CN102124411B - 用于微光刻投射曝光的设备以及用于检查基底表面的设备 - Google Patents

用于微光刻投射曝光的设备以及用于检查基底表面的设备 Download PDF

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Publication number
CN102124411B
CN102124411B CN200980119381.2A CN200980119381A CN102124411B CN 102124411 B CN102124411 B CN 102124411B CN 200980119381 A CN200980119381 A CN 200980119381A CN 102124411 B CN102124411 B CN 102124411B
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CN
China
Prior art keywords
equipment
substrate
optical system
radiation
beam path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980119381.2A
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English (en)
Chinese (zh)
Other versions
CN102124411A (zh
Inventor
汉斯-于尔根·曼
沃尔夫冈·辛格
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CN201410363267.7A priority Critical patent/CN104122761B/zh
Publication of CN102124411A publication Critical patent/CN102124411A/zh
Application granted granted Critical
Publication of CN102124411B publication Critical patent/CN102124411B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN200980119381.2A 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备 Expired - Fee Related CN102124411B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410363267.7A CN104122761B (zh) 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US7298008P 2008-04-04 2008-04-04
DE102008017645.1 2008-04-04
DE102008017645A DE102008017645A1 (de) 2008-04-04 2008-04-04 Vorrichtung zur mikrolithographischen Projektionsbelichtung sowie Vorrichtung zur Inspektion einer Oberfläche eines Substrats
US61/072,980 2008-04-04
PCT/EP2009/002302 WO2009121541A1 (de) 2008-04-04 2009-03-30 Vorrichtung zur mikrolithographischen projektionsbelichtung sowie vorrichtung zur inspektion einer oberfläche eines substrats

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201410363267.7A Division CN104122761B (zh) 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备

Publications (2)

Publication Number Publication Date
CN102124411A CN102124411A (zh) 2011-07-13
CN102124411B true CN102124411B (zh) 2014-08-27

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CN200980119381.2A Expired - Fee Related CN102124411B (zh) 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备
CN201410363267.7A Expired - Fee Related CN104122761B (zh) 2008-04-04 2009-03-30 用于微光刻投射曝光的设备以及用于检查基底表面的设备

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US (2) US8345267B2 (cg-RX-API-DMAC10.html)
JP (2) JP4892645B2 (cg-RX-API-DMAC10.html)
KR (1) KR101633942B1 (cg-RX-API-DMAC10.html)
CN (2) CN102124411B (cg-RX-API-DMAC10.html)
DE (1) DE102008017645A1 (cg-RX-API-DMAC10.html)
WO (1) WO2009121541A1 (cg-RX-API-DMAC10.html)

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US8903532B2 (en) * 2012-03-26 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
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Also Published As

Publication number Publication date
JP4892645B2 (ja) 2012-03-07
US20130050672A1 (en) 2013-02-28
US8345267B2 (en) 2013-01-01
CN102124411A (zh) 2011-07-13
US20110085179A1 (en) 2011-04-14
KR101633942B1 (ko) 2016-06-27
CN104122761A (zh) 2014-10-29
DE102008017645A1 (de) 2009-10-08
JP5165101B2 (ja) 2013-03-21
JP2011517074A (ja) 2011-05-26
CN104122761B (zh) 2017-11-14
JP2012089852A (ja) 2012-05-10
US8953173B2 (en) 2015-02-10
WO2009121541A1 (de) 2009-10-08
KR20100125476A (ko) 2010-11-30

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