CN102020669B - 工业化制备三甲基镓的方法 - Google Patents
工业化制备三甲基镓的方法 Download PDFInfo
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- CN102020669B CN102020669B CN 201010600017 CN201010600017A CN102020669B CN 102020669 B CN102020669 B CN 102020669B CN 201010600017 CN201010600017 CN 201010600017 CN 201010600017 A CN201010600017 A CN 201010600017A CN 102020669 B CN102020669 B CN 102020669B
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- CN
- China
- Prior art keywords
- gallium
- reaction
- trimethyl
- trimethyl gallium
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 30
- 239000002904 solvent Substances 0.000 claims abstract description 25
- 229910000861 Mg alloy Inorganic materials 0.000 claims abstract description 16
- FWLGASJILZBATH-UHFFFAOYSA-N gallium magnesium Chemical compound [Mg].[Ga] FWLGASJILZBATH-UHFFFAOYSA-N 0.000 claims abstract description 16
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 42
- 238000010992 reflux Methods 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 11
- 238000013019 agitation Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 claims description 4
- 150000001350 alkyl halides Chemical class 0.000 abstract description 11
- 239000002994 raw material Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 5
- 230000002269 spontaneous effect Effects 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 3
- 238000002485 combustion reaction Methods 0.000 abstract description 2
- 239000004210 ether based solvent Substances 0.000 abstract 1
- 150000002170 ethers Chemical class 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 12
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000003825 pressing Methods 0.000 description 7
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000004871 chemical beam epitaxy Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- RDHPKYGYEGBMSE-UHFFFAOYSA-N bromoethane Chemical compound CCBr RDHPKYGYEGBMSE-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010555 transalkylation reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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CN 201010600017 CN102020669B (zh) | 2010-12-22 | 2010-12-22 | 工业化制备三甲基镓的方法 |
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CN 201010600017 CN102020669B (zh) | 2010-12-22 | 2010-12-22 | 工业化制备三甲基镓的方法 |
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CN102020669A CN102020669A (zh) | 2011-04-20 |
CN102020669B true CN102020669B (zh) | 2013-01-09 |
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CN 201010600017 Active CN102020669B (zh) | 2010-12-22 | 2010-12-22 | 工业化制备三甲基镓的方法 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2559682B1 (en) * | 2011-08-15 | 2016-08-03 | Rohm and Haas Electronic Materials LLC | Organometallic compound preparation |
EP2559681B1 (en) * | 2011-08-15 | 2016-06-22 | Dow Global Technologies LLC | Organometallic compound preparation |
CN102503969B (zh) * | 2011-11-30 | 2016-01-27 | 苏州普耀光电材料有限公司 | 一步法制备高纯三甲基镓的方法 |
CN103114214B (zh) * | 2012-12-28 | 2014-06-18 | 中国神华能源股份有限公司 | 一种超高纯镓的生产方法 |
CN103145745A (zh) * | 2013-03-06 | 2013-06-12 | 江苏南大光电材料股份有限公司 | 工业化制备高纯金属有机化合物的方法 |
CN103333184A (zh) * | 2013-07-05 | 2013-10-02 | 江苏南大光电材料股份有限公司 | 高效低成本生产三甲基镓的方法 |
CN115166075B (zh) * | 2022-06-24 | 2024-02-27 | 南大光电半导体材料有限公司 | Mo源中氯离子含量的检测方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2123423A (en) * | 1982-06-29 | 1984-02-01 | Secr Defence | Purification of trialkyl gallium |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5248800A (en) * | 1991-11-19 | 1993-09-28 | Shell Research Limited | Process for the preparation of trialkyl gallium compounds |
US7667063B2 (en) * | 2005-03-23 | 2010-02-23 | Nichia Corporation | Method for producing trialkyl gallium |
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2010
- 2010-12-22 CN CN 201010600017 patent/CN102020669B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2123423A (en) * | 1982-06-29 | 1984-02-01 | Secr Defence | Purification of trialkyl gallium |
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CN102020669A (zh) | 2011-04-20 |
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Application publication date: 20110420 Assignee: Suzhou ronghua Leasing Co.,Ltd. Assignor: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. Contract record no.: X2021320010037 Denomination of invention: Industrialized preparation of Trimethylgallium Granted publication date: 20130109 License type: Exclusive License Record date: 20211116 |
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Denomination of invention: Industrialized preparation of Trimethylgallium Effective date of registration: 20211116 Granted publication date: 20130109 Pledgee: Suzhou ronghua Leasing Co.,Ltd. Pledgor: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. Registration number: Y2021320010476 |
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Assignee: Suzhou ronghua Leasing Co.,Ltd. Assignor: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. Contract record no.: X2021320010037 Date of cancellation: 20240105 |
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Granted publication date: 20130109 Pledgee: Suzhou ronghua Leasing Co.,Ltd. Pledgor: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. Registration number: Y2021320010476 |
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