KR101200008B1 - ２개의 마스크들을 사용하여 자기 터널 접합 엘리먼트를 제조하기 위한 방법 - Google Patents

２개의 마스크들을 사용하여 자기 터널 접합 엘리먼트를 제조하기 위한 방법 Download PDF

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KR101200008B1
KR101200008B1 KR1020107025861A KR20107025861A KR101200008B1 KR 101200008 B1 KR101200008 B1 KR 101200008B1 KR 1020107025861 A KR1020107025861 A KR 1020107025861A KR 20107025861 A KR20107025861 A KR 20107025861A KR 101200008 B1 KR101200008 B1 KR 101200008B1
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electrode
mtj
tunnel junction
mram
magnetic tunnel
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KR20110002864A (ko
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승 에이치. 강
시아 리
시쿤 구
매튜 엠. 노와크
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콸콤 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
KR1020107025861A 2008-04-18 2009-04-15 ２개의 마스크들을 사용하여 자기 터널 접합 엘리먼트를 제조하기 위한 방법 Expired - Fee Related KR101200008B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4616708P 2008-04-18 2008-04-18
US61/046,167 2008-04-18
US12/405,461 US8125040B2 (en) 2008-04-18 2009-03-17 Two mask MTJ integration for STT MRAM
US12/405,461 2009-03-17
PCT/US2009/040612 WO2009129283A1 (en) 2008-04-18 2009-04-15 Manufacturing method of a magnetic tunnel junction element using two masks

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KR20110002864A KR20110002864A (ko) 2011-01-10
KR101200008B1 true KR101200008B1 (ko) 2012-11-12

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US (1) US8125040B2 (enExample)
EP (2) EP2800159A1 (enExample)
JP (3) JP2011518440A (enExample)
KR (1) KR101200008B1 (enExample)
CN (1) CN102007614B (enExample)
TW (1) TW201007730A (enExample)
WO (1) WO2009129283A1 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100157644A1 (en) * 2008-12-19 2010-06-24 Unity Semiconductor Corporation Configurable memory interface to provide serial and parallel access to memories
US9991360B2 (en) * 2009-06-26 2018-06-05 Cornell University Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation
US8558331B2 (en) 2009-12-08 2013-10-15 Qualcomm Incorporated Magnetic tunnel junction device
US8681536B2 (en) * 2010-01-15 2014-03-25 Qualcomm Incorporated Magnetic tunnel junction (MTJ) on planarized electrode
JP2011238679A (ja) * 2010-05-07 2011-11-24 Fujitsu Semiconductor Ltd 磁気記憶装置の製造方法及び磁気記憶装置
US8722543B2 (en) 2010-07-30 2014-05-13 Headway Technologies, Inc. Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices
US8547736B2 (en) * 2010-08-03 2013-10-01 Qualcomm Incorporated Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
US8928100B2 (en) * 2011-06-24 2015-01-06 International Business Machines Corporation Spin transfer torque cell for magnetic random access memory
US8921959B2 (en) * 2011-07-26 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device and fabrication method thereof
US9202562B2 (en) 2012-04-18 2015-12-01 Advanced Integrated Memory Inc. Method to reduce read error rate for semiconductor resistive memory
US9047964B2 (en) 2012-08-20 2015-06-02 Qualcomm Incorporated Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness
US8901687B2 (en) 2012-11-27 2014-12-02 Industrial Technology Research Institute Magnetic device with a substrate, a sensing block and a repair layer
GB2526456B (en) * 2013-03-15 2020-07-15 Intel Corp Logic chip including embedded magnetic tunnel junctions
US9172033B2 (en) 2013-07-03 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device and fabrication method thereof
US8988835B1 (en) * 2013-10-14 2015-03-24 International Business Machines Corporation Contact recording tunnel magnetoresistive sensor with layer of refractory metal
CN104882538B (zh) * 2014-02-28 2017-09-22 中芯国际集成电路制造(上海)有限公司 环型磁性随机存取存储器单元结构的制造方法
KR102149195B1 (ko) 2014-03-04 2020-08-28 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US9269893B2 (en) * 2014-04-02 2016-02-23 Qualcomm Incorporated Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch
CN105206741B (zh) * 2014-06-23 2019-02-12 中芯国际集成电路制造(上海)有限公司 磁性隧道结单元和制备磁性隧道结单元的方法
US10043967B2 (en) * 2014-08-07 2018-08-07 Qualcomm Incorporated Self-compensation of stray field of perpendicular magnetic elements
EP3311425A4 (en) 2015-06-19 2019-02-27 Intel Corporation CAP MAGNETIC MEMORY
US9905751B2 (en) 2015-10-20 2018-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic tunnel junction with reduced damage
CN106676532B (zh) * 2015-11-10 2019-04-05 江苏鲁汶仪器有限公司 金属刻蚀装置及方法
US9853210B2 (en) * 2015-11-17 2017-12-26 International Business Machines Corporation Reduced process degradation of spin torque magnetoresistive random access memory
US9515252B1 (en) * 2015-12-29 2016-12-06 International Business Machines Corporation Low degradation MRAM encapsulation process using silicon-rich silicon nitride film
US9805795B2 (en) 2016-01-08 2017-10-31 Samsung Electronics Co., Ltd. Zero leakage, high noise margin coupled giant spin hall based retention latch
US9711713B1 (en) * 2016-01-15 2017-07-18 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure, electrode structure and method of forming the same
US10522749B2 (en) 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10043851B1 (en) 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
US10359699B2 (en) 2017-08-24 2019-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity
US10585630B2 (en) 2017-09-11 2020-03-10 Samsung Electronics Co., Ltd. Selectorless 3D stackable memory
US10038138B1 (en) 2017-10-10 2018-07-31 Headway Technologies, Inc. High temperature volatilization of sidewall materials from patterned magnetic tunnel junctions
US10134981B1 (en) 2017-10-20 2018-11-20 Headway Technologies, Inc. Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance magnetoresistive random access memory (MRAM) devices
US10879077B2 (en) 2017-10-30 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Planarization apparatus and planarization method thereof
US10325639B2 (en) 2017-11-20 2019-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Initialization process for magnetic random access memory (MRAM) production
US10153427B1 (en) 2017-12-28 2018-12-11 Headway Technologies, Inc. Magnetic tunnel junction (MTJ) performance by introducing oxidants to methanol with or without noble gas during MTJ etch
CN109994476B (zh) * 2017-12-29 2021-03-16 上海磁宇信息科技有限公司 一种制备磁性随机存储器阵列单元的方法
US10475991B2 (en) 2018-02-22 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices
US10790002B2 (en) 2018-06-21 2020-09-29 Samsung Electronics Co., Ltd. Giant spin hall-based compact neuromorphic cell optimized for differential read inference
US11296277B2 (en) 2018-10-16 2022-04-05 Samsung Electronics Co., Ltd. Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same
US10971176B2 (en) 2019-02-21 2021-04-06 International Business Machines Corporation Tunnel magnetoresistive sensor with adjacent gap having chromium alloy seed layer and refractory material layer
US11805704B2 (en) * 2020-05-08 2023-10-31 International Business Machines Corporation Via interconnects for a magnetoresistive random-access memory device
US11569442B2 (en) 2020-06-17 2023-01-31 International Business Machines Corporation Dielectric retention and method of forming memory pillar
US12464955B2 (en) * 2021-12-09 2025-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic tunnel junction device and method of forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040043526A1 (en) 2002-08-29 2004-03-04 Applied Materials, Inc. Method of patterning a layer of magnetic material

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5013494B2 (ja) * 2001-04-06 2012-08-29 ルネサスエレクトロニクス株式会社 磁性メモリの製造方法
US6631055B2 (en) * 2001-06-08 2003-10-07 International Business Machines Corporation Tunnel valve flux guide structure formed by oxidation of pinned layer
JP2004128229A (ja) * 2002-10-02 2004-04-22 Nec Corp 磁性メモリ及びその製造方法
US7394626B2 (en) * 2002-11-01 2008-07-01 Nec Corporation Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
US6911156B2 (en) 2003-04-16 2005-06-28 Freescale Semiconductor, Inc. Methods for fabricating MRAM device structures
DE60323162D1 (de) * 2003-06-24 2008-10-02 Ibm Selbstausgerichtete leitfähige linien für magnetische direktzugriffsspeicherbausteine auf fet-basis und herstellungsverfahren dafür
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
US7259062B2 (en) 2003-10-24 2007-08-21 Hewlett-Packard Development Company, Lp. Method of making a magnetic tunnel junction device
US20050090111A1 (en) * 2003-10-24 2005-04-28 Heon Lee Magnetic tunnel junction device with etch stop layer and dielectric spacer
US20050205952A1 (en) * 2004-03-19 2005-09-22 Jae-Hyun Park Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the same
US7105903B2 (en) * 2004-11-18 2006-09-12 Freescale Semiconductor, Inc. Methods and structures for electrical communication with an overlying electrode for a semiconductor element
KR100647319B1 (ko) 2005-02-05 2006-11-23 삼성전자주식회사 스핀 분극 전류를 이용한 멀티 비트 자기 메모리 소자와그 제조 및 구동 방법
US7285836B2 (en) * 2005-03-09 2007-10-23 Maglabs, Inc. Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing
JP4677589B2 (ja) 2005-03-18 2011-04-27 独立行政法人科学技術振興機構 伝送回路一体型マイクロ波発生素子並びにマイクロ波検出方法、マイクロ波検出回路、マイクロ波検出素子及び伝送回路一体型マイクロ波検出素子
JP4659518B2 (ja) * 2005-05-24 2011-03-30 シャープ株式会社 磁気抵抗効果素子及びその製造方法
KR100655438B1 (ko) * 2005-08-25 2006-12-08 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
US7511990B2 (en) * 2005-09-30 2009-03-31 Everspin Technologies, Inc. Magnetic tunnel junction temperature sensors
JP4991155B2 (ja) * 2006-01-19 2012-08-01 株式会社東芝 半導体記憶装置
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
JP4560025B2 (ja) * 2006-09-29 2010-10-13 株式会社東芝 磁気ランダムアクセスメモリ及びその製造方法
US7852662B2 (en) * 2007-04-24 2010-12-14 Magic Technologies, Inc. Spin-torque MRAM: spin-RAM, array
US7723128B2 (en) * 2008-02-18 2010-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ formed capping layer in MTJ devices
US8057925B2 (en) * 2008-03-27 2011-11-15 Magic Technologies, Inc. Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
US20090251950A1 (en) * 2008-04-08 2009-10-08 Ulrich Klostermann Integrated Circuit, Memory Cell Arrangement, Thermal Select Magneto-Resistive Memory Cell, Method of Operating a Thermal Select Magneto-Resistive Memory Cell, and Method of Manufacturing a Thermal Select Magneto-Resistive Memory Cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040043526A1 (en) 2002-08-29 2004-03-04 Applied Materials, Inc. Method of patterning a layer of magnetic material

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US20090261437A1 (en) 2009-10-22
EP2277211B1 (en) 2014-10-08
JP2011518440A (ja) 2011-06-23
WO2009129283A1 (en) 2009-10-22
EP2800159A1 (en) 2014-11-05
JP2015144287A (ja) 2015-08-06
JP2014160839A (ja) 2014-09-04
KR20110002864A (ko) 2011-01-10
CN102007614B (zh) 2014-07-16
CN102007614A (zh) 2011-04-06
EP2277211A1 (en) 2011-01-26
TW201007730A (en) 2010-02-16
US8125040B2 (en) 2012-02-28

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