CN101958318B - 显示面板和包括该显示面板的显示装置 - Google Patents
显示面板和包括该显示面板的显示装置 Download PDFInfo
- Publication number
- CN101958318B CN101958318B CN201010226104.6A CN201010226104A CN101958318B CN 101958318 B CN101958318 B CN 101958318B CN 201010226104 A CN201010226104 A CN 201010226104A CN 101958318 B CN101958318 B CN 101958318B
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- CN
- China
- Prior art keywords
- electrode
- transistor
- line
- gate
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 100
- 239000003990 capacitor Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 abstract description 27
- 239000004065 semiconductor Substances 0.000 description 34
- 238000009413 insulation Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 15
- 238000002161 passivation Methods 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 12
- 238000009877 rendering Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000007 visual effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 231100000870 cognitive problem Toxicity 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20090064177 | 2009-07-14 | ||
KR10-2009-0064177 | 2009-07-14 | ||
KR1020100052876A KR101739574B1 (ko) | 2009-07-14 | 2010-06-04 | 표시 패널 및 이를 포함하는 액정 표시 장치 |
KR10-2010-0052876 | 2010-06-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101958318A CN101958318A (zh) | 2011-01-26 |
CN101958318B true CN101958318B (zh) | 2016-01-13 |
Family
ID=43465040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010226104.6A Active CN101958318B (zh) | 2009-07-14 | 2010-07-14 | 显示面板和包括该显示面板的显示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8373814B2 (zh) |
CN (1) | CN101958318B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101728821B1 (ko) * | 2010-09-28 | 2017-05-04 | 삼성디스플레이 주식회사 | 3차원 표시 장치 |
CN102253549B (zh) * | 2011-06-08 | 2013-09-18 | 深圳市华星光电技术有限公司 | 薄膜晶体管矩阵及液晶显示面板 |
CN102402026B (zh) * | 2011-08-31 | 2014-07-16 | 深圳市华星光电技术有限公司 | 液晶显示器 |
CN102608815A (zh) * | 2012-03-22 | 2012-07-25 | 深圳市华星光电技术有限公司 | 液晶显示面板以及其制造方法 |
KR20140039751A (ko) * | 2012-09-25 | 2014-04-02 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
US9965063B2 (en) * | 2013-02-20 | 2018-05-08 | Apple Inc. | Display circuitry with reduced pixel parasitic capacitor coupling |
KR102226900B1 (ko) | 2014-10-14 | 2021-03-11 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR102542186B1 (ko) * | 2016-04-04 | 2023-06-13 | 삼성디스플레이 주식회사 | 표시 장치 |
CN106886111A (zh) * | 2017-03-31 | 2017-06-23 | 厦门天马微电子有限公司 | 一种阵列基板、显示面板及显示装置 |
KR102367963B1 (ko) * | 2017-07-13 | 2022-02-25 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR102681597B1 (ko) * | 2019-05-15 | 2024-07-04 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR20220011246A (ko) * | 2020-07-20 | 2022-01-28 | 삼성디스플레이 주식회사 | 표시 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004341186A (ja) * | 2003-05-15 | 2004-12-02 | Casio Comput Co Ltd | 薄膜トランジスタパネルおよびその製造方法 |
CN101452941A (zh) * | 2007-12-04 | 2009-06-10 | 三星电子株式会社 | 薄膜晶体管基板、具有其的液晶显示器及其制造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04104639A (ja) | 1990-08-24 | 1992-04-07 | Mitsubishi Electric Corp | 障害情報収集方式 |
JP2001222024A (ja) * | 2000-02-08 | 2001-08-17 | Matsushita Electric Ind Co Ltd | 液晶表示装置とその駆動方法 |
GB2372620A (en) * | 2001-02-27 | 2002-08-28 | Sharp Kk | Active Matrix Device |
JP2004279904A (ja) * | 2003-03-18 | 2004-10-07 | Fujitsu Display Technologies Corp | 液晶表示装置及びその製造方法 |
KR20040105934A (ko) | 2003-06-10 | 2004-12-17 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 및 그에 사용되는 표시판 |
KR101122226B1 (ko) | 2003-08-14 | 2012-03-21 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 및 그에 사용되는 표시판 |
JP4104639B2 (ja) * | 2004-12-28 | 2008-06-18 | シャープ株式会社 | 液晶表示装置およびその駆動方法 |
KR101171187B1 (ko) * | 2005-11-07 | 2012-08-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판, 그 제조 방법 및 이를 포함하는액정 표시 장치 |
KR20080069733A (ko) * | 2007-01-24 | 2008-07-29 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
TWI364609B (en) * | 2007-02-16 | 2012-05-21 | Chimei Innolux Corp | Liquid crystal display panel and manufacturing method thereof |
KR101348754B1 (ko) * | 2007-05-03 | 2014-01-07 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP5116359B2 (ja) * | 2007-05-17 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR101358334B1 (ko) * | 2007-07-24 | 2014-02-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 구동 방법 |
TW200905651A (en) * | 2007-07-26 | 2009-02-01 | Au Optronics Corp | Liquid crystal display with wide view angle |
KR20090126764A (ko) * | 2008-06-05 | 2009-12-09 | 삼성전자주식회사 | 표시기판, 이의 제조방법 및 이를 갖는 표시장치 |
KR101481690B1 (ko) * | 2008-07-23 | 2015-01-12 | 삼성디스플레이 주식회사 | 표시기판, 이의 제조방법 및 이를 갖는 표시장치 |
KR101582947B1 (ko) * | 2008-09-17 | 2016-01-08 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
-
2010
- 2010-07-09 US US12/833,695 patent/US8373814B2/en active Active
- 2010-07-14 CN CN201010226104.6A patent/CN101958318B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004341186A (ja) * | 2003-05-15 | 2004-12-02 | Casio Comput Co Ltd | 薄膜トランジスタパネルおよびその製造方法 |
CN101452941A (zh) * | 2007-12-04 | 2009-06-10 | 三星电子株式会社 | 薄膜晶体管基板、具有其的液晶显示器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110013105A1 (en) | 2011-01-20 |
US8373814B2 (en) | 2013-02-12 |
CN101958318A (zh) | 2011-01-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD. Effective date: 20121219 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121219 Address after: South Korea Gyeonggi Do Yongin Applicant after: SAMSUNG DISPLAY Co.,Ltd. Address before: Gyeonggi Do Korea Suwon Applicant before: Samsung Electronics Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220826 Address after: 9-2, Guangdong Province, Shenzhen Guangming Tang Ming Road Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: South Korea Gyeonggi Do Yongin Patentee before: SAMSUNG DISPLAY Co.,Ltd. |
|
TR01 | Transfer of patent right |