CN102097307A - 偏移侧墙及mos晶体管的形成方法 - Google Patents
偏移侧墙及mos晶体管的形成方法 Download PDFInfo
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- CN102097307A CN102097307A CN2009102012017A CN200910201201A CN102097307A CN 102097307 A CN102097307 A CN 102097307A CN 2009102012017 A CN2009102012017 A CN 2009102012017A CN 200910201201 A CN200910201201 A CN 200910201201A CN 102097307 A CN102097307 A CN 102097307A
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CN2009102012017A CN102097307B (zh) | 2009-12-15 | 2009-12-15 | 偏移侧墙及mos晶体管的形成方法 |
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CN2009102012017A CN102097307B (zh) | 2009-12-15 | 2009-12-15 | 偏移侧墙及mos晶体管的形成方法 |
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CN102097307A true CN102097307A (zh) | 2011-06-15 |
CN102097307B CN102097307B (zh) | 2012-08-22 |
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CN2009102012017A Expired - Fee Related CN102097307B (zh) | 2009-12-15 | 2009-12-15 | 偏移侧墙及mos晶体管的形成方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113471049A (zh) * | 2021-06-30 | 2021-10-01 | 北京屹唐半导体科技股份有限公司 | 用于处理工件的方法及等离子体刻蚀机、半导体器件 |
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- 2009-12-15 CN CN2009102012017A patent/CN102097307B/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113471049A (zh) * | 2021-06-30 | 2021-10-01 | 北京屹唐半导体科技股份有限公司 | 用于处理工件的方法及等离子体刻蚀机、半导体器件 |
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CN102097307B (zh) | 2012-08-22 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121101 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121101 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120822 Termination date: 20191215 |
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CF01 | Termination of patent right due to non-payment of annual fee |