CN102214612B - 静态随机存储器的制备方法 - Google Patents
静态随机存储器的制备方法 Download PDFInfo
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- CN102214612B CN102214612B CN201110142176.7A CN201110142176A CN102214612B CN 102214612 B CN102214612 B CN 102214612B CN 201110142176 A CN201110142176 A CN 201110142176A CN 102214612 B CN102214612 B CN 102214612B
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- 230000003068 static effect Effects 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000004020 conductor Substances 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 238000003860 storage Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 239000010936 titanium Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110142176.7A CN102214612B (zh) | 2011-05-27 | 2011-05-27 | 静态随机存储器的制备方法 |
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CN201110142176.7A CN102214612B (zh) | 2011-05-27 | 2011-05-27 | 静态随机存储器的制备方法 |
Publications (2)
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CN102214612A CN102214612A (zh) | 2011-10-12 |
CN102214612B true CN102214612B (zh) | 2015-10-07 |
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CN201110142176.7A Active CN102214612B (zh) | 2011-05-27 | 2011-05-27 | 静态随机存储器的制备方法 |
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CN (1) | CN102214612B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103077880B (zh) * | 2012-07-25 | 2015-09-30 | 上海华力微电子有限公司 | 一种处理铝焊垫上的氮化钛残留物的工艺方法 |
CN104425709B (zh) * | 2013-08-20 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器的形成方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1453871A (zh) * | 2002-04-26 | 2003-11-05 | 株式会社东芝 | 存储器与逻辑电路混合形成于一芯片的半导体器件及其制法 |
CN1674251A (zh) * | 2004-01-12 | 2005-09-28 | 三星电子株式会社 | 半导体器件的制造方法及由此制造的半导体器件 |
CN102011106A (zh) * | 2010-09-07 | 2011-04-13 | 天津理工大学 | 一种采用复合工艺进行金刚石薄膜平坦化的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001196372A (ja) * | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置 |
JP4741965B2 (ja) * | 2006-03-23 | 2011-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7776740B2 (en) * | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
CN102024746A (zh) * | 2009-09-09 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 用于铜互连布线制造工艺的方法 |
CN102024783B (zh) * | 2009-09-22 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | 用于互连工艺中的半导体器件及其制造方法 |
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2011
- 2011-05-27 CN CN201110142176.7A patent/CN102214612B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1453871A (zh) * | 2002-04-26 | 2003-11-05 | 株式会社东芝 | 存储器与逻辑电路混合形成于一芯片的半导体器件及其制法 |
CN1674251A (zh) * | 2004-01-12 | 2005-09-28 | 三星电子株式会社 | 半导体器件的制造方法及由此制造的半导体器件 |
CN102011106A (zh) * | 2010-09-07 | 2011-04-13 | 天津理工大学 | 一种采用复合工艺进行金刚石薄膜平坦化的方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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