CN101981686B - 用于将选择性的低温钌沉积集成到半导体器件的铜金属化中的方法 - Google Patents

用于将选择性的低温钌沉积集成到半导体器件的铜金属化中的方法 Download PDF

Info

Publication number
CN101981686B
CN101981686B CN200980110629.9A CN200980110629A CN101981686B CN 101981686 B CN101981686 B CN 101981686B CN 200980110629 A CN200980110629 A CN 200980110629A CN 101981686 B CN101981686 B CN 101981686B
Authority
CN
China
Prior art keywords
metal
precursor
metal film
gas
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980110629.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN101981686A (zh
Inventor
铃木健二
定免美保
乔纳森·鲁勒安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101981686A publication Critical patent/CN101981686A/zh
Application granted granted Critical
Publication of CN101981686B publication Critical patent/CN101981686B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200980110629.9A 2008-01-22 2009-01-19 用于将选择性的低温钌沉积集成到半导体器件的铜金属化中的方法 Expired - Fee Related CN101981686B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/018,074 2008-01-22
US12/018,074 US7776740B2 (en) 2008-01-22 2008-01-22 Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
PCT/US2009/031414 WO2009094325A1 (en) 2008-01-22 2009-01-19 Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device

Publications (2)

Publication Number Publication Date
CN101981686A CN101981686A (zh) 2011-02-23
CN101981686B true CN101981686B (zh) 2016-03-02

Family

ID=40548644

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980110629.9A Expired - Fee Related CN101981686B (zh) 2008-01-22 2009-01-19 用于将选择性的低温钌沉积集成到半导体器件的铜金属化中的方法

Country Status (6)

Country Link
US (1) US7776740B2 (https=)
JP (1) JP5550566B2 (https=)
KR (1) KR20100116631A (https=)
CN (1) CN101981686B (https=)
TW (1) TWI564964B (https=)
WO (1) WO2009094325A1 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737528B2 (en) * 2008-06-03 2010-06-15 International Business Machines Corporation Structure and method of forming electrically blown metal fuses for integrated circuits
US8823176B2 (en) 2008-10-08 2014-09-02 International Business Machines Corporation Discontinuous/non-uniform metal cap structure and process for interconnect integration
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) * 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
DE102009010844B4 (de) * 2009-02-27 2018-10-11 Advanced Micro Devices, Inc. Bereitstellen eines verbesserten Elektromigrationsverhaltens und Verringern der Beeinträchtigung empfindlicher dielektrischer Materialien mit kleinem ε in Metallisierungssystemen von Halbleiterbauelementen
US8242019B2 (en) * 2009-03-31 2012-08-14 Tokyo Electron Limited Selective deposition of metal-containing cap layers for semiconductor devices
US8178439B2 (en) * 2010-03-30 2012-05-15 Tokyo Electron Limited Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices
US8232200B1 (en) 2011-03-18 2012-07-31 International Business Machines Corporation Methods of forming integrated circuit devices having damascene interconnects therein with metal diffusion barrier layers and devices formed thereby
CN102214612B (zh) * 2011-05-27 2015-10-07 上海华虹宏力半导体制造有限公司 静态随机存储器的制备方法
WO2013126323A1 (en) * 2012-02-23 2013-08-29 Applied Materials, Inc. Method and apparatus for precursor delivery
JP7066929B2 (ja) * 2015-06-05 2022-05-16 東京エレクトロン株式会社 インターコネクトのためのルテニウムメタルによるフィーチャ充填
JP2017069313A (ja) * 2015-09-29 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
JP6559046B2 (ja) * 2015-11-04 2019-08-14 東京エレクトロン株式会社 パターン形成方法
US9768063B1 (en) * 2016-06-30 2017-09-19 Lam Research Corporation Dual damascene fill
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP7190450B2 (ja) 2017-06-02 2022-12-15 アプライド マテリアルズ インコーポレイテッド 炭化ホウ素ハードマスクのドライストリッピング
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10179941B1 (en) 2017-07-14 2019-01-15 Applied Materials, Inc. Gas delivery system for high pressure processing chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) * 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
TWI790320B (zh) * 2017-12-16 2023-01-21 美商應用材料股份有限公司 釕的選擇性原子層沉積
KR102649241B1 (ko) 2018-01-24 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 고압 어닐링을 사용한 심 힐링
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
WO2020251696A1 (en) 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN119194414B (zh) * 2024-11-06 2025-07-11 南京原磊纳米材料有限公司 一种用于高深宽比结构器件的原子层沉积镀膜方法及系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342733B1 (en) * 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US20060110530A1 (en) * 2004-11-23 2006-05-25 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US20060121733A1 (en) * 2004-10-26 2006-06-08 Kilpela Olli V Selective formation of metal layers in an integrated circuit

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851895A (en) * 1985-05-06 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Metallization for integrated devices
US4929468A (en) * 1988-03-18 1990-05-29 The United States Of America As Represented By The United States Department Of Energy Formation of amorphous metal alloys by chemical vapor deposition
US4938999A (en) * 1988-07-11 1990-07-03 Jenkin William C Process for coating a metal substrate by chemical vapor deposition using a metal carbonyl
US5171610A (en) * 1990-08-28 1992-12-15 The Regents Of The University Of Calif. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films
US5314727A (en) * 1992-07-28 1994-05-24 Minnesota Mining & Mfg. Co./Regents Of The University Of Minnesota Chemical vapor deposition of iron, ruthenium, and osmium
US5359787A (en) 1993-04-16 1994-11-01 Air Products And Chemicals, Inc. High purity bulk chemical delivery system
CA2206217C (en) 1997-05-27 2003-01-07 Miroslav Milinkovic Nickel carbonyl vapour deposition process
US6077780A (en) * 1997-12-03 2000-06-20 Advanced Micro Devices, Inc. Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure
DE69913332T2 (de) * 1998-05-01 2004-05-27 Pfizer Products Inc., Groton Verfahren zur herstellung von enantiomeren reinem oder optisch angereicherter sertraline-tetralon durch kontinuierliche chromatographie
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6063705A (en) * 1998-08-27 2000-05-16 Micron Technology, Inc. Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
US6074945A (en) 1998-08-27 2000-06-13 Micron Technology, Inc. Methods for preparing ruthenium metal films
EP1131475A1 (en) 1998-11-03 2001-09-12 Chemical Vapour Deposition Systems Inc. Nickel carbonyl vapour deposition apparatus and process
US6242349B1 (en) * 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6232230B1 (en) * 1999-01-05 2001-05-15 Advanced Micro Devices, Inc. Semiconductor interconnect interface processing by high temperature deposition
US6319832B1 (en) * 1999-02-19 2001-11-20 Micron Technology, Inc. Methods of making semiconductor devices
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
US7228556B2 (en) * 1999-12-21 2007-06-05 Tivo Inc. Distributed, interactive television program guide; system and method
WO2001088972A1 (en) * 2000-05-15 2001-11-22 Asm Microchemistry Oy Process for producing integrated circuits
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
US6444263B1 (en) * 2000-09-15 2002-09-03 Cvc Products, Inc. Method of chemical-vapor deposition of a material
KR100727372B1 (ko) * 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법
US6420583B1 (en) * 2001-09-27 2002-07-16 Praxair Technology, Inc Methods of synthesizing ruthenium and osmium compounds
US6713373B1 (en) * 2002-02-05 2004-03-30 Novellus Systems, Inc. Method for obtaining adhesion for device manufacture
US7264846B2 (en) * 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
JP3992588B2 (ja) 2002-10-23 2007-10-17 東京エレクトロン株式会社 成膜方法
US7078341B2 (en) 2003-09-30 2006-07-18 Tokyo Electron Limited Method of depositing metal layers from metal-carbonyl precursors
US6989321B2 (en) * 2003-09-30 2006-01-24 Tokyo Electron Limited Low-pressure deposition of metal layers from metal-carbonyl precursors
US7107998B2 (en) * 2003-10-16 2006-09-19 Novellus Systems, Inc. Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus
US20050110142A1 (en) * 2003-11-26 2005-05-26 Lane Michael W. Diffusion barriers formed by low temperature deposition
US7285308B2 (en) * 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US7211509B1 (en) * 2004-06-14 2007-05-01 Novellus Systems, Inc, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
JP2006128288A (ja) 2004-10-27 2006-05-18 Tokyo Electron Ltd 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US7638002B2 (en) * 2004-11-29 2009-12-29 Tokyo Electron Limited Multi-tray film precursor evaporation system and thin film deposition system incorporating same
US20060113675A1 (en) * 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
JP2006179599A (ja) * 2004-12-21 2006-07-06 Toshiba Corp 半導体装置およびその製造方法
US7265048B2 (en) * 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US7288479B2 (en) * 2005-03-31 2007-10-30 Tokyo Electron Limited Method for forming a barrier/seed layer for copper metallization
US7396766B2 (en) * 2005-03-31 2008-07-08 Tokyo Electron Limited Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
US20070059502A1 (en) * 2005-05-05 2007-03-15 Applied Materials, Inc. Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer
US7402519B2 (en) * 2005-06-03 2008-07-22 Intel Corporation Interconnects having sealing structures to enable selective metal capping layers
US7713876B2 (en) * 2005-09-28 2010-05-11 Tokyo Electron Limited Method for integrating a ruthenium layer with bulk copper in copper metallization
US7785658B2 (en) * 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
US20070099422A1 (en) * 2005-10-28 2007-05-03 Kapila Wijekoon Process for electroless copper deposition
US20070117377A1 (en) * 2005-11-23 2007-05-24 Chih-Chao Yang Conductor-dielectric structure and method for fabricating
US7439624B2 (en) * 2006-05-18 2008-10-21 International Business Machines Corporation Enhanced mechanical strength via contacts
US20080081464A1 (en) * 2006-09-29 2008-04-03 Tokyo Electron Limited Method of integrated substrated processing using a hot filament hydrogen radical souce

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342733B1 (en) * 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US20060121733A1 (en) * 2004-10-26 2006-06-08 Kilpela Olli V Selective formation of metal layers in an integrated circuit
US20060110530A1 (en) * 2004-11-23 2006-05-25 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors

Also Published As

Publication number Publication date
KR20100116631A (ko) 2010-11-01
WO2009094325A1 (en) 2009-07-30
CN101981686A (zh) 2011-02-23
JP2011510517A (ja) 2011-03-31
US7776740B2 (en) 2010-08-17
US20090186481A1 (en) 2009-07-23
TWI564964B (zh) 2017-01-01
TW200947558A (en) 2009-11-16
JP5550566B2 (ja) 2014-07-16

Similar Documents

Publication Publication Date Title
CN101981686B (zh) 用于将选择性的低温钌沉积集成到半导体器件的铜金属化中的方法
CN101965635B (zh) 将选择性钌沉积集成到半导体器件的制造中的方法
CN102165573B (zh) 用于形成钌金属覆盖层的方法
US20120252210A1 (en) Method for modifying metal cap layers in semiconductor devices
US8076241B2 (en) Methods for multi-step copper plating on a continuous ruthenium film in recessed features
TWI382496B (zh) 將保形釕層整合至具高縱橫比特徵之銅金屬化結構的方法
JP5683038B2 (ja) 成膜方法
US7473634B2 (en) Method for integrated substrate processing in copper metallization
JP2013507008A5 (https=)
US20080081464A1 (en) Method of integrated substrated processing using a hot filament hydrogen radical souce
US20080078325A1 (en) Processing system containing a hot filament hydrogen radical source for integrated substrate processing

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160302

Termination date: 20220119