B2 (en) 2012-03-26 2015-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
US8903532B2 (en) * 2012-03-26 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
US8948495B2 (en) 2012-08-01 2015-02-03 Kla-Tencor Corp. Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
US8755114B1 (en) 2013-06-14 2014-06-17 Computer Power Supply, Inc. Apparatus for aiding manual, mechanical alignment of optical equipment
CN103365118B (zh) * 2013-07-19 2015-03-25 中国科学院上海光学精密机械研究所 光刻机光束监测系统的标定装置及标定方法
US10495982B2 (en) * 2013-10-28 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time overlay error reduction
JP5932859B2 (ja) * 2014-02-18 2016-06-08 キヤノン株式会社 検出装置、インプリント装置、および物品の製造方法
US10656098B2 (en) 2016-02-03 2020-05-19 Kla-Tencor Corporation Wafer defect inspection and review systems
EP3411694A4 (en) * 2016-02-03 2019-09-04 Kla-Tencor Corporation WAFER DEFECT INSPECTION AND TESTING SYSTEMS
DE102017217680A1 (de) * 2017-10-05 2017-11-23 Carl Zeiss Smt Gmbh Projektionsobjektiv mit einem Messstrahlengang
DE102020216258A1 (de) * 2020-12-18 2022-06-23 Q.ant GmbH Verfahren zum Kalibrieren eines Partikelsensors, Partikelsensor und Vorrichtung mit einem Partikelsensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1479940A (zh) * 2000-12-06 2004-03-03 ������������ʽ���� 观察装置及其制造方法、曝光装置和微型器件的制造方法
CN1487368A (zh) * 2002-08-29 2004-04-07 Asml 调准装置和方法，平版印刷装置，器件制造方法及制造的器件
CN1514306A (zh) * 2002-12-16 2004-07-21 Asml 光刻装置、器件制造方法和由此制造得到器件

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318980C2 (de) * 1982-07-09 1986-09-18 Perkin-Elmer Censor Anstalt, Vaduz Vorrichtung zum Justieren beim Projektionskopieren von Masken
NL8600639A (nl) 1986-03-12 1987-10-01 Asm Lithography Bv Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze.
US4747678A (en) * 1986-12-17 1988-05-31 The Perkin-Elmer Corporation Optical relay system with magnification
NL8900991A (nl) * 1989-04-20 1990-11-16 Asm Lithography Bv Apparaat voor het afbeelden van een maskerpatroon op een substraat.
JP2890882B2 (ja) 1990-04-06 1999-05-17 キヤノン株式会社 位置付け方法、半導体デバイスの製造方法及びそれを用いた投影露光装置
DE4109484C2 (de) 1991-03-22 2001-03-01 Zeiss Carl Fa Meßobjektiv
JP3384038B2 (ja) * 1992-06-15 2003-03-10 株式会社ニコン 面位置検出光学装置
US5978071A (en) * 1993-01-07 1999-11-02 Nikon Corporation Projection exposure apparatus and method in which mask stage is moved to provide alignment with a moving wafer stage
JP3412704B2 (ja) * 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JP3368091B2 (ja) 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
JP4037947B2 (ja) * 1998-01-29 2008-01-23 株式会社テクノホロン 対象物のアライメント方法
WO1999040613A1 (en) * 1998-02-09 1999-08-12 Nikon Corporation Method of adjusting position detector
US6240158B1 (en) * 1998-02-17 2001-05-29 Nikon Corporation X-ray projection exposure apparatus with a position detection optical system
JPH11238666A (ja) * 1998-02-19 1999-08-31 Nikon Corp Ｘ線投影露光装置
WO2000019497A1 (en) * 1998-09-30 2000-04-06 Nikon Corporation Alignment method and method for producing device using the alignment method
AU1179200A (en) * 1998-11-18 2000-06-05 Nikon Corporation Exposure method and device
US6241056B1 (en) * 1998-12-29 2001-06-05 Hayes Lemmerz International, Inc. Composite brake drum
JP3796369B2 (ja) 1999-03-24 2006-07-12 キヤノン株式会社 干渉計を搭載した投影露光装置
JP4175748B2 (ja) * 1999-09-20 2008-11-05 大日本スクリーン製造株式会社 パターン検査装置
JP2001185480A (ja) * 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
EP1093021A3 (en) * 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
US6600608B1 (en) * 1999-11-05 2003-07-29 Carl-Zeiss-Stiftung Catadioptric objective comprising two intermediate images
KR20030076238A (ko) * 2001-04-17 2003-09-26 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 극자외선 투과 계면 구조체 및 극자외선 리소그래피 투사장치
DE10120446C2 (de) * 2001-04-26 2003-04-17 Zeiss Carl Projektionsbelichtungsanlage sowie Verfahren zur Kompensation von Abbildungsfehlern in einer Projektionsbelichtungsanlage, insbesondere für die Mikro-Lithographie
DE10139177A1 (de) * 2001-08-16 2003-02-27 Zeiss Carl Objektiv mit Pupillenobskuration
US6618120B2 (en) * 2001-10-11 2003-09-09 Nikon Corporation Devices and methods for compensating for tilting of a leveling table in a microlithography apparatus
TWI225665B (en) * 2001-10-17 2004-12-21 Canon Kk Apparatus control system, apparatus control method, semiconductor exposure apparatus, semiconductor exposure apparatus control method and semiconductor device manufacturing method
JP3564104B2 (ja) * 2002-01-29 2004-09-08 キヤノン株式会社 露光装置及びその制御方法、これを用いたデバイスの製造方法
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10220816A1 (de) * 2002-05-10 2003-11-20 Zeiss Carl Microelectronic Sys Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm
US6828542B2 (en) * 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
US20030234993A1 (en) 2002-06-21 2003-12-25 Hazelton Andrew J. Adaptive optic off-axis metrology
TWI242691B (en) 2002-08-23 2005-11-01 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
EP1540423B1 (en) 2002-08-26 2007-03-28 Carl Zeiss SMT AG Grating based spectral filter for eliminating out of band radiation in an extreme ultra-violet lithography system
JP2004193269A (ja) * 2002-12-10 2004-07-08 Hitachi Ltd マスクの製造方法および半導体集積回路装置の製造方法
JP2004228456A (ja) * 2003-01-27 2004-08-12 Canon Inc 露光装置
DE10323664B4 (de) 2003-05-14 2006-02-16 Carl Zeiss Smt Ag Belichtungsvorrichtung mit Dosissensorik
JP4378109B2 (ja) * 2003-05-30 2009-12-02 キヤノン株式会社 露光装置、投影光学系、デバイスの製造方法
WO2005003862A1 (de) 2003-07-05 2005-01-13 Carl Zeiss Smt Ag Vorrichtung zur polarisationsspezifischen untersuchung eines optischen systems
EP1496398A1 (de) 2003-07-05 2005-01-12 Carl Zeiss SMT AG Vorrichtung zur polarisationsspezifischen Untersuchung, optisches Abbildungssystem und Kalibrierverfahren
JP2005166785A (ja) 2003-12-01 2005-06-23 Canon Inc 位置検出装置及び方法、並びに、露光装置
US7288779B2 (en) * 2003-12-17 2007-10-30 Asml Netherlands B.V. Method for position determination, method for overlay optimization, and lithographic projection apparatus
US20050134816A1 (en) * 2003-12-22 2005-06-23 Asml Netherlands B.V. Lithographic apparatus, method of exposing a substrate, method of measurement, device manufacturing method, and device manufactured thereby
CN102207609B (zh) 2004-01-14 2013-03-20 卡尔蔡司Smt有限责任公司 反射折射投影物镜
JP2005209896A (ja) * 2004-01-23 2005-08-04 Nikon Corp Ｅｕｖ露光装置におけるレチクル位置検出方法
JP4843272B2 (ja) * 2004-07-31 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学システム
DE102005042005A1 (de) * 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
EP1828829B1 (de) 2004-12-23 2012-08-22 Carl Zeiss SMT GmbH Hochaperturiges objektiv mit obskurierter pupille
ES2329270T3 (es) 2004-12-30 2009-11-24 F. Hoffmann-La Roche Ag Sintesis del peptido t-1249 utilizando fragmentos intermediarios del ipeptido.
US7282701B2 (en) * 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7612892B2 (en) 2005-10-06 2009-11-03 Nikon Corporation Imaging optical system configured with through the lens optics for producing control information
JP5622068B2 (ja) 2005-11-15 2014-11-12 株式会社ニコン 面位置検出装置、露光装置、およびデバイスの製造方法
DE102005056914A1 (de) 2005-11-29 2007-05-31 Carl Zeiss Smt Ag Projektionsbelichtungsystem
DE102005062618B4 (de) 2005-12-23 2008-05-08 Carl Zeiss Smt Ag Optische Abbildungseinrichtung und Abbildungsverfahren mit Bestimmung von Abbildungsfehlern
EP3264444A1 (en) 2006-03-10 2018-01-03 Nikon Corporation Projection optical system, exposure apparatus and method for manufacuring semiconductor device
JP2007250947A (ja) * 2006-03-17 2007-09-27 Canon Inc 露光装置および像面検出方法
JP2008108852A (ja) * 2006-10-24 2008-05-08 Canon Inc 投影露光装置、光学部品及びデバイス製造方法
EP1950594A1 (de) * 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1479940A (zh) * 2000-12-06 2004-03-03 ������������ʽ���� 观察装置及其制造方法、曝光装置和微型器件的制造方法
CN1487368A (zh) * 2002-08-29 2004-04-07 Asml 调准装置和方法，平版印刷装置，器件制造方法及制造的器件
CN1514306A (zh) * 2002-12-16 2004-07-21 Asml 光刻装置、器件制造方法和由此制造得到器件

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2001-91228A 2001.04.06
JP特开平11-220006A 1999.08.10

Also Published As

Publication number Publication date
JP4892645B2 (ja) 2012-03-07
DE102008017645A1 (de) 2009-10-08
WO2009121541A1 (de) 2009-10-08
KR20100125476A (ko) 2010-11-30
CN102124411A (zh) 2011-07-13
US20130050672A1 (en) 2013-02-28
CN104122761A (zh) 2014-10-29
JP2011517074A (ja) 2011-05-26
JP5165101B2 (ja) 2013-03-21
US20110085179A1 (en) 2011-04-14
US8953173B2 (en) 2015-02-10
JP2012089852A (ja) 2012-05-10
US8345267B2 (en) 2013-01-01
CN104122761B (zh) 2017-11-14
KR101633942B1 (ko) 2016-06-27

Similar Documents

Publication Publication Date Title
CN102124411B (zh) 用于微光刻投射曝光的设备以及用于检查基底表面的设备
US10474039B2 (en) Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
JP6006919B2 (ja) メトロロジ用の反射屈折照明システム
JPH06112106A (ja) オブジェクト画像焦点合わせ装置及び方法、並びにマスク画像焦点合わせ装置
JP2009290210A (ja) 基板内の欠陥を判定する方法およびリソグラフィプロセスにおいて基板を露光するための装置
JP2017156545A (ja) 検査装置、及びそのフォーカス調整方法
KR20090084754A (ko) 노광 장치 및 디바이스의 제조 방법
JP2002198303A (ja) 露光装置、光学特性計測方法、及びデバイス製造方法
US11204557B2 (en) Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
KR101267144B1 (ko) 센서의 교정 방법, 노광 방법, 노광 장치, 디바이스 제조방법, 및 반사형 마스크
CN100409102C (zh) 步进扫描投影光刻机中的杂散光原位检测方法
KR100606493B1 (ko) 리소그래피 장치용 아베 아암 캘리브레이션 시스템
JPH07270119A (ja) 集積回路リソグラフィー用の蛍光使用の直接レチクル対ウエハ・アライメントの方法及び装置
US20240061328A1 (en) Method and apparatus for characterization of a microlithography mask
US11314174B2 (en) Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
JP2009147332A (ja) リソグラフィ投影装置で使用する透過像検出デバイス及びこのようなリソグラフィ装置のパターニングデバイス及び／又は投影システムの３次歪みを割り出す方法
CN111324006B (zh) 检测光刻掩模的区域部分上的结构的检测装置及设备
JPH0744138B2 (ja) 位置合わせ装置
JPS60238836A (ja) パタ−ン検出方法と該方法を用いた投影光学装置
KR20200054207A (ko) 웨이퍼 홀딩 디바이스 및 투영 마이크로리소그래피 시스템
JPH0855788A (ja) 位置検出方法と該方法を用いた投影露光装置
JP2535889C (enExample)

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140827

CF01 Termination of patent right due to non-payment of annual fee