CN101997508B - 封装件及封装件的制造方法、压电振动器、振荡器、电子设备及电波钟 - Google Patents
封装件及封装件的制造方法、压电振动器、振荡器、电子设备及电波钟 Download PDFInfo
- Publication number
- CN101997508B CN101997508B CN201010269258.3A CN201010269258A CN101997508B CN 101997508 B CN101997508 B CN 101997508B CN 201010269258 A CN201010269258 A CN 201010269258A CN 101997508 B CN101997508 B CN 101997508B
- Authority
- CN
- China
- Prior art keywords
- gettering material
- cavity
- piezoelectric vibrator
- gettering
- vibration piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 163
- 238000005247 gettering Methods 0.000 claims abstract description 152
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 230000004913 activation Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 127
- 230000008569 process Effects 0.000 claims description 39
- 238000004806 packaging method and process Methods 0.000 claims description 30
- 238000001704 evaporation Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 238000001914 filtration Methods 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 49
- 230000015572 biosynthetic process Effects 0.000 description 30
- 230000005284 excitation Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000006870 function Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000004891 communication Methods 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910000986 non-evaporable getter Inorganic materials 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910007727 Zr V Inorganic materials 0.000 description 1
- -1 Zr-V-Fe or Zr-V Chemical class 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000005433 ionosphere Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
-
- G—PHYSICS
- G04—HOROLOGY
- G04R—RADIO-CONTROLLED TIME-PIECES
- G04R20/00—Setting the time according to the time information carried or implied by the radio signal
- G04R20/08—Setting the time according to the time information carried or implied by the radio signal the radio signal being broadcast from a long-wave call sign, e.g. DCF77, JJY40, JJY60, MSF60 or WWVB
- G04R20/10—Tuning or receiving; Circuits therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0478—Resonance frequency in a process for mass production
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0492—Resonance frequency during the manufacture of a tuning-fork
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009194476A JP5534398B2 (ja) | 2009-08-25 | 2009-08-25 | パッケージ及びパッケージの製造方法、圧電振動子、発振器、電子機器、並びに電波時計 |
JP2009-194476 | 2009-08-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101997508A CN101997508A (zh) | 2011-03-30 |
CN101997508B true CN101997508B (zh) | 2015-06-24 |
Family
ID=43623793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010269258.3A Expired - Fee Related CN101997508B (zh) | 2009-08-25 | 2010-08-25 | 封装件及封装件的制造方法、压电振动器、振荡器、电子设备及电波钟 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8304965B2 (zh) |
JP (1) | JP5534398B2 (zh) |
CN (1) | CN101997508B (zh) |
TW (1) | TW201128944A (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4647677B2 (ja) * | 2008-08-11 | 2011-03-09 | 日本電波工業株式会社 | 圧電デバイス |
CN102197586B (zh) * | 2008-08-27 | 2014-03-05 | 精工电子水晶科技股份有限公司 | 压电振动器、振荡器、电子设备、电波钟以及压电振动器的制造方法 |
WO2010023732A1 (ja) * | 2008-08-27 | 2010-03-04 | セイコーインスツル株式会社 | 圧電振動子、圧電振動子の製造方法、発振器、電子機器および電波時計 |
WO2010097907A1 (ja) * | 2009-02-25 | 2010-09-02 | セイコーインスツル株式会社 | パッケージの製造方法、並びにパッケージ、圧電振動子、発振器、電子機器及び電波時計 |
JP2011029911A (ja) * | 2009-07-24 | 2011-02-10 | Seiko Instruments Inc | 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器および電波時計 |
JP2011029910A (ja) * | 2009-07-24 | 2011-02-10 | Seiko Instruments Inc | 圧電振動子、圧電振動子の製造方法、発振器、電子機器および電波時計 |
JP2011142591A (ja) * | 2010-01-08 | 2011-07-21 | Seiko Instruments Inc | 圧電振動子の製造方法、発振器、電子機器および電波時計 |
JP2012129481A (ja) * | 2010-12-17 | 2012-07-05 | Seiko Instruments Inc | 電子部品及びその製造方法 |
JP6230286B2 (ja) * | 2012-08-20 | 2017-11-15 | セイコーインスツル株式会社 | 電子デバイス及び電子デバイスの製造方法 |
JP6230285B2 (ja) * | 2012-08-24 | 2017-11-15 | セイコーインスツル株式会社 | 電子デバイス、memsセンサ及び電子デバイスの製造方法 |
US8847373B1 (en) * | 2013-05-07 | 2014-09-30 | Innovative Micro Technology | Exothermic activation for high vacuum packaging |
JP6135296B2 (ja) * | 2013-05-20 | 2017-05-31 | 富士通株式会社 | パッケージ構造及びパッケージ構造を基板に接合する方法 |
JP6365111B2 (ja) * | 2013-11-12 | 2018-08-01 | セイコーエプソン株式会社 | 配線基板の製造方法、配線基板、素子収納用パッケージ、電子デバイス、電子機器および移動体 |
TWI543305B (zh) * | 2014-02-27 | 2016-07-21 | 姜崇義 | 元件封裝方法及其結構 |
US9196556B2 (en) * | 2014-02-28 | 2015-11-24 | Raytheon Company | Getter structure and method for forming such structure |
US9718672B2 (en) * | 2015-05-27 | 2017-08-01 | Globalfoundries Singapore Pte. Ltd. | Electronic devices including substantially hermetically sealed cavities and getter films with Kelvin measurement arrangement for evaluating the getter films and methods for fabricating the same |
JP6672615B2 (ja) * | 2015-05-28 | 2020-03-25 | セイコーエプソン株式会社 | 電子デバイス、量子干渉装置、原子発振器および電子機器 |
JP6635605B2 (ja) * | 2017-10-11 | 2020-01-29 | 国立研究開発法人理化学研究所 | 電流導入端子並びにそれを備えた圧力保持装置及びx線撮像装置 |
CA3111475A1 (en) | 2018-09-28 | 2020-04-02 | Butterfly Network, Inc. | Fabrication techniques and structures for gettering materials in ultrasonic transducer cavities |
WO2020210470A1 (en) | 2019-04-12 | 2020-10-15 | Butterfly Network, Inc. | Bottom electrode via structures for micromachined ultrasonic transducer devices |
US11709074B2 (en) | 2021-01-07 | 2023-07-25 | Honeywell International Inc. | System and method for improved accuracy of detecting meter removal or physical tampering |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688708A (en) * | 1996-06-24 | 1997-11-18 | Motorola | Method of making an ultra-high vacuum field emission display |
CN1417944A (zh) * | 2001-10-31 | 2003-05-14 | 精工电子有限公司 | 压电谐振器及其制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001076650A (ja) * | 1998-10-20 | 2001-03-23 | Canon Inc | 画像表示装置とその製造方法 |
JP2003060472A (ja) * | 2001-08-08 | 2003-02-28 | Seiko Instruments Inc | 圧電振動子 |
JP2004066225A (ja) * | 2002-06-13 | 2004-03-04 | Lg Electronics Inc | ゲッタの組成物及び該ゲッタの組成物を利用した電界放出表示装置 |
US7508132B2 (en) * | 2003-10-20 | 2009-03-24 | Hewlett-Packard Development Company, L.P. | Device having a getter structure and a photomask |
JPWO2005124813A1 (ja) * | 2004-06-18 | 2008-04-17 | 株式会社東芝 | 画像表示装置および画像表示装置の製造方法 |
JP4696488B2 (ja) * | 2004-07-15 | 2011-06-08 | セイコーエプソン株式会社 | 圧電振動子の周波数調整方法および圧電振動子 |
JP2006086585A (ja) | 2004-09-14 | 2006-03-30 | Daishinku Corp | 表面実装型圧電振動デバイス |
JP5237965B2 (ja) * | 2007-12-04 | 2013-07-17 | セイコーインスツル株式会社 | 圧電振動子の製造方法 |
FR2952627A1 (fr) * | 2009-11-17 | 2011-05-20 | Commissariat Energie Atomique | Getter ayant deux temperatures d'activation et structure comportant ce getter |
-
2009
- 2009-08-25 JP JP2009194476A patent/JP5534398B2/ja not_active Expired - Fee Related
-
2010
- 2010-08-18 TW TW99127584A patent/TW201128944A/zh unknown
- 2010-08-25 US US12/868,310 patent/US8304965B2/en not_active Expired - Fee Related
- 2010-08-25 CN CN201010269258.3A patent/CN101997508B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688708A (en) * | 1996-06-24 | 1997-11-18 | Motorola | Method of making an ultra-high vacuum field emission display |
CN1417944A (zh) * | 2001-10-31 | 2003-05-14 | 精工电子有限公司 | 压电谐振器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101997508A (zh) | 2011-03-30 |
JP5534398B2 (ja) | 2014-06-25 |
US8304965B2 (en) | 2012-11-06 |
JP2011049666A (ja) | 2011-03-10 |
US20110050045A1 (en) | 2011-03-03 |
TW201128944A (en) | 2011-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101997508B (zh) | 封装件及封装件的制造方法、压电振动器、振荡器、电子设备及电波钟 | |
JP5237976B2 (ja) | 圧電振動子、圧電振動子の製造方法、発振器、電子機器及び電波時計 | |
JP4845478B2 (ja) | 圧電振動子、圧電振動子の製造方法、発振器、電子機器及び電波時計 | |
JP5135510B2 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
CN101946406B (zh) | 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 | |
CN101986561B (zh) | 压电振动器、电压振动器的制造方法、振荡器、电子设备及电波钟 | |
US20110050046A1 (en) | Piezoelectric vibrator, piezoelectric vibrator manufacturing method, oscillator, electronic device, radio-controlled timepiece | |
WO2010023727A1 (ja) | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 | |
CN102197589B (zh) | 压电振动器、压电振动器的制造方法、振荡器、电子设备及电波钟 | |
JP2011029910A (ja) | 圧電振動子、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
CN102142826B (zh) | 压电振动器、振荡器、电子设备及电波钟 | |
CN101997502B (zh) | 封装件的制造方法、压电振动器的制造方法、振荡器、电子设备及电波钟 | |
CN102195588A (zh) | 掩模材料、压电振动器、压电振动器的制造方法、振荡器、电子设备及电波钟 | |
CN102197585A (zh) | 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 | |
JP5162675B2 (ja) | 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器及び電波時計 | |
CN102694521A (zh) | 压电振动器、振荡器、电子设备及电波钟 | |
WO2009104328A1 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP5128671B2 (ja) | 圧電振動子、発振器、電子機器及び電波時計、並びに圧電振動子の製造方法 | |
CN101964639A (zh) | 电压振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 | |
JP5184648B2 (ja) | 圧電振動子の製造方法 | |
JP2014179706A (ja) | 圧電振動子、発振器、電子機器、及び電波時計 | |
CN102206803A (zh) | 图案形成方法、图案形成装置、压电振动器及其制造方法 | |
JP2011172109A (ja) | パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計 | |
CN103312290A (zh) | 压电振动器、振荡器、电子设备以及电波钟表 | |
JP2011119350A (ja) | パッケージの製造方法、圧電振動子、発振器、電子機器及び電波時計 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: JINGGONG ELECTRONIC CRYSTAL TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SEIKO INSTRUMENTS, INC. Effective date: 20131225 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20131225 Address after: Chiba, Chiba, Japan Applicant after: SII CRYSTAL TECHNOLOGY Inc. Address before: Chiba, Chiba, Japan Applicant before: Seiko Instruments Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160331 Address after: Chiba, Chiba, Japan Patentee after: Seiko Instruments Inc. Address before: Chiba, Chiba, Japan Patentee before: SII CRYSTAL TECHNOLOGY Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150624 |