CN102007614B - 使用两个掩模的磁性隧道结元件的制造方法 - Google Patents

使用两个掩模的磁性隧道结元件的制造方法 Download PDF

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Publication number
CN102007614B
CN102007614B CN200980112999.6A CN200980112999A CN102007614B CN 102007614 B CN102007614 B CN 102007614B CN 200980112999 A CN200980112999 A CN 200980112999A CN 102007614 B CN102007614 B CN 102007614B
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China
Prior art keywords
electrode
mtj
layer
mask
barrier layer
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Expired - Fee Related
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CN200980112999.6A
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English (en)
Chinese (zh)
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CN102007614A (zh
Inventor
升·H·康
李霞
顾时群
马修·M·诺瓦克
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CN200980112999.6A 2008-04-18 2009-04-15 使用两个掩模的磁性隧道结元件的制造方法 Expired - Fee Related CN102007614B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4616708P 2008-04-18 2008-04-18
US61/046,167 2008-04-18
US12/405,461 US8125040B2 (en) 2008-04-18 2009-03-17 Two mask MTJ integration for STT MRAM
US12/405,461 2009-03-17
PCT/US2009/040612 WO2009129283A1 (en) 2008-04-18 2009-04-15 Manufacturing method of a magnetic tunnel junction element using two masks

Publications (2)

Publication Number Publication Date
CN102007614A CN102007614A (zh) 2011-04-06
CN102007614B true CN102007614B (zh) 2014-07-16

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CN200980112999.6A Expired - Fee Related CN102007614B (zh) 2008-04-18 2009-04-15 使用两个掩模的磁性隧道结元件的制造方法

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Country Link
US (1) US8125040B2 (enExample)
EP (2) EP2800159A1 (enExample)
JP (3) JP2011518440A (enExample)
KR (1) KR101200008B1 (enExample)
CN (1) CN102007614B (enExample)
TW (1) TW201007730A (enExample)
WO (1) WO2009129283A1 (enExample)

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CN109994476B (zh) * 2017-12-29 2021-03-16 上海磁宇信息科技有限公司 一种制备磁性随机存储器阵列单元的方法
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Also Published As

Publication number Publication date
US20090261437A1 (en) 2009-10-22
EP2277211B1 (en) 2014-10-08
JP2011518440A (ja) 2011-06-23
WO2009129283A1 (en) 2009-10-22
EP2800159A1 (en) 2014-11-05
JP2015144287A (ja) 2015-08-06
JP2014160839A (ja) 2014-09-04
KR20110002864A (ko) 2011-01-10
CN102007614A (zh) 2011-04-06
EP2277211A1 (en) 2011-01-26
TW201007730A (en) 2010-02-16
US8125040B2 (en) 2012-02-28
KR101200008B1 (ko) 2012-11-12

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