CN102035412A - 用于产生直流供电电压的单片交流/直流转换器 - Google Patents

用于产生直流供电电压的单片交流/直流转换器 Download PDF

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CN102035412A
CN102035412A CN201010297747XA CN201010297747A CN102035412A CN 102035412 A CN102035412 A CN 102035412A CN 201010297747X A CN201010297747X A CN 201010297747XA CN 201010297747 A CN201010297747 A CN 201010297747A CN 102035412 A CN102035412 A CN 102035412A
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CN102035412B (zh
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D·龚
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/2176—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only comprising a passive stage to generate a rectified sinusoidal voltage and a controlled switching element in series between such stage and the output
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H02M7/2195—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration the switches being synchronously commutated at the same frequency of the AC input voltage

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  • Power Engineering (AREA)
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  • Rectifiers (AREA)

Abstract

本发明涉及一种用于产生直流供电电压的单片交流/直流转换器，其包括一整流器/稳压器电路，其被联接以接收交流电源电压并输出稳定直流电压。所述整流器/稳压器电路包括第一和第二开关元件，其在启用时提供充电电流。所述第一和第二开关元件在禁用时不提供充电电流。一传感器电路被联接以检测所述稳定直流电压并产生一反馈控制信号，该信号被联接到所述整流器/稳压器电路，当所述稳定直流电压在一目标电压之上时，所述反馈控制信号启用所述第一和第二开关元件，并且当所述稳定直流电压在所述目标电压之下时，所述反馈控制信号禁用所述第一和第二开关元件。

Description

用于产生直流供电电压的单片交流/直流转换器
技术领域
本公开总体上涉及集成电路领域，并更具体地涉及用于从交流线电压中产生稳定直流供电电压的集成电路。
背景技术
集成电路通常要求稳定直流供电电压用以运行。该稳定直流供电电压通常经由一些外部电路元件而从交流线电压获取，所述外部电路元件被布置以实现分立的整流器。现有的整流电路，例如半桥或全桥整流电路通常采用分立的二极管来实现。稳压电路的分级通常包括分立元件，例如电容器，以提供对从整流器接收的直流电压的调节。分立元件的使用增加了材料成本，并要求印刷电路板(PCB)上额外的空间，以向集成电路提供稳定直流供电电压。
附图说明
在附图中，以举例方式而非限制方式说明了本发明，在附图中：
图1图解说明在一集成电路(IC)上用于产生直流电源供电电压的单片交流/直流电源转换器的示例性方块图。
图2图解说明在图1中示出的单片交流/直流电源转换器电路的示例性概略电路原理图。
图3图解说明在图1和图2中示出的单片交流/直流电源转换器电路的示例性详细电路原理图。
具体实施方案
在接下来的描述中说明特定的细节，例如材料类型、电压、元件值、结构等等，以提供对本发明的透彻的理解。然而，相关领域普通技术人员会理解这些特定的细节可以不是实践所描述的实施方案所必需的。
应理解，图中的各元件是代表性的，并且为了清晰没有按比例画出。也应理解，尽管公开了利用N沟道场效应晶体管器件的集成电路，在其他实施方案中也可以利用P沟道晶体管。在另一些实施方案中，以举例方式示出的一些或全部金属氧化物半导体场效应晶体管(MOSFET)器件可以被双极结型晶体管(BJT)、绝缘栅场效应晶体管(IGFET)、或其他能提供有效的开关功能的器件结构所代替。再者，集成电路和电源转换器器件领域的技术人员会理解：晶体管器件——例如在图中以举例方式示出的晶体管器件——可以与其他晶体管器件结构集成，或者以一方式被制作或配置，使得不同的器件共用共同的连接件和半导体区(例如，N阱、衬底等等)。
在本发明的语境中，当晶体管在“关断状态”或“关断”时，晶体管不能传导电流。相反地，当晶体管在“导通状态”或“导通”时，晶体管能够传导电流。在一个实施例中，高电压晶体管包括N沟道金属氧化物半导体场效应晶体管(MOSFET)，其中在第一端、源极和第二端、漏极之间支撑有高电压。
对于本公开而言，“地”或“地电位”指代参考电压或电位，电路或集成电路的所有其他电压或电位均相对于该参考电压或电位而被限定或测量。
图1图解说明在集成电路(IC)100上用于产生直流电源供电电压的交流/直流电源转换器的实施例方块图。如图所示，IC 100包括整流器/稳压器电路101，其被联接以接收外部产生的交流输入电压VIN，该电压被施加到输入端或输入引脚114和115两端。在一个实施例中，输入电压VIN可以是普通交流线电压(例如，交流85V-交流265V；50-60Hz)。在又一个实施例中，IC100可以在三相系统中实现。在另一个实施例中，IC100可以是单片集成电路。如所示出的，整流器/稳压器电路101功能是为交流输入电压VIN提供整流，并对端111和112两端的输出电压VOUT进行稳压。换句话说，交流输入电压VIN被转换为直流输出电压VOUT，以使输出信号的极性保持不变(正)。
如图所示，传感器电路102被联接在端111和112之间，以接收从整流器/稳压器电路101输出的直流电压，并根据直流输出电压VOUT输出反馈信号FB，VOUT在输出端111和112两端间提供。例如，稳定直流电压VOUT可以被配置为在端111具有低电压(例如5V)(相对于接地的端112(0V)而言)的供电电压。应理解，在输出节点111和112两端产生的输出电压VOUT可以被用作IC100内部电路的运行所用的供电电压。在另一个实施例中，输出电压VOUT可以被用作IC100外部的电路的运行所用的供电电压。
图2图解说明在集成电路200中用于产生稳定直流输出电压VOUT的交流/直流电源转换器的示例性概略电路原理图。如所示，集成电路200包括整流器/稳压器电路201和传感器202，其分别是图1中电源转换器100的整流器/稳压器电路101和传感器102的可能的实施方式。在这个实施例中，整流器/稳压器电路201被显示为包括开关元件204和205，其每一个具有一个连接末端或连接侧，它们分别被连接到端214和215。如图所示，开关元件204和205包括第一和第二电流源217和219，其被联接以分别接收来自输入端214和215的输入电压VIN。如进一步所示的，开关元件204和205还包括开关SW1和SW2，其被分别联接到电流源217和219。
在一个实施方案中，电流源217和219是恒流源，其根据输入电压VIN的极性而选择性地提供恒定充电电流。例如，当输入电压VIN在端214处相对于端215具有较高电位时，电流源217可以提供恒定充电电流。类似地，当输入电压VIN在端215处相对于端214处于较高电位时，电流源219可以提供恒定充电电流。在另一个实施例中，由电流源217和219产生的充电电流的大小可以依赖于输入电压VIN。
开关SW1和SW2被反馈信号FB控制。在运行中，当SW1导通并且电流源217正在提供充电电流时，开关元件204提供恒定充电电流到电容器CSUPPLY。开关SW1根据反馈信号FB限制来自电流源217的充电电流的流动。类似地，当SW2导通并且电流源219正在提供电流时，开关元件205提供恒定充电电流到电容器CSUPPLY。开关SW2根据反馈信号FB限制来自电流源219的充电电流的流动。在一个实施方案中，基于输入电压VIN的极性，反馈信号FB可以被分成两个独立地控制开关204和205的独立的信号。
整流器/稳压器电路201也包括二极管元件D1和D2，其各自的阴极分别连接到输入端215和214。二极管D1和D2的阳极在节点212处共同接地。在一个实施例中，二极管元件D1和D2是集成电路200的衬底材料的体二极管。在运行中，二极管元件D1和D2被联接，为流经供电电容器CSUPPLY的充电电流提供完整的回路。供电电容器CSUPPLY被示出为联接在输出节点或端211和212之间，以提供稳定输出电压VOUT(直流)。
本领域的普通技术人员会理解，当二极管元件D1或D2是导通时，流经D1或D2的电流是由少数载流子组成的衬底电流。为防止该衬底电流不利地影响集成电路100上的其他电路，可以在集成电路100的布图中利用普通的双保护轨(rail)，以限制或减弱衬底电流。例如，在一个实施方案中，集成电路100用P型衬底制作，N+/N-阱和P+双保护轨可以在二极管元件D1和D2周围形成。所述双保护轨可以是在防静电(ESD)保护电路中普遍使用的类型。应理解，用来实现双保护轨的尺寸和面积在不同的实施方案中可以变化，这依赖于要求的限制和衰减的级别。总体来说，较大的双保护轨面积提供较高级别的限制/衰减。
继续图2中的实施例，反馈电路207被示为联接在供电电容器CSUPPLY两端。在运行中，反馈电路207根据对输出电压VOUT的检测而输出反馈信号FB。反馈信号FB被联接以断开或闭合开关SW1和SW2。例如，在输入电压VIN的第一相位期间，当开关SW1和SW2闭合并且输入端214的电压相对于端215的电压为高时，电流源217导通，并且充电电流输出到供电电容器CSUPPLY。在这种情况下，充电电流在流经供电电容器CSUPPLY并经过二极管元件D1回到端215的一个路径中流动，借此对供电电容器CSUPPLY充电。
类似的，在输入电压VIN的第二相位期间，当开关SW1和SW2闭合并且输入端215的电压相对于端214的电压为高时，电流源219导通，并且充电电流又输出到供电电容器CSUPPLY。在这种情况下，充电电流在流经供电电容器CSUPPLY并经过二极管元件D2回到端214的一个路径中流动，借此对供电电容器CSUPPLY充电。
当输出电压VOUT在目标稳定值(例如5V)处或者之上时，反馈元件207输出反馈信号FB以关断(断开)开关SW1和SW2，这防止供电电容器CSUPPLY进一步充电的发生。当节点211处的电压电位落到目标稳定值以下时，反馈元件207输出反馈信号FB以接通(闭合)开关SW1和SW2，因此，恢复供电电容器CSUPPLY的充电。只要集成电路200保持通电，图2中实施例示出的电路的运行就可以按照该方式持续。
图3图解说明交流/直流电源转换器电路300的示例性详细电路原理图。集成电路300是图1中集成电路100和图2中集成电路200的一个可能的实施方式。如图所示，集成电路300包括整流器/稳压器电路301和传感器电路302。在图3中的实施方案中，整流器/稳压器电路301的开关元件304和305的每一个均被示为由结型场效应晶体管(JFET)来实现，所述JFET连接到一电阻器和一N沟道金属氧化物半导体场效应晶体管(MOSFET)。例如，开关元件304可以包括N-JFETJ1，其具有联接到输入端314的第一端D(漏极)，联接到地节点312的第二端G(栅极)，和联接到电阻器R1的第一末端和MOSFET S1的漏极的第三端S(源极)。电阻器R1的第二末端被联接到MOSFET S1的栅极。MOSFET S1的源极S被联接到节点311。同样地，开关元件305包括N-JFET J2，其具有联接到输入端315的第一端D(漏极)，接地的第二端G(栅极)，和联接到MOSFET S2的漏极的第三端S(源极)。电阻器R2显示为被联接在MOSFET S2的栅极和漏极之间。MOSFETS2的源极S被联接到节点311。
二极管元件D1和D2被示为将其阳极连接到地节点312，且将其阴极分别连接到输入端315和314。在一个实施例中，二极管元件D1和D2被实施为寄生衬底二极管；即，集成电路300的P型衬底是D1和D2的阳极，而每个二极管元件D1和D2的阴极分别包括相关联的JFET，J1和J2的N型漏极区。换句话说，二极管元件D1是pn结，其包括集成电路300的P型衬底和JFET J2的N型漏极区。同样地，二极管元件D2是pn结，其包括集成电路300的P型衬底和JFET J1的N型漏极区。如上关于图2中实施例所述，包括N+/N-阱和P+区的双保护轨可以在集成电路300的布图中JFET J1和J2的每一个周围形成，以限制或减弱流经二极管元件D1和D2的衬底电流。
在图3中的实施例中，JFET J1和J2的每一个可以与其相关联的MOSFET集成。换句话说，开关元件304和305可以由单个集成器件结构实现，所述结构包括共用一个共同的N型阱区的两个元件。在一个实施方案中，开关元件304可以能够耐受J1的漏极D和S1的源极S两端的超过1000V的电压。类似地，开关元件305可以能够耐压超过J2的漏极D和S2的源极S两端的1000V电压。在另一个实施例中，JFET J1和J2可以是集成电路300上执行不同功能的分立的高电压电路和/或器件的一部分。
在图3中的实施方案中，电压传感器电路302包括在输出端311和312两端连接的供电电容器CSUPPLY。电压传感器电路302还包括比较器320，其被配置为使负输入联接到参考电压VREF，且正输入连接到节点321。节点321提供相对于地端312的反馈电压VFB。在示出的实施例中，反馈电压VFB是稳定输出电压VOUT的表示，并且从电阻分压器网络产生，所述电阻分压器网络包括电阻R3和R4，R3和R4串联联接在输出端311和312两端。在运行中，比较器320产生的输出信号FB驱动N沟道MOSFET S3和S4的栅极。MOSFET S3和S4的源极被联接到地端312。MOSFET S3和S4的漏极分别被联接到MOSFET S1和S2的栅极。在一个实施方案中，MOSFET S3和S4是控制MOSFET S1和S2栅极处的电压，并借以允许开关S1和S2接通和关断的电平转移电路。
在运行中，电压传感器302通过比较出现在节点321的电压VFB与参考电压VREF来运行。在一个实施方案中，选择电阻R3和R4的值，以将输出电压VOUT稳定在一期望的目标值处。当节点321的电压超过参考电压VREF时，指示输出电压VOUT已经超出其目标稳定值，比较器320导通MOSFET S3和S4，关断MOSFET S1和S2，借此使得开关元件304和305禁用。相反地，当节点321的电压VFB落到VREF以下时，由于输出电压VOUT落到目标稳定值以下，比较器320的输出落到低点，导致MOSFET S3和S4关断。当MOSFET S3和S4都在关断状态时，根据输入交流电压VIN的极性，开关元件304或开关元件305传导充电电流。
当端314的电压电位相对于端315为高时，开关304导通，并且开关305不导通，并且供电电容器CSUPPLY被从端314流经JFET J1、MOSFET S1和供电电容器CSUPPLY并经过二极管D1返回到端315的电流充电。另一方面，当端315的电压电位相对于节点314为高时，开关304不导通，开关305导通，并且供电电容器CSUPPLY被从端315流经JFETJ2、MOSFET S2和供电电容器CSUPPLY并经过二极管D2返回到端314的电流充电。
尽管已经连同特定的实施方案描述本发明，本领域的技术人员应理解，多种修改和变更无疑都在本发明的范围内。因此，说明书和附图应被认为是说明性的而不是限制性念。

Claims (15)

1.一种集成电路(IC)，包括：
一整流器/稳压器电路，其被联接以接收交流电源电压，并输出稳定直流电压，所述整流器/稳压器电路包括第一和第二开关元件，当所述开关元件启用时，其选择性地提供充电电流；以及
一传感器电路，其被联接以检测所述稳定直流电压并产生一联接到所述整流器/稳压器电路的反馈控制信号，当所述稳定直流电压在一目标电压之上时，所述反馈控制信号启用所述第一和第二开关元件，并且当所述稳定直流电压在所述目标电压之下时，所述反馈控制信号禁用所述第一和第二开关元件。
2.如权利要求1中的集成电路，其中所述集成电路是单片电源集成电路。
3.如权利要求1中的集成电路，其中所述第一和第二开关元件分别联接到第一和第二端，所述第一和第二端被联接以接收所述交流电源电压。
4.如权利要求3中的集成电路，其中当所述第一和第二端之间的电位差是正值并且所述第一开关元件是启用的时候，所述第一开关元件是导通的，当所述第一和第二端之间的电位差是负值并且所述第一开关元件是启用的时候，所述第一开关元件是不导通的，当所述第一和第二端之间的电位差是负值并且所述第二开关元件是启用的时候，所述第二开关元件是导通的，当所述第一和第二端之间的电位差是正值并且所述第二开关元件是启用的时候，所述第二开关元件是不导通的。
5.如权利要求4中的集成电路，其中所述传感器电路包括一供电电容器，其被联接到所述整流器/稳压器电路，所述稳定直流电压在所述供电电容器两端产生。
6.如权利要求5中的集成电路，其中所述传感器电路还包括一反馈电路，其调节所述供电电容器的充电，以保持稳定输出电压。
7.一种集成电路，其用于在供电节点从交流输入电压中产生稳定直流电压，包括：
一整流器/稳压器电路，其被联接，以接收第一和第二输入端处的所述交流输入电压，所述整流器/稳压器电路包括：
第一开关元件，其包括第一晶体管，所述第一晶体管被联接在所述第一输入端和所述供电节点之间；
第二开关元件，其包括第二晶体管，所述第二晶体管被联接在所述第二输入端和所述供电节点之间；以及
一传感器电路，其被联接在所述供电节点和一地节点之间，所述传感器电路可操作以检测在所述供电节点处的所述稳定直流电压，并从中产生一反馈信号，所述反馈信号被联接以控制所述第一和第二开关元件；
其中当所述稳定直流电压在一目标电压之上时，所述反馈信号禁用所述第一和第二开关元件，以阻止提供充电电流到所述供电节点，并且当所述稳定直流电压在所述目标电压之下时，所述反馈信号启用所述第一和第二开关元件，以提供充电电流到所述供电节点。
8.如权利要求7中的集成电路，其中所述整流器/稳压器电路还包括第一和第二衬底二极管，其每一个具有联接到地节点的阳极，所述第一二极管的阴极被联接到所述第一输入端，并且所述第二二极管的阴极被联接到所述第二输入端，当所述第一和第二晶体管启用时，所述充电电流交替流经所述第一和第二衬底二极管。
9.如权利要求7中的集成电路，其中所述第一开关元件还包括一结型场效应晶体管(JFET)，其被联接在所述第一输入端和所述第一晶体管的漏极之间，所述第二开关元件还包括第二结型场效应晶体管，其被联接在所述第二输入端和所述第二晶体管的漏极之间。
10.如权利要求7中的集成电路，其中所述传感器电路还包括一供电电容器，其被联接在所述供电节点和地节点之间。
11.如权利要求7中的集成电路，其中所述传感器电路还包括：
一分压器，其被联接在所述供电节点和地节点之间，所述分压器从所述稳定直流电压产生反馈输入电压；以及
一比较器，其通过比较所述反馈输入电压和参考电压，产生所述反馈信号。
12.如权利要求7中的集成电路，其中所述第一和第二衬底二极管的阳极包括所述电源集成电路的P型衬底，所述第一二极管的阴极包括所述第一晶体管的N型阱区，所述第二二极管的阴极包括所述第二晶体管的N型阱区。
13.一种集成电路，其用于在供电节点从交流输入电压中产生稳定直流电压，包括：
一整流器/稳压器电路，其被联接，以接收第一和第二输入端处的交流输入电压，所述整流器/稳压器电路包括：
第一开关元件，其包括第一MOSFET，所述第一MOSFET被联接在所述第一输入端和所述供电节点之间；
第二开关元件，其包括第二MOSFET，所述第二MOSFET被联接在所述第二输入端和所述供电节点之间；
第一和第二衬底二极管，其每一个具有联接到地节点的阳极，所述第一二极管的阴极被联接到所述第一输入端，并且所述第二二极管的阴极被联接到所述第二输入端；
一传感器电路，其被联接在所述供电节点和一地节点之间，所述传感器电路可操作以检测在所述供电节点处的所述稳定直流电压，并从中产生一反馈控制信号，所述反馈信号被联接以控制所述第一和第二开关元件，所述传感器电路包括：
一电容器，其被联接在所述供电节点和所述地节点之间；
一分压器，其被联接在所述供电节点和地节点之间，所述分压器从所述稳定直流电压中产生反馈输入电压；
一比较器，其通过比较所述反馈输入电压和参考电压，产生所述反馈信号；
其中当所述稳定直流电压在一目标电压之上时，所述反馈信号禁用所述第一和第二开关元件，以阻止提供充电电流到所述供电节点，并且当所述稳定直流电压在所述目标电压之下时，所述反馈信号启用所述第一和第二开关元件，以提供充电电流到所述供电节点。
14.如权利要求13中的集成电路，其中所述充电电流在所述电容器充电期间交替流经所述第一和第二衬底二极管。
15.如权利要求13中的集成电路，其中所述开关元件还包括一结型场效应晶体管(JFET)，其被联接在所述第一输入端和所述第一MOSFET的漏极之间，所述第二开关元件还包括第二JFET，其被联接在所述第二输入端和所述第二MOSFET的漏极之间。
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KR20110037902A (ko) 2011-04-13
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US20110080761A1 (en) 2011-04-07
US8634218B2 (en) 2014-01-21

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